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检索条件"机构=Science and Technology on Monolithic Integrated Circuit and Modules Laboratory"
201 条 记 录,以下是161-170 订阅
排序:
Study on Fabrication and Fast Switching of High Voltage SiC JFET
Study on Fabrication and Fast Switching of High Voltage SiC ...
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2013 International Conference on Solar Energy Materials and Energy Engineering(SEMEE 2013)
作者: Gang Chen Song Bai Runhua Huang Yonghong Tao Ao Liu Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute
SiC devices have excellent properties such as ultra low loss, high withstand voltage, large capacity, high frequency, and high temperature operation compared with Si devices. The SiC JFET is expected to be appropriate... 详细信息
来源: 评论
Progress of High Voltage Trenched and Implanted 4H-SiC Vertical JFET
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Energy and Power Engineering 2013年 第4期5卷 1284-1287页
作者: Gang Chen Song Bai Yonghong Tao Yun Li 1Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China 2Nanjing Electronic Devices Institute Nanjing China Nanjing Electronic Devices Institute Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China
A silicon carbide (SiC) vertical channel junction field effect transistor (VJFET) was fabricated based on in-house SiC epitaxial wafer with trenched and implanted method. Its forward drain current is in excess of 3.12... 详细信息
来源: 评论
Study of small signal of 4H-SIC static induction transistor
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Telkomnika - Indonesian Journal of Electrical Engineering 2013年 第5期11卷 2838-2844页
作者: Chen, Gang Lu, Yang Li, Li Bai, Song Li, Yun Lu, Haiyan Science and Technology on Monolithic Integrated Circuits and Modules Laboratory China Nanjing Electronic Devices Institute Nanjing 210016 China
Silicon carbide (SiC) SITs were fabricated using home-grown epi structures. The gate is a recessed gate - bottom contact (RG - B). We designed that the mesa space 2.5 μm and the gate channel is 1.5 μm. One cell has ... 详细信息
来源: 评论
A Substitution for the High-κ Dielectric in an AlGaN/GaN Metal-insulator-Semiconductor Heterostructure
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Chinese Physics Letters 2012年 第5期29卷 225-228页
作者: KONG Yue-Chan XUE Fang-Shi ZHOU Jian-Jun LI Liang CHEN Chen JIANG Wen-Hai Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices InstituteNanjing 210016
Paraelectric state ferroelectric material is proposed as a novel substitution for the conventional high-k dielectric used in AlGaN/GaN metal-insulator-semiconductor (MIS) field-effect *** superior potential for improv... 详细信息
来源: 评论
High breakdown voltage InGaAs/InP double heterojunction bipolar transistors with f_(max)=256 GHz and BV_(CEO)= 8.3 V
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Journal of Semiconductors 2012年 第1期33卷 56-58页
作者: Cheng Wei Zhao Yan Gao Hanchao Chen Chen Yang Naibin Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing 210016China
An InGaAs/InP DHBT with an InGaAsP composite collector is designed and fabricated using triple mesa structural and planarization technology. All processes are on 3-inch wafers. The DHBT with an emitter area of 1×... 详细信息
来源: 评论
Millimeter-wave fixed-tuned subharmonic mixers with planar Schottky diodes
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Journal of Semiconductors 2012年 第11期33卷 95-99页
作者: 姚常飞 周明 罗运生 王毅刚 许从海 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Department of Microwave and Millimeter Wave Modules Nanjing Electronic Devices Institute
Two different frequency bandwidth subharmonic mixers(SHM) using planar Schottky mixing diodes are discussed and ***-wave analysis is carried out to find the optimum diode embedding impedances with a lumped port for ... 详细信息
来源: 评论
Improvement of low temperature GaN Interlayer on the property of the two-dimensional electron gas in AlGaN/GaN heterostructure
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Rengong Jingti Xuebao/Journal of Synthetic Crystals 2013年 第7期42卷 1406-1409页
作者: Zhang, Dong-Guo Li, Zhong-Hui Peng, Da-Qing Dong, Xun Li, Liang Ni, Jin-Yu Science and Technology of Monolithic Integrated and Modules Circuits Laboratory Nanjing Electronic Devices Institute Nanjing 210016 China
The AlGaN/GaN two-dimensional electron gas material on sapphire substrate was grown by low-pressure MOCVD method, and the influence of the 2DEG transport property from the low-temperature GaN layer which was inserted ... 详细信息
来源: 评论
A novel circuit architecture for fourth subharmonic mixers
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Journal of Semiconductors 2012年 第6期33卷 56-60页
作者: 姚常飞 许从海 周明 罗运生 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Research Department of Microwave and Millimeter Wave Modules in Aerospace Nanjing Electronic Devices Institute
A circuit topology for high-order subharmonic(SH) mixers is *** phase cancellation of idle frequency components,the SH mixer circuit can eliminate the complicated design procedure of idle frequency ***,the SH mixer ... 详细信息
来源: 评论
5A 1300V trenched and implanted 4H-SiC vertical JFET
5A 1300V trenched and implanted 4H-SiC vertical JFET
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4th International Conference on Mechanical and Electrical technology, ICMET 2012
作者: Chen, Gang Song, Xiaofeng Bai, Song Li, Li Li, Yun Chen, Zheng Wang, Wen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China
A silicon carbide (SiC) vertical channel junction field effect transistor (VJFET) was fabricated based on in-house SiC epitaxial wafer with lift-off trenched and implanted method. Its blocking voltage exceeds 1300V at... 详细信息
来源: 评论
Developing the Ka-band GaN power HEMT devices
Developing the Ka-band GaN power HEMT devices
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2012 5th Global Symposium on Millimeter-Waves, GSMM 2012
作者: Zhou, J.J. Dong, X. Kong, C. Kong, Y.C. Ren, C.J. Li, Z.H. Chen, T.S. Chen, C. Zhang, B. Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China
High quality Al0.3Ga0.7N/GaN/Al0.04Ga 0.96N double heterostructure was grown by metal-organic chemical vapor deposition (MOCVD). Two kinds of fabrication technology of Ka band GaN HEMT devices were developed. Using de... 详细信息
来源: 评论