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2013 IEEE 5th International Symposium on Microwave,Antenna,Propagation and EMC Technologies for Wireless Communications

作者： Yonghong Tao Song Bai Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

ISBN: (纸本)9781467360760

In the paper,30mm high-power SiC MESFETs have been *** load-pull testing at 1.5 GHz and 48V drain to source voltage,packaged 2 ×30mm SiC MESFET transistors were demonstrated with output power higher than 107W with 48.1% PAE,and the gain was 10.3 dB under continuous wave RF *** gate periphery divices of 1mm SiC MESFET exhibited 35 dBm output power with more than 55% PAE,and the gain was 12.3 dB under continuous wave RF operation at 1.5 GHz and 48V drain to source voltage.

关键词： SiC MESFET CW load-pull MESFETs load-pull Output power Gain

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A 100MS/s Pipeline ADC Without Calibration in 0.18μm CMOS technology 14

A 100MS/s Pipeline ADC Without Calibration in 0.18μm CMOS T...

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14th International Conference on Microwave and Millimeter Wave technology, ICMMT 2022

作者： Zhang, Yi Liu, Yaqin Xia, Hongliang Yang, Lei Wang, Yang Zhang, Youtao Guo, Yufeng College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing China State Key Laboratory of Millimeter Waves Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing GuoBo Electronics Co. Ltd Nanjing China Nanjing Vocational University of Industry Technology Nanjing China

ISBN: (纸本)9781665467520

Based on SMIC 180nm CMOS process and 1.8/3.3V power supply voltage, a high-speed pipeline ADC is designed in this paper. After a comprehensive consideration of conversion rate and accuracy, the pipelined architecture is finally determined to be 3.5b3+5b. The redundant calibration technology is adopted between each stage to reduce the influence of comparator offset on ADC accuracy. To reduce power consumption and area, SHA-less sampling is adopted. The traditional bootstrap switch is improved to dynamically change the substrate potential so as to reduce the influence of leakage in SHA-less sampling circuit. The post-simulation results shows that the high-speed pipeline ADC designed in this paper can reach 9.97-bit ENOB and 67.76 dB SFDR under the sampling frequency of 100MS/s and input signal frequency of Nyquist, the overall power consumption is about 390mW, and the overall area of the layout is 4.56mm2. © 2022 IEEE.

关键词： Electric power utilization

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Current Gain Increase by SiNx Passivation in InGaAs/InP Double Heterostructure Bipolar Transistors

Current Gain Increase by SiNx Passivation in InGaAs/InP Doub...

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2015 International Conference on Communication Problem-Solving(ICCP)

作者： Junling Xie Wei Cheng Yuan Wang Bin Niu Long Chang Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

Passivation of InGaAs/InP double heterostructure bipolar transistors（DHBTs） with room temperature SiN deposition was investigated. Due to reduction of surface damages during SiN deposition, current gain improvement was observed at low bias voltage region. According to our analysis, a drastic decrease of surface recombination related current component at base-emitter junction occurred after passivation, which is crucial for improving the device reliability.

关键词： InP heterostructure bipolar transistor silicon nitride passivation

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Research and Implementation of 150W SiC Internally Match and Power Combiner at S Band

Research and Implementation of 150W SiC Internally Match and...

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2013 IEEE 5th International Symposium on Microwave,Antenna,Propagation and EMC Technologies for Wireless Communications

作者： Gang Chen Shichang Zhong Yuchao Li Song Bai Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

ISBN: (纸本)9781467360760

As one of the third generation semiconductor materials,SiC has many advantages,such as high-power,high gate-drain breakdown voltage,heat stability and anti-radiation *** it is of high value for study and application *** paper bases on 20mm SiC MESFET which is made by NEDI,through internally match circuit and power combiner technology,designs a power *** power module output power has 150W with the gain is 9dB at S-band 2.8GHz under a pulse condition of 100us pulse width and 10% duty cycle.

关键词： SiC MESFET Internally Match circuit Power Combiner Power combiners pulse condition power module DUTY CYCLE Superhigh frequency

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CL-TWE Mach–Zehnder electro-optic modulator based on InP-MQW optical waveguides

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Chinese Optics Letters 2019年第6期17卷 36-40页

作者： Guang Qian Bin Niu Wu Zhao Qiang Kan Xiaowen Gu Fengjie Zhou Yuechan Kong Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices InstituteNanjing 210016China Key Laboratory of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China

In this Letter,we reported the preliminary results of an integrating periodically capacitive-loaded traveling wave electrode(CL-TWE)Mach–Zehnder modulator(MZM)based on InP-based multiple quantum well(MQW)optical *** device configuration mainly includes an optical Mach–Zehnder interferometer,a direct current electrode,two phase electrodes,and a CL-TWE consisting of a U electrode and an I *** modulator was fabricated on a 3 *** epitaxial wafer by standard photolithography,inductively coupled plasma dry etching,wet etching,electroplating,*** results show that the MZM exhibits a3 dB electro-optic bandwidth of about 31 GHz,a Vπof 3 V,and an extinction ratio of about 20 dB.

关键词： optical Mach multiple plasma wave was dB

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Application of 1200V-8A SiC JBS diodes in the motor system

Application of 1200V-8A SiC JBS diodes in the motor system

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2013 International Conference on Precision Mechanical Instruments and Measurement technology, ICPMIMT 2013

作者： Liu, Ao Chen, Gang Bai, Song Li, Rui Sun, Wei Feng Nanjing Electronic Device Institute Nanjing 210016 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing 210016 China National ASIC System Engineering Research Center Southeast University Nanjing 210096 China

1200V-8A 4H-SiC junction barrier schottky (JBS) diodes were designed and fabricated based on in-house SiC epitaxy and device technology. As a free-wheeling diode for the IGBT in inverter of motor system, the 1200V SiC JBS diode was compared to the Si ultra-fast diode from Fairchild Co. Ltd. The SiC diode achieved 88% recovery loss reduction and corresponding IGBT showed 35% lower turn-on loss. So, it will promote the application of motor system in high frequency and high efficiency. © 2013 Trans Tech Publications Ltd, Switzerland.

关键词： Silicon carbide

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0.15 μm GaN MMIC PA Based on Advanced i-line Lithography Process 17

0.15 μm GaN MMIC PA Based on Advanced i-line Lithography Pr...

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17th China International Forum on Solid State Lighting and 2020 International Forum on Wide Bandgap Semiconductors China, SSLChina: IFWS 2020

作者： Huang, Wei Wang, Suyuan Liu, Zhu Zhang, Junyun Huang, Nianning Wang, Xinqiang Chen, Tangsheng Nanjing Electronic Devices Institute Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing210016 China Peking University State Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of Physics Beijing100871 China

ISBN: (纸本)9780738111889

The resolution enhancement lithography assisted by chemical shrink (RELACS) is presented to increase the resolution of the i-line lithography. We have succeeded in developing an advanced i-line lithography process based on i-line stepper lithography and second-RELACS process. Moreover, the limit resolution of i-line lithography can be increased from 0.35 μm to 0.1 μm at the first time, and the wafer yield of GaN high electron mobility transistor (HEMT) with 3.1 mm gate width which has an Lg = 0.147 μm is 87.4 %. Besides, the second-RELACS process is applied to X-band GaN monolithic microwave integrated circuit power amplifier (MMIC PA), the resist width and gate length are about 0.15 μm and 0.2 μm. It is confirmed that the wafer yield of T gate with 6.8 mm gate width can be as high as 70.2 %. Comparing with the results of deep ultra-violet (DUV) lithography, the electrical and radio frequency (RF) characteristics of the GaN HEMTs fabricated with the second-RELACS process are stable. © 2020 IEEE.

关键词： Gallium nitride

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Terahertz 4th-Order Downconversion Mixer Using Symmetric MOS Varactors

Terahertz 4th-Order Downconversion Mixer Using Symmetric MOS...

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International Conference on Microwave and Millimeter Wave technology Proceedings

作者： Zhao Yingdong Zhang Kai Yang Fei School of Electronic Science & Engineering Southeast University Science and Technology on Monolithic Integrated Circuits and Modules Laboratory

A 4th-order subharmonic downconversion mixer with a radio frequency (RF) of 480 GHz and intermediate frequency (IF) of 20 GHz that employs MOS symmetric varactors (SVARs) is demonstrated in 65-nm CMOS. The mixer achieves the minimum conversion loss of 25 dB at 20 GHz, VG = 0.5 V and VNW = 1 V. The return loss of the output port can reach nearly 30 dB, achieving a good matching effect, and can operate at a LO power of 9 dBm. The 4-GHz IF bandwidth spans between 18 and 22 GHz.

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Study on Fabrication and Fast Switching of High Voltage SiC JFET

Study on Fabrication and Fast Switching of High Voltage SiC ...

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2013 International Conference on Solar Energy Materials and Energy Engineering(SEMEE 2013)

作者： Gang Chen Song Bai Runhua Huang Yonghong Tao Ao Liu Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

SiC devices have excellent properties such as ultra low loss, high withstand voltage, large capacity, high frequency, and high temperature operation compared with Si devices. The SiC JFET is expected to be appropriate for the power device because a JFET has no oxide-semiconductor interface in the channel region and does not use the low mobility SiC MOSFET inversion layer as a channel. Forward I-V up to 4A for SiC VJFET, Gate voltage from 2V to 3.5V by step 0.5V. Reverse Ⅰ-Ⅴ characteristics up to 4500V(VG=-8V) for SiC VJFET, Gate voltage from -4V to -8V by step -2V. Turn-off characteristics are studied and fast turn-off time of 136 ns at room temperature under DC voltage of 600 V is successfully demonstrated.

关键词： SiC JFET Ohmic Trench

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Progress of High Voltage Trenched and Implanted 4H-SiC Vertical JFET

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Energy and Power Engineering 2013年第4期5卷 1284-1287页

作者： Gang Chen Song Bai Yonghong Tao Yun Li 1Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China 2Nanjing Electronic Devices Institute Nanjing China Nanjing Electronic Devices Institute Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China

A silicon carbide (SiC) vertical channel junction field effect transistor (VJFET) was fabricated based on in-house SiC epitaxial wafer with trenched and implanted method. Its forward drain current is in excess of 3.12 A (170 W/cm2) with a current gain of ID/IG = 19746 at gate bias VG = 3 V and drain bias VD = 5.5 V. The SiC VJFET device’s related specific on-resistance 54 mΩ·cm2. The BV gain is 250 V with Vg from -10 V to -4 V and is 350 V with Vg from -4 V to -2 V. Self-aligned floating guard rings provide edge termination that blocks 3180V at a gate bias of ?14 V and a drain-current density of 1.53 mA/cm2.

关键词： 4H-SiC VJFET Ohmic Trench Implant

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