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2013 International Conference on Precision Mechanical Instruments and Measurement technology, ICPMIMT 2013

作者： Zhao, Yan Cheng, Wei Wang, Yuan Gao, Han Chao Lu, Hai Yan Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China

ISBN: (纸本)9781629933405

A submicron InGaAs/InP DHBT fabricated using triple mesa structure and BCB planarization technology is presented. All processes are on 3-inch wafers. The DHBT with emitter area of 0.7×10μm2 exhibits a current cutoff frequency ft and a maximum oscillation frequency fmax both of 280GHz. The breakdown voltage is more than 4V. The high speed InGaAs/InP DHBT with comparable high breakdown voltage is promising for voltage controlled oscillator (VCO) and mixer applications at W band or even higher frequencies. © 2013 Trans Tech Publications Ltd, Switzerland.

关键词： Indium phosphide

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4.5kV SiC JBS diodes

4.5kV SiC JBS diodes

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2013 International Conference on Precision Mechanical Instruments and Measurement technology, ICPMIMT 2013

作者： Tao, Yong Hong Huang, Run Hua Chen, Gang Bai, Song Li, Yun Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing 210016 China

High voltage 4H-SiC junction barrier schottky (JBS) diode with breakdown voltage higher than 4.5 kV has been fabricated. The doping level and thickness of the N-type drift layer and the device structure have been performed by numerical simulations. The thickness of the device epilayer is 50 μm, and the doping concentration is 1.2×1015 cm-3. A floating guard rings edge termination has been used to improve the effectiveness of the edge termination technique. The diodes can block a reverse voltage of at least 4.5 kV, and the on-state current density was 80 A/cm2 at VF =4 V. © 2013 Trans Tech Publications Ltd, Switzerland.

关键词： Silicon carbide

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High breakdown voltage GaN HEMT device fabricated on self-standing GaN substrate

High breakdown voltage GaN HEMT device fabricated on self-st...

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2013 International Conference on Precision Mechanical Instruments and Measurement technology, ICPMIMT 2013

作者： Zhou, Jian Jun Li, Liang Lu, Hai Yan Kong, Ceng Kong, Yue Chan Chen, Tang Sheng Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing 210016 China

In this letter, a high breakdown voltage GaN HEMT device fabricated on semi-insulating self-standing GaN substrate is presented. High quality AlGaN/GaN epilayer was grown on self-standing GaN substrate by metal organic chemical vapor deposition. A 0.8μm gate length GaN HEMT device was fabricated with oxygen plasma treatment. By using oxygen plasma treatment, gate forward working voltage is increased, and a breakdown voltage of more than 170V is demonstrated. The measured maximum drain current of the device is larger than 700 mA/mm at 4V gate bias voltage. The maximum transconductance of the device is 162 mS/mm. In addition, high frequency performance of the GaN HEMT device is also obtained. The current gain cutoff frequency and power gain cutoff frequency are 19.7 GHz and 32.8 GHz, respectively. A high fT-LG product of 15.76 GHz&bullμm indicating that homoepitaxy technology is helpful to improve the frequency performance of the device. © 2013 Trans Tech Publications Ltd, Switzerland.

关键词： Aluminum gallium nitride

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Simulation, fabrication and characterization of 4500v 4H-SiC normallyoff VJFET

Simulation, fabrication and characterization of 4500v 4H-SiC...

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2013 International Conference on Precision Mechanical Instruments and Measurement technology, ICPMIMT 2013

作者： Huang, Run Hua Chen, Gang Bai, Song Li, Rui Li, Yun Tao, Yong Hong Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing Electronic Devices Institute Nanjing China

Simulation, Fabrication and characteristics of high voltage, normally-off JFETs in 4HSiC are presented. The devices were built on ND= 1.0×1015 cm-3 doped 50μm thick n-type epilayer grown on a n+ 4H-SiC. Parameters of edge termination have been optimized by simulations. Its blocking voltage exceeds 4500V at gate bias VG = -6V and forward drain current is in excess of 3A at gate bias VG = 3V and drain bias VD = 5V corresponding a current density of 80A/cm2. © 2013 Trans Tech Publications Ltd, Switzerland.

关键词： Silicon carbide

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Fabrication of L band 4H-SiC SiT devices

Fabrication of L band 4H-SiC SiT devices

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2013 International Conference on Precision Mechanical Instruments and Measurement technology, ICPMIMT 2013

作者： Chen, Gang Jiang, Hao Zhong, Shi Chang Bai, Song Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing 210016 China Nanjing Electronic Device Institute Nanjing 210016 China

Silicon carbide (SiC) static induction transistors (SITs) were fabricated using homegrown epi structures. The gate is a recessed gate - bottom contact (RG - B). The mesa space designed is 2.5 μm and the gate channel is 1.0 μm. The developed devices adopted a p-type Al ion implanted gate and power performance was improved by decreased leakage current and enhanced break-down voltage. The lift-off with assistant dielectric, dense gate recess etching, high temperature anneals and PECVD passivation process technologies are adopted. One cell has 200 source fingers and each source finger width is 50 μm. 0.5 mm SiC SIT yield a current density of 110 mA/mm at a drain voltage of 50 V. A maximum current density of 160 mA/mm was achieved with Vd = 80V, and the maximum transconductance is 40mS/mm. The device blocking voltage with a gate bias of -12 V was 400 V. Packaged 2 × 2-cm devices were evaluated using amplifier circuits designed for class AB operations. A total power output in excess of 70 W was obtained with a power density of 17.5 W/cm and gain of 5.5 dB at L band 1 GHz under pulse 100μs and cycle ratio 1% RF operation and 80V drain to source voltage. © 2013 Trans Tech Publications Ltd, Switzerland.

关键词： Drain current

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Study on transient thermal resistance of microwave pulse power device

Study on transient thermal resistance of microwave pulse pow...

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2013 International Conference on Precision Mechanical Instruments and Measurement technology, ICPMIMT 2013

作者： Ding, Xiao Ming Chen, Gang Wang, Dian Li Nanjing Electronic Device Institute Nanjing 210016 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing 210016 China

Wherever possible, we have adopted the newest modern technology. The Au-Si binary alloy sintered chips are silicon or silicon carbide power devices. The sintered temperature is 380 to 390°C. Using micro-infrared thermal image instrument, compares the microwave transient infrared thermal image test results of sample devices which chips welded process under two different process condition. Measured results show that the thermal resistance after chip welded process optimized is twenty percent smaller than before. It describes the importance of controlling the chip welded process parameters during assembly. © 2013 Trans Tech Publications Ltd, Switzerland.

关键词： Junction temperature

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Direct extraction method of InP HBT small-signal model

Direct extraction method of InP HBT small-signal model

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2013 International Conference on Precision Mechanical Instruments and Measurement technology, ICPMIMT 2013

作者： Lu, Hai Yan Cheng, Wei Chen, Gang Chen, Tang Sheng Chen, Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing 210016 China Nanjing Electronic Device Institute Nanjing 210016 China

An accurate method for extracting the elements of InP HBT small-signal model parameters is proposed in this paper. The method can accurately resolve the most important internal parameters from the measured S-parameters, and is not sensitive to the values of parasitic parameters. The initial values of the parasitic are extracted by using a set of test structure, and the intrinsic elements determined by using the analytical method are described as functions of the parasitic elements. The extraction procedure uses a set of closed-form expressions derived without any approximation. An experimental validation is carried out on three HBT devices and satisfactory results are obtained up to 20 GHz. © 2013 Trans Tech Publications Ltd, Switzerland.

关键词： Heterojunction bipolar transistors

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Improvement of low temperature GaN Interlayer on the property of the two-dimensional electron gas in AlGaN/GaN heterostructure

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Rengong Jingti Xuebao/Journal of Synthetic Crystals 2013年第7期42卷 1406-1409页

作者： Zhang, Dong-Guo Li, Zhong-Hui Peng, Da-Qing Dong, Xun Li, Liang Ni, Jin-Yu Science and Technology of Monolithic Integrated and Modules Circuits Laboratory Nanjing Electronic Devices Institute Nanjing 210016 China

The AlGaN/GaN two-dimensional electron gas material on sapphire substrate was grown by low-pressure MOCVD method, and the influence of the 2DEG transport property from the low-temperature GaN layer which was inserted in the GaN growth was investigated. Properties of the samples were studied by AFM and Hall measurement. The results indicated that the LT-GaN interlayer could improve the roughness of the surface, and obviously raise the electron mobility in the 2DEG. Hall measurement revealed that the mobility of 2110 cm2/V·s at room temperature could be achieved when the growth temperature of LT-GaN was 860°C.

关键词： III-V semiconductors

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A 42 to 56GHz wide band CMOS power amplifier

A 42 to 56GHz wide band CMOS power amplifier

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2013 6th UK, Europe, China Millimeter Waves and THz technology Workshop, UCMMT 2013

作者： Yan, Pinpin Chen, Jixin Hong, Wei Jiang, Xin State Key Laboratory of Millimeter Waves School of Information Science and Engineering Southeast University Nanjing 210096 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing 210016 China

A wide band power amplifier is designed by using 90nm CMOS process. By proper arrangement of frequency response among circuit stages, the amplifier exhibit maximum gain of 15dB at 47-48GHz and 3dB bandwidth from 42 to... 详细信息

ISBN: (纸本)9781479909810

关键词： Power amplifiers

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Study on 2000V SiC JBS Diodes

Study on 2000V SiC JBS Diodes

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2013 3rd International Conference on Electric and Electronics(EEIC 2013)

作者： Gang Chen Lin Wang Runhua Huang Song Bai Yun Li Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

High voltage 4H-SiC Ti schottky junction barrier schottky（JBS） diode with breakdown voltage of 2000 V and forward current of 2A has been fabricated. A low reverse leakage current below 1.9×10A/cm at the bias voltage of-2kV has been obtained. The forward on-state current was 2A at V = 1.9V and 5A at VF = 3V. The chip is 2.3mm×2.3mm. The turn-on voltage is about 1.0V. The on-state resistance is 19.3m?·cm. The doping and thickness of the N-type drift layer and the device structure have been performed by numerical simulations. The SiC JBS devices have been fabricated and the processes were in detail. The die was packaged with SMB mode. The thickness of the Nepilayer is 17μm, and the doping concentration is 4.6×10cm. A floating guard rings edge termination have been used to improve the effectiveness of the edge termination technique. By using Ti/Ni/Ag multilayer metal structure, the double side Ag process of 4H-SiC JBS diode is formed. We use the PECVD SiN/SiO as the passivation dielectric and a non photosensitive polyamide as the passivation in the end.

关键词： 4H-SiC JBS Floating guard rings

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