检索结果-内蒙古大学图书馆

arXiv 2022年

作者： Zou, Bo Zhou, Yu Zhou, Yan Wu, Yanyan He, Yang Wang, Xiaonan Yang, Jinfeng Zhang, Lianghui Chen, Yuxiang Zhou, Shi Guo, Huaixin Sun, Huarui School of Science Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information System Harbin Institute of Technology Shenzhen518055 China Collaborative Innovation Center of Extreme Optics Shanxi University Shanxi Taiyuan030006 China State Key Laboratory of Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences Beijing100083 China University of Science and Technology of China Hefei230026 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China

The emerging Au-assisted exfoliation technique provides a wealth of large-area and high-quality ultrathin two-dimensional (2D) materials compared with traditional tape-based exfoliation. Fast, damage-free, and reliable determination of the layer number of such 2D films is essential to study layer-dependent physics and promote device applications. Here, an optical method has been developed for simple, high throughput, and accurate determination of the layer number for Au-assisted exfoliated MoS2 and WS2 films in a broad thickness range. The method is based on quantitative analysis of layer-dependent white light reflection spectra, revealing that the reflection peak intensity can be used as a clear indicator for determining the layer number. The simple yet robust method will facilitate the fundamental study on layer-dependent optical, electrical, and thermal properties and device applications of 2D materials. The technique can also be readily combined with photoluminescence and Raman spectroscopies to study other layer-dependent physical properties of 2D materials. Copyright © 2022, The Authors. All rights reserved.

关键词： Layered semiconductors

来源：评论

学校读者我要写书评

暂无评论

Research of temporary bonding for 3D integrational Microsystem

引用

Journal of Physics: Conference Series 2018年第1期986卷

作者： G X Shi J Wu K Q Qian J Zhu Nanjing Electronic Devices Institute Nanjing 210016 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing 210016 China

Due to the thickness of current interposer must be very small, the thickness of active and passive wafers are no more than 200um, even less than 100um, sometime even less than 50um, So handing the thin wafer is the key problem for 3D stack, in this paper designed and experimented the temporary bonding for 3D stack and substrate thinning, analyzed the result of the experiment, and the foundation for the 3D integration technology in the future.

关键词：

来源：评论

学校读者我要写书评

暂无评论

Cu Pillar Low Temperature Bonding and Interconnection technology of for 3D RF Microsystem

引用

Journal of Physics: Conference Series 2018年第1期986卷

作者： G X Shi K Q Qian M Huang Y W Yu J Zhu Nanjing Electronic Devices Institute Nanjing 210016 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing 210016 China

In this paper 3D interconnects technologies used Cu pillars are discussed with respect to RF microsystem. While 2.5D Si interposer and 3D packaging seem to rely to cu pillars for the coming years, RF microsystem used the heterogeneous chip such as GaAs integration with Si interposers should be at low temperature. The pillars were constituted by Cu (2 micron) -Ni (2 micron) -Cu (3 micron) -Sn (1 micron) multilayer metal and total height is 8 micron on the front-side of the wafer by using electroplating. The wafer backside Cu pillar is obtained by temporary bonding, thinning and silicon surface etching. The RF interposers are stacked by Cu-Sn eutectic bonding at 260 °C. Analyzed the reliability of different pillar bonding structure.

关键词：

来源：评论

学校读者我要写书评

暂无评论

monolithically integrated 850 nm optical receiver front end

引用

Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics 2007年第3期27卷 350-355页

作者： Feng, Ou Feng, Zhong Yang, Lijie Jiao, Shilong Jiang, Youquan Chen, Tangsheng Li, Fuxiao Ye, Yutang Nanjing Electronic Devices Institute Nanjing 210016 China National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing 210016 China School of Optoelectronic Inf. Uni. of Electronic Science and Technology of China Chengdu 610054 China

An 850 nm monolithically integrated optical receiver front end has been developed with 0.5 μm GaAs PHEMT process, mesa process and interconnected photolithography technology between mesa and plane, which comprises a metal-semiconductor-metal (MSM) photodetector and a transimpedance preamplifier. The photodetector has a photosensitive area and a capacitance of 2000 μm2 and 0.15 pF respectively, as well as a dark current of less than 14 nA under a bias of 4 V. The transimpedance preamplifier has a -3 dB bandwidth close to 10 GHz, with a transimpedance of 43 dBΩ;The front end has a relatively clear output eye diagram for the 850 nm optical signal modulated by 2.5 Gb/s NRZ pseudorandom binary sequence.

关键词： Optical receivers

来源：评论

学校读者我要写书评

暂无评论

Corrigendum to “Accurate calculation of terahertz attenuation of a dielectric-coated metal wire with an intervening air gap using the engineering approach” [Optics Communications 284/16–17 (2011) 3990–3995]

引用

Optics Communications 2012年第5期285卷 857-857页

作者： Zhihui Wang Yong Zhang Ruimin Xu Weigan Lin School of Electronic Engineering University of Electronic Science and Technology of China Chengdu 611731 China National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing 210016 China

来源：评论

学校读者我要写书评

暂无评论

Comparison of spin photocurrent in devices based on in-plane or out-of-plane magnetized CoFeB spin detectors

引用

Physical Review B 2019年第4期100卷 045417-045417页

作者： Xiaodi Xue Laipan Zhu Wei Huang Xavier Marie Pierre Renucci Yu Liu Yang Zhang Xiaolin Zeng Jing Wu Bo Xu Zhanguo Wang Yonghai Chen Weifeng Zhang Yuan Lu Key Laboratory of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices Beijing 100083 China Henan Key Laboratory of Photovoltaic Materials Laboratory of Low-Dimensional Materials ScienceSchool of Physics & Electronics Henan University Kaifeng 475004 China Beijing Institute of Nanoenergy and Nanosystems Chinese Academy of Sciences Beijing 100083 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing 210016 China Université de Toulouse INSA-CNRS-UPS LPCNO135 Avenue de Rangueil F-31077 Toulouse France Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 China Université de Lorraine Institut Jean Lamour UMR CNRS 7198 campus ARTEM 2 Allée André Guinier 54011 Nancy France

We have measured a helicity-dependent photocurrent at zero external magnetic field in a device based on a semiconductor quantum well embedded in a p-i-n junction. The device is excited under vertical incidence with circularly polarized light. The spin filtering effect is evidenced in the temperature range 77–300 K owing to a CoFeB/MgO spin filter with out-of-plane magnetization in remanence. The helicity-dependent photocurrent is explored as a function of the temperature and bias. These characteristics are compared with those of a spin photocurrent device with in-plane magnetized CoFeB/MgO spin filter, excited under oblique incidence with circularly polarized light. In contrast to the in-plane spin filter device, the circularly polarized light asymmetry of the photocurrent in the out-of-plane device depends weakly on the external bias. The two devices are sensitive to the spin filtering of either the in-plane (Sx) or out-of-plane (Sz) photogenerated electron spin in the semiconductor quantum well. The helicity-dependent photocurrent results can be explained by the Dyakonov-Perel electron spin-relaxation mechanism. Our study reveals the giant spin relaxation anisotropy in III-V zinc-blende quantum wells in the presence of a vertical electric field.

关键词： Polarization of light Spin filtering Spin relaxation Spintronics Ferromagnets Quantum wells Femtosecond laser spectroscopy

来源：评论

学校读者我要写书评

暂无评论

低真空条件下石墨烯薄膜的制备工艺研究

低真空条件下石墨烯薄膜的制备工艺研究

引用

第十七届全国化合物半导体材料微波器件和光电器件学术会议

作者： Yun Li 李赟 Zhijun Yin 尹志军 Zhiming Zhu 朱志明 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanfing Electronic 微波毫米波单片集成和模块电路重点实验室南京电子器件研究所南京 210016

本文利用水平热壁式CVD外延炉开展了SiC热分解法制备石墨烯薄膜的实验,主要研究了不同的真空热处理时间对石墨烯薄膜生长的影响。SiC衬底的氢气在线刻蚀处理和热分解在同一炉次进行,高温时反应室释放出之前吸附的氢气不能有效地被分子... 详细信息

本文利用水平热壁式CVD外延炉开展了SiC热分解法制备石墨烯薄膜的实验,主要研究了不同的真空热处理时间对石墨烯薄膜生长的影响。SiC衬底的氢气在线刻蚀处理和热分解在同一炉次进行,高温时反应室释放出之前吸附的氢气不能有效地被分子泵抽除,SiC衬底的有效碳化时间有限,实验发现热处理时间超过30分钟之后,石墨烯层数并无明显变化。进一步加长热处理时间,石墨烯样品中出现局部氢插入层。

关键词：石墨烯薄膜碳化硅衬底制备工艺性能评价低真空条件

来源：评论

学校读者我要写书评

暂无评论

Integrating high-quality dielectrics with one-nanometer equivalent oxide thickness on two-dimensional electronic devices

arXiv

引用

arXiv 2019年

作者： Li, Weisheng Zhou, Jian Cai, Songhua Yu, Zhihao Zhang, Jialin Fang, Nan Li, Taotao Wu, Yun Chen, Tangsheng Xie, Xiaoyu Ma, Haibo Yan, Ke Dai, Ningxuan Wu, Xiangjin Zhao, Huijuan Wang, Zixuan He, Daowei Pan, Lijia Shi, Yi Wang, Peng Chen, Wei Nagashio, Kosuke Duan, Xiangfeng Wang, Xinran National Laboratory of Solid State Microstructures School of Electronic Science and Engineering Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing210093 China National Laboratory of Solid State Microstructures Jiangsu Key Laboratory of Artificial Functional Materials College of Engineering and Applied Sciences Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing210093 China Department of Chemistry National University of Singapore 3 Science Drive 3 117543 Singapore Department of Materials Engineering University of Tokyo Tokyo113-8656 Japan Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Device Institute Nanjing210016 China School of Chemistry and Chemical Engineering Nanjing University Nanjing210023 China Department of Chemistry and Biochemistry University of California Los AngelesCA United States

Two-dimensional (2D) semiconductors are widely recognized as attractive channel materials for low-power electronics. However, an unresolved challenge is the integration of high-quality, ultrathin high-κ dielectrics that fully meet the roadmap requirements for low-power applications. With a dangling-bond free surface, the deposition of dielectrics by atomic layer deposition (ALD) on 2D materials is usually characterized with nonuniform nucleation and island formation, producing a highly porous dielectric layer with serious leakage particularly at the small equivalent oxide thickness (EOT) limit. Here, we report the robust ALD of highly uniform high-κ dielectric on 2D semiconductors by using ~0.3 nm-thick exclusively monolayer molecular crystal as seeding layer. Ultrathin dielectrics down to 1 nm EOT is realized on graphene, MoS2 and WSe2, with considerably reduced roughness, density of interface states, leakage current and improved breakdown field compared to prior methods. Taking advantage of the reduced EOT, we demonstrate graphene RF transistors operating at 60 GHz, as well as MoS2 and WSe2 complementary metal-oxide-semiconductor (CMOS) transistors with Vdd =0.8 V and ideal subthreshold swing (SS) of 60 mV/dec, 20 nm-channel-length MoS2 transistors with on/off ratio over 107. These studies highlight that our dielectric integration method is generally applicable for different 2D materials, and compatible with top-down fabrication process on large-area chemical vapor deposited films. Copyright © 2019, The Authors. All rights reserved.

关键词： Atomic layer deposition

来源：评论

学校读者我要写书评

暂无评论

高质量GaN薄膜的MOCVD同质外延生长

高质量GaN薄膜的MOCVD同质外延生长

引用

第十七届全国化合物半导体材料微波器件和光电器件学术会议

作者： Liang Li 李亮 Zhonghui Li 李忠辉 Weike Luo 罗伟科 Xu Dong 董逊 Daqing Peng 彭大青 Dongguo Zhang 张东国微波毫米波单片集成和模块电路重点实验室南京电子器件研究所南京210016 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronics Device InstituteNaning210016 China

采用金属有机化学气相沉积(MOCVD)方法,在GaN自支撑衬底上同质外延生长了GaN薄膜,得到高质量的GaN外延薄膜。X射线衍射(XRD)结果显示其(002)面摇摆曲线半高宽小于100弧秒,原子力显微镜(AFM)照片上能看到连续的二维台阶流形貌,其表面租... 详细信息

采用金属有机化学气相沉积(MOCVD)方法,在GaN自支撑衬底上同质外延生长了GaN薄膜,得到高质量的GaN外延薄膜。X射线衍射(XRD)结果显示其(002)面摇摆曲线半高宽小于100弧秒,原子力显微镜(AFM)照片上能看到连续的二维台阶流形貌,其表面租糙度小于0.5nm,其位错密度低于l06cm-3。

关键词：半导体薄膜氮化镓同质外延金属有机化学气相沉积

来源：评论

学校读者我要写书评

暂无评论

低温GaN插入层对AlGaN/GaN二维电子气特性的改善

低温GaN插入层对AlGaN/GaN二维电子气特性的改善

引用

第十七届全国化合物半导体材料微波器件和光电器件学术会议

作者： Dongguo Zhaang 张东国 Zhonghui Li 李忠辉 Daqing Peng 彭大青 Xun Dong 董逊 Liang Li 李亮 Jinyu Ni 倪金玉 Science and Technology of Monolithic Integrated and Modules Circuits Key Laboratory Nanjing Electronic Devices Institute Nanfing 210016 China 微波毫米波单片集成和模块电路重点实验室南京电子器件研究所南京 210016

利用低压MOCVD技术在蓝宝石衬底上生长了AlGaN/GaN二维电子气(2DEG)材料,在GaN生长中插入一层低温GaN,并研究了低温GaN插入层对二维电子气输运特性的影响。使用原子力显微镜(AFM)和非接触霍尔测试仪测量了材料的表面形貌和电学特性,发... 详细信息

利用低压MOCVD技术在蓝宝石衬底上生长了AlGaN/GaN二维电子气(2DEG)材料,在GaN生长中插入一层低温GaN,并研究了低温GaN插入层对二维电子气输运特性的影响。使用原子力显微镜(AFM)和非接触霍尔测试仪测量了材料的表面形貌和电学特性,发现低温GaN插入层可以改善材料表面平整度并使AlGaN/GaN2DEG的电子迁移率有明显提高,GaN插入层温度为860℃的样品2DEG的电子迁移率达到2110 cm2/V.s。

关键词：异质结半导体低温氮化镓插入层二维电子气性能改善电子迁移率

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：