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第十七届全国化合物半导体材料微波器件和光电器件学术会议

作者： Jinyu Ni Cen Kong Jianjun Zhou Xun Dong Zhonghui Li Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China

A 1.9-μm-thick GaN high electron mobility transistors (HEMT) structure has been grown on 3-inch Si (111) substrate by metalorganic chemical vapor *** using an AIN buffer layer and two AI-content step-graded AIGaN transition layers and optimizing the growth conditions,the GaN HEMT structure shown excellent electrical properties with flat film surface and good GaN crystalline quality.A sheet resistance of 328 Ω/□□ and sheet electron density of 1155 × 1013 cm-2,resulting in an electron mobility of 1650 cm2/Vs,was measured on the GaN HEMT *** GaN HEMTs were successful fabricated on this structure.A maximum drain-gate breakdown voltage BVGmax of 320 V and a maximum drain current IDSmax of 2.2 A were obtained.

关键词： GaN Si substrate HEMT Power electronic device Transition Layers

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A Heterogeneous Integration of GaAs Schottky Barrier Diode to Quartz Substrate Using Micro Transfer-Printing

A Heterogeneous Integration of GaAs Schottky Barrier Diode t...

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Asia Communications and Photonics Conference and Exhibition (ACP)

作者： Yuxuan Wang Kunpeng Dai Bin Niu Yuechan Kong Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing Electronic Devices Institute Nanjing China

Gallium Arsenide Schottky barrier diodes (GaAs SBDs) are widely used in terahertz (THz) applications. Quartz substrate has recently emerged as a promising platform for GaAs SBDs due to its intrinsically low permittivity under THz. Here, we demonstrate transferring of GaAs SBD active layers with electrodes to a quartz wafer using micro-transfer printing method. This allows as a versatile approach for future THz mixers and multipliers.

关键词： Printing Fabrication Electrodes Schottky diodes Gallium arsenide Schottky barriers Multichip modules

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A 52.5GHz-66GHz High Conversion Gain Frequency Tripler using $.13\mu \text{m SiGe}$ HBT process

A 52.5GHz-66GHz High Conversion Gain Frequency Tripler using...

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IEEE International Wireless Symposium (IWS)

作者： Lu Yuxiang Li Zekun Yu Jiayang Li Huanbo Zhou Peigen Lu Haiyan Chen Jixin State Key Laboratory of Millimeter Wave Southeast University Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory

ISBN: (数字)9781665481977

ISBN: (纸本)9781665485838

A 52.5GHz-66GHz frequency tripler using $0.13\mu\mathrm{m}$ SiGe HBT process is presented, which adopts a single balanced structure, with a high conversion gain up to 14.3dB. A maximum saturated output power $(\mathrm{P}_{\text{sat}})$ up to 12.3dBm@57GHz is measured, with a 3-dB bandwidth of 13.5GHz (22.7 % relative bandwidth). A folded marchand balun is applied to transform single-end signals into differential ones, with an amplitude difference less than 0.5dB and a phase difference within $180\pm 6$ degrees. A gain enhancing technique is also adopted. The chip size is $620\mu\mathrm{m}\times 200\mu\mathrm{m}$ without pads and $880\mu\mathrm{m}\times520\mu\mathrm{m}$ altogether.

关键词： Harmonics suppression Power measurement Baluns Power amplifiers Bandwidth Frequency conversion Heterojunction bipolar transistors

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A 18-40GHz 10W GaN Power Amplifier MMIC Utilizing Combination of the Distributed and Reactive Matching Topology

A 18-40GHz 10W GaN Power Amplifier MMIC Utilizing Combinatio...

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European (Formerly European Gallium Arsenide and Other Semiconductors Application Symposium - EGASS) Microwave integrated circuit Conference (EuMIC)

作者： Cheng-Hao Han Hong-Qi Tao Science and Technology on Monolithic integrated and modules Laboratory Nanjing Electronic Devices Institute Nanjing P.R. China

This paper describes the design and measured performance of a 18-40GHz 10W power amplifier (PA) MMIC utilizing combination of the distributed and reactive matching topology fabricated with an advanced 0.15μm Gallium Nitride (GaN) HEMT technology process. At the output stage of the power amplifier, reactive matching is used for better output power and power added efficient (PAE) design. To increase the gain and optimize the input return loss, distributed amplifier has been adopted at the input stage. The power amplifier MMIC demonstrates 10-18 W output power, over 12dB power gain and PAE of 15-27% over 18-40 GHz band under 20V drain bias. The chip is compact with the size of 3.2×2.8 mm 2 and it delivers an average output power density 1.52 W/mm 2 over the chip area. To the best of our knowledge, the pout, PAE and power density are highest among the published work for K/Ka-band PA MMICs.

关键词： Power amplifiers Power generation Gallium nitride Topology Wideband Gain Impedance

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On-wafer deembeedding techniques with application to HEMT devices characterization

On-wafer deembeedding techniques with application to HEMT de...

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International Conference on Solid-State and integrated circuit technology

作者： Haiyan Lu Weibo Wang Jianjun Zhou Tangshen Chen Chen Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing Electronic Device Institute Nanjing China

ISBN: (纸本)9781479932849

Two different deembedding methods, including open-short method and open-short-load+c deembedding method are discussed in this paper. These deembedding techniques are used to remove all parasitic elements of the device. Comparisons between open-short-load+c and open-short method were made using measured and simulated data on InP HEMT. The results indicate that better accuracy is achieved using open-short-load+c method on high frequency.

关键词： Frequency measurement Abstracts Q measurement Measurement uncertainty Mixers

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InAlN/AlN/GaN HEMTs on sapphire substrate

InAlN/AlN/GaN HEMTs on sapphire substrate

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International Conference on Microwave and Millimeter Wave technology Proceedings

作者： H. Q. Liu J. J. Zhou X. Dong T. S. Chen C. Chen National Science and Technology Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute Nanjing China

High quality InAlN/AlN/GaN heterostructure is grown by metal organic chemical deposition (MOCVD) on sapphire substrate. A high two-dimensional electron gas (2DEG) density of 2.5×10 13 cm -2 was measured in this structure. To character the electric property of this heterostructure, a 1-μm-long gate InAlN/AlN/GaN high-electron mobility transistors (HEMTs) were fabricated. A maximum output current density of 1.19 A/mm and a peak extrinsic transconductance of 240 mS/mm were measured with the InAlN/AlN/GaN HEMTs. Compare to the normal AlGaN/AlN/GaN HEMTs, the maximum current density and transconductance is greatly improved due to the high 2DEG density and thin barrier layer.

关键词： Gallium nitride HEMTs MODFETs Density measurement Current density Transconductance Organic chemicals MOCVD Electrons Current measurement

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Design of 26-40 GHz 17 W GaN-based Balanced Power Amplifier MMIC

Design of 26-40 GHz 17 W GaN-based Balanced Power Amplifier ...

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International Conference on Microwave and Millimeter Wave technology Proceedings

作者： Hong-Qi Tao Bin Zhang Qiang Zhou Jun-Da Yan Science and Technology on Monolithic Integrated and Modules Laboratory Nanjing Electronic Devices Institute Nanjing P.R. China

A wideband 26-40 GHz 17 W GaN power amplifier (PA) utilizing 0.15 μm gallium nitride (GaN) high electron mobility transistor (HEMT) technology is presented in this letter. The MMIC is designed with balanced architecture to achieve low input/output return loss and reduce the load-pull effect on the performance degradation. A novel design method of optimizing load impedance of the Lange Coupler is presented, which solved the conflict between microwave performance and process design rules. The MMIC is designed with the load-pull method, with the final stage matched to compromise between output power and power added efficiency (PAE). An output power of more than 42 dBm and a power added efficiency of more than 15% over the band of 26-40 GHz under a drain voltage of 20 V at CW mode have been achieved. The chip size is 3.5 mm ×5.3 mm (18.55 mm 2 ).

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An InP DHBT 140 GHz-165 GHz Amplifier

An InP DHBT 140 GHz-165 GHz Amplifier

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IEEE International Conference on Communication Problem-Solving

作者： Sun Yan Cheng Wei Li Ou Peng Lu Hai Yan Li Xiao Wang Yuan Niu Bin Scienceand Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Fundamental Science on EHF Laboratory University of Electronic Science and Technology of China

ISBN: (纸本)9781467365451

We present a compact, 3-stage millimeter-wave monolithic integrated circuit (MMIC) amplifier with an operating frequency of 140-165 GHz, formed by common-emitter configured 0.5 μm InP DHBTs and a multilayer thin-film microstrip (TFM) wiring environment. The amplifier smallsignal gain exhibits >5 dB from 140 GHz-165 GHz. The peak gain is 11 dB at 140 GHz. This is the first time reported InP DHBT MMIC amplifier operating in D-band employing TFM in china. The total size of this 3-stage amplifier is only 1.04 mm×0.88 mm.

关键词： Indium phosphide (InP) Heterojunction bipolar transistors (HBTs) Millimeter-wave monolithic integrated circuit (MMIC) Amplifier D-band Thin-film microstrip (TFM)

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Design of a 340 GHz GaN-Based Frequency Doubler with High Output Power

Design of a 340 GHz GaN-Based Frequency Doubler with High Ou...

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IEEE Asia-Pacific Conference on Antennas and Propagation (APCAP)

作者： Yiyuan Zheng Kai Zhang Kunpeng Dai Yuechan Kong Gang Lin Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing Electronic Devices Institute Nanjing China

This paper presents a high-power 340 GHz frequency doubler based on GaN Schottky barrier diode (SBD) technology. The proposed frequency doubler consists of a pair of GaN SBDs chips, a quartz circuit, as well as the transition waveguides. To improve the power handling capabilities, a pair of GaN SBDs chips with six anodes in total is flip-chip mounted on the quartz circuit. The suspended microstrip line is employed in the circuit on quartz due to its low-attenuation characteristics at terahertz frequencies. To enhance the electrical performance of frequency doubler, low-loss transition structures are designed. The proposed frequency doubler shows a simulated output power of 300 mW with a conversion efficiency of 20% at 340 GHz.

关键词： Waveguide transitions Schottky diodes Filtering Schottky barriers Frequency conversion Scattering parameters Microstrip

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Study of small signal of 4H-SIC static induction transistor

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Telkomnika - Indonesian Journal of Electrical Engineering 2013年第5期11卷 2838-2844页

作者： Chen, Gang Lu, Yang Li, Li Bai, Song Li, Yun Lu, Haiyan Science and Technology on Monolithic Integrated Circuits and Modules Laboratory China Nanjing Electronic Devices Institute Nanjing 210016 China

Silicon carbide (SiC) SITs were fabricated using home-grown epi structures. The gate is a recessed gate - bottom contact (RG - B). We designed that the mesa space 2.5 μm and the gate channel is 1.5 μm. One cell has 400 source fingers and each source finger width is 50 μm. 0.5 mm gate periphery SiC SIT yielded a maximum drain current density of 160 mA/mm at a drain voltage of 80 V and a gate voltage of 2.5 V. The device blocking voltage with a gate bias of -16 V was 400 V. Packaged 0.5-mm devices were evaluated using amplifier circuits designed for class AB operations. Small signal of SIT was studied. the maximum stable gain (MSG) were 11.2 dB at 500MHz and 7.85 dB at L band 1 GHz with Vds = 80V and Vg = 2V. ©2013 Universitas Ahmad Dahlan.

关键词： Silicon carbide

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