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Heterogeneous integration of GaAs pHEMT and Si CMOS on the same chip

Chinese Physics B 2016年第6期25卷 494-499页

作者：吴立枢赵岩沈宏昌张有涛陈堂胜 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

In this work,we demonstrate the technology of wafer-scale transistor-level heterogeneous integration of Ga As pseudomorphic high electron mobility transistors（p HEMTs） and Si complementary metal–oxide semiconductor（CMOS） on the same Silicon *** As p HEMTs are vertical stacked at the top of the Si CMOS wafer using a wafer bonding technique,and the best alignment accuracy of 5 μm is *** a circuit example,a wide band Ga As digital controlled switch is fabricated,which features the technologies of a digital control circuit in Si CMOS and a switch circuit in Ga As p HEMT,15% smaller than the area of normal Ga As and Si CMOS circuits.

关键词： Si CMOS GaAs pHEMT heterogeneous integration benzocyclobutene

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Structure and Strain Properties of GaN Films Grown on Si（111） Substrates with AlxGa1-xN/AlyGa1-yN Superlattices

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Chinese Physics Letters 2015年第5期32卷 153-156页

作者：潘磊倪金玉郁鑫鑫董逊彭大青李传皓李忠辉陈堂胜 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

CaN films with an AlxGa1-xN/AlyGa1-xN superlattice （SL） buffer layer are grown on Si（111） substrates by metal-organic chemical vapor deposition （MOCVD）. The structure and strain properties of the samples are studied by optical microscopy, Raman spectroscopy, x-ray diffractometry and atomic force microscopy. The results show that the strain status and crystalline quality of the CaN layers are strongly dependent on the difference of the Al composition between AlxCa1-xN barriers and AlyCa1-yN wells in the SLs. With a large Al composition difference, the CaN film tends to generate cracks on the surface due to the severe relaxation of the SLs. Otherwise, when using a small Al composition difference, the crystalline quality of the CaN layer degrades due to the poor function of the SLs in filtering dislocations. Under an optimized condition that the Al composition difference equals 0.1, the crack-free and compressive strained CaN film with an improved crystalline quality is achieved. Therefore, the AlxGa1-xN/AlyGal-yN SL buffer layer is a promising buffer structure for growing thick CaN films on Si substrates without crack generation.

关键词： GaN x)N/Al_yGa y)N Superlattices Substrates with Al_xGa Structure and Strain Properties of GaN Films Grown on Si

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Research on Silicon-Based Terahertz Communication integrated circuits

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Chinese Journal of Electronics 2022年第3期31卷 516-533页

作者： ZHOU Peigen CHEN Jixin TANG Siyuan YU Jiayang WANG Chen LI Huanbo LU Haiyan YAN Pinpin HOU Debin CHEN Zhe HONG Wei State Key Laboratory of Millimeter Waves Southeast University Science and Technology on Monolithic Integrated Circuits and Modules Laboratory

With the increasing number of users and emerging new applications, the demand for mobile data traffic is growing rapidly. The limited spectrum resources of the traditional microwave and millimeter-wave frequency bands can no longer support the future wireless communication systems with higher system capacity and data throughput. The terahertz(THz) frequency bands have abundant spectrum resources, which can provide sufficient bandwidth to expand channel capacity and increase transmission data rate. In addition, with the rapid development of silicon-based semiconductor technology,its characteristic size keeps decreasing, and the radio frequency performance of active devices is gradually approaching the performance of III-V semiconductor technology. The realization of THz communication systems based on low-cost, high-stability, and easy-to-integrate silicon-based process has become a feasible solution. This review summarizes the reported silicon-based THz communication systems, as well as the key sub-circuit chips in these systems, including the local oscillator, power amplifier, low noise amplifier, on-chip antenna and transceiver chip, etc.

关键词： abundant spectrum resources silicon-based process silicon-based terahertz communication integrated circuits channel capacity silicon-based semiconductor technology III-V semiconductor technology mobile data traffic millimetre wave integrated circuits future wireless communication systems millimetre wave communication radio frequency performance traditional microwave frequency bands higher system capacity data throughput mobile radio transmission data rate radio transceivers key sub-circuit chips reported silicon-based THz communication systems millimeter-wave frequency bands

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A Substitution for the High-κ Dielectric in an AlGaN/GaN Metal-insulator-Semiconductor Heterostructure

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Chinese Physics Letters 2012年第5期29卷 225-228页

作者： KONG Yue-Chan XUE Fang-Shi ZHOU Jian-Jun LI Liang CHEN Chen JIANG Wen-Hai Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices InstituteNanjing 210016

Paraelectric state ferroelectric material is proposed as a novel substitution for the conventional high-k dielectric used in AlGaN/GaN metal-insulator-semiconductor (MIS) field-effect *** superior potential for improving device transconductance is due to its unique switchable polar *** self-consistent calculation involving the switchable polarization of the paraelectric,the 2DEG properties and C-V characteristics are investigated and compared for the novel AlGaN/GaN metal-paraelectric-semiconductor (MPS) structure and an equivalent conventional MIS *** is shown that owing to the paraelectric polarization,the gate control of the 2DEG density is remarkably enhanced in the MPS structure and the gate capacitance is significantly improved with a smaller threshold *** self-consistent polarization of the paraelectric in the MPS structure is non-linsarly dependent on the saturated polarization,which implies an optimum saturated polarization of 5-10 μC/cm^(2) for the paraelectric.

关键词： polarization insulator saturated

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Theoretical and Experimental Optimization of InGaAs Channels in GaAs PHEMT Structure

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Chinese Physics Letters 2015年第6期32卷 173-175页

作者：高汉超尹志军 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

The ground-state energy level （GEL） and electron distribution of GaAs pseudomorphic high-electron-mobility transistors （PHEMTs） are analyzed by a self-consistent solution to the Schrodinger-Poisson equations. The indium composition and thickness of the InGaAs channel are optimized according to the GEL position. The GEL position is not in direct proportion to 1/d^2 （d is the channel thickness） by considering the influence of electron distribution in the InGaAs channel. Indium composition 0.22 and channel thickness 9 nm are obtained by considering the mismatch between InGaAs and AlGaAs. Several PHEMT samples are grown according to the theoretical results and mobility 6300 cm^2 /V.s is achieved.

关键词： PHEMT Theoretical and Experimental Optimization of InGaAs Channels in GaAs PHEMT Structure

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AlGaN/GaN HEMTs on 4-Inch Silicon Substrates in the Presence of 2.7-μm -Thick Epilayers with the Maximum Off-State Breakdown Voltage of 500 V

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Chinese Physics Letters 2014年第3期31卷 129-132页

作者： YU Xin-Xin NI Jin-Yu LI Zhong-Hui KONG Cen ZHOU Jian-Jun DONG Xun PAN Lei KONG Yue-Chan CHEN Tang-Sheng Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing 210016

We report on the high breakdown performance of AlGaN/GaN high electron mobility transistors （HEMTs） grown on 4-inch silicon substrates. The HEMT structure including three Al-content step-graded AlGaN transition layers has a total thickness of 2.7 μm. The HEMT with a gate width WG of 300 μm acquires a maximum off-state breakdown voltage （BV） of 550 V and a maximum drain current of 527 mA/mm at a gate voltage of 2 V. It is found that BV is improved with the increase of gate-drain distance LGD until it exceeds 8 μm and then BV is tended to saturation. While the maximum drain current drops continuously with the increase of LGD. The HEMT with a WG of 3 mm and a LGD of 8 μm obtains an off-state BV of 500 V. Its maximum leakage current is just 13 μA when the drain voltage is below 400 V. The device exhibits a maximum output current of 1 A with a maximum transconductance of 242 mS.

关键词： HIGH electron mobility transistors RESEARCH SILICON -- Research GALLIUM nitride SEMICONDUCTOR doping PHYSICS research

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Development of 10 kV 4H-SiC JBS diode with FGR termination

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Journal of Semiconductors 2014年第7期35卷 56-59页

作者：黄润华陶永洪曹鹏飞汪玲陈刚柏松栗瑞李赟赵志飞 Nanjing Electronic Devices Institute Science and Technology on Monolithic Integrated Circuits and Modules Laboratory

The design, fabrication, and electrical characteristics of the 4H-SiC JBS diode with a breakdown voltage higher than 10 kV are presented. 60 floating guard rings have been used in the fabrication. Numerical simulations have been performed to select the doping level and thickness of the drift layer and the effectiveness of the edge termination technique. The n-type epilayer is 100 μm in thickness with a doping of 6 × 10^14 cm^-3. The on-state voltage was 2.7 V at JF = 13 A/cm^2.

关键词： 4It-SiC JBS diodes edge termination floating guard rings

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Thin-barrier enhancement-mode AlGaN/GaN MIS-HEMT using ALD Al_2O_3 as gate insulator

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Journal of Semiconductors 2015年第9期36卷 62-65页

作者：王哲力周建军孔月婵孔岑董逊杨洋陈堂胜 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

A high-performance enhancement-mode （E-mode） gallium nitride （GaN）-based metal-insulator- semiconductor high electron mobility transistor （MIS-HEMT） that employs a 5-nm-thick aluminum gallium nitride （Al0.3Ga0.7N） as a barrier layer and relies on silicon nitride （SIN） passivation to control the 2DEG density is presented. Unlike the SiN passivation, aluminum oxide （AL2O3） by atomic layer deposition （ALD） on A1GaN surface would not increase the 2DEG density in the heterointerface. ALD AL2O3 was used as gate insulator after the depletion by etching of the SiN in the gate region. The E-mode MIS-HEMT with gate length （LG） of 1 μm showed a maximum drain current density （IDs） of 657 mA/mm, a maximum extrinsic transconductance （gin） of 187 mS/ram and a threshold voltage （Vth） of 1 V. Comparing with the corresponding E-mode HEMT, the device performances had been greatly improved due to the insertion of AL2O3 gate insulator. This provided an excellent way to realize E-mode A1GaN/GaN MIS-HEMTs with both high Vth and IDS.

关键词： enhancement-mode （E-mode） AIGaN/GaN metal-insulator-semiconductor high electron mobilitytransistor （MIS-HEMT） atomic layer deposition （ALD） AL2O3

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Research on the diamond MISFET

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Journal of Semiconductors 2013年第3期34卷 48-50页

作者：周建军柏松孔岑耿习娇陆海燕孔月婵陈堂胜 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

Based on the hydrogen-terminated surface channel diamond material,a 1μm gate length diamond metal-insulator-semiconductor field-effect transistor(MISFET) was *** gate dielectric Al_2O_3 was formed by naturally oxidated thin Al metal layer,and a less than 2 pA gate leakage current was obtained at gate bias between -4 V and 4 *** DC characteristic of the diamond MISFET showed a drain-current density of 80 mA/mm at drain voltage of -5 V,and a maximum transconductance of 22 mS/mm at gate-source voltage of -3 *** the small signal measurement,a current gain cutoff frequency of 2.1 GHz was also obtained.

关键词： diamond MISFET Al_2O_3

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A THz InGaAs/InP double heterojunction bipolar transistor with f_(max)=325 GHz and BV_(CBO)=10.6 V

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Journal of Semiconductors 2013年第5期34卷 76-78页

作者：程伟王元赵岩陆海燕高汉超杨乃彬 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

A common-base four finger InGaAs/InP double heterostructure bipolar transistor （DHBT） has been designed and fabricated using triple mesa structure and planarization technology. All processes are on 3-inch wafers. The area of each emitter finger is 1 × 15 μm2. The maximum oscillation frequency （fmax） is 325 GHz and the breakdown voltage BV_CBO is 10.6 V, which are to our knowledge both the highest fmax and BV_CBo ever reported for InGaAs/InP DHBTs in China. The high speed InGaAs/InP DHBT with a high breakdown voltage is promising for submillimeter-wave and THz electronics.

关键词： InP DHBT THz high breakdown

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