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A Macro-Mechanical Study for Capturing the Dynamic Behaviors of a Rate-Dependent Elastomer and Clarifying the Energy Dissipation Mechanisms at Various St rain Rates

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Acta Mechanica Solida Sinica 2022年第2期35卷 228-238页

作者： Shahzad Fateh Ali Jitang Fan Jianqing Feng Xiangquan Wei State Key Laboratory of Explosion Science and Technology Beijing Institute of TechnologyBeijing 100081China Aerospace System Engineering shanghai Shanghai 201109China

A strain-rate-sensitive polyurethane elastomer is numerically investigated to reveal improved impact characteristics and analyze the concerned rate dependencies and dynamic energy dissipation features.A physical constitutive model in view of amorphous molecular struc-ture of the elastomer is proposed by relating the macro-mechanical behaviors to micro-structural changes through molecular transitions and flow *** distinct relaxation processes are considered because of entangled molecular net works,with each possessing a unique activation *** calibration with experimental data,finite element simulations based on the model are *** to the loading rate,the structural entropy of molecular chain entanglements,rate-dependent yielding,plateau flow and densification are well predicted by the *** investigations are extended further regarding the material recoverability and accordingly,strain energy absorptions are illustrated.A power law function is proposed for designing the energy absorption relation to the applied loading ***,the inherent mechanisms causing the dynamic energy absorptions are analyzed with notable clarifications of post-experimental observations obtained via scanning elec Iron microscopy.

关键词： Elastomer Constitutive model Energy absorption Ratedependent Scanning electron microscopy

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A Snapshot Cluster Segmentation Method Based on Dynamic Network

A Snapshot Cluster Segmentation Method Based on Dynamic Netw...

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2022 International Conference on Statistics, Data science, and Computational Intelligence, CSDSCI 2022

作者： Zhang, Tongxin Lu, Luxi College of Information System Engineering PLA Strategic Support Force Information Engineering University Zhengzhou China National Key Laboratory of Science and Technology on Blind Signal Processing Chengdu China

ISBN: (纸本)9781510661325

Dynamic graph neural networks are a research hotspot in the field of deep learning, especially in social networks, recommendation systems, traffic networks and other fields with very wide applications. At present, most of the commonly used deep learning based network analysis methods are focused on discrete dynamic graph neural networks. However, the effectiveness of discrete graph neural network methods is based on the degree of good or bad snapshot segmentation of dynamic networks, so this paper proposes a snapshot clustering segmentation method (SCSM) for dynamic networks, and researchers can effectively segment the snapshots of dynamic networks by the SCSM method in this paper to make the downstream tasks can get good results. © 2023 SPIE.

关键词： Graph neural networks

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Improving Smart Contract Security with Contrastive Learning-Based Vulnerability Detection 24

Improving Smart Contract Security with Contrastive Learning-...

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44th ACM/IEEE International Conference on Software engineering, ICSE 2024

作者： Chen, Yizhou Sun, Zeyu Gong, Zhihao Hao, Dan Moe Beijing China Institute of Software Chinese Academy of Sciences Science & Technology on Integrated Information System Laboratory Beijing China

ISBN: (纸本)9798400702174

Currently, smart contract vulnerabilities (SCVs) have emerged as a major factor threatening the transaction security of blockchain. Existing state-of-the-art methods rely on deep learning to mitigate this threat. They treat each input contract as an independent entity and feed it into a deep learning model to learn vulnerability patterns by fitting vulnerability labels. It is a pity that they disregard the correlation between contracts, failing to consider the commonalities between contracts of the same type and the differences among contracts of different types. As a result, the performance of these methods falls short of the desired level. To tackle this problem, we propose a novel Contrastive Learning Enhanced Automated Recognition Approach for Smart Contract Vulnerabilities, named Clear. In particular, Clear employs a con-trastive learning (CL) model to capture the fine-grained correlation information among contracts and generates correlation labels based on the relationships between contracts to guide the training pro-cess of the CL model. Finally, it combines the correlation and the semantic information of the contract to detect SCVs. Through an empirical evaluation of a large-scale real-world dataset of over 40K smart contracts and compare 13 state-of-the-art baseline methods. We show that Clear achieves (1) optimal performance over all base-line methods;(2) 9.73%-39.99% higher F1-score than existing deep learning methods. © 2024 ACM.

关键词： Smart contract

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High-temperature oxidation resistance of Si-coated C/SiC composites

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Rare Metals 2024年第9期43卷 4566-4572页

作者： Jie Xiao Hua-Yue Zhang Sheng-Kai Gong Hui-Bin Xu Hong-Bo Guo School of Materials Science and Engineering Beihang UniversityBeijing 100191China Key Laboratory of High-Temperature Structure Materials and Protective Coatings(Ministry of Industry and Information Technology) Beihang UniversityBeijing 100191China

In this paper,Si coatings were sprayed onto C/SiC composite substrates by atmospheric plasma spraying(APS).The high-temperature oxidation behavior of the substrate and coating at temperatures of 1100 and 1300℃was also *** C/SiC ceramic matrix composite will be damaged seriously and even failed due to the oxidation of carbon fibers in *** Si coating effectively improved the oxidation resistance of the C/SiC substrate in the high-temperature oxidation *** effect of the thickness of the Si coatings on the oxidation resistance was *** 150-μm coating is proved to enable the substrate to have the lowest oxidation weight loss and the best oxidation resistance after static oxidation for 5 h.

关键词： Ceramic matrix composites(CMCs) Carbon fiber Si coating Oxidation Plasma spray

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Decoupling the nonthermal effect of current by electrically assisted crystal plasticity modeling of Ni-based single crystal superalloys

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Journal of Materials science & technology 2025年第1期204卷 91-103页

作者： Jia Gao Hongwei Li Xin Zhang Guangda Shao Zhiyu Xiang Xinxin Sun State Key Laboratory of Solidification Processing School of Materials Science and EngineeringNorthwestern Polytechnical UniversityXi’an 710072China Shaanxi Key Laboratory of High-performance Precision Forming Technology and Equipment Northwestern Polytechnical UniversityXi’an 710072China School of Mechanical and Electrical Engineering Northwestern Polytechnical UniversityXi’an 710072China Ministry of Industry and Information Technology Key Laboratory of Aeroengine Technology Northwestern Polytechnical UniversityXi’an 710072China

The electrically assisted(EA)deformation process has received considerable attention in recent years,ac-companied by research on current-induced deformation ***,there are still challenges in eliminating thermal effects,which have prevented a comprehensive understanding of the underlying current-induced *** for a single crystal(SC)in research provides advantages in decou-pling the nonthermal effect of electric current at smaller scales and eliminating the complex interactions that exist in polycrystalline ***,the innovation of this work lies in decoupling the non-thermal effect of electric current and conducting a comprehensive analysis of anisotropic deformation and mechanisms within a Ni-based SC with different crystallographic axes and various current directions dur-ing electrically assisted tensile simulation.A significant tension axis direction in the SC during EA tension was induced by the combination of a higher current direction factor(|cosθ|)and a dimensionless factor for the current density(|J^(α)/J_(0)^(α)|)along the[100]*** stress drop within the SC due to the nonthermal effect of electric current generally increased with increasing current *** was attributed to the increased dislocation density differences and decreased *** increased stress anisotropy of the SC at a current direction of 45°was attributed to fewer activated(111)slip systems and the pinning effect of more dislocations within these *** study advances our understanding of the thermal and nonthermal effects of electric current and offers valuable insights for the informed application of EA deformations in industrial and aerospace settings with SC superalloys.

关键词： Electrically assisted(EA)tension Single crystal superalloys Nonthermal effect Anisotropy Tension axis Current direction

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Optimizing Structural Modification Operation for B+-Tree on Byte-Addressable Devices 42

Optimizing Structural Modification Operation for B+-Tree on ...

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42nd IEEE International Conference on Computer Design, ICCD 2024

作者： Hong, Dingze Hu, Jinlei Chen, Jianxi Feng, Dan Liu, Jian School of Computer Science and Technology Huazhong University of Science and Technology Wuhan National Laboratory for Optoelectronics Key Laboratory of Information Storage System of MoE China The Fifth Electronics Research Institute of Miit China

ISBN: (纸本)9798350380408

Persistent Memory (PM) offers both byte-address ability and non-volatility, making it well-suited for accelerating B+-Tree indexes. However, existing persistent B+-Tree indexes face significant performance challenges due to high structural modification operation (SMO) overhead. SMOs often result in costly item migrations and increased tail latency, which severely degrade the overall performance. In this paper, we present SSTree, a high-performance B+- Tree index specifically optimized to address SMO overhead. SSTree introduces three key innovations: (i) efficient leaf node expansion using a list of subnodes to postpone expensive node splits, (ii) delegated fingerprints to speed up search operations across subnodes, and (iii) proactive subnode compaction that employs out-of-place updates to optimize item organization. Our evaluation demonstrates that SSTree delivers up to 4.38× higher write throughput and up to 62× lower tail latency compared to state-of-the-art persistent B+-Tree indexes. © 2024 IEEE.

关键词： Trees (mathematics)

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REQUIRED NUMBER OF ITERATIONS FOR SPARSE SIGNAL RECOVERY VIA ORTHOGONAL LEAST SQUARES

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Journal of Computational Mathematics 2023年第1期41卷 1-17页

作者： Haifeng Li Jing Zhang Jinming Wen Dongfang Li Henan Engineering Laboratory for Big Data Statistical Analysis and Optimal Control College of Mathematics and Information ScienceHenan Normal UniversityXinxiang 453007China College of Information Science and Technology Jinan UniversityGuangzhou 510632China School of Mathematics and Statistics Huazhong University of Science and TechnologyWuhan 430074China Hubei Key Laboratory of Engineering Modeling and Scientific Computing Huazhong University of Science and TechnologyWuhan 430074China

In countless applications,we need to reconstruct a K-sparse signal x∈R n from noisy measurements y=Φx+v,whereΦ∈R^(m×n)is a sensing matrix and v∈R m is a noise *** least squares(OLS),which selects at each step the column that results in the most significant decrease in the residual power,is one of the most popular sparse recovery *** this paper,we investigate the number of iterations required for recovering x with the OLS *** show that OLS provides a stable reconstruction of all K-sparse signals x in[2.8K]iterations provided thatΦsatisfies the restricted isometry property(RIP).Our result provides a better recovery bound and fewer number of required iterations than those proposed by Foucart in 2013.

关键词： Sparse signal recovery Orthogonal least squares(OLS) Restricted isometry property(RIP)

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Activation Distance and Capacity Analysis for Ambient Backscatter Communications with Sensitivity Constraint and Beamforming

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China Communications 2024年第11期21卷 257-266页

作者： Mu Yunping Fan Dian Wang Gongpu Xu Yongjun Kuang Lei Engineering Research Center of Network Management Technology for High Speed Railway of Ministry of Education School of Computer and Information TechnologyBeijing Jiaotong UniversityBeijing 100044China China Academy of Information and Communications Technology Beijing 100191China School of Communication and Information Engineering Chongqing University of Posts and TelemcommunicationsChongqing 400065China Shanghai Key Laboratory of Multidimensional Information Processing Engineering Center of SHMEC for Space Information and GNSSSchool of Information Science and TechnologyEast China Normal UniversityShanghai 200241China

Circuit sensitivity of sensors or tags without battery is one practical constraint for ambient backscatter communication *** letter considers using beamforming to reduce the sensitivity constraint and evaluates the corresponding performance in terms of the tag activation distance and the system ***,we derive the activation probabilities of the tag in the case of single-antenna and multi-antenna ***,we obtain the capacity expressions for the ambient backscatter communication system with beamforming and illustrate the power allocation that maximizes the system capacity when the tag is ***,simulation results are provided to corroborate our proposed studies.

关键词： activation distance ambient backscatter communications beamforming channel capacity power allocation sensitivity

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Epitaxial growth of 2D gallium selenide flakes for strong nonlinear optical response and visible-light photodetection

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Frontiers of physics 2023年第5期18卷 237-244页

作者： Mengting Song Nan An Yuke Zou Yue Zhang Wenjuan Huang Huayi Hou Xiangbai Chen Hubei Key Laboratory of Optical Information and Pattern Recognition Wuhan Institute of TechnologyWuhan 430205China State Key Laboratory of Materials Processing and Die&Mould Technology School of Materials Science and EngineeringHuazhong University of Science and TechnologyWuhan 430074China

As an emerging groupⅢ–Ⅵsemiconductor two-dimensional(2D)material,gallium selenide(GaSe)has attracted much attention due to its excellent optical and electrical *** this work,high-quality epitaxial growth of few-layer GaSe nanoflakes with different thickness is achieved via chemical vapor deposition(CVD)*** to the non-centrosymmetric structure,the grown GaSe nanoflakes exhibits excellent second harmonic generation(SHG).In addition,the constructed GaSe nanoflake-based photodetector exhibits stable and fast response under visible light excitation,with a rise time of 6 ms and decay time of 10 *** achievements clearly demonstrate the possibility of using GaSe nanoflake in the applications of nonlinear optics and(opto)-electronics.

关键词： 2D materials gallium selenide second harmonic generation chemical vapor deposition photodetector

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A Valuable and Low-Budget Process Scheme of Equivalized 1 nm technology Node Based on 2D Materials

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Nano-Micro Letters 2025年第08期 302-313页

作者： Yang Shen Zhejia Zhang Zhujun Yao Mengge Jin Jintian Gao Yuhan Zhao Wenzhong Bao Yabin Sun He Tian College of Integrated Circuit Science and Engineering Shanghai Key Laboratory of Multidimensional Information ProcessingEast China Normal University State Key Laboratory of ASIC and System School of MicroelectronicsFudan University Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist) Tsinghua University Shaoxin Laboratory

Emerging two-dimensional（2D） semiconductors are among the most promising materials for ultra-scaled transistors due to their intrinsic atomic-level thickness. As the stacking process advances, the complexity and cost of nanosheet field-effect transistors（NSFETs） and complementary FET（CFET） continue to rise. The 1 nm technology node is going to be based on Si-CFET process according to international roadmap for devices and systems（IRDS）(2022, https://irds. ieee. org/), but not publicly confirmed, indicating that more possibilities still exist. The miniaturization advantage of 2D semiconductors motivates us to explore their potential for reducing process costs while matching the performance of next-generation nodes in terms of area, power consumption and speed. In this study, a comprehensive framework is built. A set of MoS2NSFETs were designed and fabricated to extract the key parameters and performances. And then for benchmarking, the sizes of 2D-NSFET are scaled to a extent that both of the Si-CFET and 2D-NSFET have the same average device footprint. Under these conditions, the frequency of ultra-scaled 2D-NSFET is found to improve by 36% at a fixed power consumption. This work verifies the feasibility of replacing silicon-based CFETs of 1 nm node with 2D-NSFETs and proposes a 2D technology solution for 1 nm nodes, i.e., “2D eq 1 nm” nodes. At the same time, thanks to the lower characteristic length of 2D semiconductors, the miniaturized 2D-NSFET achieves a 28% frequency increase at a fixed power consumption. Further, developing a standard cell library, these devices obtain a similar trend in 16-bit RISC-V CPUs. This work quantifies and highlights the advantages of 2D semiconductors in advanced nodes, offering new possibilities for the application of 2D semiconductors in high-speed and low-power integrated circuits.

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