作者：
Miao YuMin HuangJian ZhuNanjing University
School of Electronic Science and Engineering Nanjing Electronic Devices Institute Nanjing China Nanjing Electronic Devices Institute
Nanjing China Nanjing University
School of Electronic Science and Engineering Nanjing Electronic Devices Institute Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China
simplified evaluation methods for the analysis on the thermal and hydraulic properties of the silicon microfluidic interposer for GaN power device cooling are proposed in this work. The microjet-microchannel hybrid st...
simplified evaluation methods for the analysis on the thermal and hydraulic properties of the silicon microfluidic interposer for GaN power device cooling are proposed in this work. The microjet-microchannel hybrid structure and the parallel microchannel structure are analyzed and compared based on the theoretical and empirical equations. It is depicted that water realizes the best cooling performance among the common coolants driven by the identical pressure in the parallel microchannel structure. The convective heat transfer thermal resistance and heat transfer coefficient of the microjet-microchannel hybrid structure exhibit 22.4 % decrease and 2.24 times enhancement in comparison to the parallel microchannel structure on the conditions of the identical pressure and volume flow rate, respectively.
This paper presents a two-stage tunable active polyphase filter (PPF) to achieve quadrature signals on 0.7-m InP DHBT technology. The transconductance of transistors and junction capacitance between bases and collecto...
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The cooling capability of the silicon interposers (SIs) with microjet and microchannel cooling for GaN device has been validated by practical implementations and characterized by numerical analysis in this work. A 5.3...
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monolithic integration has been demonstrated to be an ideal solution to minimize the parasitics in GaN power IC. Nonetheless, the current commercially GaN process for power IC is far less mature and only n-type HEMTs ...
monolithic integration has been demonstrated to be an ideal solution to minimize the parasitics in GaN power IC. Nonetheless, the current commercially GaN process for power IC is far less mature and only n-type HEMTs are available. Therefore, it is difficult for high voltage level shifters to achieve high speed. This work implements a level shifter for GaN IC to achieve both small response time and high $\mathrm{d}V_{\mathrm{S}}/\text{dt}$ noise immunity without complicated signal processing circuits, thus delay and conduction loss will be minimized. The proposed circuit was fabricated in a $1\mu\mathrm{m}$ GaN-on-Silicon process and measured results were performed to verify the characteristics.
GaAs terahertz schottky barrier diode SBD has been a major technology in terahertz wave multiplexing, mixing and direct detection for decades, due to its high mobility and low capacity. In this paper, T-Anode GaAs ter...
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This paper presents system design of an ultra-high speed continuous-time (CT) Sigma-Delta $(\Sigma\Delta)$ modulator in MATLAB/SIMULINK. With the help of Toolbox, zero-pole analysis and parameter optimization were c...
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ISBN:
(纸本)9781665482271
This paper presents system design of an ultra-high speed continuous-time (CT) Sigma-Delta $(\Sigma\Delta)$ modulator in MATLAB/SIMULINK. With the help of Toolbox, zero-pole analysis and parameter optimization were carried out for the modulator, followed by the behavior-level simulation of the ideal modulator system. Based on this, the non-ideal factors, including: gain-bandwidth (GBW), clock-jitter, RC-tolerance and excess-loop-delay, are modeled and simulated in the modulator system. The simulation results show that the modulator is suitable for a CT $\Sigma\Delta$ ADC with resolution of 7 -bit, sampling frequency of 10GS/s and signal bandwidth is larger than 300MHz, also lay a foundation for the subsequent circuit design.
A novel hybrid gate p-GaN power high-electron mobility transistor (Hyb-HEMT) technology is proposed in this work to effectively enhance threshold voltage (Vth) stability without significant gate leakage current (Igss)...
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A novel hybrid gate p-GaN power high-electron mobility transistor (Hyb-HEMT) technology is proposed in this work to effectively enhance threshold voltage (Vth) stability without significant gate leakage current (Igss) degradation. In this device concept, gate structure consists of spaced ohmic-type p-GaN metal dots and Schottky-type p-GaN metal. Charge storage effect can be alleviated through a free-carrier “discharge path” induced by ohmic-type p-GaN region, thus enhancing the Vth stability. The surrounding geometry distribution of Schottky-type p-GaN metal can take full advantage of depletion region, ensuring a relatively low Igss. It is experimentally demonstrated that hybrid gate structure can successfully suppress Vth shift within only 0.03V under 1200s DC drain/gate bias stress and the activation energy (EA) of proposed Hyb-HEMT is only 0.59eV, which indicates Hyb-HEMT owns shallower traps, leading to easier discharge of the induced stored charges. Meanwhile, experimental results and the mix-mode simulation prove that no carrier injection or trapping effect occurs in p-GaN layer after repetitive reverse freewheeling stress for the Hyb-HEMT device. IEEE
In this paper, a passive double-balanced mixer operating at 14-22GHz is designed based on the $0.15_{5}\mathrm{m}$ pHEMT GaAs process provided by WIN Semiconductor. The RF/LO frequency of the mixer is 14GHz-22GHz, a...
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ISBN:
(纸本)9781665482271
In this paper, a passive double-balanced mixer operating at 14-22GHz is designed based on the $0.15_{5}\mathrm{m}$ pHEMT GaAs process provided by WIN Semiconductor. The RF/LO frequency of the mixer is 14GHz-22GHz, and the IF frequency range is DC-4GHz. The ring-shaped mixing ring is composed of four MOS transistors connected with drain and source, and the RF and LO ports are spiral Marchand balun. The simulation results show that when the LO power is 13dBm, the frequency conversion loss is about 10dB, the isolation of LO/RF port and LO/IF port are both greater than 30dB, and that of RF/IF port is greater than 20dB. Chip size is $1.5 \text{mm}\times 0.9\text{mm}$ .
A gallium nitride(GaN)power amplifier monolithic microwave integrated circuit(MMIC)with a wide band and high efficiency in the microwave frequency band is proposed in this *** power amplifier MMIC uses a 0.15^im GaN h...
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A gallium nitride(GaN)power amplifier monolithic microwave integrated circuit(MMIC)with a wide band and high efficiency in the microwave frequency band is proposed in this *** power amplifier MMIC uses a 0.15^im GaN high electron mo-bility transistor(HEMT)*** operating frequency band of the amplifier can cover the whole K-band,i.e.,17-26.5 GHz.
In this work, vertical NiO/Ga2O3 heterojunction diodes (HJDs) have been demonstrated with the integrated SiNx/Al2O3 double-layered insulating field plate (FP) structure. With the optimal post annealing, the device per...
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In this work, vertical NiO/Ga2O3 heterojunction diodes (HJDs) have been demonstrated with the integrated SiNx/Al2O3 double-layered insulating field plate (FP) structure. With the optimal post annealing, the device performance has been improved with a decreased differential specific on-resistance (Ron,sp), a decreased reverse leakage current density and the elimination of double barrier behavior in forward bias condition, which is due to the reduced interface defects produced by the plasma damage of fabricated process. Our work provides an optimized way for the heterojunction devices based on Ga2O3 material to solve the difficulty of p-type Ga2O3.
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