咨询与建议

限定检索结果

文献类型

  • 127 篇 会议
  • 66 篇 期刊文献

馆藏范围

  • 193 篇 电子文献
  • 0 种 纸本馆藏

日期分布

学科分类号

  • 136 篇 工学
    • 120 篇 电子科学与技术(可...
    • 79 篇 材料科学与工程(可...
    • 46 篇 化学工程与技术
    • 33 篇 电气工程
    • 20 篇 信息与通信工程
    • 13 篇 计算机科学与技术...
    • 12 篇 光学工程
    • 9 篇 冶金工程
    • 8 篇 仪器科学与技术
    • 8 篇 动力工程及工程热...
    • 6 篇 软件工程
    • 3 篇 网络空间安全
    • 2 篇 机械工程
    • 2 篇 轻工技术与工程
    • 1 篇 控制科学与工程
    • 1 篇 生物医学工程(可授...
    • 1 篇 生物工程
  • 65 篇 理学
    • 46 篇 化学
    • 38 篇 物理学
    • 6 篇 数学
    • 4 篇 地质学
    • 1 篇 生物学
    • 1 篇 统计学(可授理学、...
  • 1 篇 管理学
    • 1 篇 管理科学与工程(可...

主题

  • 23 篇 gallium nitride
  • 13 篇 hemts
  • 11 篇 silicon carbide
  • 10 篇 indium phosphide
  • 8 篇 modfets
  • 7 篇 inp
  • 7 篇 silicon
  • 6 篇 power amplifiers
  • 6 篇 logic gates
  • 6 篇 performance eval...
  • 6 篇 heterojunction b...
  • 5 篇 scattering param...
  • 5 篇 integrated circu...
  • 5 篇 aluminum gallium...
  • 4 篇 iii-v semiconduc...
  • 4 篇 simulation
  • 4 篇 schottky barrier...
  • 4 篇 substrates
  • 4 篇 optical receiver...
  • 4 篇 efficiency

机构

  • 78 篇 science and tech...
  • 45 篇 science and tech...
  • 28 篇 nanjing electron...
  • 11 篇 nanjing guobo el...
  • 9 篇 state key labora...
  • 9 篇 college of integ...
  • 6 篇 science and tech...
  • 6 篇 science and tech...
  • 6 篇 national key lab...
  • 5 篇 fundamental scie...
  • 5 篇 nanjing electron...
  • 5 篇 department of mi...
  • 4 篇 fundamental scie...
  • 4 篇 national and loc...
  • 4 篇 science and tech...
  • 4 篇 school of optoel...
  • 4 篇 state key labora...
  • 4 篇 school of electr...
  • 3 篇 national asic sy...
  • 3 篇 center of materi...

作者

  • 29 篇 tangsheng chen
  • 23 篇 wei cheng
  • 19 篇 yuechan kong
  • 17 篇 haiyan lu
  • 15 篇 jianjun zhou
  • 13 篇 chen chen
  • 13 篇 chen tangsheng
  • 11 篇 bin niu
  • 10 篇 chen gang
  • 10 篇 bai song
  • 10 篇 zhou jianjun
  • 8 篇 zhonghui li
  • 8 篇 kai zhang
  • 8 篇 cheng wei
  • 8 篇 ruimin xu
  • 8 篇 yi zhang
  • 8 篇 yuan wang
  • 7 篇 li liang
  • 7 篇 li yun
  • 7 篇 oupeng li

语言

  • 179 篇 英文
  • 11 篇 中文
  • 3 篇 其他
检索条件"机构=Science and Technology of Monolithic Integrated and Modules Circuits Key Laboratory"
193 条 记 录,以下是81-90 订阅
排序:
High-performance enhancement-mode AlGaN/GaN MOS-HEMTs with fluorinated stack gate dielectrics and thin barrier layer
收藏 引用
Journal of Semiconductors 2016年 第6期37卷 112-115页
作者: 高涛 徐锐敏 张凯 孔月婵 周建军 孔岑 郁鑫鑫 董迅 陈堂胜 Fundamental Science on EHF Laboratory University of Electronic Science and Technology of China (UESTC) Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute
We present high-performance enhancement-mode AlGaN/GaN metal-oxide-semiconductor highelectron mobility transistors(MOS-HEMTs) by a fluorinated gate dielectric technique.A nanolaminate of an Al_2O_3/La_xAl_(1-x)O_3... 详细信息
来源: 评论
An artificial neural network based nonlinear behavioral model for RF power transistors
An artificial neural network based nonlinear behavioral mode...
收藏 引用
Asia-Pacific Conference on Microwave
作者: Jialin Cai Jie Wang Chao Yu Haiyan Lu Jun Liu Lingling Sun Ministry of Education Hangzhou Dianzi University Hangzhou China State Key Laboratory of Millimeter Waves Southeast University Nanjing China The Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China
In this paper, a frequency domain, nonlinear, behavioral model for RF power transistors, based on an artificial neural network (ANN), is proposed and validated. The model is identified using the back-propagation algor... 详细信息
来源: 评论
High performance ultra-thin quaternary InAlGaN barrier HEMTs with fT > 260 GHz
High performance ultra-thin quaternary InAlGaN barrier HEMTs...
收藏 引用
2016 International Forum on Wide Bandgap Semiconductors China, IFWS 2016
作者: Zhu, Guangrun Zhang, Kai Yu, Xinxin Kong, Yuechan Chen, Tangsheng Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute No.524 Zhongshan East Road Nanjing China
We fabricated the depletion-mode high-electron mobility transistors (HEMTs) based on a quaternary barrier InAlGaN/AlN/GaN heterostructure on SiC substrate. A 60-nm rectangular-shape gate was defined through e-beam lit... 详细信息
来源: 评论
Structure and Strain Properties of GaN Films Grown on Si(111) Substrates with AlxGa1-xN/AlyGa1-yN Superlattices
收藏 引用
Chinese Physics Letters 2015年 第5期32卷 153-156页
作者: 潘磊 倪金玉 郁鑫鑫 董逊 彭大青 李传皓 李忠辉 陈堂胜 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute
CaN films with an AlxGa1-xN/AlyGa1-xN superlattice (SL) buffer layer are grown on Si(111) substrates by metal-organic chemical vapor deposition (MOCVD). The structure and strain properties of the samples are stu... 详细信息
来源: 评论
Growth of compressively-strained GaN films on Si(111) substrates with thick AlGaN transition and AlGaN superlattice buffer layers
收藏 引用
Physica Status Solidi (C) Current Topics in Solid State Physics 2016年 第5-6期13卷 181-185页
作者: Pan, Lei Dong, Xun Ni, Jinyu Li, Zhonghui Yang, Qiankun Peng, Daqing Li, Chuanhao Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China
In this paper, crack-free GaN films with step-graded AlGaN transition layer and AlGaN superlattice layer as buffer layers were grown on Si(111) substrate by metal-organic chemical vapor deposition(MOCVD). The combinat... 详细信息
来源: 评论
Theoretical and Experimental Optimization of InGaAs Channels in GaAs PHEMT Structure
收藏 引用
Chinese Physics Letters 2015年 第6期32卷 173-175页
作者: 高汉超 尹志军 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute
The ground-state energy level (GEL) and electron distribution of GaAs pseudomorphic high-electron-mobility transistors (PHEMTs) are analyzed by a self-consistent solution to the Schrodinger-Poisson equations. The ... 详细信息
来源: 评论
Enhancement-mode Al2O3/InAlGaN/GaN MOS-HEMTs with a record drain current density of 1.7 A/mm and a threshold voltage of +1.5 V
Enhancement-mode Al2O3/InAlGaN/GaN MOS-HEMTs with a record d...
收藏 引用
China International Forum o Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)
作者: Kai Zhang Jianjun Zhou Cen Kong Yuechan Kong Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing
The paper reports high performance enhancement-mode MOS-HEMT based on quaternary InAlGaN barrier. A self-aligned gate technology is used for gate recessing, dielectric deposition and gate electrode formation processes... 详细信息
来源: 评论
Thin-barrier enhancement-mode AlGaN/GaN MIS-HEMT using ALD Al_2O_3 as gate insulator
收藏 引用
Journal of Semiconductors 2015年 第9期36卷 62-65页
作者: 王哲力 周建军 孔月婵 孔岑 董逊 杨洋 陈堂胜 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute
A high-performance enhancement-mode (E-mode) gallium nitride (GaN)-based metal-insulator- semiconductor high electron mobility transistor (MIS-HEMT) that employs a 5-nm-thick aluminum gallium nitride (Al0.3Ga0... 详细信息
来源: 评论
High power performance AlGaN/GaN HEMT with 0.1 μm Y-shaped gate encapsulated with low-κ BCB
High power performance AlGaN/GaN HEMT with 0.1 μm Y-shaped ...
收藏 引用
IEEE Conference on Electron Devices and Solid-State circuits
作者: Xinxin Yu Jianjun Zhou Yuechan Kong Daqing Peng Weibo Wang Fangjin Guo Haiyan Lu Wen Wang Cen Kong Zhonghui Li Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China
High power performance AlGaN/GaN HEMT devices with 0.1 μm Y-shaped gates encapsulated with low-κ BCB are reported. The maximum drain current and transconductance of the device are 1.15 A/mm and 350 mS/mm, respective... 详细信息
来源: 评论
High performance ultra-thin quaternary InAlGaN barrier HEMTs with fT > 260 GHz
High performance ultra-thin quaternary InAlGaN barrier HEMTs...
收藏 引用
China International Forum o Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)
作者: Guangrun Zhu Kai Zhang Xinxin Yu Yuechan Kong Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing P. R. China
We fabricated the depletion-mode high-electron mobility transistors (HEMTs) based on a quaternary barrier InAlGaN/AlN/GaN heterostructure on SiC substrate. A 60-nm rectangular-shape gate was defined through e-beam lit... 详细信息
来源: 评论