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2018 IEEE MTT-S International Wireless Symposium, IWS 2018

作者： Guo, Runnan Tao, Hongqi Zhang, Bin Nanjing Electronic Devices Institute Nanjing210016 China Science and Technology on Monolithic Integrated and Modules Laboratory Nanjing210016 China

ISBN: (纸本)9781538663462

A 26 GHz Doherty power amplifier MMIC and a fully integrated 2×2 PA array based on the DPA are presented in this paper. The Doherty power amplifier using 0.15μm GaN HEMT technology, achieves maximum small signal gain of 13.6 dB and saturated output power of over 32 dBm in 24-28 GHz, with peak PAE of 21.7%, and 6 dB back-off PAE of 20% at 26 GHz. The 2×2 power MMIC consists of 4 symmetric proposed Doherty PAs with signal interconnections on the backside and specialized optimizations of layouts for 3D heterogeneous integration technology, which is suitable for 5G Massive MIMO applications. The chip size of single Doherty power amplifier and monolithic power amplifier array are 2.5 × 2.0 mm2 and 5.0 × 5.0 mm2 respectively. © 2018 IEEE.

关键词： monolithic microwave integrated circuits

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A 42 to 56GHz wide band CMOS power amplifier

A 42 to 56GHz wide band CMOS power amplifier

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2013 6th UK, Europe, China Millimeter Waves and THz technology Workshop, UCMMT 2013

作者： Yan, Pinpin Chen, Jixin Hong, Wei Jiang, Xin State Key Laboratory of Millimeter Waves School of Information Science and Engineering Southeast University Nanjing 210096 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing 210016 China

A wide band power amplifier is designed by using 90nm CMOS process. By proper arrangement of frequency response among circuit stages, the amplifier exhibit maximum gain of 15dB at 47-48GHz and 3dB bandwidth from 42 to... 详细信息

ISBN: (纸本)9781479909810

关键词： Power amplifiers

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Reliable and broad-range layer identification of Au-assisted exfoliated large area MoS_(2)and WS_(2)using reflection spectroscopic fingerprints

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Nano Research 2022年第9期15卷 8470-8478页

作者： Bo Zou Yu Zhou Yan Zhou Yanyan Wu Yang He Xiaonan Wang Jinfeng Yang Lianghui Zhang Yuxiang Chen Shi Zhou Huaixin Guo Huarui Sun School of Science and Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information System Harbin Institute of Technology ShenzhenShenzhen 518055China Collaborative Innovation Center of Extreme OpticsShanxi UniversityTaiyuan 030006China State Key Laboratory of Superlattices and Microstructures Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China University of Science and Technology of China Hefei 230026China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices InstituteNanjing 210016China

The emerging Au-assisted exfoliation technique enables the production of a wealth of large-area and high-quality ultrathin two dimensional(2D)***,damage-free,and reliable determination of the layer number of such 2D films can greatly promote layer-dependent physical studies and device ***,an optical method has been developed for simple,high throughput,and accurate determination of the layer number for Au-assisted exfoliated MoS_(2)and WS_(2)films in a broad thickness *** method is based on quantitative analysis of layer-dependent white light reflection spectra(WLRS),revealing that the intensity of exciton-induced reflection peaks can be used as a clear indicator for identifying the layer *** simple yet robust method will facilitate fundamental studies on layer-dependent optical,electrical,and thermal properties and device applications of 2D *** technique can also be readily combined with photoluminescence(PL)and Raman spectroscopies to study other layer-dependent physical properties of 2D materials.

关键词： Au-assisted exfoliation MoS_(2)and WS_(2) layer identification white light reflection spectra excitonic peaks

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Current Gain Increase by SiN_x Passivation in InGaAs/InP Double Heterostructure Bipolar Transistors

Current Gain Increase by SiN_x Passivation in InGaAs/InP Dou...

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IEEE International Conference on Communication Problem-Solving

作者： Junling Xie Wei Cheng Yuan Wang Bin Niu Long Chang Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

ISBN: (纸本)9781467365451

Passivation of InGaAs/InP double heterostructure bipolar transistors (DHBTs) with room temperature SiN_x deposition was investigated. Due to reduction of surface damages during SiN_x deposition, current gain improvement was observed at low bias voltage region. According to our analysis, a drastic decrease of surface recombination related current component at base-emitter junction occurred after passivation, which is crucial for improving the device reliability.

关键词： InP Heterostructure bipolar transistor Silicon nitride Passivation

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InGaAs/InP double heterojunction bipolar transistors with fmax=532GHz

InGaAs/InP double heterojunction bipolar transistors with fm...

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IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IEEE MTT-S IMWS-AMP 2015

作者： Wei, Cheng Yuan, Wang Bin, Niu Zi-Li, Xie Jun-Ling, Xie Hai-Yan, Lu Yan, Zhao Yan, Sun Tang-Sheng, Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China Key Laboratory of Advanced Photonic and Electronic Materials Department of Physics Nanjing University Nanjing210093 China

ISBN: (纸本)9781479964505

An InGaAs/InP DHBT with InGaAsP composite collector is designed and fabricated using triple mesa structure and planarization technology. All processes are on 3-inch wafers. The DHBT with emitter area of 0.5×5μm2 exhibits a current cutoff frequency ft=350GHz and a maximum oscillation frequency fmax=532GHz which is to our knowledge the highest BVCEO ever reported for InGaAs/InP DHBTs in China. The breakdown voltage is 4.8V. The high speed InGaAs/InP DHBTs with high breakdown voltage are promising for voltage controlled oscillator (VCO) and mixer applications at THz span. © 2015 IEEE.

关键词： Indium phosphide

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Design of a novel S-band broadband CW self-biased GaN power amplifier for communication 2021

Design of a novel S-band broadband CW self-biased GaN power ...

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9th International Conference on Communications and Broadband Networking, ICCBN 2021

作者： Zhang, Luchuan Zhong, Shichang Chen, Yue Tang, Shijun Sun, Chunmei Southeast University Department of Electronic Science and Engineering Nanjing Electronic Devices Institute National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute China

ISBN: (纸本)9781450389174

In this paper, a S-band broadband internally matched power amplifier is designed based on GaN HEMT using internal-matching method in input and output respectively. A single-power-supplied self-biased structure is adopted to provide instantaneous protection. Test results show that the output power is more than 20W with the power gain of over 15dB and power added efficiency over 58% at the condition of Vds=32V, continuous wave from 2.2GHz to 2.6GHz. © 2021 ACM.

关键词： Power amplifiers

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Transient simulation for the thermal design optimization of pulse operated AlGaN/GaN HEMTs

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Micromachines 2020年第1期11卷 76-76页

作者： Guo, Huaixin Chen, Tangsheng Shi, Shang Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China

The thermal management and channel temperature evaluation of GaN power amplifiers are indispensable issues in engineering field. The transient thermal characteristics of pulse operated AlGaN/GaN high electron mobility transistors (HEMT) used in high power amplifiers are systematically investigated by using three-dimensional simulation with the finite element method. To improve the calculation accuracy, the nonlinear thermal conductivities and near-junction region of GaN chip are considered and treated appropriately in our numerical analysis. The periodic transient pulses temperature and temperature distribution are analyzed to estimate thermal response when GaN amplifiers are operating in pulsed mode with kilowatt-level power, and the relationships between channel temperatures and pulse width, gate structures, and power density of GaN device are analyzed. Results indicate that the maximal channel temperature and thermal impedance of device are considerably influenced by pulse width and power density effects, but the changes of gate fingers and gate width have no effect on channel temperature when the total gate width and active area are kept constant. Finally, the transient thermal response of GaN amplifier is measured using IR thermal photogrammetry, and the correctness and validation of the simulation model is verified. The study of transient simulation is demonstrated necessary for optimal designs of pulse-operated AlGaN/GaN HEMTs. © 2020 by the authors.

关键词： Gallium nitride

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Study on 2000V SiC JBS Diodes

Study on 2000V SiC JBS Diodes

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2013 3rd International Conference on Electric and Electronics(EEIC 2013)

作者： Gang Chen Lin Wang Runhua Huang Song Bai Yun Li Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

High voltage 4H-SiC Ti schottky junction barrier schottky（JBS） diode with breakdown voltage of 2000 V and forward current of 2A has been fabricated. A low reverse leakage current below 1.9×10A/cm at the bias voltage of-2kV has been obtained. The forward on-state current was 2A at V = 1.9V and 5A at VF = 3V. The chip is 2.3mm×2.3mm. The turn-on voltage is about 1.0V. The on-state resistance is 19.3m?·cm. The doping and thickness of the N-type drift layer and the device structure have been performed by numerical simulations. The SiC JBS devices have been fabricated and the processes were in detail. The die was packaged with SMB mode. The thickness of the Nepilayer is 17μm, and the doping concentration is 4.6×10cm. A floating guard rings edge termination have been used to improve the effectiveness of the edge termination technique. By using Ti/Ni/Ag multilayer metal structure, the double side Ag process of 4H-SiC JBS diode is formed. We use the PECVD SiN/SiO as the passivation dielectric and a non photosensitive polyamide as the passivation in the end.

关键词： 4H-SiC JBS Floating guard rings

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Common base four-finger InGaAs/InP DHBT with 535 GHz fmax

Common base four-finger InGaAs/InP DHBT with 535 GHz fmax

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IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IEEE MTT-S IMWS-AMP 2015

作者： Bin, Niu Wei, Cheng Yuan, Wang Zi-Li, Xie Jun-Ling, Xie Hai-Yan, Lu Yan, Sun Tang-Sheng, Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China Key Laboratory of Advanced Photonic and Electronic Materials Department of Physics Nanjing University Nanjing210093 China

ISBN: (纸本)9781479964505

A common base four-finger InGaAs/InP DHBT with 535 GHz fmax using 0.5μm emitter technology is fabricated. Multi-finger design was used to increase input current. Common base configuration was compared with common emitter configuration, and demonstrated a smaller K factor at high frequency span, indicating a larger MSG/MAG breakpoint frequency and thus a higher gain when frequency reaches MAG region of common emitter devices. © 2015 IEEE.

关键词： Indium phosphide

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Bright photon-pair source based on a silicon dual-Mach-Zehnder microring

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science China(Physics,Mechanics & Astronomy) 2020年第2期63卷 3-6页

作者： Chao Wu YingWen Liu XiaoWen Gu XinXin Yu YueChan Kong Yang Wang XiaoGang Qiang JunJie Wu ZhiHong Zhu XueJun Yang Ping Xu Institute for Quantum Information and State Key Laboratory of High Performance Computing College of ComputerCollege of Advanced Interdisciplinary StudiesNational University of Defense TechnologyChangsha 410073China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices InstituteNanjing 210016China National Laboratory of Solid State Microstructures and School of Physics Nanjing UniversityNanjing 210093China

Single photons and photon pairs are typically generated by spontaneous parametric down conversion or quantum dots;however,spontaneous four-wave mixing(SFWM)in silicon microring resonators[1]is also an appealing source of entangled photons,offering a strong cavity-enhanced nonlinear interactions while maintaining features,such as compact,simple to fabricate,and allowing for thermal ***,silicon ring-resonators usually suffer from a trade-off between providing a high pair generation rate(PGR)and high extraction *** achieve high PGR,devices are generally operated with the signal and idler photons in the undercoupling regime and pump photons at the critical coupling point,while high extraction rates require the converted photons to be ***,the optimal conditions for achieving maximal output photon pair flux are critical coupling for the pump photons and overcoupling for the converted photons[2,3].

关键词： coupling photon converted

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