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Cu Pillar Low Temperature Bonding and Interconnection technology of for 3D RF Microsystem

Journal of Physics: Conference Series 2018年第1期986卷

作者： G X Shi K Q Qian M Huang Y W Yu J Zhu Nanjing Electronic Devices Institute Nanjing 210016 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing 210016 China

In this paper 3D interconnects technologies used Cu pillars are discussed with respect to RF microsystem. While 2.5D Si interposer and 3D packaging seem to rely to cu pillars for the coming years, RF microsystem used the heterogeneous chip such as GaAs integration with Si interposers should be at low temperature. The pillars were constituted by Cu (2 micron) -Ni (2 micron) -Cu (3 micron) -Sn (1 micron) multilayer metal and total height is 8 micron on the front-side of the wafer by using electroplating. The wafer backside Cu pillar is obtained by temporary bonding, thinning and silicon surface etching. The RF interposers are stacked by Cu-Sn eutectic bonding at 260 °C. Analyzed the reliability of different pillar bonding structure.

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An investigation into the high strength bonding technology of wafer-to-wafer with large-scale au line

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Journal of Physics: Conference Series 2019年第1期1209卷

作者： S X Wang J Zhu S X Jia Y Wu Nanjing Electronic Devices Institute No.524 zhongshan roadNanjing Jiangsu Province China Tel.: +86-25-68005912 Science and Technology on Monolithic Integrate Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing City Jiangsu Province China

As well known, the sandwich-like construction is the classic unit construction of MEMS microthrusters, and these three layers should be bonded between the igniting circuit layer and the microchamber-array-layer, the microchamber-array-layer and the micronozzle-array-layer. It's bonded by BCB between the igniting circuit layer and the microchamber-array-layer, and their bonding strength is the key factor to determine the reliability of MEMS microthruster-array-chips. And the failure is mostly discovered on the bonding surface of the igniting circuit layer and the microchamber-array-layer in ignition experiments. For solving the bonding failure, the failure reason will be analysed and the improved bonding technique is designed. Here, the bonding strength is externalized, and the average shear strength increase to 11.63MPa from 2.80Mpa, this is over 4times than before. The igniting experiments prove the Si3N4 layer can enhance the BCB bonding strength and this new bonding method does solve the bonding problem of MEMS microthruster-array-chips.

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Effect of NH3 flow on incorporation efficiency of Al composition and reduction of surface donor states in AlGaN grown by MOVPE

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Physica Status Solidi (C) Current Topics in Solid State Physics 2016年第5-6期13卷 214-216页

作者： Gao, Tao Xu, Ruimin Zhang, Dongguo Li, Zhonghui Peng, Daqing Don, Xun Chen, Tangsheng Chengdu611731 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China

We have studied the effect of various ammonia (NH3) flow rates on AlGaN film grown on GaN using c-plane sapphire as substrate by metal organic chemical vapour deposition. The influences of NH3 flow on the species diffusion anisotropy of thick AlGaN films were investigated by scanning electron microscopy, atomic force microscopy and high-resolution X-ray diffraction measurements. It is demonstrated that, in addition to the larger NH3 flow, growth of the AlGaN epilayer under the same trimethylaluminum (TMAl) flow condition as others is a critical factor for less micro-cracks. The results of X-ray double crystal diffraction showed that the AlGaN films with larger ammonia flow exhibited lower Al content and smaller (0002) rocking curve width, and while NH3 flow rate reached 23 liter per minute, a (0002) rocking curve width of 295 arcsecond was reached. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

关键词： Metallorganic chemical vapor deposition

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High-performance enhancement-mode AlGaN/GaN MOS-HEMTs with fluorinated stack gate dielectrics and thin barrier layer

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Journal of Semiconductors 2016年第6期37卷 112-115页

作者：高涛徐锐敏张凯孔月婵周建军孔岑郁鑫鑫董迅陈堂胜 Fundamental Science on EHF Laboratory University of Electronic Science and Technology of China (UESTC) Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

We present high-performance enhancement-mode AlGaN/GaN metal-oxide-semiconductor highelectron mobility transistors（MOS-HEMTs） by a fluorinated gate dielectric technique.A nanolaminate of an Al_2O_3/La_xAl_（1-x）O_3/Al_2O_3 stack（x≈0.33） grown by atomic layer deposition is employed to avoid fluorine ions implantation into the scaled barrier *** enhancement-mode MOS-HEMTs exhibit an excellent performance as compared to those with the conventional dielectric-last technique,delivering a large maximum drain current of 916 mA/mm and simultaneously a high peak transconductance of 342 mS/*** balanced DC characteristics indicate that advanced gate stack dielectrics combined with buffered fluorine ions implantation have a great potential for high speed GaN E/D-mode integrated circuit applications.

关键词： AlGaN/GaN enhancement-mode（E-mode） stack gate dielectrics atomic layer deposition（ALD）

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An artificial neural network based nonlinear behavioral model for RF power transistors

An artificial neural network based nonlinear behavioral mode...

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Asia-Pacific Conference on Microwave

作者： Jialin Cai Jie Wang Chao Yu Haiyan Lu Jun Liu Lingling Sun Ministry of Education Hangzhou Dianzi University Hangzhou China State Key Laboratory of Millimeter Waves Southeast University Nanjing China The Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China

In this paper, a frequency domain, nonlinear, behavioral model for RF power transistors, based on an artificial neural network (ANN), is proposed and validated. The model is identified using the back-propagation algorithm from the incident and scattered wave data of the RF transistor. The model has been extracted and validated on Cree GaN HEMT device. Both simulation and measurement examples are presented. Compared with existing nonlinear transistor behavioral models, which are all input-power dependent, the new model is able to effectively predict the behavior of a transistor over the entire Smith chart, at different levels of input power with only a single set of model coefficients.

关键词： Radio frequency integrated circuit modeling Microwave amplifiers Microwave communication Microwave FETs

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High performance ultra-thin quaternary InAlGaN barrier HEMTs with fT > 260 GHz

High performance ultra-thin quaternary InAlGaN barrier HEMTs...

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2016 International Forum on Wide Bandgap Semiconductors China, IFWS 2016

作者： Zhu, Guangrun Zhang, Kai Yu, Xinxin Kong, Yuechan Chen, Tangsheng Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute No.524 Zhongshan East Road Nanjing China

ISBN: (纸本)9781509046133

We fabricated the depletion-mode high-electron mobility transistors (HEMTs) based on a quaternary barrier InAlGaN/AlN/GaN heterostructure on SiC substrate. A 60-nm rectangular-shape gate was defined through e-beam lithography and subsequent Ni/Au (20 nm/80 nm) metal evaporation. Our device shows a high DC drain current density of 2.5 A/mm, a low on-resistance Ron of 0.94 Ω•mm in the linear region, a high peak extrinsic transconductance of 0.97 S/mm, and a high current-gain cutoff frequency of 261 GHz. Besides, a high fT • Lg product of 15.7 GHz•μm was achieved. The drain-induced barrier lowering (DIBL) is calculated to be 200 mV/V at ID=1 mA/mm, implying moderate short-channel effect in our device. To our knowledge, this is among the best fT performance for GaN-based HEMTs with a gate length of around 60 nm. © 2016 IEEE.

关键词： High electron mobility transistors

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Structure and Strain Properties of GaN Films Grown on Si（111） Substrates with AlxGa1-xN/AlyGa1-yN Superlattices

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Chinese Physics Letters 2015年第5期32卷 153-156页

作者：潘磊倪金玉郁鑫鑫董逊彭大青李传皓李忠辉陈堂胜 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

CaN films with an AlxGa1-xN/AlyGa1-xN superlattice （SL） buffer layer are grown on Si（111） substrates by metal-organic chemical vapor deposition （MOCVD）. The structure and strain properties of the samples are studied by optical microscopy, Raman spectroscopy, x-ray diffractometry and atomic force microscopy. The results show that the strain status and crystalline quality of the CaN layers are strongly dependent on the difference of the Al composition between AlxCa1-xN barriers and AlyCa1-yN wells in the SLs. With a large Al composition difference, the CaN film tends to generate cracks on the surface due to the severe relaxation of the SLs. Otherwise, when using a small Al composition difference, the crystalline quality of the CaN layer degrades due to the poor function of the SLs in filtering dislocations. Under an optimized condition that the Al composition difference equals 0.1, the crack-free and compressive strained CaN film with an improved crystalline quality is achieved. Therefore, the AlxGa1-xN/AlyGal-yN SL buffer layer is a promising buffer structure for growing thick CaN films on Si substrates without crack generation.

关键词： GaN x)N/Al_yGa y)N Superlattices Substrates with Al_xGa Structure and Strain Properties of GaN Films Grown on Si

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An investigation into the SiC anti-ablation membrane of MEMS microthrusters

An investigation into the SiC anti-ablation membrane of MEMS...

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Design, Test, Integration and Packaging of MEMS/MOEMS

作者： Jian Zhu Shouxu Wang Science and Technology on Monolithic Integrate Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing City PR China Micro/nano R&D Dpartment Nanjing Electronic Devices Institute Nanjing City PR China

Silicon-based MEMS microthruster matrix has gained great attention as a micro-impulsion system in recent years, especially in application of attitude control of the nanosatellites. Although silicon serves well as the structural material for microthruster matrix in several aspects, its ability to resist ablation is rather weak. In this paper, SiC membrane is introduced to the surface of micro-chambers in order to enhance the ablation resistance of silicon-based MEMS microthrusters. A time-efficient four-step deposition process was carried out to prepare high-quality cavity-free SiC membrane. Microthrusters with SiC membrane coverage were tested under high-energy propellant experiment. The result shows that the SiC membrane can perfectly resist the ablation of microthrusters from nano-Al/CuO propellant.

关键词： Silicon carbide Micromechanical devices Surface treatment Silicon Propulsion Surface morphology Combustion

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Growth of compressively-strained GaN films on Si(111) substrates with thick AlGaN transition and AlGaN superlattice buffer layers

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Physica Status Solidi (C) Current Topics in Solid State Physics 2016年第5-6期13卷 181-185页

作者： Pan, Lei Dong, Xun Ni, Jinyu Li, Zhonghui Yang, Qiankun Peng, Daqing Li, Chuanhao Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China

In this paper, crack-free GaN films with step-graded AlGaN transition layer and AlGaN superlattice layer as buffer layers were grown on Si(111) substrate by metal-organic chemical vapor deposition(MOCVD). The combination of both buffers effectively improves the properties of GaN layer. With the optimization of the buffer structures, high quality compressively-strained GaN layers with thickness up to 3.6 μm have been obtained on Si(111) substrates. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

关键词： Substrates

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Theoretical and Experimental Optimization of InGaAs Channels in GaAs PHEMT Structure

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Chinese Physics Letters 2015年第6期32卷 173-175页

作者：高汉超尹志军 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

The ground-state energy level （GEL） and electron distribution of GaAs pseudomorphic high-electron-mobility transistors （PHEMTs） are analyzed by a self-consistent solution to the Schrodinger-Poisson equations. The indium composition and thickness of the InGaAs channel are optimized according to the GEL position. The GEL position is not in direct proportion to 1/d^2 （d is the channel thickness） by considering the influence of electron distribution in the InGaAs channel. Indium composition 0.22 and channel thickness 9 nm are obtained by considering the mismatch between InGaAs and AlGaAs. Several PHEMT samples are grown according to the theoretical results and mobility 6300 cm^2 /V.s is achieved.

关键词： PHEMT Theoretical and Experimental Optimization of InGaAs Channels in GaAs PHEMT Structure

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