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2010 International Conference on Microwave and Millimeter Wave technology, ICMMT 2010

作者： Kong, Yuechan Zhou, Jianjun Xue, Fangshi Li, Liang Chen, Chen Luo, Wenbo Zeng, Huizhong Zhu, Jun National Key Laboratory of Science and Technology on Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute Nanjing 210016 China State Key Lab. of Electronic Thin Films and Integrated Devices University of Electronics Science and Technology of China Chengdu 610054 China

ISBN: (纸本)9781424457052

The influence of ferroelectric polarization on the electrical properties of PZT/AlGaN/GaN metal-ferroelectric-semiconductor (MFS) structure is investigated by capacitance-voltage (C-V) measurements. A distinct unsymmetrical shift of the C-V profile is observed that when swept positively, the C-V curve shifts to the right with increasing the negative starting voltage, while hardly move with different starting positive voltage when swept in the opposite direction. To understand this, a pinning effect model is developed and incorporated into self-consistent calculation, with taking history-dependent electric field effect into account. Owing to the strong polarization of underlying AlGaN layer, the switchable polarization of ferroelectric is initially pinned at -1.55 μC/cm2 and does not change after positive bias operation. When increasing the negative sweeping voltage, the partially switched ferroelectric dipoles are increased, which results in the right-shift of the C-V curves, in agreement with the experiment. © 2010 IEEE.

关键词： Aluminum gallium nitride

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InGaAs/InP double heterojunction bipolar transistors with fmax=532GHz

InGaAs/InP double heterojunction bipolar transistors with fm...

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IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IEEE MTT-S IMWS-AMP 2015

作者： Wei, Cheng Yuan, Wang Bin, Niu Zi-Li, Xie Jun-Ling, Xie Hai-Yan, Lu Yan, Zhao Yan, Sun Tang-Sheng, Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China Key Laboratory of Advanced Photonic and Electronic Materials Department of Physics Nanjing University Nanjing210093 China

ISBN: (纸本)9781479964505

An InGaAs/InP DHBT with InGaAsP composite collector is designed and fabricated using triple mesa structure and planarization technology. All processes are on 3-inch wafers. The DHBT with emitter area of 0.5×5μm2 exhibits a current cutoff frequency ft=350GHz and a maximum oscillation frequency fmax=532GHz which is to our knowledge the highest BVCEO ever reported for InGaAs/InP DHBTs in China. The breakdown voltage is 4.8V. The high speed InGaAs/InP DHBTs with high breakdown voltage are promising for voltage controlled oscillator (VCO) and mixer applications at THz span. © 2015 IEEE.

关键词： Indium phosphide

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An Aging Small-signal Modeling Method of Microwave Transistors Using GA-ELM Neural Network

An Aging Small-signal Modeling Method of Microwave Transisto...

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2023 International Symposium of Electronics Design Automation, ISEDA 2023

作者： Cheng, Lin Lu, Hongliang Guo, Xiuxiu Yan, Silu Cheng, Wei Zhang, Yuming School of Microelectronics Xidian University Xi'an710071 China Nanjing Electronic Devices Institute Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing210016 China

ISBN: (纸本)9798350304510

In this paper, an aging small-signal S-parameters modeling method for microwave transistors is explored using a genetic algorithm (GA) to optimize the Extreme Learning Machine (ELM) neural network. A dual GA-ELM neural network architecture was used to simulate the fresh S-parameters of InP heterojunction bipolar transistor (HBT) devices and the degradation of S-parameters after accelerated aging, respectively. Good agreement was achieved between measured and predicted results of the fresh and aging S-parameters within a frequency range of 0.1 to 40 GHz. © 2023 IEEE.

关键词： Scattering parameters

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Common base four-finger InGaAs/InP DHBT with 535 GHz fmax

Common base four-finger InGaAs/InP DHBT with 535 GHz fmax

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IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IEEE MTT-S IMWS-AMP 2015

作者： Bin, Niu Wei, Cheng Yuan, Wang Zi-Li, Xie Jun-Ling, Xie Hai-Yan, Lu Yan, Sun Tang-Sheng, Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China Key Laboratory of Advanced Photonic and Electronic Materials Department of Physics Nanjing University Nanjing210093 China

ISBN: (纸本)9781479964505

A common base four-finger InGaAs/InP DHBT with 535 GHz fmax using 0.5μm emitter technology is fabricated. Multi-finger design was used to increase input current. Common base configuration was compared with common emitter configuration, and demonstrated a smaller K factor at high frequency span, indicating a larger MSG/MAG breakpoint frequency and thus a higher gain when frequency reaches MAG region of common emitter devices. © 2015 IEEE.

关键词： Indium phosphide

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Novel extraction method for small-signal equivalent circuit model of HEMTs based on vector fitting

Novel extraction method for small-signal equivalent circuit ...

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2014 IEEE International Conference on Communication Problem-Solving, ICCP 2014

作者： Wu, Yongzhi Ren, Kun Liu, Jun Wei, Cheng Haiyan, Lu Key Laboratory for RF Circuits and Systems of Ministry of Education Hangzhou Dianzi University Hangzhou310037 China Science and Technology on Monolithic Integrated Circuit and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China

ISBN: (纸本)9781479942466

A novel model method for III-V HEMTs small-signal model parameter extraction is presented in this work. All the model elements are directly derived from hot S-parameters, rather than cold S-parameters, by using vector fitting (VF) method The model renders excellent agreement with the measured and simulated data over 1 to 100 GHz, for a 2×150μm GaAs HEMT device manufactured in CETC-55 150nm GaAs pHEMT technology. © 2014 IEEE.

关键词： III-V semiconductors

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Bright photon-pair source based on a silicon dual-Mach-Zehnder microring

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science China(Physics,Mechanics & Astronomy) 2020年第2期63卷 3-6页

作者： Chao Wu YingWen Liu XiaoWen Gu XinXin Yu YueChan Kong Yang Wang XiaoGang Qiang JunJie Wu ZhiHong Zhu XueJun Yang Ping Xu Institute for Quantum Information and State Key Laboratory of High Performance Computing College of ComputerCollege of Advanced Interdisciplinary StudiesNational University of Defense TechnologyChangsha 410073China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices InstituteNanjing 210016China National Laboratory of Solid State Microstructures and School of Physics Nanjing UniversityNanjing 210093China

Single photons and photon pairs are typically generated by spontaneous parametric down conversion or quantum dots;however,spontaneous four-wave mixing(SFWM)in silicon microring resonators[1]is also an appealing source of entangled photons,offering a strong cavity-enhanced nonlinear interactions while maintaining features,such as compact,simple to fabricate,and allowing for thermal ***,silicon ring-resonators usually suffer from a trade-off between providing a high pair generation rate(PGR)and high extraction *** achieve high PGR,devices are generally operated with the signal and idler photons in the undercoupling regime and pump photons at the critical coupling point,while high extraction rates require the converted photons to be ***,the optimal conditions for achieving maximal output photon pair flux are critical coupling for the pump photons and overcoupling for the converted photons[2,3].

关键词： coupling photon converted

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0.15 μm GaN MMIC PA Based on Advanced i-line Lithography Process 17

0.15 μm GaN MMIC PA Based on Advanced i-line Lithography Pr...

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17th China International Forum on Solid State Lighting and 2020 International Forum on Wide Bandgap Semiconductors China, SSLChina: IFWS 2020

作者： Huang, Wei Wang, Suyuan Liu, Zhu Zhang, Junyun Huang, Nianning Wang, Xinqiang Chen, Tangsheng Nanjing Electronic Devices Institute Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing210016 China Peking University State Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of Physics Beijing100871 China

ISBN: (纸本)9780738111889

The resolution enhancement lithography assisted by chemical shrink (RELACS) is presented to increase the resolution of the i-line lithography. We have succeeded in developing an advanced i-line lithography process based on i-line stepper lithography and second-RELACS process. Moreover, the limit resolution of i-line lithography can be increased from 0.35 μm to 0.1 μm at the first time, and the wafer yield of GaN high electron mobility transistor (HEMT) with 3.1 mm gate width which has an Lg = 0.147 μm is 87.4 %. Besides, the second-RELACS process is applied to X-band GaN monolithic microwave integrated circuit power amplifier (MMIC PA), the resist width and gate length are about 0.15 μm and 0.2 μm. It is confirmed that the wafer yield of T gate with 6.8 mm gate width can be as high as 70.2 %. Comparing with the results of deep ultra-violet (DUV) lithography, the electrical and radio frequency (RF) characteristics of the GaN HEMTs fabricated with the second-RELACS process are stable. © 2020 IEEE.

关键词： Gallium nitride

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CL-TWE Mach–Zehnder electro-optic modulator based on InP-MQW optical waveguides

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Chinese Optics Letters 2019年第6期17卷 36-40页

作者： Guang Qian Bin Niu Wu Zhao Qiang Kan Xiaowen Gu Fengjie Zhou Yuechan Kong Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices InstituteNanjing 210016China Key Laboratory of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China

In this Letter,we reported the preliminary results of an integrating periodically capacitive-loaded traveling wave electrode(CL-TWE)Mach–Zehnder modulator(MZM)based on InP-based multiple quantum well(MQW)optical *** device configuration mainly includes an optical Mach–Zehnder interferometer,a direct current electrode,two phase electrodes,and a CL-TWE consisting of a U electrode and an I *** modulator was fabricated on a 3 *** epitaxial wafer by standard photolithography,inductively coupled plasma dry etching,wet etching,electroplating,*** results show that the MZM exhibits a3 dB electro-optic bandwidth of about 31 GHz,a Vπof 3 V,and an extinction ratio of about 20 dB.

关键词： optical Mach multiple plasma wave was dB

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Efficient immersion cooling for electronic devices based on multi-physics field coupling

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International Journal of Thermal sciences 2025年 215卷

作者： Fan, Chengcheng Yang, Ruixue Guo, Huaixin Jiang, Haitao Zhang, Chengbin Chen, Yongping Key Laboratory of Efficient Low-carbon Energy Conversion and Utilization of Jiangsu Provincial Higher Education Institutions Suzhou University of Science and Technology Jiangsu Suzhou215009 China School of Energy and Environment Southeast University Jiangsu Nanjing210096 China Advanced Ocean Institute of Southeast University Jiangsu Nantong226019 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Jiangsu Nanjing210096 China China Electronics Technology Group Corporation 38th Research Institute Anhui Hefei230031 China

Efficient cooling of high heat-flux electronic devices involving multi-physics field coupling has become a key challenge. To address these challenges, this paper establishes a multi-physics field coupling heat-transfer model for electronic devices using immersion cooling and serpentine channel cooling. The multi-physics field coupling analysis of electronic devices with different cooling methods is carried out, focusing on the influences of input voltage, inlet coolant mass flow rate, and coolant type. The results indicate that multi-physics field coupling effects in electronic devices lead to a temperature increase of 1.8 %∼17.8 %, a rise in current density of 235 %∼245 %, and a maximum displacement increase of 0.12 μm. Moreover, the temperature, output current, and strain energy density of electronic devices increase with higher input voltage but decrease with higher inlet mass flow rate. Coolant type significantly influences the thermal and mechanical performance of electronic devices but has relatively minor effect on their electrical characteristics. Compared to serpentine channel cooling, immersion cooling reduces discrepancies in temperature, current density, and strain energy density by 23.4 %, 10.8 %, and 70 %, respectively, with and without multi-physics field coupling, effectively mitigating the multi-physics field coupling effect. Under multi-physics field coupling conditions, the thermal management advantages of immersion cooling become increasingly apparent compared to serpentine channel cooling with increasing electric potential, while differences in electrical performance remain minimal. © 2025

关键词： Electronic cooling

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Blind Calibration Algorithm for Time-interleaved Analog-to-Digital Conversion System 15

Blind Calibration Algorithm for Time-interleaved Analog-to-D...

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15th International Conference on Microwave and Millimeter Wave technology, ICMMT 2023

作者： Jiang, Ziqian Xu, Jie Li, Xiaopeng Zhang, Youtao Zhang, Changchun Guo, Yufeng Zhang, Yi College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China Nanjing GuoBo Electronics Co. Ltd Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China State Key Laboratory of Millimeter Waves Nanjing China

ISBN: (纸本)9798350338874

This paper presents a blind calibration algorithm for a multi-channel time-interleaved analog-to-digital conversion system implemented in MATLAB/simulink. The behavior level simulation of the calibration system is carried out. The simulation results show that the signal-to-noise ratio (SNR), signal-to-noise-distortion ratio(SNDR), and spurious-free dynamic range (SFDR) of the signal corrected by the calibration system are greatly improved, which lays a solid foundation for the subsequent digital circuit design. Behavioral simulations are presented for a 4-channel 10-bit TI-ADC in order to verify the effectiveness of the proposed method. Using the introduced calibration technique, SFDR increased by 33 dB on average. © 2023 IEEE.

关键词： Analog to digital conversion

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