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检索条件"机构=Science and Technology on Monolithic Integrated Circuit and Modules Laboratory"
201 条 记 录,以下是181-190 订阅
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High power and high efficiency GaN HEMT with WN Schottky barrier
High power and high efficiency GaN HEMT with WN Schottky bar...
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IEEE International Workshop on Radio-Frequency Integration technology (RFIT)
作者: Tangsheng Chen Jianjun Zhou Chunjiang Ren Zhonghui Li Shichang Zhong Bin Zhang Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing P. R. China
In this paper, a high power and high efficiency L/S-band GaN HEMT with tungsten nitride (WN) Schottky barrier is presented. By employing WN Schottky barrier, the reaction between the gate electrode and AlGaN layer is ... 详细信息
来源: 评论
A Simple Method to Accurately Determine the Temperature Dependence of Thermal Resistance of InP HBTs
A Simple Method to Accurately Determine the Temperature Depe...
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2012 IEEE 11th International Conference on Solid-State and integrated circuit technology(ICSICT-2012)
作者: Jun Liu Wei Cheng Lin Zhang Haiyan Lu Chunlin Han Key Laboratory for RF Circuits and Systems of Ministry of Education Hangzhou Dianzi University Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute
A simple method to accurately determine the nonlinear dependence of the thermal resistance of heterojunction bipolar transistors(HBTs)on ambient and junction temperatures is presented.A nonlinear model of the therma... 详细信息
来源: 评论
Transmission Characteristics of a Generalized Parallel Plate Dielectric Waveguide at THz Frequencies
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Chinese Physics Letters 2011年 第12期28卷 128-131页
作者: YE Long-Fang XU Rui-Min ZHANG Yong LIN Wei-Gan Extra High Frequency Key Laboratory of Fundamental Science School of Electronic EngineeringUniversity of Electronic Science and Technology of ChinaChengdu 611731 National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing 210016
A generalized parallel-plate dielectric waveguide(G-PPDW)is proposed as a new guiding medium for terahertz wave.A theoretical analysis of the transmission characteristics for the TE modes of this generalized structure... 详细信息
来源: 评论
Corrigendum to “Accurate calculation of terahertz attenuation of a dielectric-coated metal wire with an intervening air gap using the engineering approach” [Optics Communications 284/16–17 (2011) 3990–3995]
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Optics Communications 2012年 第5期285卷 857-857页
作者: Zhihui Wang Yong Zhang Ruimin Xu Weigan Lin School of Electronic Engineering University of Electronic Science and Technology of China Chengdu 611731 China National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing 210016 China
来源: 评论
A monolithic AlGaN/GaN HEMT VCO using BST film varactor
A monolithic AlGaN/GaN HEMT VCO using BST film varactor
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4th IEEE International Symposium on Radio-Frequency Integration technology, RFIT2011
作者: Kong, Cen Li, Hui Jiang, Shuwen Zhou, Jianjun Chen, Xiaojian Chen, Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Device Institute Nanjing 210016 China State Key Laboratory of Electronic Thin-Film and Integrated Devices University of Electronic Science and Technology of China Chengdu 610054 China
A monolithic AlGaN/GaN HEMT voltage controlled oscillator (VCO) using barium strontium titanate (BST) MIM varactor is reported first time. The BST thin film was fabricated by RF magnetron sputtering. The fabrication p... 详细信息
来源: 评论
低真空条件下石墨烯薄膜的制备工艺研究
低真空条件下石墨烯薄膜的制备工艺研究
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第十七届全国化合物半导体材料微波器件和光电器件学术会议
作者: Yun Li 李赟 Zhijun Yin 尹志军 Zhiming Zhu 朱志明 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanfing Electronic 微波毫米波单片集成和模块电路重点实验室 南京电子器件研究所南京 210016
本文利用水平热壁式CVD外延炉开展了SiC热分解法制备石墨烯薄膜的实验,主要研究了不同的真空热处理时间对石墨烯薄膜生长的影响。SiC衬底的氢气在线刻蚀处理和热分解在同一炉次进行,高温时反应室释放出之前吸附的氢气不能有效地被分子... 详细信息
来源: 评论
高质量GaN薄膜的MOCVD同质外延生长
高质量GaN薄膜的MOCVD同质外延生长
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第十七届全国化合物半导体材料微波器件和光电器件学术会议
作者: Liang Li 李亮 Zhonghui Li 李忠辉 Weike Luo 罗伟科 Xu Dong 董逊 Daqing Peng 彭大青 Dongguo Zhang 张东国 微波毫米波单片集成和模块电路重点实验室 南京电子器件研究所南京210016 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronics Device InstituteNaning210016 China
采用金属有机化学气相沉积(MOCVD)方法,在GaN自支撑衬底上同质外延生长了GaN薄膜,得到高质量的GaN外延薄膜。X射线衍射(XRD)结果显示其(002)面摇摆曲线半高宽小于100弧秒,原子力显微镜(AFM)照片上能看到连续的二维台阶流形貌,其表面租... 详细信息
来源: 评论
低温GaN插入层对AlGaN/GaN二维电子气特性的改善
低温GaN插入层对AlGaN/GaN二维电子气特性的改善
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第十七届全国化合物半导体材料微波器件和光电器件学术会议
作者: Dongguo Zhaang 张东国 Zhonghui Li 李忠辉 Daqing Peng 彭大青 Xun Dong 董逊 Liang Li 李亮 Jinyu Ni 倪金玉 Science and Technology of Monolithic Integrated and Modules Circuits Key Laboratory Nanjing Electronic Devices Institute Nanfing 210016 China 微波毫米波单片集成和模块电路重点实验室 南京电子器件研究所南京 210016
利用低压MOCVD技术在蓝宝石衬底上生长了AlGaN/GaN二维电子气(2DEG)材料,在GaN生长中插入一层低温GaN,并研究了低温GaN插入层对二维电子气输运特性的影响。使用原子力显微镜(AFM)和非接触霍尔测试仪测量了材料的表面形貌和电学特性,发... 详细信息
来源: 评论
A monolithic AlGaN/GaN HEMT VCO using BST film varactor
A monolithic AlGaN/GaN HEMT VCO using BST film varactor
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IEEE International Workshop on Radio-Frequency Integration technology (RFIT)
作者: Cen Kong Hui Li Shuwen Jiang Jianjun Zhou Xiaojian Chen Chen Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Device Institute Nanjing China State Key Laboratory of Electronic Thin-Film and Integrated Devices University of Electronic Science and Technology Chengdu China
A monolithic AlGaN/GaN HEMT voltage controlled oscillator (VCO) using barium strontium titanate (BST) MIM varactor is reported first time. The BST thin film was fabricated by RF magnetron sputtering. The fabrication p... 详细信息
来源: 评论
Effects of AlN and AlGaN Interlayer on Properties of InAlN/GaN Heterostructures
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Chinese Physics Letters 2010年 第3期27卷 251-253页
作者: 董逊 李忠辉 李哲洋 周建军 李亮 李赟 张岚 许晓军 徐轩 韩春林 National Key Laboratory of Science and Technology on Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute Nanjing 210016
InAlN/GaN heterojunction structures are grown on two-inch c-face(0001) sapphire substrates by metalorganic chemical vapour deposition. AlN and AlGaN interlayers are intentionally inserted into the structure to impro... 详细信息
来源: 评论