Efficient large-scale nondestructive quality assessment of graphene on Pt is essential to the in-depth growth research and practical applications of ***,we present a very simple method for directly observing the domai...
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Efficient large-scale nondestructive quality assessment of graphene on Pt is essential to the in-depth growth research and practical applications of ***,we present a very simple method for directly observing the domains and defects in graphene on Pt using an ordinary optical *** was achieved by modifying graphene on Pt using methylene blue(MB).Because the chemical activities of graphene and Pt surface differ significantly,the adsorption and reaction of MB on graphene and platinum surface *** can determine the distribution of graphene crystal domains and defects by comparing the colors in the optical *** addition,this characterization method causes no obvious damage to the Pt substrate and ***,it does not affect the recycling of the substrate or the subsequent characterization or application of *** study provides a nondestructive method for measuring the quality of graphene on Pt on a large scale,as well as a reference for the characterization and doping of other two-dimensional materials.
Epitaxial GaAs-on-Si is an ideal material system for studying the physics of mismatched heteroepitaxy of a polar semiconductor layer grown on a non-polar substrate like silicon. Understanding and optimization of the i...
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This paper presents the implementation of a near-field focusing (NFF) antenna on basis of radial line slot array (RLSA). The proposed NFF-RLSA antenna is derived from the conventional single-layer spiral-patterned RLS...
This paper presents the implementation of a near-field focusing (NFF) antenna on basis of radial line slot array (RLSA). The proposed NFF-RLSA antenna is derived from the conventional single-layer spiral-patterned RLSA with circular polarizations, and near-field focused radiation characteristics is realized by adjusting the arrangements of radiating slot pairs and hence the amplitude and phase distribution of RLSA aperture. The designed NFF-RLSA antenna is 14.4λ0 in diameter and 0.17λ0 in height, where λ0 donates the wavelength in free space at the operating frequency, namely 10GHz. Simulation results show that the focus spot is 22.5λ0 away from the antenna aperture, while a focusing gain of 31.2dBi is achieved, and the size of focus spot is 2.48λ0 in width and 11.3λ0 in depth of focus, respectively.
Commercially available AlGaN/GaN high-electron-mobility transistors(HEMTs)are beginning to enter the public scene froma range of *** on previous studies,commercial GaN-based electronics are expected to be tolerant to ...
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Commercially available AlGaN/GaN high-electron-mobility transistors(HEMTs)are beginning to enter the public scene froma range of *** on previous studies,commercial GaN-based electronics are expected to be tolerant to different types of irradiation in *** test this assumption,we compared the characteristic electrical curves obtained at different X-ray irradiation doses for GaN HEMT devices manufactured by Infineon and *** p-GaN-based device was found to be more robust with a stable threshold voltage,whereas the threshold voltage of the device with ametal-insulator-semiconductor gatewas found to shift first in the negative and then the positive *** dynamic phenomenon is caused by the releasing and trapping effects of radiation-induced charges in the dielectric layer and at the interface of irradiated *** such,the p-GaNgate-based GaN HEMT provides a promising solution for use as an electric source in space.
A Doherty Power Amplifier (PA) with high efficiency and high linearity that can be used in smart communication devices such as mobile phones in the sub-6GHz frequency band is proposed. This Doherty PA uses the InGaP/G...
A Doherty Power Amplifier (PA) with high efficiency and high linearity that can be used in smart communication devices such as mobile phones in the sub-6GHz frequency band is proposed. This Doherty PA uses the InGaP/GaAs hetero-junction bipolar transistor (HBT) process. Compared with the traditional Doherty PA, the PA in this paper combines the choke inductance of the output collector and the phase compensation circuit with the output circuit of the Doherty PA respectively, which reduces the number of components required for matching. From the simulation, when the power supply voltage of the Doherty power amplifier is 4.2V, the operating frequency is 3.5GHz and the output power is 26.5dBm, the power added efficiency (PAE) reaches 34.5%, at the same time when using a 10MHz bandwidth LTE-3GPPFDD modulated signal the Adjacent Channel Power Ratio (ACPR) below to -35dBc.
This paper presents a blind calibration algorithm for a multi-channel time-interleaved analog-to-digital conversion system implemented in MATLAB/simulink. The behavior level simulation of the calibration system is car...
This paper presents a blind calibration algorithm for a multi-channel time-interleaved analog-to-digital conversion system implemented in MATLAB/simulink. The behavior level simulation of the calibration system is carried out. The simulation results show that the signal-to-noise ratio (SNR), signal-to-noise-distortion ratio(SNDR), and spurious-free dynamic range (SFDR) of the signal corrected by the calibration system are greatly improved, which lays a solid foundation for the subsequent digital circuit design. Behavioral simulations are presented for a 4-channel 10-bit TI-ADC in order to verify the effectiveness of the proposed method. Using the introduced calibration technique, SFDR increased by 33 dB on average.
作者：
Miao YuMin HuangJian ZhuNanjing University
School of Electronic Science and Engineering Nanjing Electronic Devices Institute Nanjing China Nanjing Electronic Devices Institute
Nanjing China Nanjing University
School of Electronic Science and Engineering Nanjing Electronic Devices Institute Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China
simplified evaluation methods for the analysis on the thermal and hydraulic properties of the silicon microfluidic interposer for GaN power device cooling are proposed in this work. The microjet-microchannel hybrid st...
simplified evaluation methods for the analysis on the thermal and hydraulic properties of the silicon microfluidic interposer for GaN power device cooling are proposed in this work. The microjet-microchannel hybrid structure and the parallel microchannel structure are analyzed and compared based on the theoretical and empirical equations. It is depicted that water realizes the best cooling performance among the common coolants driven by the identical pressure in the parallel microchannel structure. The convective heat transfer thermal resistance and heat transfer coefficient of the microjet-microchannel hybrid structure exhibit 22.4 % decrease and 2.24 times enhancement in comparison to the parallel microchannel structure on the conditions of the identical pressure and volume flow rate, respectively.
The cooling capability of the silicon interposers (SIs) with microjet and microchannel cooling for GaN device has been validated by practical implementations and characterized by numerical analysis in this work. A 5.3...
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monolithic integration has been demonstrated to be an ideal solution to minimize the parasitics in GaN power IC. Nonetheless, the current commercially GaN process for power IC is far less mature and only n-type HEMTs ...
monolithic integration has been demonstrated to be an ideal solution to minimize the parasitics in GaN power IC. Nonetheless, the current commercially GaN process for power IC is far less mature and only n-type HEMTs are available. Therefore, it is difficult for high voltage level shifters to achieve high speed. This work implements a level shifter for GaN IC to achieve both small response time and high $\mathrm{d}V_{\mathrm{S}}/\text{dt}$ noise immunity without complicated signal processing circuits, thus delay and conduction loss will be minimized. The proposed circuit was fabricated in a $1\mu\mathrm{m}$ GaN-on-Silicon process and measured results were performed to verify the characteristics.
GaAs terahertz schottky barrier diode SBD has been a major technology in terahertz wave multiplexing, mixing and direct detection for decades, due to its high mobility and low capacity. In this paper, T-Anode GaAs ter...
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