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IEEE Electron Devices technology and Manufacturing Conference (EDTM)

作者： Hehe Gong Xinxin Yu Yang Xu Jianjun Zhou Fangfang Ren Shulin Gu Rong Zhang Jiandong Ye School of Electronic Science and Engineering Nanjing University Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China

In this work, vertical NiO/Ga2O3 heterojunction diodes (HJDs) have been demonstrated with the integrated SiNx/Al2O3 double-layered insulating field plate (FP) structure. With the optimal post annealing, the device per... 详细信息

In this work, vertical NiO/Ga₂O₃ heterojunction diodes (HJDs) have been demonstrated with the integrated SiN_x/Al₂O₃ double-layered insulating field plate (FP) structure. With the optimal post annealing, the device performance has been improved with a decreased differential specific on-resistance (R_on,sp), a decreased reverse leakage current density and the elimination of double barrier behavior in forward bias condition, which is due to the reduced interface defects produced by the plasma damage of fabricated process. Our work provides an optimized way for the heterojunction devices based on Ga₂O₃ material to solve the difficulty of p-type Ga₂O₃.

关键词： Performance evaluation Fabrication Electric potential Annealing Heterojunctions Plasmas Leakage currents

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A Simple Method to Accurately Determine the Temperature Dependence of Thermal Resistance of InP HBTs

A Simple Method to Accurately Determine the Temperature Depe...

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2012 IEEE 11th International Conference on Solid-State and integrated circuit technology(ICSICT-2012)

作者： Jun Liu Wei Cheng Lin Zhang Haiyan Lu Chunlin Han Key Laboratory for RF Circuits and Systems of Ministry of Education Hangzhou Dianzi University Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

ISBN: (纸本)9781467324748

A simple method to accurately determine the nonlinear dependence of the thermal resistance of heterojunction bipolar transistors（HBTs）on ambient and junction temperatures is presented.A nonlinear model of the thermal resistance dependence on the power dissipation is introduced for the actual junction temperature *** method is demonstrated by an accurate extraction of thermal effects of a power HBT with an effective emitter area of 1×15μm2,fabricated with an in-house InP HBT technology.

关键词： Heterojunction Bipolar Transistor thermal resistance model extraction

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An Aging Small-signal Modeling Method of Microwave Transistors Using GA-ELM Neural Network

An Aging Small-signal Modeling Method of Microwave Transisto...

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Electronics Design Automation (ISEDA), International Symposium of

作者： Lin Cheng Hongliang Lu Xiuxiu Guo Silu Yan Wei Cheng Yuming Zhang School of Microelectronics Xidian University Xi'an China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China

In this paper, an aging small-signal S-parameters modeling method for microwave transistors is explored using a genetic algorithm (GA) to optimize the Extreme Learning Machine (ELM) neural network. A dual GA-ELM neural network architecture was used to simulate the fresh S-parameters of InP heterojunction bipolar transistor (HBT) devices and the degradation of S-parameters after accelerated aging, respectively. Good agreement was achieved between measured and predicted results of the fresh and aging S-parameters within a frequency range of 0.1 to 40 GHz.

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A 1.9-kV/2.61-m${\text{m}}\Omega\cdot$ cm2 Lateral GaN Schottky Barrier Diode on Silicon Substrate With Tungsten Anode and Low Turn-ON Voltage of 0.35 V

IEEE Electron Device Letters

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IEEE Electron Device Letters 2018年第10期39卷 1548-1551页

作者： Tao Zhang Jincheng Zhang Hong Zhou Tangsheng Chen Kai Zhang Zhuangzhuang Hu Zhaoke Bian Kui Dang Yi Wang Li Zhang Jing Ning Peijun Ma Yue Hao Key Laboratory of Wide Band Gap Semiconductor Materials and Devices School of Microelectronics Xidian University Xi’an China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China

In this letter, we report the achievement of a high-performance lateral GaN Schottky barrier diode (SBD) on a silicon substrate with a low turn-ON voltage (V ON ) of 0.35 V and tungsten (W) as the anode. Non-field-plated lateral GaN SBDs with the anode-cathode distances (L AC ) of 6, 10, 15, 20, and 25 μm demonstrate the reverse breakdown voltages of 0.6, 1.1, 1.25, 1.5, and 1.9 kV with the differential specific ON-resistances (R ON , sp ) of 0.38, 0.72, 1.23, 1.87, and 2.61 mΩ·cm 2 , respectively. The power figure-of-merit (FOM) is calculated to be 1×10 3 , 1.7×10 3 , 1.3×10 3 , 1.2×10 3 , and 1.4×10 3 MW/cm 2 . To the best of our knowledge, this FOM of 1.7×10 3 MW/cm 2 is the highest among all the lateral GaN SBDs on a Si substrate. Combined with the ~10 8 current ON/OFF ratio at room temperature, the GaN SBD with the W anode shows a great promise for next-generation power electronics.

关键词： Gallium nitride Anodes Current density Silicon Wide band gap semiconductors Aluminum gallium nitride Schottky barriers

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Nondestructive visualization of graphene on Pt with methylene blue surface modification

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science China Materials 2022年第10期65卷 2763-2770页

作者： He Kang Yanhui Zhang Yun Wu Shike Hu Jing Li Zhiying Chen Yanping Sui Shuang Wang Sunwen Zhao Runhan Xiao Guanghui Yu Songang Peng Zhi Jin Xinyu Liu State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Device InstituteNanjing 210016China Microwave Devices and Integrated Circuits Department Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China

Efficient large-scale nondestructive quality assessment of graphene on Pt is essential to the in-depth growth research and practical applications of ***,we present a very simple method for directly observing the domains and defects in graphene on Pt using an ordinary optical *** was achieved by modifying graphene on Pt using methylene blue(MB).Because the chemical activities of graphene and Pt surface differ significantly,the adsorption and reaction of MB on graphene and platinum surface *** can determine the distribution of graphene crystal domains and defects by comparing the colors in the optical *** addition,this characterization method causes no obvious damage to the Pt substrate and ***,it does not affect the recycling of the substrate or the subsequent characterization or application of *** study provides a nondestructive method for measuring the quality of graphene on Pt on a large scale,as well as a reference for the characterization and doping of other two-dimensional materials.

关键词： graphene Pt nondestructive visualization surface modification methylene blue

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An improved through line de-embedding method with even-odd mode measurement

An improved through line de-embedding method with even-odd m...

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IEEE International Workshop on Radio-Frequency Integration technology (RFIT)

作者： Oupeng Li Wei Cheng Lei Wang Haiyan Lu Ruimin Xu Fundamental Science on EHF Laboratory University of Electronic Science and Technology of China Chengdu P. R. China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing P. R. China

This paper presents a new S-parameter matrix calculation based de-embedding methodology. In this method, a noval even-odd mode measurement is proposed to correct the error in traditional through line de-embedding methodology. The influence of the asymmetric input and output stub is canceled. A comparison of the different de-embedding methods for active device (0.7 μm InP DHBT) are performed up to 66 GHz, the results showed that the proposed method has good accuracy and suitable for millimeter-wave (mmWave).

关键词： Scattering parameters Silicon compounds Semiconductor device measurement Indium phosphide Periodic structures Transmission line measurements Probes

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A 0.33THz Schottky diode frequency doubler with 8% efficiency and 5.4mW output power

A 0.33THz Schottky diode frequency doubler with 8% efficienc...

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IEEE Asia-Pacific Conference on Antennas and Propagation (APCAP)

作者： Changfei Yao Ming Zhou Yunsheng Luo Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing Jiangsu China Department of Microwave and Millimeter Wave Modules Nanjing Electronic Devices Institute Nanjing Jiangsu China

ISBN: (纸本)9781479943531

A 0.33THz frequency doubler is realized with planar Schottky diodes, and the diode is mounted on 50 μm thick quartz substrate. The complete multiplying circuit is optimized and established in 3-D electromagnetic simulation suite. The doubler is self-bias and fixed-tuned. The highest tested multiplying efficiency is 8% and its corresponding output power is 5.4mW with input power of 68mW at 328GHz. The typical measured efficiency is 6% in frequency band 320-358GHz. To the authors' knowledge, these results are comparable to reported frequency doubler performance around 330GHz with integrated diode technology.

关键词： Schottky diodes Power generation Substrates Microwave circuits Electromagnetic waveguides integrated circuit modeling Gold

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W-band InP DHBT MMIC Power Amplifier

W-band InP DHBT MMIC Power Amplifier

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International Conference on Computational Problem-Solving (ICCP)

作者： Guohua Gu Lei Wang Weibo Wang Wei Cheng Yuan Wang Haiyan Lu Oupeng Li Jian Zhang Yong Zhang Fundamental Science on EHF Laboratory University of Electronic Science and Technology of China Chengdu P. R. China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing P. R. China

ISBN: (纸本)9781479942442

In this paper, a monolithic W-band Power amplifier (PA) is presented by using 1μm InP/InGaAs/InP double heterojunction bipolar transistor (DHBT) technology. The PA is consisted by 2 stages 2×1μm and 3 stages 4×1μm emitter width transistors. The total circuit shows small signal gain is above 15dB from 90GHz to 96GHz, and the simulated saturation output power reaches 18.5dBm@94GHz. The chip area is only 1.61mm×1.03mm. This W-band power amplifier MMIC is now being fabricated in progress on the NEDI compound semiconductor process line.

关键词： Indium phosphide Power amplifiers DH-HEMTs MMICs Heterojunction bipolar transistors integrated circuit modeling

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An improved AgilentHBT model for InP DHBT

An improved AgilentHBT model for InP DHBT

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Asia-Pacific Conference on Microwave

作者： Oupeng Li Lei Wang Wei Cheng Haiyan Lu Guohua Gu Jian Zhang Ruimin Xu Fundamental Science on EHF Laboratory University of Electronic Science and Technology of China Chengdu P. R. China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing P. R. China

In this paper, an improved InP/InGaAs DHBT large-signal model based on the AgilentHBT model is reported. The collector current model is modified for the consideration of hetero-junction effect, and especially, a dispersion current item is put forward and incorporated into the equivalent circuit. The proposed model is implemented by the use of symbolically-defined devices (SDD) in ADS software. The excellent fitting results in DC and s-parametmers indicate that the modified model has better accuracy compared to the conventional one.

关键词： Microwave circuits Microwave integrated circuits Microwave transistors Decision support systems Noise measurement Radiofrequency integrated circuits

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Analysis on the Effect of Laval Microchannel Structure in Si Interposer for GaN HEMTs Cooling

Analysis on the Effect of Laval Microchannel Structure in Si...

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International Conference on (ICEPT) Electronic Packaging technology

作者： Miao Yu Jian Zhu Min Huang Hongze Zhang School of Electronic Science and Engineering Nanjing Electronic Devices Institute Nanjing University Nanjing China School of Electronic Science and Engineering Nanjing Electronic Devices Institute Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing University Nanjing China Electronic Science and Engineering Nanjing Electronic Devices Institute Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing Electronic Devices Institute Nanjing China

ISBN: (数字)9781728168265

ISBN: (纸本)9781728168272

The microfluid cooling is widely used in the thermal management for high power integration in 3D Si RF microsystem. The simple and efficient microfluid structure is essential in large area cooling for the module with multiple active devices integrated on silicon. A novel Laval microchannel structure was proposed in this paper, and it was simple to design and easy for process. The thermal and hydraulic characteristics of Laval microchannel were investigated and compared with the conventional straight microchannel and 2 kinds of common serpentine microchannels using FEM analysis. The results indicated that Laval microchannel had low flow resistance to maintain high pumping power and achieved the best cooling performance among different microchannel structures. And Laval structure can be effective to keep junction temperature below 150 °C which can provide the sufficient condition for GaN HEMTs device operating with high efficiency and good linearity. It presented remarkable cooling performance for GaN HEMTs cooling integrated on Si, showing excellent candidate structure for large area cooling in 3D Si RF microsystem.

关键词： Microchannels Gallium nitride Silicon HEMTs MODFETs Cooling Junctions

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