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检索条件"机构=Science and Technology on Monolithic Integrated Circuit and Modules Laboratory"
201 条 记 录,以下是181-190 订阅
排序:
Modeling Techniques for Graphene field-effect transistors
Modeling Techniques for Graphene field-effect transistors
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2015 International Conference on Communication Problem-Solving(ICCP)
作者: Haiyan Lu Yun Wu Shuai Huo Yuehang Xu Yuechan Kong Tangshen Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute University of Electronic Science and Technology of China
This paper presents a hybrid-π equivalent circuit extract method for graphene field-effect transistors up to 66 GHz. Because the G-FET channel cannot be pinched off, the open and short structures are used to remove p... 详细信息
来源: 评论
Heterogenous Integration of InP DHBT and Si CMOS by $30\mu\mathrm{m}$ Pitch Au-In Microbumps
Heterogenous Integration of InP DHBT and Si CMOS by $30\mu\m...
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IEEE Electron Devices technology and Manufacturing Conference (EDTM)
作者: LiShu Wu JiaYun Dai Cheng Wei YueChan Kong TangShen Chen Tong Zhang Joint International Research Laboratory of Information Display and Visualization School of Electronic Science and Engineering Southeast University Nanjing P. R. China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing P. R. China
In this work, we demonstrate heterogeneous integration of InP DHBT and Si CMOS on the same Silicon substrate based on 30μm Au-In microbump bonding technology, InP DHBTs are vertical stacked at the top of the Si CMOS ... 详细信息
来源: 评论
A Broad-Band 1:4 Static Frequency Divider MMIC in InPHBT
A Broad-Band 1:4 Static Frequency Divider MMIC in InPHBT
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International Conference on integrated circuits and Microsystems (ICICM)
作者: Min Zhang Qiao Meng Youtao Zhang Xiaopeng Li Yi Zhang Wei Cheng Institute of RF-&-OE ICs Southeast University Nanjing China Nanjing GuoBo Electronics Co. Ltd Nanjing China National and Local Joint Engineering Laboratory of RF integration & Micro-Assembly Technology Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China
This paper design and realize a broad-band 1:4 static frequency divider MMIC in 0.7$\mu$m InGaAs/InP DHBT technology. It is realized in a complete circuit structure and can be directly used in high precision instrumen...
来源: 评论
Simplified Evaluation on Cooling Performance of Silicon Microfluidic Interposer
Simplified Evaluation on Cooling Performance of Silicon Micr...
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International Conference on (ICEPT) Electronic Packaging technology
作者: Miao Yu Min Huang Jian Zhu Nanjing University School of Electronic Science and Engineering Nanjing Electronic Devices Institute Nanjing China Nanjing Electronic Devices Institute Nanjing China Nanjing University School of Electronic Science and Engineering Nanjing Electronic Devices Institute Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China
simplified evaluation methods for the analysis on the thermal and hydraulic properties of the silicon microfluidic interposer for GaN power device cooling are proposed in this work. The microjet-microchannel hybrid st...
来源: 评论
High-Performance Monolayer WS2 Field-effect Transistors on High-κ Dielectrics
High-Performance Monolayer WS2 Field-effect Transistors on H...
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The 6th International Conference on Nanoscience and technology, China 2015 (第六届中国国际纳米科学技术会议)
作者: Yang Cui Run Xin Zhihao Yu Yiming Pan Zhun-Yong Ong Xiaoxu Wei Junzhuan Wang Yun Wu Tangsheng Chen Yi Shi Baigeng Wang Yong-Wei Zhang Gang Zhang Xinran Wang National Laboratory of Solid State Microstructures School of Electronic Science and Engineeringand School of Physics Nanjing UniversityNanjing 210093P.R.China Institute of High Performance Computing 1 Fusionopolis Way138632Singapore Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic D
WS2 is an attractive two-dimensional semiconductor material for electronic and optoelectronic device applications due to its high phonon limited mobility compared to other transition metal *** measured field-effect mo... 详细信息
来源: 评论
A High-Speed Level Shifter with dVs/dt Noise Immunity Enhancement Structure for 200V monolithic GaN Power IC
A High-Speed Level Shifter with dVs/dt Noise Immunity Enhanc...
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International Symposium on Power Semiconductor Devices and Ics (ISPSD)
作者: Yifei Zheng Qing Yuan Deyuan Song Yutao Ying Jing Zhu Weifeng Sun Long Zhang Sheng Li Denggui Wang Jianjun Zhou Sen Zhang Nailong He National ASIC System Engineering Research Center Southeast University Nanjing China Wuxi Chipown Micro-electronics limited Wuxi China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China Technology development department CSMC Technologies Corporation Wuxi China
monolithic integration has been demonstrated to be an ideal solution to minimize the parasitics in GaN power IC. Nonetheless, the current commercially GaN process for power IC is far less mature and only n-type HEMTs ...
来源: 评论
A Near-Field Focusing Circularly Polarized Radial Line Slot Array Antenna
A Near-Field Focusing Circularly Polarized Radial Line Slot ...
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European Conference on Antennas and Propagation, EuCAP
作者: Liyuan Zhong Shufeng Zheng Hangqi Yang Yanxiang Yi Qi Luo Chao Gu School of Electronic Engineering Xidian University Xi'an China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China School of Physics Engineering and Computer Science University of Hertfordshire Hatfield UK ECIT Institute Queen's University Belfast Belfast UK
This paper presents the implementation of a near-field focusing (NFF) antenna on basis of radial line slot array (RLSA). The proposed NFF-RLSA antenna is derived from the conventional single-layer spiral-patterned RLS...
来源: 评论
A 20GSps Broadband Sigma-Delta ADC in InP DHBT technology
A 20GSps Broadband Sigma-Delta ADC in InP DHBT Technology
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International Conference on Microwave and Millimeter Wave technology Proceedings
作者: Yang Wang Kun Liu Chunlin Han Youtao Zhang Xiaopeng Li Lei Yang Yufeng Guo Yi Zhang Nanjing Vocational University of Industry Technology Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts and Telecommunications Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing GuoBo Electronics Co. Ltd Nanjing China State Key Laboratory of Millimeter Waves Nanjing China
This paper presents a continuous time ultra-high speed broadband $\Sigma-\Delta$ analog-to-digital converter (ADC) with a clock sampling rate of 20 GS/s based on 0.7 $\boldsymbol{\mu}\mathbf{m}\ \mathbf{InP}$ DHBT... 详细信息
来源: 评论
Design of A 0.5~50GHz Differential Distributed Amplifier Based on 0.7μm InP HBT technology
Design of A 0.5~50GHz Differential Distributed Amplifier Bas...
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International Conference on Microwave and Millimeter Wave technology Proceedings
作者: Yuhang Zhuang Xin Yan Guanglai Wu Hao Gao Youtao Zhang Yujie Tang Yi Zhang College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China Eindhoven University of Technology Holland GuoBo Electronics Co. Ltd Nanjing China National and local joint engineering Laboratory for RF Integration and Micro assembly Technology Nanjing China Key Laboratory of Microwave millimeter Wave monolithic Integrated and Modular Circuits Nanjing China State Key Laboratory of Millimeter Wave Southeast University Nanjing
This paper presents a 0.5∽50GHz differential distributed amplifier implemented in a 0.7μm InP HBT technology. The amplifier uses a common-source common-gate structure with a source follower as the gain unit, and the... 详细信息
来源: 评论
12 Gb/s GaAs PHEMT transimpedance preamplifier for optical receiver
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Tien Tzu Hsueh Pao/Acta Electronica Sinica 2006年 第6期34卷 1156-1158页
作者: Jiao, Shi-Long Feng, Wei Chen, Tang-Sheng Fan, Chao Li, Fu-Xiao Ye, Yu-Tang School of Optoelectronic Information University of Electronic Science and Technology of China Chengdu 610054 China National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute Nanjing 210016 China
A kind of single power supply transimpedance preamplifier (TIA) for optical receiver is developed, using 0.5 μm GaAs PHEMT process. The TIA has a measured -3 dB bandwidth of 9.5 GHz, with transimpedance gain of 43.5&... 详细信息
来源: 评论