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检索条件"机构=Science and Technology on Monolithic Integrated Circuit and Modules Laboratory"
201 条 记 录,以下是151-160 订阅
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High breakdown voltage GaN HEMT device fabricated on self-standing GaN substrate
High breakdown voltage GaN HEMT device fabricated on self-st...
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2013 International Conference on Precision Mechanical Instruments and Measurement technology, ICPMIMT 2013
作者: Zhou, Jian Jun Li, Liang Lu, Hai Yan Kong, Ceng Kong, Yue Chan Chen, Tang Sheng Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing 210016 China
In this letter, a high breakdown voltage GaN HEMT device fabricated on semi-insulating self-standing GaN substrate is presented. High quality AlGaN/GaN epilayer was grown on self-standing GaN substrate by metal organi... 详细信息
来源: 评论
Simulation, fabrication and characterization of 4500v 4H-SiC normallyoff VJFET
Simulation, fabrication and characterization of 4500v 4H-SiC...
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2013 International Conference on Precision Mechanical Instruments and Measurement technology, ICPMIMT 2013
作者: Huang, Run Hua Chen, Gang Bai, Song Li, Rui Li, Yun Tao, Yong Hong Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing Electronic Devices Institute Nanjing China
Simulation, Fabrication and characteristics of high voltage, normally-off JFETs in 4HSiC are presented. The devices were built on ND= 1.0×1015 cm-3 doped 50μm thick n-type epilayer grown on a n+ 4H-SiC. Paramete... 详细信息
来源: 评论
Fabrication of L band 4H-SiC SiT devices
Fabrication of L band 4H-SiC SiT devices
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2013 International Conference on Precision Mechanical Instruments and Measurement technology, ICPMIMT 2013
作者: Chen, Gang Jiang, Hao Zhong, Shi Chang Bai, Song Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing 210016 China Nanjing Electronic Device Institute Nanjing 210016 China
Silicon carbide (SiC) static induction transistors (SITs) were fabricated using homegrown epi structures. The gate is a recessed gate - bottom contact (RG - B). The mesa space designed is 2.5 μm and the gate channel ... 详细信息
来源: 评论
Study on transient thermal resistance of microwave pulse power device
Study on transient thermal resistance of microwave pulse pow...
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2013 International Conference on Precision Mechanical Instruments and Measurement technology, ICPMIMT 2013
作者: Ding, Xiao Ming Chen, Gang Wang, Dian Li Nanjing Electronic Device Institute Nanjing 210016 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing 210016 China
Wherever possible, we have adopted the newest modern technology. The Au-Si binary alloy sintered chips are silicon or silicon carbide power devices. The sintered temperature is 380 to 390°C. Using micro-infrared ... 详细信息
来源: 评论
Direct extraction method of InP HBT small-signal model
Direct extraction method of InP HBT small-signal model
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2013 International Conference on Precision Mechanical Instruments and Measurement technology, ICPMIMT 2013
作者: Lu, Hai Yan Cheng, Wei Chen, Gang Chen, Tang Sheng Chen, Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing 210016 China Nanjing Electronic Device Institute Nanjing 210016 China
An accurate method for extracting the elements of InP HBT small-signal model parameters is proposed in this paper. The method can accurately resolve the most important internal parameters from the measured S-parameter... 详细信息
来源: 评论
A 42 to 56GHz wide band CMOS power amplifier
A 42 to 56GHz wide band CMOS power amplifier
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2013 6th UK, Europe, China Millimeter Waves and THz technology Workshop, UCMMT 2013
作者: Yan, Pinpin Chen, Jixin Hong, Wei Jiang, Xin State Key Laboratory of Millimeter Waves School of Information Science and Engineering Southeast University Nanjing 210096 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing 210016 China
A wide band power amplifier is designed by using 90nm CMOS process. By proper arrangement of frequency response among circuit stages, the amplifier exhibit maximum gain of 15dB at 47-48GHz and 3dB bandwidth from 42 to... 详细信息
来源: 评论
Study on 2000V SiC JBS Diodes
Study on 2000V SiC JBS Diodes
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2013 3rd International Conference on Electric and Electronics(EEIC 2013)
作者: Gang Chen Lin Wang Runhua Huang Song Bai Yun Li Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute
High voltage 4H-SiC Ti schottky junction barrier schottky(JBS) diode with breakdown voltage of 2000 V and forward current of 2A has been fabricated. A low reverse leakage current below 1.9×10A/cm at the bias vo... 详细信息
来源: 评论
107W CW SiC MESFET with 48.1% PAE
107W CW SiC MESFET with 48.1% PAE
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2013 IEEE 5th International Symposium on Microwave,Antenna,Propagation and EMC Technologies for Wireless Communications
作者: Yonghong Tao Song Bai Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute
In the paper,30mm high-power SiC MESFETs have been *** load-pull testing at 1.5 GHz and 48V drain to source voltage,packaged 2 ×30mm SiC MESFET transistors were demonstrated with output power higher than 107W wit... 详细信息
来源: 评论
Research and Implementation of 150W SiC Internally Match and Power Combiner at S Band
Research and Implementation of 150W SiC Internally Match and...
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2013 IEEE 5th International Symposium on Microwave,Antenna,Propagation and EMC Technologies for Wireless Communications
作者: Gang Chen Shichang Zhong Yuchao Li Song Bai Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute
As one of the third generation semiconductor materials,SiC has many advantages,such as high-power,high gate-drain breakdown voltage,heat stability and anti-radiation *** it is of high value for study and application *... 详细信息
来源: 评论
Application of 1200V-8A SiC JBS diodes in the motor system
Application of 1200V-8A SiC JBS diodes in the motor system
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2013 International Conference on Precision Mechanical Instruments and Measurement technology, ICPMIMT 2013
作者: Liu, Ao Chen, Gang Bai, Song Li, Rui Sun, Wei Feng Nanjing Electronic Device Institute Nanjing 210016 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing 210016 China National ASIC System Engineering Research Center Southeast University Nanjing 210096 China
1200V-8A 4H-SiC junction barrier schottky (JBS) diodes were designed and fabricated based on in-house SiC epitaxy and device technology. As a free-wheeling diode for the IGBT in inverter of motor system, the 1200V SiC... 详细信息
来源: 评论