SiC devices have excellent properties such as ultra low loss, high withstand voltage, large capacity, high frequency, and high temperature operation compared with Si devices. The SiC JFET is expected to be appropriate...
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SiC devices have excellent properties such as ultra low loss, high withstand voltage, large capacity, high frequency, and high temperature operation compared with Si devices. The SiC JFET is expected to be appropriate for the power device because a JFET has no oxide-semiconductor interface in the channel region and does not use the low mobility SiC MOSFET inversion layer as a channel. Forward I-V up to 4A for SiC VJFET, Gate voltage from 2V to 3.5V by step 0.5V. Reverse Ⅰ-Ⅴ characteristics up to 4500V(VG=-8V) for SiC VJFET, Gate voltage from -4V to -8V by step -2V. Turn-off characteristics are studied and fast turn-off time of 136 ns at room temperature under DC voltage of 600 V is successfully demonstrated.
A silicon carbide (SiC) vertical channel junction field effect transistor (VJFET) was fabricated based on in-house SiC epitaxial wafer with trenched and implanted method. Its forward drain current is in excess of 3.12...
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A silicon carbide (SiC) vertical channel junction field effect transistor (VJFET) was fabricated based on in-house SiC epitaxial wafer with trenched and implanted method. Its forward drain current is in excess of 3.12 A (170 W/cm2) with a current gain of ID/IG = 19746 at gate bias VG = 3 V and drain bias VD = 5.5 V. The SiC VJFET device’s related specific on-resistance 54 mΩ·cm2. The BV gain is 250 V with Vg from -10 V to -4 V and is 350 V with Vg from -4 V to -2 V. Self-aligned floating guard rings provide edge termination that blocks 3180V at a gate bias of ?14 V and a drain-current density of 1.53 mA/cm2.
Silicon carbide (SiC) SITs were fabricated using home-grown epi structures. The gate is a recessed gate - bottom contact (RG - B). We designed that the mesa space 2.5 μm and the gate channel is 1.5 μm. One cell has ...
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Paraelectric state ferroelectric material is proposed as a novel substitution for the conventional high-k dielectric used in AlGaN/GaN metal-insulator-semiconductor (MIS) field-effect *** superior potential for improv...
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Paraelectric state ferroelectric material is proposed as a novel substitution for the conventional high-k dielectric used in AlGaN/GaN metal-insulator-semiconductor (MIS) field-effect *** superior potential for improving device transconductance is due to its unique switchable polar *** self-consistent calculation involving the switchable polarization of the paraelectric,the 2DEG properties and C-V characteristics are investigated and compared for the novel AlGaN/GaN metal-paraelectric-semiconductor (MPS) structure and an equivalent conventional MIS *** is shown that owing to the paraelectric polarization,the gate control of the 2DEG density is remarkably enhanced in the MPS structure and the gate capacitance is significantly improved with a smaller threshold *** self-consistent polarization of the paraelectric in the MPS structure is non-linsarly dependent on the saturated polarization,which implies an optimum saturated polarization of 5-10 μC/cm^(2) for the paraelectric.
An InGaAs/InP DHBT with an InGaAsP composite collector is designed and fabricated using triple mesa structural and planarization technology. All processes are on 3-inch wafers. The DHBT with an emitter area of 1×...
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An InGaAs/InP DHBT with an InGaAsP composite collector is designed and fabricated using triple mesa structural and planarization technology. All processes are on 3-inch wafers. The DHBT with an emitter area of 1×15 μm2 exhibits a current cutoff frequency ft = 170 GHz and a maximum oscillation frequency fmax = 256 GHz. The breakdown voltage is 8.3 V, which is to our knowledge the highest BVcEo ever reported for InGaAs/InP DHBTs in China with comparable high frequency performances. The high speed InGaAs/InP DHBTs with high breakdown voltage are promising for voltage-controlled oscillator and mixer applications at W band or even higher frequencies.
Two different frequency bandwidth subharmonic mixers(SHM) using planar Schottky mixing diodes are discussed and ***-wave analysis is carried out to find the optimum diode embedding impedances with a lumped port for ...
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Two different frequency bandwidth subharmonic mixers(SHM) using planar Schottky mixing diodes are discussed and ***-wave analysis is carried out to find the optimum diode embedding impedances with a lumped port for modeling the nonlinear *** SHM circuit is divided into several different parts and each part is optimized using the calculated diode *** divided parts are then combined and optimized *** exported S-parameter files of the global circuit are used for conversion loss(CL) *** the 150 GHz SHM,the lowest measured CL is 10.7 dB at 153 GHz,and typical CL is 12.5 dB in the frequency range of 135-165 *** lowest measured CL of the 180 GHz SHM is 5.8 dB at 240 GHz,and typical CL is 13.5 dB and 11.5 dB in the frequency range of 165-200 GHz and 210-240 GHz,respectively.
The AlGaN/GaN two-dimensional electron gas material on sapphire substrate was grown by low-pressure MOCVD method, and the influence of the 2DEG transport property from the low-temperature GaN layer which was inserted ...
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The AlGaN/GaN two-dimensional electron gas material on sapphire substrate was grown by low-pressure MOCVD method, and the influence of the 2DEG transport property from the low-temperature GaN layer which was inserted in the GaN growth was investigated. Properties of the samples were studied by AFM and Hall measurement. The results indicated that the LT-GaN interlayer could improve the roughness of the surface, and obviously raise the electron mobility in the 2DEG. Hall measurement revealed that the mobility of 2110 cm2/V·s at room temperature could be achieved when the growth temperature of LT-GaN was 860°C.
A circuit topology for high-order subharmonic(SH) mixers is *** phase cancellation of idle frequency components,the SH mixer circuit can eliminate the complicated design procedure of idle frequency ***,the SH mixer ...
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A circuit topology for high-order subharmonic(SH) mixers is *** phase cancellation of idle frequency components,the SH mixer circuit can eliminate the complicated design procedure of idle frequency ***,the SH mixer circuit can achieve a high port isolation by phase cancellation of the leakage LO, RF and idle frequency *** on the high-order SH mixer architecture,a new Ka-band fourth SH mixer is analyzed and designed,it shows the lowest measured conversion loss of 8.3 dB at 38.4 GHz and the loss is lower than 10.3 dB in 34-39 *** LO-IF,RF-LO,RF-IF port isolation are better than 30.7 dB,22.9dB and 46.5 dB,respectively.
A silicon carbide (SiC) vertical channel junction field effect transistor (VJFET) was fabricated based on in-house SiC epitaxial wafer with lift-off trenched and implanted method. Its blocking voltage exceeds 1300V at...
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High quality Al0.3Ga0.7N/GaN/Al0.04Ga 0.96N double heterostructure was grown by metal-organic chemical vapor deposition (MOCVD). Two kinds of fabrication technology of Ka band GaN HEMT devices were developed. Using de...
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