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A Substitution for the High-κ Dielectric in an AlGaN/GaN Metal-insulator-Semiconductor Heterostructure

Chinese Physics Letters 2012年第5期29卷 225-228页

作者： KONG Yue-Chan XUE Fang-Shi ZHOU Jian-Jun LI Liang CHEN Chen JIANG Wen-Hai Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices InstituteNanjing 210016

Paraelectric state ferroelectric material is proposed as a novel substitution for the conventional high-k dielectric used in AlGaN/GaN metal-insulator-semiconductor (MIS) field-effect *** superior potential for improving device transconductance is due to its unique switchable polar *** self-consistent calculation involving the switchable polarization of the paraelectric,the 2DEG properties and C-V characteristics are investigated and compared for the novel AlGaN/GaN metal-paraelectric-semiconductor (MPS) structure and an equivalent conventional MIS *** is shown that owing to the paraelectric polarization,the gate control of the 2DEG density is remarkably enhanced in the MPS structure and the gate capacitance is significantly improved with a smaller threshold *** self-consistent polarization of the paraelectric in the MPS structure is non-linsarly dependent on the saturated polarization,which implies an optimum saturated polarization of 5-10 μC/cm^(2) for the paraelectric.

关键词： polarization insulator saturated

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High breakdown voltage InGaAs/InP double heterojunction bipolar transistors with f_(max)=256 GHz and BV_(CEO)= 8.3 V

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Journal of Semiconductors 2012年第1期33卷 56-58页

作者： Cheng Wei Zhao Yan Gao Hanchao Chen Chen Yang Naibin Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing 210016China

An InGaAs/InP DHBT with an InGaAsP composite collector is designed and fabricated using triple mesa structural and planarization technology. All processes are on 3-inch wafers. The DHBT with an emitter area of 1×15 μm2 exhibits a current cutoff frequency ft = 170 GHz and a maximum oscillation frequency fmax = 256 GHz. The breakdown voltage is 8.3 V, which is to our knowledge the highest BVcEo ever reported for InGaAs/InP DHBTs in China with comparable high frequency performances. The high speed InGaAs/InP DHBTs with high breakdown voltage are promising for voltage-controlled oscillator and mixer applications at W band or even higher frequencies.

关键词： InP double heterojunction bipolar transistor planarization

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Millimeter-wave fixed-tuned subharmonic mixers with planar Schottky diodes

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Journal of Semiconductors 2012年第11期33卷 95-99页

作者：姚常飞周明罗运生王毅刚许从海 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Department of Microwave and Millimeter Wave Modules Nanjing Electronic Devices Institute

Two different frequency bandwidth subharmonic mixers（SHM） using planar Schottky mixing diodes are discussed and ***-wave analysis is carried out to find the optimum diode embedding impedances with a lumped port for modeling the nonlinear *** SHM circuit is divided into several different parts and each part is optimized using the calculated diode *** divided parts are then combined and optimized *** exported S-parameter files of the global circuit are used for conversion loss（CL） *** the 150 GHz SHM,the lowest measured CL is 10.7 dB at 153 GHz,and typical CL is 12.5 dB in the frequency range of 135-165 *** lowest measured CL of the 180 GHz SHM is 5.8 dB at 240 GHz,and typical CL is 13.5 dB and 11.5 dB in the frequency range of 165-200 GHz and 210-240 GHz,respectively.

关键词： millimeter wave planar Schottky diodes subharmonic mixer conversion losses

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Improvement of low temperature GaN Interlayer on the property of the two-dimensional electron gas in AlGaN/GaN heterostructure

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Rengong Jingti Xuebao/Journal of Synthetic Crystals 2013年第7期42卷 1406-1409页

作者： Zhang, Dong-Guo Li, Zhong-Hui Peng, Da-Qing Dong, Xun Li, Liang Ni, Jin-Yu Science and Technology of Monolithic Integrated and Modules Circuits Laboratory Nanjing Electronic Devices Institute Nanjing 210016 China

The AlGaN/GaN two-dimensional electron gas material on sapphire substrate was grown by low-pressure MOCVD method, and the influence of the 2DEG transport property from the low-temperature GaN layer which was inserted in the GaN growth was investigated. Properties of the samples were studied by AFM and Hall measurement. The results indicated that the LT-GaN interlayer could improve the roughness of the surface, and obviously raise the electron mobility in the 2DEG. Hall measurement revealed that the mobility of 2110 cm2/V·s at room temperature could be achieved when the growth temperature of LT-GaN was 860°C.

关键词： III-V semiconductors

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A novel circuit architecture for fourth subharmonic mixers

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Journal of Semiconductors 2012年第6期33卷 56-60页

作者：姚常飞许从海周明罗运生 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Research Department of Microwave and Millimeter Wave Modules in Aerospace Nanjing Electronic Devices Institute

A circuit topology for high-order subharmonic（SH） mixers is *** phase cancellation of idle frequency components,the SH mixer circuit can eliminate the complicated design procedure of idle frequency ***,the SH mixer circuit can achieve a high port isolation by phase cancellation of the leakage LO, RF and idle frequency *** on the high-order SH mixer architecture,a new Ka-band fourth SH mixer is analyzed and designed,it shows the lowest measured conversion loss of 8.3 dB at 38.4 GHz and the loss is lower than 10.3 dB in 34-39 *** LO-IF,RF-LO,RF-IF port isolation are better than 30.7 dB,22.9dB and 46.5 dB,respectively.

关键词： SH mixers antiparallel diodes conversion loss harmonic balance analysis

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5A 1300V trenched and implanted 4H-SiC vertical JFET

5A 1300V trenched and implanted 4H-SiC vertical JFET

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4th International Conference on Mechanical and Electrical technology, ICMET 2012

作者： Chen, Gang Song, Xiaofeng Bai, Song Li, Li Li, Yun Chen, Zheng Wang, Wen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China

ISBN: (纸本)9783037855102

A silicon carbide (SiC) vertical channel junction field effect transistor (VJFET) was fabricated based on in-house SiC epitaxial wafer with lift-off trenched and implanted method. Its blocking voltage exceeds 1300V at gate bias VG = -6V and forward drain current is in excess of 5A at gate bias VG = 3V and drain bias VD = 3V. The SiC VJFET device's current density is 240A/cm2 at VG= 3V and VD = 3V, with related specific on-resistance 8.9mΩ·cm2. Further analysis reveals that the on-resistance depends greatly on ohmic contact resistance and the bonding spun gold. The specific on-resistance can be further reduced by improving the doping concentration of SiC channel epilayer and the device's ohmic contact. © (2012) Trans Tech Publications, Switzerland.

关键词： Silicon carbide

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Developing the Ka-band GaN power HEMT devices

Developing the Ka-band GaN power HEMT devices

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2012 5th Global Symposium on Millimeter-Waves, GSMM 2012

作者： Zhou, J.J. Dong, X. Kong, C. Kong, Y.C. Ren, C.J. Li, Z.H. Chen, T.S. Chen, C. Zhang, B. Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China

ISBN: (纸本)9781467313032

High quality Al0.3Ga0.7N/GaN/Al0.04Ga 0.96N double heterostructure was grown by metal-organic chemical vapor deposition (MOCVD). Two kinds of fabrication technology of Ka band GaN HEMT devices were developed. Using developed 0.25 μm self-aligned T-shaped gate technology, a 4.5 W/mm output power density and 28% PAE were obtained in continues wave (CW) mode at 34GHz. To increase the frequency performance of the GaN HEMT devices, a 0.15 μm Y-shaped gate technology was developed. By using this technology, the parasitic capacitance is effectively suppressed. The fT and fmax of the GaN HEMT device fabricated with the 0.15 μm Y-shaped gate technologies were greatly improved and reached 80GHz and 110GHz, respectively. A 3.1 W/mm output power density and 26.3% PAE were also obtained in CW mode at 34GHz. © 2012 IEEE.

关键词： III-V semiconductors

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The research on mm-wave power amplifier MMIC

The research on mm-wave power amplifier MMIC

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2012 IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless technology and Applications, IMWS 2012

作者： Zhang, Bin Bai, Song Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China

ISBN: (纸本)9781467309028

In this paper, we analyzed the technology of mm-wave power amplifier MMIC. We developed mm-wave GaAs pHEMT with a power density of 0.6W/mm at 35GHz. A fully monolithic 4-stage 4W mm-wave power amplifier was designed and fabricated The MMIC has an 8.96mm gate periphery on the output stage. Performance achieved was 24dB gain from 33-37GHz with a peak power of >4. 5W and PAE of 23%. © 2012 IEEE.

关键词： Power amplifiers

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DC magnetic field modulated doubly balanced monolithic mixer using magnetic thin film baluns

DC magnetic field modulated doubly balanced monolithic mixer...

引用

2012 International Conference on Microwave and Millimeter Wave technology, ICMMT 2012

作者： Li, Hui Kong, Cen Chen, Xiaojian Wang, Weibo Zhou, Jianjun Chen, Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Device Institute Nanjing 210016 China

ISBN: (纸本)9781467321839

A novel DC Magnetic Field modulated doubly balanced monolithic mixer consisting of NiFe-SiOx magnetic thin film spiral transformer-baluns is presented first time. The -3dB bandwidth of the mixer from original L/S-band (1.3-3GHz) was modulated to L/C-band (1.4-5.5GHz) while a DC magnetic field was applied. Besides, the conversion loss of the mixer was improved by 1dB decreasion at the same time. The fabrication process of the mixer was fully compatible with standard monolithic microwave integrated circuit (MMIC) process. © 2012 IEEE.

关键词： Silicon compounds

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Photoluminescence investigation on highly p^+ -doped GaAs_(1-y)Sb_y(y<0.3)

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science China(Technological sciences) 2012年第11期55卷 3200-3203页

作者： GAO HanChao YIN ZhiJun CHENG Wei LI ZhongHui XIE ZiLi School of Electronic Science and Engineering Key Laboratory of Advanced Photonic and Electronic MaterialsNanjing UniversityNanjing 210093China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices InstituteNanjing 210016China

Photoluminescence properties of highly p＋-doped GaASl_ySby are investigated. Band gap narrowing （BGN） effect is considered for heavily doped GaAs1_ySby epilayers. Band-gap Eg（GaAsl_ySby）=l.25y2-1.95y＋1.519 is obtained through fitting band-gap energy obtained by PL spectra from 35 to 300 K. Fermi level （El） and full width at half maximum （FWHM） of photolumines- cence increase with antimony mole fraction. The increase of Fermi level is attributed to hole mass of GaAsl_ySby decrease which is resulted from antimony composition increase. The increase of Fermi level means that more electrons participate in in- direct transition to result in FWHM increases.

关键词： molecular beam epitaxy photoluminescence semiconducting III-V materials

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