In view of the threat of the anti-missile defense system, this paper summarized the maneuver penetration strategies of the UAV in the level flight phase, in consideration of the flight ability and technological develo...
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In order to improve the ability of unmanned aerial vehicle(UAV) cluster collaborative search and obstacle avoidance, a multi-UAV collaborative search method based on dynamic parameter adjustment is proposed. Firstly, ...
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Cooperative mission for Multi UAVs has become an important trend. Cooperative path planning is one of the most killing part for the issue. The algorithms can be divided into the following categories, including optimal...
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In order to solve the problem of multi-aircraft cluster cooperative combat, this paper tries to classify and sum up the existing achievements on task assignment method and cooperative positioning and navigation. Among...
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A collaborative search planning method based on an information map is proposed for the problem of multi-moving target detection in gray areas using a heterogeneous UAV swarm. This method takes into account the detecti...
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This article provides a review of formation control for multiple aircrafts. Firstly, several commonly used aircraft formation control methods were introduced, including leader-follower approach, behavior based formati...
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In order to solve the long-term drift of positioning in UAVs, we propose a multi-scale visual feature association algorithm, and applied in SLAM systems. Through the upward fusion mechanism, we fuse the image features...
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Flight trajectory optimization is a crucial aspect of aircraft design, and the numerical algorithms for trajectory optimization have always been a hot and challenging topic in domestic and international research. Star...
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This article focuses on the application of generative artificial intelligence technology in unmanned aircraft systems. In detail, it elaborates on the application scenarios of GPT in aircraft design, development and p...
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SiGe materials have become a research hotspot due to their important applications in semiconductor devices, especially in optoelectronic and high-speed electronic devices. In this study, based on molecular dynamics si...
SiGe materials have become a research hotspot due to their important applications in semiconductor devices, especially in optoelectronic and high-speed electronic devices. In this study, based on molecular dynamics simulations, the influence of the Si buffer layer on the quality of films in Ge/Si/SiGe heterostructures is investigated. By simulating the growth process of the Ge/Si/SiGe heterostructure, a deposition model based on Ge(100) substrates is established. Inspired by the concept of reverse gradient buffer layers, Si buffer layers are directly grown on Ge substrates, followed by the deposition of SiGe films. This study primarily investigates the effects of the growth temperature and deposition thickness of the Si buffer layer on the quality of SiGe films. Based on the deposition parameters identified as suitable under the current simulation conditions (620 °C, 9.7 nm), the influence of the buffer layer on SiGe films with varying Ge compositions is further analyzed. The results show that the dislocations and stacking faults formed in the Si buffer layer effectively relieve the stress caused by lattice mismatch, thus improving the crystal quality of the subsequent SiGe films. This study provides theoretical insights into the Ge/Si/SiGe heterostructure film growth process, which helps enhance the quality of SiGe films and expands their applications in semiconductor devices.
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