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第十七届全国化合物半导体材料微波器件和光电器件学术会议

作者： Jinyu Ni Cen Kong Jianjun Zhou Xun Dong Zhonghui Li Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China

A 1.9-μm-thick GaN high electron mobility transistors (HEMT) structure has been grown on 3-inch Si (111) substrate by metalorganic chemical vapor *** using an AIN buffer layer and two AI-content step-graded AIGaN transition layers and optimizing the growth conditions,the GaN HEMT structure shown excellent electrical properties with flat film surface and good GaN crystalline quality.A sheet resistance of 328 Ω/□□ and sheet electron density of 1155 × 1013 cm-2,resulting in an electron mobility of 1650 cm2/Vs,was measured on the GaN HEMT *** GaN HEMTs were successful fabricated on this structure.A maximum drain-gate breakdown voltage BVGmax of 320 V and a maximum drain current IDSmax of 2.2 A were obtained.

关键词： GaN Si substrate HEMT Power electronic device Transition Layers

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A technology-independent table-based model for advanced GaN Schottky barrier diodes

A technology-independent table-based model for advanced GaN ...

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IEEE International Workshop on Radio-Frequency Integration technology (RFIT)

作者： Zheng Zhong Yong-Xin Guo Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute China National University of Singapore Singapore

In this paper, a novel non-quasi-static table-based model has been developed for advanced Gallium Nitride (GaN) Schottky barrier diodes, which are widely used in current RF energy harvesting and wireless power transmission (WPT) applications. This novel table-based model can be simply built based on the measured S-parameters and I-V characteristics of these GaN diodes. In contrast with many complicated traditional models, this technology-independent modeling method includes no ambiguous curve fitting and de-embedding processes. Furthermore, this large-signal model is theoretically suitable for all kinds of diodes and could be easily imported into the computer-aided design (CAD) software. To verify its accuracy, measured and modeled results of different kinds of GaN diodes are compared and excellent agreement has been obtained.

关键词： Decision support systems Radio frequency

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A Simple Method to Accurately Determine the Temperature Dependence of Thermal Resistance of InP HBTs

A Simple Method to Accurately Determine the Temperature Depe...

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2012 IEEE 11th International Conference on Solid-State and integrated Circuit technology(ICSICT-2012)

作者： Jun Liu Wei Cheng Lin Zhang Haiyan Lu Chunlin Han Key Laboratory for RF Circuits and Systems of Ministry of Education Hangzhou Dianzi University Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

ISBN: (纸本)9781467324748

A simple method to accurately determine the nonlinear dependence of the thermal resistance of heterojunction bipolar transistors（HBTs）on ambient and junction temperatures is presented.A nonlinear model of the thermal resistance dependence on the power dissipation is introduced for the actual junction temperature *** method is demonstrated by an accurate extraction of thermal effects of a power HBT with an effective emitter area of 1×15μm2,fabricated with an in-house InP HBT technology.

关键词： Heterojunction Bipolar Transistor thermal resistance model extraction

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High power and high efficiency GaN HEMT with WN Schottky barrier

High power and high efficiency GaN HEMT with WN Schottky bar...

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IEEE International Workshop on Radio-Frequency Integration technology (RFIT)

作者： Tangsheng Chen Jianjun Zhou Chunjiang Ren Zhonghui Li Shichang Zhong Bin Zhang Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing P. R. China

In this paper, a high power and high efficiency L/S-band GaN HEMT with tungsten nitride (WN) Schottky barrier is presented. By employing WN Schottky barrier, the reaction between the gate electrode and AlGaN layer is minimized and the Schottky barrier reveals good thermal stability. At 2.2 GHz, the developed GaN HEMT with 1.25 mm gate periphery delivers an output power density of 3.3W/mm with 75% maximum power-added efficiency (PAE). The accelerated life test shows that the mean time to failure (MTTF) of the developed devices is 1.8×10 7 hours at 150°C channel temperature with an activation energy of 1.5 e V. Output power more than 90 W and PAE about 70% are obtained with a 2×12 mm gate periphery packaged device between 1.14 GHz and 1.24 GHz.

关键词： Logic gates Gallium nitride HEMTs Schottky barriers Power generation Metals Semiconductor device measurement

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Transmission Characteristics of a Generalized Parallel Plate Dielectric Waveguide at THz Frequencies

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Chinese Physics Letters 2011年第12期28卷 128-131页

作者： YE Long-Fang XU Rui-Min ZHANG Yong LIN Wei-Gan Extra High Frequency Key Laboratory of Fundamental Science School of Electronic EngineeringUniversity of Electronic Science and Technology of ChinaChengdu 611731 National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing 210016

A generalized parallel-plate dielectric waveguide(G-PPDW)is proposed as a new guiding medium for terahertz wave.A theoretical analysis of the transmission characteristics for the TE modes of this generalized structure is *** are presented for the field components,dispersion,power ratio,transmission loss and characteristic impedance as functions of the operating frequencies,dimensions and material *** the case of the lowest-order mode TE10,design curves covering frequencies and dimensions for the given material constants in the THz region are *** theoretical results of transmission characteristics obtained from these equations are verified by the finite-element method with a good *** investigation results show that by selecting proper dimensions and dielectric materials,G-PPDW can be used to guide THz waves efficiently with high power confinement and low *** outstanding properties may open up a way to many important applications for THz integrated circuits and systems.

关键词： waveguide Waveguide dimensions

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Corrigendum to “Accurate calculation of terahertz attenuation of a dielectric-coated metal wire with an intervening air gap using the engineering approach” [Optics Communications 284/16–17 (2011) 3990–3995]

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Optics Communications 2012年第5期285卷 857-857页

作者： Zhihui Wang Yong Zhang Ruimin Xu Weigan Lin School of Electronic Engineering University of Electronic Science and Technology of China Chengdu 611731 China National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing 210016 China

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A monolithic AlGaN/GaN HEMT VCO using BST film varactor

A monolithic AlGaN/GaN HEMT VCO using BST film varactor

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4th IEEE International Symposium on Radio-Frequency Integration technology, RFIT2011

作者： Kong, Cen Li, Hui Jiang, Shuwen Zhou, Jianjun Chen, Xiaojian Chen, Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Device Institute Nanjing 210016 China State Key Laboratory of Electronic Thin-Film and Integrated Devices University of Electronic Science and Technology of China Chengdu 610054 China

ISBN: (纸本)9781457705182

A monolithic AlGaN/GaN HEMT voltage controlled oscillator (VCO) using barium strontium titanate (BST) MIM varactor is reported first time. The BST thin film was fabricated by RF magnetron sputtering. The fabrication process is fully compatible with the standard GaN MMIC integrated process. An output power of 17dBm and the phase noise of -75dBc/Hz (at 100kHz) and -110dBc/Hz (at 1MHz) are obtained while the bias of the drain is 8V and BST varactor voltage is 0V. The VCO exhibits 500MHz tunable frequency bandwidth at the central frequency of 6.42GHz while BST varactor voltage changed from 0V to 20V. © 2011 IEEE.

关键词： Barium strontium titanate

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低真空条件下石墨烯薄膜的制备工艺研究

低真空条件下石墨烯薄膜的制备工艺研究

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第十七届全国化合物半导体材料微波器件和光电器件学术会议

作者： Yun Li 李赟 Zhijun Yin 尹志军 Zhiming Zhu 朱志明 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanfing Electronic 微波毫米波单片集成和模块电路重点实验室南京电子器件研究所南京 210016

本文利用水平热壁式CVD外延炉开展了SiC热分解法制备石墨烯薄膜的实验,主要研究了不同的真空热处理时间对石墨烯薄膜生长的影响。SiC衬底的氢气在线刻蚀处理和热分解在同一炉次进行,高温时反应室释放出之前吸附的氢气不能有效地被分子... 详细信息

本文利用水平热壁式CVD外延炉开展了SiC热分解法制备石墨烯薄膜的实验,主要研究了不同的真空热处理时间对石墨烯薄膜生长的影响。SiC衬底的氢气在线刻蚀处理和热分解在同一炉次进行,高温时反应室释放出之前吸附的氢气不能有效地被分子泵抽除,SiC衬底的有效碳化时间有限,实验发现热处理时间超过30分钟之后,石墨烯层数并无明显变化。进一步加长热处理时间,石墨烯样品中出现局部氢插入层。

关键词：石墨烯薄膜碳化硅衬底制备工艺性能评价低真空条件

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高质量GaN薄膜的MOCVD同质外延生长

高质量GaN薄膜的MOCVD同质外延生长

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第十七届全国化合物半导体材料微波器件和光电器件学术会议

作者： Liang Li 李亮 Zhonghui Li 李忠辉 Weike Luo 罗伟科 Xu Dong 董逊 Daqing Peng 彭大青 Dongguo Zhang 张东国微波毫米波单片集成和模块电路重点实验室南京电子器件研究所南京210016 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronics Device InstituteNaning210016 China

采用金属有机化学气相沉积(MOCVD)方法,在GaN自支撑衬底上同质外延生长了GaN薄膜,得到高质量的GaN外延薄膜。X射线衍射(XRD)结果显示其(002)面摇摆曲线半高宽小于100弧秒,原子力显微镜(AFM)照片上能看到连续的二维台阶流形貌,其表面租... 详细信息

采用金属有机化学气相沉积(MOCVD)方法,在GaN自支撑衬底上同质外延生长了GaN薄膜,得到高质量的GaN外延薄膜。X射线衍射(XRD)结果显示其(002)面摇摆曲线半高宽小于100弧秒,原子力显微镜(AFM)照片上能看到连续的二维台阶流形貌,其表面租糙度小于0.5nm,其位错密度低于l06cm-3。

关键词：半导体薄膜氮化镓同质外延金属有机化学气相沉积

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低温GaN插入层对AlGaN/GaN二维电子气特性的改善

低温GaN插入层对AlGaN/GaN二维电子气特性的改善

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第十七届全国化合物半导体材料微波器件和光电器件学术会议

作者： Dongguo Zhaang 张东国 Zhonghui Li 李忠辉 Daqing Peng 彭大青 Xun Dong 董逊 Liang Li 李亮 Jinyu Ni 倪金玉 Science and Technology of Monolithic Integrated and Modules Circuits Key Laboratory Nanjing Electronic Devices Institute Nanfing 210016 China 微波毫米波单片集成和模块电路重点实验室南京电子器件研究所南京 210016

利用低压MOCVD技术在蓝宝石衬底上生长了AlGaN/GaN二维电子气(2DEG)材料,在GaN生长中插入一层低温GaN,并研究了低温GaN插入层对二维电子气输运特性的影响。使用原子力显微镜(AFM)和非接触霍尔测试仪测量了材料的表面形貌和电学特性,发... 详细信息

利用低压MOCVD技术在蓝宝石衬底上生长了AlGaN/GaN二维电子气(2DEG)材料,在GaN生长中插入一层低温GaN,并研究了低温GaN插入层对二维电子气输运特性的影响。使用原子力显微镜(AFM)和非接触霍尔测试仪测量了材料的表面形貌和电学特性,发现低温GaN插入层可以改善材料表面平整度并使AlGaN/GaN2DEG的电子迁移率有明显提高,GaN插入层温度为860℃的样品2DEG的电子迁移率达到2110 cm2/V.s。

关键词：异质结半导体低温氮化镓插入层二维电子气性能改善电子迁移率

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