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2015 International Conference on Communication Problem-Solving(ICCP)

作者： Haiyan Lu Yun Wu Shuai Huo Yuehang Xu Yuechan Kong Tangshen Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute University of Electronic Science and Technology of China

ISBN: (纸本)9781467365451

This paper presents a hybrid-π equivalent circuit extract method for graphene field-effect transistors up to 66 GHz. Because the G-FET channel cannot be pinched off, the open and short structures are used to remove parasitic element of the pad. The intrinsic elements of the model parameters are extracted from measured S-parameters directly. The model is verified with experiments and simulations, and good agreements are observed. The model will provide some insights and guidance for the practical use of the GFETs and can be embedded in circuit simulation tools.

关键词： FET Modeling Techniques for Graphene field-effect transistors Graphene

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Heterogenous Integration of InP DHBT and Si CMOS by $30\mu\mathrm{m}$ Pitch Au-In Microbumps

Heterogenous Integration of InP DHBT and Si CMOS by $30\mu\m...

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IEEE Electron Devices technology and Manufacturing Conference (EDTM)

作者： LiShu Wu JiaYun Dai Cheng Wei YueChan Kong TangShen Chen Tong Zhang Joint International Research Laboratory of Information Display and Visualization School of Electronic Science and Engineering Southeast University Nanjing P. R. China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing P. R. China

In this work, we demonstrate heterogeneous integration of InP DHBT and Si CMOS on the same Silicon substrate based on 30μm Au-In microbump bonding technology, InP DHBTs are vertical stacked at the top of the Si CMOS wafer. Meanwhile, we exhibit a InP-on-Si CMOS 14Gbps 1:16 demultiplexer as example, which shows the potential to integrate InP and Si CMOS on the same chip to take advance of the two different material systems.

关键词： DH-HEMTs CMOS technology Silicon Manufacturing III-V semiconductor materials Bonding Indium phosphide

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A Broad-Band 1:4 Static Frequency Divider MMIC in InPHBT

A Broad-Band 1:4 Static Frequency Divider MMIC in InPHBT

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International Conference on integrated circuits and Microsystems (ICICM)

作者： Min Zhang Qiao Meng Youtao Zhang Xiaopeng Li Yi Zhang Wei Cheng Institute of RF-&-OE ICs Southeast University Nanjing China Nanjing GuoBo Electronics Co. Ltd Nanjing China National and Local Joint Engineering Laboratory of RF integration & Micro-Assembly Technology Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China

This paper design and realize a broad-band 1:4 static frequency divider MMIC in 0.7$\mu$m InGaAs/InP DHBT technology. It is realized in a complete circuit structure and can be directly used in high precision instruments and relative systems to replace divide modules. Test results show that it can operate from 1GHz to 48GHz with sine-wave input. The input power dynamic range is from -10 to 10 dBm during the whole bandwidth. The output power is all above 0dBm and the SSB phase noise is -141.15dBc/Hz at 24GHz input.

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Simplified Evaluation on Cooling Performance of Silicon Microfluidic Interposer

Simplified Evaluation on Cooling Performance of Silicon Micr...

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International Conference on (ICEPT) Electronic Packaging technology

作者： Miao Yu Min Huang Jian Zhu Nanjing University School of Electronic Science and Engineering Nanjing Electronic Devices Institute Nanjing China Nanjing Electronic Devices Institute Nanjing China Nanjing University School of Electronic Science and Engineering Nanjing Electronic Devices Institute Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China

simplified evaluation methods for the analysis on the thermal and hydraulic properties of the silicon microfluidic interposer for GaN power device cooling are proposed in this work. The microjet-microchannel hybrid structure and the parallel microchannel structure are analyzed and compared based on the theoretical and empirical equations. It is depicted that water realizes the best cooling performance among the common coolants driven by the identical pressure in the parallel microchannel structure. The convective heat transfer thermal resistance and heat transfer coefficient of the microjet-microchannel hybrid structure exhibit 22.4 % decrease and 2.24 times enhancement in comparison to the parallel microchannel structure on the conditions of the identical pressure and volume flow rate, respectively.

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High-Performance Monolayer WS2 Field-effect Transistors on High-κ Dielectrics

High-Performance Monolayer WS2 Field-effect Transistors on H...

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The 6th International Conference on Nanoscience and technology, China 2015 (第六届中国国际纳米科学技术会议)

作者： Yang Cui Run Xin Zhihao Yu Yiming Pan Zhun-Yong Ong Xiaoxu Wei Junzhuan Wang Yun Wu Tangsheng Chen Yi Shi Baigeng Wang Yong-Wei Zhang Gang Zhang Xinran Wang National Laboratory of Solid State Microstructures School of Electronic Science and Engineeringand School of Physics Nanjing UniversityNanjing 210093P.R.China Institute of High Performance Computing 1 Fusionopolis Way138632Singapore Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic D

WS2 is an attractive two-dimensional semiconductor material for electronic and optoelectronic device applications due to its high phonon limited mobility compared to other transition metal *** measured field-effect mobility thus far,however,is much smaller than theoretical predictions,dominated by extrinsic factors including charge traps and impurities.

关键词： tungsten disulfide (WS2) transition metal dichalcogenides (TMDs) mobility interface

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A High-Speed Level Shifter with dVs/dt Noise Immunity Enhancement Structure for 200V monolithic GaN Power IC

A High-Speed Level Shifter with dVs/dt Noise Immunity Enhanc...

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International Symposium on Power Semiconductor Devices and Ics (ISPSD)

作者： Yifei Zheng Qing Yuan Deyuan Song Yutao Ying Jing Zhu Weifeng Sun Long Zhang Sheng Li Denggui Wang Jianjun Zhou Sen Zhang Nailong He National ASIC System Engineering Research Center Southeast University Nanjing China Wuxi Chipown Micro-electronics limited Wuxi China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China Technology development department CSMC Technologies Corporation Wuxi China

monolithic integration has been demonstrated to be an ideal solution to minimize the parasitics in GaN power IC. Nonetheless, the current commercially GaN process for power IC is far less mature and only n-type HEMTs are available. Therefore, it is difficult for high voltage level shifters to achieve high speed. This work implements a level shifter for GaN IC to achieve both small response time and high $\mathrm{d}V_{\mathrm{S}}/\text{dt}$ noise immunity without complicated signal processing circuits, thus delay and conduction loss will be minimized. The proposed circuit was fabricated in a $1\mu\mathrm{m}$ GaN-on-Silicon process and measured results were performed to verify the characteristics.

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A Near-Field Focusing Circularly Polarized Radial Line Slot Array Antenna

A Near-Field Focusing Circularly Polarized Radial Line Slot ...

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European Conference on Antennas and Propagation, EuCAP

作者： Liyuan Zhong Shufeng Zheng Hangqi Yang Yanxiang Yi Qi Luo Chao Gu School of Electronic Engineering Xidian University Xi'an China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China School of Physics Engineering and Computer Science University of Hertfordshire Hatfield UK ECIT Institute Queen's University Belfast Belfast UK

This paper presents the implementation of a near-field focusing (NFF) antenna on basis of radial line slot array (RLSA). The proposed NFF-RLSA antenna is derived from the conventional single-layer spiral-patterned RLSA with circular polarizations, and near-field focused radiation characteristics is realized by adjusting the arrangements of radiating slot pairs and hence the amplitude and phase distribution of RLSA aperture. The designed NFF-RLSA antenna is 14.4λ0 in diameter and 0.17λ0 in height, where λ0 donates the wavelength in free space at the operating frequency, namely 10GHz. Simulation results show that the focus spot is 22.5λ0 away from the antenna aperture, while a focusing gain of 31.2dBi is achieved, and the size of focus spot is 2.48λ0 in width and 11.3λ0 in depth of focus, respectively.

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A 20GSps Broadband Sigma-Delta ADC in InP DHBT technology

A 20GSps Broadband Sigma-Delta ADC in InP DHBT Technology

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International Conference on Microwave and Millimeter Wave technology Proceedings

作者： Yang Wang Kun Liu Chunlin Han Youtao Zhang Xiaopeng Li Lei Yang Yufeng Guo Yi Zhang Nanjing Vocational University of Industry Technology Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing University of Posts and Telecommunications Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing GuoBo Electronics Co. Ltd Nanjing China State Key Laboratory of Millimeter Waves Nanjing China

ISBN: (纸本)9781665482271

This paper presents a continuous time ultra-high speed broadband $\Sigma-\Delta$ analog-to-digital converter (ADC) with a clock sampling rate of 20 GS/s based on 0.7 $\boldsymbol{\mu}\mathbf{m}\ \mathbf{InP}$ DHBT process. The ADC includes a low-pass second-order $\Sigma-\Delta$ Modulator, which adopts 2bit quantization. The circuit includes a high linearity 2-bit current steering digital to analog converter (DAC). A system level simulation is presented considering values of resistors and capacitors in the integrator, as well as other data regarding the opamp and the quantizer. Simulation results show that for input signal of 1000mV, when the sampling rate is 20GSps, the $\Sigma-\Delta$ ADC designed has a spurious free dynamic range (SFDR) of 45.1dB and a signal-to-noise ratio (SNR) of 35.2dB for input frequency of 620.12 MHz.

关键词： Sigma-delta modulation Quantization (signal) Simulation DH-HEMTs Millimeter wave radar Broadband communication Heterojunction bipolar transistors

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Design of A 0.5~50GHz Differential Distributed Amplifier Based on 0.7μm InP HBT technology

Design of A 0.5~50GHz Differential Distributed Amplifier Bas...

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International Conference on Microwave and Millimeter Wave technology Proceedings

作者： Yuhang Zhuang Xin Yan Guanglai Wu Hao Gao Youtao Zhang Yujie Tang Yi Zhang College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China Eindhoven University of Technology Holland GuoBo Electronics Co. Ltd Nanjing China National and local joint engineering Laboratory for RF Integration and Micro assembly Technology Nanjing China Key Laboratory of Microwave millimeter Wave monolithic Integrated and Modular Circuits Nanjing China State Key Laboratory of Millimeter Wave Southeast University Nanjing

ISBN: (数字)9798350389968

ISBN: (纸本)9798350389975

This paper presents a 0.5∽50GHz differential distributed amplifier implemented in a 0.7μm InP HBT technology. The amplifier uses a common-source common-gate structure with a source follower as the gain unit, and the transmission line selects the grounded coplanar waveguide. At the same time, a transmission is introduced to peak the high-frequency gain and expand the bandwidth. The simulation results show that the differential-mode gain of the amplifier is typically 12 dB in the frequency range of 0.5 to 50 GHz, with a flatness of ±1.5 dB. The input and output return losses are both less than -10 dB, and the output 1dB compression point > 10dBm.

关键词： Distributed amplifiers Microwave technology Simulation Millimeter wave technology Bandwidth Heterojunction bipolar transistors Topology

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12 Gb/s GaAs PHEMT transimpedance preamplifier for optical receiver

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Tien Tzu Hsueh Pao/Acta Electronica Sinica 2006年第6期34卷 1156-1158页

作者： Jiao, Shi-Long Feng, Wei Chen, Tang-Sheng Fan, Chao Li, Fu-Xiao Ye, Yu-Tang School of Optoelectronic Information University of Electronic Science and Technology of China Chengdu 610054 China National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute Nanjing 210016 China

A kind of single power supply transimpedance preamplifier (TIA) for optical receiver is developed, using 0.5 μm GaAs PHEMT process. The TIA has a measured -3 dB bandwidth of 9.5 GHz, with transimpedance gain of 43.5±1.5 dBΩ in the range of 50 MHz-7.5 GHz. The return losses of input and output ports are both less than -10 dB. The noise figure (NF) varies from 4 dB to 6.5 dB within the bandwidth, while the calculated minimal equivalent input noise current density is about 17.6 pA/√Hz. The measured output eye diagram for 12 Gb/s NRI pseudorandom binary sequence is clear and satisfying.

关键词： Optical communication

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