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International Conference on Computational Problem-Solving (ICCP)

作者： Oupeng Li Wei Cheng Lei Wang Haiyan Lu Ruimin Xu Fundamental Science on EHF Laboratory University of Electronic Science and Technology of China Chengdu P. R. China Science and Technology Monolithic Integrated Circuits Modules Laboratory Nanjing P. R. China

ISBN: (纸本)9781479942442

In this paper, a accuracy large-signal model based on agilentHBT model for InP dou-ble heterojunction bipolar transistors (DHBTs) is implemented as symbolically defined device (SDD) in Agilent ADS. The model accounts for most physical phenomena including the Kirk effect, soft knee effect, base collector capacitance and collector transit time. The validity and the accuracy of the large-signal model are assessed by comparing the simulation with the measurement of DC and multi-bias small S parameters for InP DHBTs.

关键词： Mathematical model integrated circuit modeling Indium phosphide Heterojunction bipolar transistors DH-HEMTs Equations Junctions

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Numerical Study on Microjet Cooling Structure for GaN HEMTs Integration on Silicon

Numerical Study on Microjet Cooling Structure for GaN HEMTs ...

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International Conference on (ICEPT) Electronic Packaging technology

作者： Miao Yu Jian Zhu Min Huang Hongze Zhang School of Electronic Science and Engineering Nanjing Electronic Devices Institute Nanjing University Nanjing China School of Electronic Science and Engineering Nanjing Electronic Devices Institute Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing University Nanjing China Electronic Science and Engineering Nanjing Electronic Devices Institute Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing Electronic Devices Institute Nanjing China

ISBN: (数字)9781728168265

ISBN: (纸本)9781728168272

An analysis on the heat transfer feature of the microfluid cooling based on the microjet structure in the Si interposer for GaN HEMTs was investigated to meet the requirement of thermal management in RF microsystem integration. The microjet cooling structure in the Si interposer consists of 2 layers of microfluids forming the microjets in the bottom layer and separating in the top layer from 2 directions. The GaN HEMTs device is bonded on the Si interposer with the transistor gates above the microjets to utilize the high local heat transfer coefficient effectively. The distributions of temperature and the maximum pressure variations in the cooling structure with different size parameters at different flow rates were investigated using FEM analysis, and the optimum relations of dominant parameters were proposed to achieve excellent cooling performance in this paper. Therefore, a simplified function can be established to evaluate the heat transfer coefficient with the optimized size parameters. The model of a 48 W/mm 2 power density GaN HEMTs device integrated on the Si interposer with optimized microjet cooling structure was simulated. The result indicated that the thermal resistance of the integrated system is 0.96 K/W which is equal to the thermal resistance of the device bonded on a 3 mm thick copper plate directly. The study on the property of the microfluid cooling in Si interposer provided a useful support for RF microsystem heterogeneous integration for GaN high power device on silicon.

关键词： Cooling Gallium nitride HEMTs MODFETs Heat transfer Microchannels Silicon

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A 14-22GHz monolithic Double-Balanced Passive Mixer

A 14-22GHz Monolithic Double-Balanced Passive Mixer

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International Conference on Microwave and Millimeter Wave technology Proceedings

作者： Hu Zhang Lei Yang Sai sai Jing Yufeng Guo Hao Gao Yi Zhang College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China Nanjing GuoBo Electronics Co. Ltd Nanjing China Silicon Austria Labs Linz Austria Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China State Key Laboratory of Millimeter Waves Nanjing China

ISBN: (纸本)9781665482271

In this paper, a passive double-balanced mixer operating at 14-22GHz is designed based on the $0.15_{5}\mathrm{m}$ pHEMT GaAs process provided by WIN Semiconductor. The RF/LO frequency of the mixer is 14GHz-22GHz, and the IF frequency range is DC-4GHz. The ring-shaped mixing ring is composed of four MOS transistors connected with drain and source, and the RF and LO ports are spiral Marchand balun. The simulation results show that when the LO power is 13dBm, the frequency conversion loss is about 10dB, the isolation of LO/RF port and LO/IF port are both greater than 30dB, and that of RF/IF port is greater than 20dB. Chip size is $1.5 \text{mm}\times 0.9\text{mm}$ .

关键词： Resistors Radio frequency MOSFET Spirals Baluns Simulation PHEMTs

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A 17–26.5 GHz 42.5 dBm broadband and highly efficient gallium nitride power amplifier design

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Frontiers of Information technology & Electronic Engineering 2022年第2期23卷 346-350页

作者： Ming LI Zhiqun LI Quan ZHENG Lanfeng LIN Hongqi TAO Institute of RF-&OE-ICs Southeast UniversityNanjing 210096China Science and Technology on Monolithic Integrated and Modules Laboratory Nanjing Electronic Devices InstituteNanjing 210016China Engineering Research Center of RF-ICs and RF-Systems Ministry of EducationNanjing 210096China

A gallium nitride(GaN)power amplifier monolithic microwave integrated circuit(MMIC)with a wide band and high efficiency in the microwave frequency band is proposed in this *** power amplifier MMIC uses a 0.15^im GaN high electron mo-bility transistor(HEMT)*** operating frequency band of the amplifier can cover the whole K-band,i.e.,17-26.5 GHz.

关键词： amplifier power MMIC

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A Fully integrated Front-End MMIC Based on GaN Doherty Power Amplifier for Mm-Wave 5G

A Fully Integrated Front-End MMIC Based on GaN Doherty Power...

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International Conference on Microwave and Millimeter Wave technology Proceedings

作者： Runnan Guo Chenrui Peng Hao Liu Yingfan Feng Zheng Yin Hongqi Tao Nanjing Electronic Devices Institute Nanjing China China Electronics Technology Group Corporation Academy of Electronics and Information Technology Beijing China Science and Technology on Monolithic Integrated and Modules Laboratory Nanjing China

ISBN: (纸本)9781665482271

A 26 GHz GaN Doherty amplifier MMIC with high 8dB back-off efficiency and simplified load modulation network, and a fully integrated RF front-end MMIC based on this Doherty PA are reported in this paper for mm-wave 5G application. The individual Doherty PA achieves up to 34% and 27% PAE at saturated and 8dB back-off respectively. And in the RF front-end MMIC, there are still PAE of 26%@Sat. and 24.7%@8dB-back-off PAE. The whole RF front-end MMIC could provide more than 35dBm peak output power for transmit, and 18dB linear gain, 3.6dB noise figure for receive in $24\sim 28\text{GHz}$ . The chip sizes of Doherty PA and front-end MMIC are $3.0\text{mm}\times 1.6\text{mm}$ and $3.0\text{mm} \times 2.4\text{mm}$ .

关键词： Radio frequency Noise figure Microwave integrated circuits 5G mobile communication Millimeter wave technology Power amplifiers Modulation

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10 Gb/s GaAs PHEMT high gain preamplifier for optical receivers

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

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Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors 2007年第12期28卷 1902-1911页

作者： Jiao, Shilong Yang, Xianming Zhao, Liang Li, Hui Chen, Zhenlong Chen, Tangsheng Shao, Kai Ye, Yutang School of Optoelectronic Information University of Electronic Science and Technology of China Chengdu 610054 China National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing 210016 China Nanjing Electronic Devices Institute Nanjing 210016 China

A high gain cascade connected preamplifier for optical receivers is developed with 0.5 μm GaAs PHEMT technology from the Nanjing Electronic Devices Institute. To begin with, the transimpedance amplifier has a -3 dB bandwidth of 10 GHz, with a small signal gain of around 9 dB. The post-stage distributed amplifier (DA) has a -3 dB bandwidth of close to 20 GHz, with a small signal gain of around 12 dB. As a whole, the cascade preamplifier has a measured small signal gain of 21.3 dB and a transimpedance of 55.3 dBΩ in a 50 n system. With a higher signal-to-noise ratio than that of the TIA and a markedly improved waveform distortion compared with that of the DA, the measured output eye diagram for 10 Gb/s NRZ pseudorandom binary sequence is clear and symmetric.

关键词： Optical receivers

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10 Gb/s GaAs PHEMT current mode transimpedance preamplifier for optical receiver

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

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Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors 2007年第1期28卷 24-30页

作者： Jiao, Shilong Ye, Yutang Chen, Tangsheng Feng, Ou Jiang, Youquan Fan, Chao Li, Fuxiao School of Optoelectronic Information University of Electronic Science and Technology of China Chengdu 610054 China National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing 210016 China Nanjing Electronic Devices Institute Nanjing 210016 China

A single power supply common-gate (CG) current mode transimpedance preamplifier (TIA) is developed with a 0.5 μm GaAs PHEMT process. The amplifier has a measured -3 dB bandwidth of 7.5 GHz and a transimpedance gain of 45 dBΩ. Both the input and output voltage standing wave ratios (VSWR) are less than 2 within the bandwidth. The equivalent input noise current spectral density varies from 14.3 to 22 pA/√Hz, with an average value of 17.2 pA/√Hz. Having a timing jitter of 14 ps and eye amplitude of about 138 mV, the measured output eye diagram for 10 Gb/s NRZ pseudorandom binary sequence (PRBS) is clear and satisfactory.

关键词： Optical receivers

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A millimeter wave 11W GaN MMIC power amplifier

A millimeter wave 11W GaN MMIC power amplifier

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IEEE Asia-Pacific Conference on Antennas and Propagation (APCAP)

作者： Xuming Yu Wei Hong Weibo Wang Hongqi Tao Chunjiang Ren State Key Laboratory of Millimeter Wave Southeast University Nanjing P. R. China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing P. R. China

ISBN: (纸本)9781479943531

A 11 W high power amplifier for millimeter wave application is reported in this paper. The monolithic three-stage amplifier has been realized using a 0.15 μm T-gate field plated AlGaN/GaN high electron mobility transistors (HEMTs) in a microstrip transmission line technology on 3-inch SiC substrate. Saturated output power of 40.5 dBm and peak power-added-efficiency of 20% were measured at 29 GHz with the pulsed DC supply voltage of 24 V. Across the 28-31 GHz range, the amplifier delivers output power above 39.3 dBm with power added efficiency over 15%.

关键词： Gallium nitride Power amplifiers HEMTs MODFETs MMICs Millimeter wave technology Microwave amplifiers

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Microfluidic Silicon Interposer for Thermal Management of Gan Device Integration

SSRN

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SSRN 2022年

作者： Yu, Miao Zhang, Hao Huang, Min Zhang, Hongze Zhu, Jian School of Electronic Science and Engineering Nanjing University Nanjing21002 China Nanjing Electronic Devices Institute Nanjing210016 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing210016 China

The cooling capability of the silicon interposers (SIs) with microjet and microchannel cooling for GaN device has been validated by practical implementations and characterized by numerical analysis in this work. A 5.3 mm × 3.5 mm × 0.08 mm GaN power amplifier (PA) with heating power of ~ 100 W integrated on SI is applied to evaluate the cooling performance of both microfluidic cooling configurations. The maximum hotspot power density of the GaN chip achieves 336.0 ~ 340.5 W/mm 2 , and the average chip power density is 539.0 ~ 546.3 W/cm 2 in the experiments. The SI is integrated with the GaN chip and micro-assembled in a test cube. The surface temperature distributions of the GaN chip are measured with different flow rate at 70 ℃ ambient temperature, and the overall thermal resistance with microjet cooling has 7.11 ~ 7.72 % reduction and its heat transfer coefficient (HTC) increases 12.3 ~ 28.3 % comparing to that with microchannel cooling at the pumping power of 0.5 ~ 1.5 W. The material properties of GaN chip and SI are extracted from the measurement results and support the analysis of the thermal and hydraulic properties of both microfluidic SIs numerically. Their cooling performance and efficiency are evaluated and compared based on the performance evaluation criteria (PEC), field synergy number and entropy generation rate. According to the evaluation results, while the PEC of microjet and microchannel SIs increases with the pumping power, the microjet SI can contribute to the enhancement of the synergetic relation between the flow and temperature fields and reduction of total irreversibility in heat transfer process comparing to the microchannel SI in pursuit of low overall thermal resistance. The field synergy number can improve 90.40 % and the argument entropy generation rate can be 0.376 when the overall thermal resistance is 1.35 K/W. © 2022, The Authors. All rights reserved.

关键词： Gallium nitride

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Observation of polarization pinning effect in PZT/AlGaN/GaN heterostructure

Observation of polarization pinning effect in PZT/AlGaN/GaN ...

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IEEE Conference on Electron Devices and Solid-State circuits

作者： Yuechan Kong Jianjun Zhou Tangsheng Chen Wenbo Luo Lanzhong Hao Huizhong Zeng Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing P. R. China State key laboratory of electronic thin films and integrated devices University of Electronics Science and Technology of China Chengdu P. R. China

ISBN: (纸本)9781479923366

PZT/AlGaN/GaN metal-ferroelectric-semiconductor (MFS) heterostructure is fabricated and characterized by C-V measurement. A distinct asymmetric shift of C-V curve is observed that when the up-sweep (from negative to positive) starting voltage increases from -10 V to -18 V, the C-V curve shifts positively with the threshold voltage varying from -2.4 V to 1.1 V, whereas the down-sweep (from positive to negative) C-V curve hardly move with different starting voltage. The field-history dependent polarization effect of ferroelectrics is involved into a self-consistent calculation, by which the nature of the asymmetric C-V curve shift is disclosed to be the polarization pinning effect of the underlying AlGaN layer. The results take an insight into the interface polarization coupling in GaN-based MFS structure for memory device applications.

关键词： Gallium nitride TV Capacitance-voltage characteristics

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