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检索条件"机构=Science and Technology on Monolithic Integrated Circuit and Modules Laboratory"
201 条 记 录,以下是161-170 订阅
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A large signal SDD model for InP DHBT
A large signal SDD model for InP DHBT
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International Conference on Computational Problem-Solving (ICCP)
作者: Oupeng Li Wei Cheng Lei Wang Haiyan Lu Ruimin Xu Fundamental Science on EHF Laboratory University of Electronic Science and Technology of China Chengdu P. R. China Science and Technology Monolithic Integrated Circuits Modules Laboratory Nanjing P. R. China
In this paper, a accuracy large-signal model based on agilentHBT model for InP dou-ble heterojunction bipolar transistors (DHBTs) is implemented as symbolically defined device (SDD) in Agilent ADS. The model accounts ... 详细信息
来源: 评论
Numerical Study on Microjet Cooling Structure for GaN HEMTs Integration on Silicon
Numerical Study on Microjet Cooling Structure for GaN HEMTs ...
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International Conference on (ICEPT) Electronic Packaging technology
作者: Miao Yu Jian Zhu Min Huang Hongze Zhang School of Electronic Science and Engineering Nanjing Electronic Devices Institute Nanjing University Nanjing China School of Electronic Science and Engineering Nanjing Electronic Devices Institute Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing University Nanjing China Electronic Science and Engineering Nanjing Electronic Devices Institute Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing Electronic Devices Institute Nanjing China
An analysis on the heat transfer feature of the microfluid cooling based on the microjet structure in the Si interposer for GaN HEMTs was investigated to meet the requirement of thermal management in RF microsystem in... 详细信息
来源: 评论
A 14-22GHz monolithic Double-Balanced Passive Mixer
A 14-22GHz Monolithic Double-Balanced Passive Mixer
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International Conference on Microwave and Millimeter Wave technology Proceedings
作者: Hu Zhang Lei Yang Sai sai Jing Yufeng Guo Hao Gao Yi Zhang College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China Nanjing GuoBo Electronics Co. Ltd Nanjing China Silicon Austria Labs Linz Austria Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China State Key Laboratory of Millimeter Waves Nanjing China
In this paper, a passive double-balanced mixer operating at 14-22GHz is designed based on the $0.15_{5}\mathrm{m}$ pHEMT GaAs process provided by WIN Semiconductor. The RF/LO frequency of the mixer is 14GHz-22GHz, a... 详细信息
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A 17–26.5 GHz 42.5 dBm broadband and highly efficient gallium nitride power amplifier design
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Frontiers of Information technology & Electronic Engineering 2022年 第2期23卷 346-350页
作者: Ming LI Zhiqun LI Quan ZHENG Lanfeng LIN Hongqi TAO Institute of RF-&OE-ICs Southeast UniversityNanjing 210096China Science and Technology on Monolithic Integrated and Modules Laboratory Nanjing Electronic Devices InstituteNanjing 210016China Engineering Research Center of RF-ICs and RF-Systems Ministry of EducationNanjing 210096China
A gallium nitride(GaN)power amplifier monolithic microwave integrated circuit(MMIC)with a wide band and high efficiency in the microwave frequency band is proposed in this *** power amplifier MMIC uses a 0.15^im GaN h... 详细信息
来源: 评论
A Fully integrated Front-End MMIC Based on GaN Doherty Power Amplifier for Mm-Wave 5G
A Fully Integrated Front-End MMIC Based on GaN Doherty Power...
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International Conference on Microwave and Millimeter Wave technology Proceedings
作者: Runnan Guo Chenrui Peng Hao Liu Yingfan Feng Zheng Yin Hongqi Tao Nanjing Electronic Devices Institute Nanjing China China Electronics Technology Group Corporation Academy of Electronics and Information Technology Beijing China Science and Technology on Monolithic Integrated and Modules Laboratory Nanjing China
A 26 GHz GaN Doherty amplifier MMIC with high 8dB back-off efficiency and simplified load modulation network, and a fully integrated RF front-end MMIC based on this Doherty PA are reported in this paper for mm-wave 5G... 详细信息
来源: 评论
10 Gb/s GaAs PHEMT high gain preamplifier for optical receivers
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
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Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors 2007年 第12期28卷 1902-1911页
作者: Jiao, Shilong Yang, Xianming Zhao, Liang Li, Hui Chen, Zhenlong Chen, Tangsheng Shao, Kai Ye, Yutang School of Optoelectronic Information University of Electronic Science and Technology of China Chengdu 610054 China National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing 210016 China Nanjing Electronic Devices Institute Nanjing 210016 China
A high gain cascade connected preamplifier for optical receivers is developed with 0.5 μm GaAs PHEMT technology from the Nanjing Electronic Devices Institute. To begin with, the transimpedance amplifier has a -3 dB b... 详细信息
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10 Gb/s GaAs PHEMT current mode transimpedance preamplifier for optical receiver
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
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Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors 2007年 第1期28卷 24-30页
作者: Jiao, Shilong Ye, Yutang Chen, Tangsheng Feng, Ou Jiang, Youquan Fan, Chao Li, Fuxiao School of Optoelectronic Information University of Electronic Science and Technology of China Chengdu 610054 China National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing 210016 China Nanjing Electronic Devices Institute Nanjing 210016 China
A single power supply common-gate (CG) current mode transimpedance preamplifier (TIA) is developed with a 0.5 μm GaAs PHEMT process. The amplifier has a measured -3 dB bandwidth of 7.5 GHz and a transimpedance gain o... 详细信息
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A millimeter wave 11W GaN MMIC power amplifier
A millimeter wave 11W GaN MMIC power amplifier
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IEEE Asia-Pacific Conference on Antennas and Propagation (APCAP)
作者: Xuming Yu Wei Hong Weibo Wang Hongqi Tao Chunjiang Ren State Key Laboratory of Millimeter Wave Southeast University Nanjing P. R. China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing P. R. China
A 11 W high power amplifier for millimeter wave application is reported in this paper. The monolithic three-stage amplifier has been realized using a 0.15 μm T-gate field plated AlGaN/GaN high electron mobility trans... 详细信息
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Microfluidic Silicon Interposer for Thermal Management of Gan Device Integration
SSRN
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SSRN 2022年
作者: Yu, Miao Zhang, Hao Huang, Min Zhang, Hongze Zhu, Jian School of Electronic Science and Engineering Nanjing University Nanjing21002 China Nanjing Electronic Devices Institute Nanjing210016 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing210016 China
The cooling capability of the silicon interposers (SIs) with microjet and microchannel cooling for GaN device has been validated by practical implementations and characterized by numerical analysis in this work. A 5.3... 详细信息
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Observation of polarization pinning effect in PZT/AlGaN/GaN heterostructure
Observation of polarization pinning effect in PZT/AlGaN/GaN ...
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IEEE Conference on Electron Devices and Solid-State circuits
作者: Yuechan Kong Jianjun Zhou Tangsheng Chen Wenbo Luo Lanzhong Hao Huizhong Zeng Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing P. R. China State key laboratory of electronic thin films and integrated devices University of Electronics Science and Technology of China Chengdu P. R. China
PZT/AlGaN/GaN metal-ferroelectric-semiconductor (MFS) heterostructure is fabricated and characterized by C-V measurement. A distinct asymmetric shift of C-V curve is observed that when the up-sweep (from negative to p... 详细信息
来源: 评论