检索结果-内蒙古大学图书馆

您好，读者！请登录

内蒙古大学图书馆

首页
概况
党建
资源
服务
科研支持
- 论文收录引用证明
- 科技查新
知识产权
档案馆
帮助

咨询与建议

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

您的常用邮箱：*

您的手机号码：*

问题描述：

当前已输入0个字，您还可以输入200个字

全部搜索
期刊论文
图书
学位论文
标准
纸本馆藏
外文资源发现
数据库导航
超星发现

高级检索

时间限定

出版年份：

文献类型

图书期刊文献学位论文多媒体

馆藏选择

电子馆藏纸本馆藏

核心期刊

全部期刊 SCI 收录期刊 SSCI 收录期刊 EI 收录期刊 CSCD 收录期刊 CSSCI 收录期刊

语言

中文英文

文献类型

期刊文献图书学位论文标准纸本馆藏

帮助

文字说明：

T=题名（书名、题名），A=作者（责任者），K=主题词，P=出版物名称，PU=出版社名称，O=机构（作者单位、学位授予单位、专利申请人），L=中图分类号，C=学科分类号，U=全部字段，Y=年（出版发行年、学位年度、标准发布年）

检索规则说明：

AND代表“并且”；OR代表“或者”；NOT代表“不包含”；(注意必须大写,运算符两边需空一格)

检索范例：

范例一：(K=图书馆学 OR K=情报学) AND A=范并思 AND Y=1982-2016
范例二：P=计算机应用与软件 AND (U=C++ OR U=Basic) NOT K=Visual AND Y=2011-2016

分类表

所选分类

>> <<

限定检索结果

文献类型

135 篇 会议
66 篇 期刊文献

馆藏范围

201 篇 电子文献
0 种 纸本馆藏

日期分布

学科分类号

140 篇 工学
- 124 篇 电子科学与技术（可...
- 85 篇 材料科学与工程（可...
- 49 篇 化学工程与技术
- 34 篇 电气工程
- 20 篇 信息与通信工程
- 13 篇 计算机科学与技术...
- 11 篇 光学工程
- 9 篇 冶金工程
- 8 篇 仪器科学与技术
- 8 篇 动力工程及工程热...
- 6 篇 软件工程
- 3 篇 网络空间安全
- 2 篇 机械工程
- 2 篇 轻工技术与工程
- 1 篇 控制科学与工程
- 1 篇 航空宇航科学与技...
- 1 篇 生物医学工程（可授...
- 1 篇 生物工程
68 篇 理学
- 49 篇 化学
- 40 篇 物理学
- 6 篇 数学
- 4 篇 地质学
- 1 篇 生物学
- 1 篇 统计学（可授理学、...
3 篇 管理学
- 3 篇 管理科学与工程(可...

主题

24 篇 gallium nitride
13 篇 hemts
12 篇 silicon carbide
9 篇 indium phosphide
8 篇 modfets
7 篇 power amplifiers
7 篇 inp
7 篇 silicon
6 篇 logic gates
6 篇 performance eval...
6 篇 heterojunction b...
5 篇 scattering param...
5 篇 microwave integr...
5 篇 integrated circu...
5 篇 aluminum gallium...
5 篇 radio frequency
4 篇 iii-v semiconduc...
4 篇 simulation
4 篇 schottky barrier...
4 篇 substrates

机构

78 篇 science and tech...
45 篇 science and tech...
30 篇 nanjing electron...
10 篇 nanjing guobo el...
9 篇 state key labora...
9 篇 college of integ...
7 篇 science and tech...
6 篇 science and tech...
6 篇 science and tech...
6 篇 national key lab...
5 篇 fundamental scie...
5 篇 nanjing electron...
5 篇 department of mi...
5 篇 nanjing electron...
4 篇 fundamental scie...
4 篇 science and tech...
4 篇 school of electr...
3 篇 national asic sy...
3 篇 center of materi...
3 篇 key laboratory o...

作者

29 篇 tangsheng chen
23 篇 wei cheng
19 篇 yuechan kong
17 篇 haiyan lu
15 篇 jianjun zhou
13 篇 chen chen
12 篇 chen tangsheng
11 篇 bin niu
10 篇 chen gang
10 篇 bai song
10 篇 zhou jianjun
8 篇 zhonghui li
8 篇 li liang
8 篇 陈堂胜
8 篇 li yun
8 篇 kai zhang
8 篇 孔月婵
8 篇 cheng wei
8 篇 ruimin xu
8 篇 yi zhang

语言

188 篇 英文
11 篇 中文
2 篇 其他

检索条件"机构=Science and Technology on Monolithic Integrated Circuit and Modules Laboratory"

共 201 条记录，以下是111-120 订阅

全选清除本页清除全部题录导出标记到"检索档案"

详细简洁

排序：

Enhancement-mode Al2O3/InAlGaN/GaN MOS-HEMTs with a record drain current density of 1.7 A/mm and a threshold voltage of +1.5 V

Enhancement-mode Al2O3/InAlGaN/GaN MOS-HEMTs with a record d...

引用

China International Forum o Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

作者： Kai Zhang Jianjun Zhou Cen Kong Yuechan Kong Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing

ISBN: (纸本)9781509046140

The paper reports high performance enhancement-mode MOS-HEMT based on quaternary InAlGaN barrier. A self-aligned gate technology is used for gate recessing, dielectric deposition and gate electrode formation processes, where improved digital recessing process as well as O2 plasma-assisted Al 2 O 3 gate dielectric is developed. Fabricated E-mode MOS-HEMT delivers a record output current density of 1.7A/mm with a threshold voltage (V TH ) of 1.5 V, and a small on-resistance (R on ) of 2.0 Q-mm. Excellent V TH hysteresis and greatly improved gate leakage characteristics are also demonstrated.

关键词： Logic gates HEMTs MODFETs Dielectrics Aluminum oxide Threshold voltage Leakage currents

来源：评论

学校读者我要写书评

暂无评论

High power performance AlGaN/GaN HEMT with 0.1 μm Y-shaped gate encapsulated with low-κ BCB

High power performance AlGaN/GaN HEMT with 0.1 μm Y-shaped ...

引用

IEEE Conference on Electron Devices and Solid-State circuits

作者： Xinxin Yu Jianjun Zhou Yuechan Kong Daqing Peng Weibo Wang Fangjin Guo Haiyan Lu Wen Wang Cen Kong Zhonghui Li Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China

ISBN: (纸本)9781509018314

High power performance AlGaN/GaN HEMT devices with 0.1 μm Y-shaped gates encapsulated with low-κ BCB are reported. The maximum drain current and transconductance of the device are 1.15 A/mm and 350 mS/mm, respectively. The two-terminal breakdown voltage exceeds 30 V, which ensures a high operating voltage. Using the novel 0.1 μm low parasitic Y-shaped gate associated with AlGaN back barrier, a f T of 90 GHz and a f max of 170 GHz were obtained for the device. Through measurements of the W-band GaN MMIC PA, ability of 1.55 W/mm output power density was achieved for the device at frequency of 92 GHz. These outstanding performance indicates the devices are suitable for W-band MMIC applications.

关键词： Decision support systems Logic gates Conferences Electron devices Solid state circuits Gain

来源：评论

学校读者我要写书评

暂无评论

Low Temperature Fine Pitch Au-In Solid Liquid Inter Diffusion Bonding for Wafer Level Packaging 21

Low Temperature Fine Pitch Au-In Solid Liquid Inter Diffusio...

引用

21st International Conference on Electronic Packaging technology, ICEPT 2020

作者： Dai, Jiayun Wang, Fei Xu, Lida Zhao, Desheng Han, Ping Chen, Tangshen Nanjing University National Laboratory of Solid State Microstructure China Nanjing Electronic Devices Institute Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Suzhou Institute of Nanotech and Nano-bionics Nano Fabrication Facility Suzhou China

ISBN: (纸本)9781728168265

A low temperature fine pitch wafer scale bonding process through Au-In solid liquid inter diffusion bonding is discussed in this paper. 20 µm fine pitch gold and indium miro-bumps with 10 µm diameter are fabricated on two oxidized silicon wafers. Then the wafer bonding process is accomplished at 180 °C with less than 2 µm alignment accuracy. Daisy chains of nearly 2500 interconnects with a fixed contact size of 10×10 µm2 connected successfully. Besides, there is no significant change of the daisy chain resistance after temperature cycling test. An average die shear strength of more than 20 MPa is also achieved. This work shows great potential of Au-In solid liquid inter diffusion bonding for future high density wafer level packaging and heterogeneous integration. © 2020 IEEE.

关键词： Temperature

来源：评论

学校读者我要写书评

暂无评论

0.15 μm GaN MMIC PA Based on Advanced i-line Lithography Process

0.15 μm GaN MMIC PA Based on Advanced i-line Lithography Pr...

引用

17th China International Forum on Solid State Lighting &2020 International Forum on Wide Bandgap Semiconductors (第十七届中国国际半导体照明论坛暨2020国际第三代半导体论坛)

作者： Wei Huang Suyuan Wang Zhu Liu Junyun Zhang Nianning Huang Xinqiang Wang Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic D Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic D State Key Laboratory of Artificial Micro structure and Mesoscopic Physics School of PhysicsPeking U

ISBN: (数字)9780738111889

ISBN: (纸本)9781665419642

The resolution enhancement lithography assisted by chemical shrink(RELACS)is presented to increase the resolution of the i-line *** have succeeded in developing an advanced i-line lithography process based on i-line stepper lithography and second-RELACS ***,the limit resolution of i-line lithography can be increased from 0.35 μm to 0.1 μm at the first time,and the wafer yield of GaN high electron mobility transistor(HEMT)with 3.1 mm gate width which has an Lg = 0.147 μm is 87.4%.Besides,the second-RELACS process is applied to X-band GaN monolithic microwave integrated circuit power amplifier(MMIC PA),the resist width and gate length are about 0.15 μm and 0.2 μ*** is confirmed that the wafer yield of T gate with 6.8 mm gate width can be as high as 70.2%.Comparing with the results of deep ultra-violet(DUV)lithography,the electrical and radio frequency(RF)characteristics of the GaN HEMTs fabricated with the second-RELACS process are stable.

关键词： Lithography Logic gates Gallium nitride Resists HEMTs Microwave circuits Chemicals

来源：评论

学校读者我要写书评

暂无评论

Design of 40-67GHz Broadband Low Noise Amplifier MMIC

Design of 40-67GHz Broadband Low Noise Amplifier MMIC

引用

International Conference on Microwave and Millimeter Wave technology Proceedings

作者： Fan Yang WeiBo Wang YongPing Peng Zhongfei Chen Fangjin Guo Yan Chen Nanjing Electronic Device Institute China Science and Technology on Monolithic Integrated and Modules Laboratory Nanjing China

As a front-end signal processor in the receiver, the low noise amplifier has a crucial impact on the performance of the entire signal link. In this paper, a 40-67GHz broadband low noise amplifier MMIC is designed by 0.1μm InP HEMT process. The measured results show that the gain of the MMIC achieves 27dB with a gain flatness less than ±1dB in the full band. Both the input and output return losses are better than 10dB. At the same time, the typical value of the output 1dB compression point Po(1dB) is 0.5dBm and the representative noise figure is 2.2dB. The MMIC area is 2.4mm*1.1mm. Good performance can be achieved in the target frequency band.

关键词：

来源：评论

学校读者我要写书评

暂无评论

Developing the Ka-band GaN Power HEMT devices

Developing the Ka-band GaN Power HEMT devices

引用

2012 5th Global Symposium on Millimeter-Waves(2012年第五届全球毫米波会议 GSMM 2012)

作者： J. J. Zhou X. Dong C. Kong Y. C. Kong C. J. Ren Z. H. Li T. S. Chen C. Chen B. Zhang Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China

High quality Al0.3Ga0.7N/GaN/Al0.04Ga0.96N double heterostructure was grown by metal-organic chemical vapor deposition (MOCVD). Two kinds of fabrication technology of Ka band GaN HEMT devices were developed. Using developed 0.25 urn self-aligned Tshaped gate technology, a 4.5 W/mm output power density and 28％ PAE were obtained in continues wave (CW) mode at 34GHz. To increase the frequency performance of the GaN HEMT devices, a 0.15 μm Yshaped gate technology was developed. By using this technology, the parasitic capacitance is effectively suppressed. The fT and fmax of the GaN HEMT device fabricated with the 0.15 μm Yshaped gate technologies were greatly improved and reached 80GHz and 110GHz, respectively. A 3.1 W/mm output power density and 26.3％ PAE were also obtained in CW mode at 34GHz.

关键词： Ka-band GaN Power HEMT

来源：评论

学校读者我要写书评

暂无评论

Wafer-scale integration of GaAs pHEMT on Silicon by epitaxial layer transfer

Wafer-scale integration of GaAs pHEMT on Silicon by epitaxia...

引用

IEEE Conference on Electron Devices and Solid-State circuits

作者： Li Shu Wu Yan Zhao Gui Xiong Shi Wei Cheng Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China

The present work describes the study and improvement of heterogeneous integration based on epitaxial layer transfer technique, which is used to separate III/V device from their substrate and transfer to the other substrate. Our work aims in the development of a new process for integration of GaAs device with Silicon substrate. It is based on low temperature bonding of the epitaxial layer transfer technology with bisbenzocyclobutene (BCB). Using this method, we demonstrate that GaAs pseudomorphic high electron mobility transistor (pHEMT) device on a 3 inch-diameter GaAs wafer is transferred to a Silicon substrate, and evaluate the different thickness of BCB that affect the performance of GaAs pHEMT device.

关键词： Conferences Electron devices Solid state circuits

来源：评论

学校读者我要写书评

暂无评论

The research of heterogeneous integration based on epitaxial layer transfer technology

The research of heterogeneous integration based on epitaxial...

引用

IEEE Conference on Electron Devices and Solid-State circuits

作者： LiShu Wu Yan Zhao Wei Cheng Zi Qian Huang Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China

ISBN: (纸本)9781479923366

The present work describes the study and improvement of heterogeneous integration based on epitaxial layer transfer technique, which is used to separate III/V device structures from their substrate and transfer to the other substrate. Our work aims in the development of a new process for integration of GaAs devices with Si. It is based on low temperature bonding of the epitaxial layer transfer technology. Using this method, we demonstrate that GaAs PIN epitaxial layer on a 3 inch-diameter GaAs wafer is transferred to a silicon substrate. After the GaAs PIN epitaxial layer is transferred, the GaAs PIN devices on silicon are fabricated, besides the IV characteristic of GaAs PIN devices is unaffected by epitaxial layer transfer.

关键词： Epitaxial growth Gallium arsenide Substrates Lithography Performance evaluation Investment

来源：评论

学校读者我要写书评

暂无评论

AlGaN/GaN HEMTs on Si(100) substrate

AlGaN/GaN HEMTs on Si(100) substrate

引用

IEEE Conference on Electron Devices and Solid-State circuits

作者： Yan Zhao Cen Kong Lishu Wu Wei Cheng Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China

ISBN: (纸本)9781479923366

The Si (100) substrate of AlGaN/GaN HEMTs shows potential of the intimately heterogeneous integration of GaN and Si electronics. It offers new opportunities to increase the functionality and performance of GaN devices. In this paper, we describe our effort on demonstrating the heterogeneous integration of GaN transistor and Si substrate. AlGaN/GaN HEMTs have been fabricated on Si (100) substrate through epitaxial transfer process.

关键词： Gallium nitride HEMTs MODFETs Epitaxial growth Adhesives Silicon Performance evaluation

来源：评论

学校读者我要写书评

暂无评论

24.8 A W-Band Power Amplifier with Distributed Common-Source GaN HEMT and 4-Way Wilkinson-Lange Combiner Achieving 6W Output Power and 18% PAE at 95GHz

24.8 A W-Band Power Amplifier with Distributed Common-Source...

引用

IEEE International Conference on Solid-State circuits (ISSCC)

作者： Weibo Wang Fangjin Guo Tangsheng Chen Keping Wang Tianjin University Tianjin China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China

ISBN: (数字)9781728132051

ISBN: (纸本)9781728132068

W-band power amplifiers (PAs) play an important role in Gb/s-data-rate wireless communication, imaging, and radar applications. Traditionally, multiple transistors are connected in parallel to maximize the output power. Though the active area, including gate width and number of fingers, can be scaled up to generate large transistors, the metallic inter-connection is not suitable for scaling due to random shape and magnetic coupling. Thus, an accurate device model should be investigated by separating the scalable and the non-scalable parts. In additional, the maximum output power of the PA is known to be limited by intrinsic characteristics of power transistor, such as maximum current density, breakdown voltage, and parasitic element. Compared to silicon-based technology, GaN PAs are able to operate at higher voltages and frequencies, thereby reducing loss and improving power density (W/mm 2 ) [1].

关键词： Power generation HEMTs Frequency measurement Gallium nitride Scattering parameters Semiconductor device measurement Impedance

来源：评论

学校读者我要写书评

暂无评论

没有更多数据了...

全选清除本页清除全部题录导出标记到“检索档案”

共21页 << < 8 9 10 11 12 13 14 15 16 17 > >>

检索报告对象比较合并检索0

隐藏清空

合并搜索

回到顶部

执行限定条件

内容：

评分：

请选择保存的检索档案：

请选择收藏分类：

订阅名称：

通借通还

温馨提示：

图书名称：

借书校区：

取书校区：

手机号码：

邮箱地址：

一卡通帐号：

电话和邮箱必须正确填写，我们会与您联系确认。

联系人：

所在院系：

联系邮箱：

联系电话：

内蒙古自治区呼和浩特市赛罕区大学西街235号邮编: 010021

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：