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High-performance enhancement-mode AlGaN/GaN MOS-HEMTs with fluorinated stack gate dielectrics and thin barrier layer

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Journal of Semiconductors 2016年第6期37卷 112-115页

作者：高涛徐锐敏张凯孔月婵周建军孔岑郁鑫鑫董迅陈堂胜 Fundamental Science on EHF Laboratory University of Electronic Science and Technology of China (UESTC) Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

We present high-performance enhancement-mode AlGaN/GaN metal-oxide-semiconductor highelectron mobility transistors（MOS-HEMTs） by a fluorinated gate dielectric technique.A nanolaminate of an Al_2O_3/La_xAl_（1-x）O_3/Al_2O_3 stack（x≈0.33） grown by atomic layer deposition is employed to avoid fluorine ions implantation into the scaled barrier *** enhancement-mode MOS-HEMTs exhibit an excellent performance as compared to those with the conventional dielectric-last technique,delivering a large maximum drain current of 916 mA/mm and simultaneously a high peak transconductance of 342 mS/*** balanced DC characteristics indicate that advanced gate stack dielectrics combined with buffered fluorine ions implantation have a great potential for high speed GaN E/D-mode integrated circuit applications.

关键词： AlGaN/GaN enhancement-mode（E-mode） stack gate dielectrics atomic layer deposition（ALD）

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An artificial neural network based nonlinear behavioral model for RF power transistors

An artificial neural network based nonlinear behavioral mode...

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Asia-Pacific Conference on Microwave

作者： Jialin Cai Jie Wang Chao Yu Haiyan Lu Jun Liu Lingling Sun Ministry of Education Hangzhou Dianzi University Hangzhou China State Key Laboratory of Millimeter Waves Southeast University Nanjing China The Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China

In this paper, a frequency domain, nonlinear, behavioral model for RF power transistors, based on an artificial neural network (ANN), is proposed and validated. The model is identified using the back-propagation algorithm from the incident and scattered wave data of the RF transistor. The model has been extracted and validated on Cree GaN HEMT device. Both simulation and measurement examples are presented. Compared with existing nonlinear transistor behavioral models, which are all input-power dependent, the new model is able to effectively predict the behavior of a transistor over the entire Smith chart, at different levels of input power with only a single set of model coefficients.

关键词： Radio frequency integrated circuit modeling Microwave amplifiers Microwave communication Microwave FETs

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High performance ultra-thin quaternary InAlGaN barrier HEMTs with fT > 260 GHz

High performance ultra-thin quaternary InAlGaN barrier HEMTs...

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2016 International Forum on Wide Bandgap Semiconductors China, IFWS 2016

作者： Zhu, Guangrun Zhang, Kai Yu, Xinxin Kong, Yuechan Chen, Tangsheng Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute No.524 Zhongshan East Road Nanjing China

ISBN: (纸本)9781509046133

We fabricated the depletion-mode high-electron mobility transistors (HEMTs) based on a quaternary barrier InAlGaN/AlN/GaN heterostructure on SiC substrate. A 60-nm rectangular-shape gate was defined through e-beam lithography and subsequent Ni/Au (20 nm/80 nm) metal evaporation. Our device shows a high DC drain current density of 2.5 A/mm, a low on-resistance Ron of 0.94 Ω•mm in the linear region, a high peak extrinsic transconductance of 0.97 S/mm, and a high current-gain cutoff frequency of 261 GHz. Besides, a high fT • Lg product of 15.7 GHz•μm was achieved. The drain-induced barrier lowering (DIBL) is calculated to be 200 mV/V at ID=1 mA/mm, implying moderate short-channel effect in our device. To our knowledge, this is among the best fT performance for GaN-based HEMTs with a gate length of around 60 nm. © 2016 IEEE.

关键词： High electron mobility transistors

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Structure and Strain Properties of GaN Films Grown on Si（111） Substrates with AlxGa1-xN/AlyGa1-yN Superlattices

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Chinese Physics Letters 2015年第5期32卷 153-156页

作者：潘磊倪金玉郁鑫鑫董逊彭大青李传皓李忠辉陈堂胜 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

CaN films with an AlxGa1-xN/AlyGa1-xN superlattice （SL） buffer layer are grown on Si（111） substrates by metal-organic chemical vapor deposition （MOCVD）. The structure and strain properties of the samples are studied by optical microscopy, Raman spectroscopy, x-ray diffractometry and atomic force microscopy. The results show that the strain status and crystalline quality of the CaN layers are strongly dependent on the difference of the Al composition between AlxCa1-xN barriers and AlyCa1-yN wells in the SLs. With a large Al composition difference, the CaN film tends to generate cracks on the surface due to the severe relaxation of the SLs. Otherwise, when using a small Al composition difference, the crystalline quality of the CaN layer degrades due to the poor function of the SLs in filtering dislocations. Under an optimized condition that the Al composition difference equals 0.1, the crack-free and compressive strained CaN film with an improved crystalline quality is achieved. Therefore, the AlxGa1-xN/AlyGal-yN SL buffer layer is a promising buffer structure for growing thick CaN films on Si substrates without crack generation.

关键词： GaN x)N/Al_yGa y)N Superlattices Substrates with Al_xGa Structure and Strain Properties of GaN Films Grown on Si

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Growth of compressively-strained GaN films on Si(111) substrates with thick AlGaN transition and AlGaN superlattice buffer layers

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Physica Status Solidi (C) Current Topics in Solid State Physics 2016年第5-6期13卷 181-185页

作者： Pan, Lei Dong, Xun Ni, Jinyu Li, Zhonghui Yang, Qiankun Peng, Daqing Li, Chuanhao Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China

In this paper, crack-free GaN films with step-graded AlGaN transition layer and AlGaN superlattice layer as buffer layers were grown on Si(111) substrate by metal-organic chemical vapor deposition(MOCVD). The combination of both buffers effectively improves the properties of GaN layer. With the optimization of the buffer structures, high quality compressively-strained GaN layers with thickness up to 3.6 μm have been obtained on Si(111) substrates. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

关键词： Substrates

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Theoretical and Experimental Optimization of InGaAs Channels in GaAs PHEMT Structure

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Chinese Physics Letters 2015年第6期32卷 173-175页

作者：高汉超尹志军 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

The ground-state energy level （GEL） and electron distribution of GaAs pseudomorphic high-electron-mobility transistors （PHEMTs） are analyzed by a self-consistent solution to the Schrodinger-Poisson equations. The indium composition and thickness of the InGaAs channel are optimized according to the GEL position. The GEL position is not in direct proportion to 1/d^2 （d is the channel thickness） by considering the influence of electron distribution in the InGaAs channel. Indium composition 0.22 and channel thickness 9 nm are obtained by considering the mismatch between InGaAs and AlGaAs. Several PHEMT samples are grown according to the theoretical results and mobility 6300 cm^2 /V.s is achieved.

关键词： PHEMT Theoretical and Experimental Optimization of InGaAs Channels in GaAs PHEMT Structure

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Enhancement-mode Al2O3/InAlGaN/GaN MOS-HEMTs with a record drain current density of 1.7 A/mm and a threshold voltage of +1.5 V

Enhancement-mode Al2O3/InAlGaN/GaN MOS-HEMTs with a record d...

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China International Forum o Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

作者： Kai Zhang Jianjun Zhou Cen Kong Yuechan Kong Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing

ISBN: (纸本)9781509046140

The paper reports high performance enhancement-mode MOS-HEMT based on quaternary InAlGaN barrier. A self-aligned gate technology is used for gate recessing, dielectric deposition and gate electrode formation processes, where improved digital recessing process as well as O2 plasma-assisted Al 2 O 3 gate dielectric is developed. Fabricated E-mode MOS-HEMT delivers a record output current density of 1.7A/mm with a threshold voltage (V TH ) of 1.5 V, and a small on-resistance (R on ) of 2.0 Q-mm. Excellent V TH hysteresis and greatly improved gate leakage characteristics are also demonstrated.

关键词： Logic gates HEMTs MODFETs Dielectrics Aluminum oxide Threshold voltage Leakage currents

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Thin-barrier enhancement-mode AlGaN/GaN MIS-HEMT using ALD Al_2O_3 as gate insulator

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Journal of Semiconductors 2015年第9期36卷 62-65页

作者：王哲力周建军孔月婵孔岑董逊杨洋陈堂胜 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

A high-performance enhancement-mode （E-mode） gallium nitride （GaN）-based metal-insulator- semiconductor high electron mobility transistor （MIS-HEMT） that employs a 5-nm-thick aluminum gallium nitride （Al0.3Ga0.7N） as a barrier layer and relies on silicon nitride （SIN） passivation to control the 2DEG density is presented. Unlike the SiN passivation, aluminum oxide （AL2O3） by atomic layer deposition （ALD） on A1GaN surface would not increase the 2DEG density in the heterointerface. ALD AL2O3 was used as gate insulator after the depletion by etching of the SiN in the gate region. The E-mode MIS-HEMT with gate length （LG） of 1 μm showed a maximum drain current density （IDs） of 657 mA/mm, a maximum extrinsic transconductance （gin） of 187 mS/ram and a threshold voltage （Vth） of 1 V. Comparing with the corresponding E-mode HEMT, the device performances had been greatly improved due to the insertion of AL2O3 gate insulator. This provided an excellent way to realize E-mode A1GaN/GaN MIS-HEMTs with both high Vth and IDS.

关键词： enhancement-mode （E-mode） AIGaN/GaN metal-insulator-semiconductor high electron mobilitytransistor （MIS-HEMT） atomic layer deposition （ALD） AL2O3

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High power performance AlGaN/GaN HEMT with 0.1 μm Y-shaped gate encapsulated with low-κ BCB

High power performance AlGaN/GaN HEMT with 0.1 μm Y-shaped ...

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IEEE Conference on Electron Devices and Solid-State circuits

作者： Xinxin Yu Jianjun Zhou Yuechan Kong Daqing Peng Weibo Wang Fangjin Guo Haiyan Lu Wen Wang Cen Kong Zhonghui Li Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China

ISBN: (纸本)9781509018314

High power performance AlGaN/GaN HEMT devices with 0.1 μm Y-shaped gates encapsulated with low-κ BCB are reported. The maximum drain current and transconductance of the device are 1.15 A/mm and 350 mS/mm, respectively. The two-terminal breakdown voltage exceeds 30 V, which ensures a high operating voltage. Using the novel 0.1 μm low parasitic Y-shaped gate associated with AlGaN back barrier, a f T of 90 GHz and a f max of 170 GHz were obtained for the device. Through measurements of the W-band GaN MMIC PA, ability of 1.55 W/mm output power density was achieved for the device at frequency of 92 GHz. These outstanding performance indicates the devices are suitable for W-band MMIC applications.

关键词： Decision support systems Logic gates Conferences Electron devices Solid state circuits Gain

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High performance ultra-thin quaternary InAlGaN barrier HEMTs with fT > 260 GHz

High performance ultra-thin quaternary InAlGaN barrier HEMTs...

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China International Forum o Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

作者： Guangrun Zhu Kai Zhang Xinxin Yu Yuechan Kong Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing P. R. China

ISBN: (纸本)9781509046140

We fabricated the depletion-mode high-electron mobility transistors (HEMTs) based on a quaternary barrier InAlGaN/AlN/GaN heterostructure on SiC substrate. A 60-nm rectangular-shape gate was defined through e-beam lithography and subsequent Ni/Au (20 nm/80 nm) metal evaporation. Our device shows a high DC drain current density of 2.5 A/mm, a low on-resistance Ron of 0.94 Ω.mm in the linear region, a high peak extrinsic transconductance of 0.97 S/mm, and a high current-gain cutoff frequency of 261 GHz. Besides, a high f T . L g product of 15.7 GHz.μm was achieved. The drain-induced barrier lowering (DIBL) is calculated to be 200 mV/V at I D =1 mA/mm, implying moderate short-channel effect in our device. To our knowledge, this is among the best f T performance for GaN-based HEMTs with a gate length of around 60 nm.

关键词： HEMTs MODFETs Logic gates Gallium nitride Performance evaluation Aluminum gallium nitride Wide band gap semiconductors

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