With the increasing number of users and emerging new applications, the demand for mobile data traffic is growing rapidly. The limited spectrum resources of the traditional microwave and millimeter-wave frequency bands...
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With the increasing number of users and emerging new applications, the demand for mobile data traffic is growing rapidly. The limited spectrum resources of the traditional microwave and millimeter-wave frequency bands can no longer support the future wireless communication systems with higher system capacity and data throughput. The terahertz(THz) frequency bands have abundant spectrum resources, which can provide sufficient bandwidth to expand channel capacity and increase transmission data rate. In addition, with the rapid development of silicon-based semiconductor technology,its characteristic size keeps decreasing, and the radio frequency performance of active devices is gradually approaching the performance of III-V semiconductor technology. The realization of THz communication systems based on low-cost, high-stability, and easy-to-integrate silicon-based process has become a feasible solution. This review summarizes the reported silicon-based THz communication systems, as well as the key sub-circuit chips in these systems, including the local oscillator, power amplifier, low noise amplifier, on-chip antenna and transceiver chip, etc.
A 4th-order subharmonic downconversion mixer with a radio frequency (RF) of 480 GHz and intermediate frequency (IF) of 20 GHz that employs MOS symmetric varactors (SVARs) is demonstrated in 65-nm CMOS. The mixer achie...
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In this paper, an ultra-wideband 6-bit digitally controlled attenuator MMIC for the active phased array that integrates positive voltage digital driving circuits was developed, utilizing GaAs enhanced and depletion mo...
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In this paper, an aging small-signal S-parameters modeling method for microwave transistors is explored using a genetic algorithm (GA) to optimize the Extreme Learning Machine (ELM) neural network. A dual GA-ELM neura...
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As a front-end signal processor in the receiver, the low noise amplifier has a crucial impact on the performance of the entire signal link. In this paper, a 40-67GHz broadband low noise amplifier MMIC is designed by ...
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A precise integration of the optoelectronic device onto a functional platform, such as silicon photonics, LiNbO3 photonics or Si CMOS, is the key approach that makes the union of the different parts. Here, we propose ...
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A 4th-order subharmonic downconversion mixer with a radio frequency (RF) of 480 GHz and intermediate frequency (IF) of 20 GHz that employs MOS symmetric varactors (SVARs) is demonstrated in 65-nm CMOS. The mixer achie...
A 4th-order subharmonic downconversion mixer with a radio frequency (RF) of 480 GHz and intermediate frequency (IF) of 20 GHz that employs MOS symmetric varactors (SVARs) is demonstrated in 65-nm CMOS. The mixer achieves the minimum conversion loss of 25 dB at 20 GHz, VG = 0.5 V and VNW = 1 V. The return loss of the output port can reach nearly 30 dB, achieving a good matching effect, and can operate at a LO power of 9 dBm. The 4-GHz IF bandwidth spans between 18 and 22 GHz.
This paper presents a blind calibration algorithm for a multi-channel time-interleaved analog-to-digital conversion system implemented in MATLAB/simulink. The behavior level simulation of the calibration system is car...
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This paper demonstrates the designed process and experimental performance of a W -band low-noise amplifier (LNA) MMIC based on a 0.1 mu m gate length GaN-on-SiC process. A considerable available gain can be realized a...
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A Doherty Power Amplifier (PA) with high efficiency and high linearity that can be used in smart communication devices such as mobile phones in the sub-6GHz frequency band is proposed. This Doherty PA uses the InGaP/G...
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