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2013 International Conference on Precision Mechanical Instruments and Measurement technology, ICPMIMT 2013

作者： Ding, Xiao Ming Chen, Gang Wang, Dian Li Nanjing Electronic Device Institute Nanjing 210016 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing 210016 China

Wherever possible, we have adopted the newest modern technology. The Au-Si binary alloy sintered chips are silicon or silicon carbide power devices. The sintered temperature is 380 to 390°C. Using micro-infrared thermal image instrument, compares the microwave transient infrared thermal image test results of sample devices which chips welded process under two different process condition. Measured results show that the thermal resistance after chip welded process optimized is twenty percent smaller than before. It describes the importance of controlling the chip welded process parameters during assembly. © 2013 Trans Tech Publications Ltd, Switzerland.

关键词： Junction temperature

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Direct extraction method of InP HBT small-signal model

Direct extraction method of InP HBT small-signal model

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2013 International Conference on Precision Mechanical Instruments and Measurement technology, ICPMIMT 2013

作者： Lu, Hai Yan Cheng, Wei Chen, Gang Chen, Tang Sheng Chen, Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing 210016 China Nanjing Electronic Device Institute Nanjing 210016 China

An accurate method for extracting the elements of InP HBT small-signal model parameters is proposed in this paper. The method can accurately resolve the most important internal parameters from the measured S-parameters, and is not sensitive to the values of parasitic parameters. The initial values of the parasitic are extracted by using a set of test structure, and the intrinsic elements determined by using the analytical method are described as functions of the parasitic elements. The extraction procedure uses a set of closed-form expressions derived without any approximation. An experimental validation is carried out on three HBT devices and satisfactory results are obtained up to 20 GHz. © 2013 Trans Tech Publications Ltd, Switzerland.

关键词： Heterojunction bipolar transistors

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A 42 to 56GHz wide band CMOS power amplifier

A 42 to 56GHz wide band CMOS power amplifier

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2013 6th UK, Europe, China Millimeter Waves and THz technology Workshop, UCMMT 2013

作者： Yan, Pinpin Chen, Jixin Hong, Wei Jiang, Xin State Key Laboratory of Millimeter Waves School of Information Science and Engineering Southeast University Nanjing 210096 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing 210016 China

A wide band power amplifier is designed by using 90nm CMOS process. By proper arrangement of frequency response among circuit stages, the amplifier exhibit maximum gain of 15dB at 47-48GHz and 3dB bandwidth from 42 to... 详细信息

ISBN: (纸本)9781479909810

关键词： Power amplifiers

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Study on 2000V SiC JBS Diodes

Study on 2000V SiC JBS Diodes

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2013 3rd International Conference on Electric and Electronics(EEIC 2013)

作者： Gang Chen Lin Wang Runhua Huang Song Bai Yun Li Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

High voltage 4H-SiC Ti schottky junction barrier schottky（JBS） diode with breakdown voltage of 2000 V and forward current of 2A has been fabricated. A low reverse leakage current below 1.9×10A/cm at the bias voltage of-2kV has been obtained. The forward on-state current was 2A at V = 1.9V and 5A at VF = 3V. The chip is 2.3mm×2.3mm. The turn-on voltage is about 1.0V. The on-state resistance is 19.3m?·cm. The doping and thickness of the N-type drift layer and the device structure have been performed by numerical simulations. The SiC JBS devices have been fabricated and the processes were in detail. The die was packaged with SMB mode. The thickness of the Nepilayer is 17μm, and the doping concentration is 4.6×10cm. A floating guard rings edge termination have been used to improve the effectiveness of the edge termination technique. By using Ti/Ni/Ag multilayer metal structure, the double side Ag process of 4H-SiC JBS diode is formed. We use the PECVD SiN/SiO as the passivation dielectric and a non photosensitive polyamide as the passivation in the end.

关键词： 4H-SiC JBS Floating guard rings

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107W CW SiC MESFET with 48.1% PAE

107W CW SiC MESFET with 48.1% PAE

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2013 IEEE 5th International Symposium on Microwave,Antenna,Propagation and EMC Technologies for Wireless Communications

作者： Yonghong Tao Song Bai Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

ISBN: (纸本)9781467360760

In the paper,30mm high-power SiC MESFETs have been *** load-pull testing at 1.5 GHz and 48V drain to source voltage,packaged 2 ×30mm SiC MESFET transistors were demonstrated with output power higher than 107W with 48.1% PAE,and the gain was 10.3 dB under continuous wave RF *** gate periphery divices of 1mm SiC MESFET exhibited 35 dBm output power with more than 55% PAE,and the gain was 12.3 dB under continuous wave RF operation at 1.5 GHz and 48V drain to source voltage.

关键词： SiC MESFET CW load-pull MESFETs load-pull Output power Gain

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Research and Implementation of 150W SiC Internally Match and Power Combiner at S Band

Research and Implementation of 150W SiC Internally Match and...

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2013 IEEE 5th International Symposium on Microwave,Antenna,Propagation and EMC Technologies for Wireless Communications

作者： Gang Chen Shichang Zhong Yuchao Li Song Bai Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

ISBN: (纸本)9781467360760

As one of the third generation semiconductor materials,SiC has many advantages,such as high-power,high gate-drain breakdown voltage,heat stability and anti-radiation *** it is of high value for study and application *** paper bases on 20mm SiC MESFET which is made by NEDI,through internally match circuit and power combiner technology,designs a power *** power module output power has 150W with the gain is 9dB at S-band 2.8GHz under a pulse condition of 100us pulse width and 10% duty cycle.

关键词： SiC MESFET Internally Match Circuit Power Combiner Power combiners pulse condition power module DUTY CYCLE Superhigh frequency

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Study on Fabrication and Fast Switching of High Voltage SiC JFET

Study on Fabrication and Fast Switching of High Voltage SiC ...

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2013 International Conference on Solar Energy Materials and Energy Engineering(SEMEE 2013)

作者： Gang Chen Song Bai Runhua Huang Yonghong Tao Ao Liu Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

SiC devices have excellent properties such as ultra low loss, high withstand voltage, large capacity, high frequency, and high temperature operation compared with Si devices. The SiC JFET is expected to be appropriate for the power device because a JFET has no oxide-semiconductor interface in the channel region and does not use the low mobility SiC MOSFET inversion layer as a channel. Forward I-V up to 4A for SiC VJFET, Gate voltage from 2V to 3.5V by step 0.5V. Reverse Ⅰ-Ⅴ characteristics up to 4500V(VG=-8V) for SiC VJFET, Gate voltage from -4V to -8V by step -2V. Turn-off characteristics are studied and fast turn-off time of 136 ns at room temperature under DC voltage of 600 V is successfully demonstrated.

关键词： SiC JFET Ohmic Trench

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Application of 1200V-8A SiC JBS diodes in the motor system

Application of 1200V-8A SiC JBS diodes in the motor system

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2013 International Conference on Precision Mechanical Instruments and Measurement technology, ICPMIMT 2013

作者： Liu, Ao Chen, Gang Bai, Song Li, Rui Sun, Wei Feng Nanjing Electronic Device Institute Nanjing 210016 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing 210016 China National ASIC System Engineering Research Center Southeast University Nanjing 210096 China

1200V-8A 4H-SiC junction barrier schottky (JBS) diodes were designed and fabricated based on in-house SiC epitaxy and device technology. As a free-wheeling diode for the IGBT in inverter of motor system, the 1200V SiC JBS diode was compared to the Si ultra-fast diode from Fairchild Co. Ltd. The SiC diode achieved 88% recovery loss reduction and corresponding IGBT showed 35% lower turn-on loss. So, it will promote the application of motor system in high frequency and high efficiency. © 2013 Trans Tech Publications Ltd, Switzerland.

关键词： Silicon carbide

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Progress of High Voltage Trenched and Implanted 4H-SiC Vertical JFET

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Energy and Power Engineering 2013年第4期5卷 1284-1287页

作者： Gang Chen Song Bai Yonghong Tao Yun Li 1Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China 2Nanjing Electronic Devices Institute Nanjing China Nanjing Electronic Devices Institute Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China

A silicon carbide (SiC) vertical channel junction field effect transistor (VJFET) was fabricated based on in-house SiC epitaxial wafer with trenched and implanted method. Its forward drain current is in excess of 3.12 A (170 W/cm2) with a current gain of ID/IG = 19746 at gate bias VG = 3 V and drain bias VD = 5.5 V. The SiC VJFET device’s related specific on-resistance 54 mΩ·cm2. The BV gain is 250 V with Vg from -10 V to -4 V and is 350 V with Vg from -4 V to -2 V. Self-aligned floating guard rings provide edge termination that blocks 3180V at a gate bias of ?14 V and a drain-current density of 1.53 mA/cm2.

关键词： 4H-SiC VJFET Ohmic Trench Implant

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Study of small signal of 4H-SIC static induction transistor

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Telkomnika - Indonesian Journal of Electrical Engineering 2013年第5期11卷 2838-2844页

作者： Chen, Gang Lu, Yang Li, Li Bai, Song Li, Yun Lu, Haiyan Science and Technology on Monolithic Integrated Circuits and Modules Laboratory China Nanjing Electronic Devices Institute Nanjing 210016 China

Silicon carbide (SiC) SITs were fabricated using home-grown epi structures. The gate is a recessed gate - bottom contact (RG - B). We designed that the mesa space 2.5 μm and the gate channel is 1.5 μm. One cell has 400 source fingers and each source finger width is 50 μm. 0.5 mm gate periphery SiC SIT yielded a maximum drain current density of 160 mA/mm at a drain voltage of 80 V and a gate voltage of 2.5 V. The device blocking voltage with a gate bias of -16 V was 400 V. Packaged 0.5-mm devices were evaluated using amplifier circuits designed for class AB operations. Small signal of SIT was studied. the maximum stable gain (MSG) were 11.2 dB at 500MHz and 7.85 dB at L band 1 GHz with Vds = 80V and Vg = 2V. ©2013 Universitas Ahmad Dahlan.

关键词： Silicon carbide

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