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检索条件"机构=Science and Technology on Monolithic Integrated Circuit and Modules Laboratory"
201 条 记 录,以下是191-200 订阅
排序:
Reliable and Broad-range Layer Identification of Au-assisted Exfoliated Large Area MoS2 and WS2 Using Reflection Spectroscopic Fingerprints
arXiv
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arXiv 2022年
作者: Zou, Bo Zhou, Yu Zhou, Yan Wu, Yanyan He, Yang Wang, Xiaonan Yang, Jinfeng Zhang, Lianghui Chen, Yuxiang Zhou, Shi Guo, Huaixin Sun, Huarui School of Science Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information System Harbin Institute of Technology Shenzhen518055 China Collaborative Innovation Center of Extreme Optics Shanxi University Shanxi Taiyuan030006 China State Key Laboratory of Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences Beijing100083 China University of Science and Technology of China Hefei230026 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China
The emerging Au-assisted exfoliation technique provides a wealth of large-area and high-quality ultrathin two-dimensional (2D) materials compared with traditional tape-based exfoliation. Fast, damage-free, and reliabl... 详细信息
来源: 评论
Research of temporary bonding for 3D integrational Microsystem
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Journal of Physics: Conference Series 2018年 第1期986卷
作者: G X Shi J Wu K Q Qian J Zhu Nanjing Electronic Devices Institute Nanjing 210016 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing 210016 China
Due to the thickness of current interposer must be very small, the thickness of active and passive wafers are no more than 200um, even less than 100um, sometime even less than 50um, So handing the thin wafer is the ke...
来源: 评论
Cu Pillar Low Temperature Bonding and Interconnection technology of for 3D RF Microsystem
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Journal of Physics: Conference Series 2018年 第1期986卷
作者: G X Shi K Q Qian M Huang Y W Yu J Zhu Nanjing Electronic Devices Institute Nanjing 210016 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing 210016 China
In this paper 3D interconnects technologies used Cu pillars are discussed with respect to RF microsystem. While 2.5D Si interposer and 3D packaging seem to rely to cu pillars for the coming years, RF microsystem used ...
来源: 评论
monolithically integrated 850 nm optical receiver front end
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Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics 2007年 第3期27卷 350-355页
作者: Feng, Ou Feng, Zhong Yang, Lijie Jiao, Shilong Jiang, Youquan Chen, Tangsheng Li, Fuxiao Ye, Yutang Nanjing Electronic Devices Institute Nanjing 210016 China National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing 210016 China School of Optoelectronic Inf. Uni. of Electronic Science and Technology of China Chengdu 610054 China
An 850 nm monolithically integrated optical receiver front end has been developed with 0.5 μm GaAs PHEMT process, mesa process and interconnected photolithography technology between mesa and plane, which comprises a ... 详细信息
来源: 评论
Corrigendum to “Accurate calculation of terahertz attenuation of a dielectric-coated metal wire with an intervening air gap using the engineering approach” [Optics Communications 284/16–17 (2011) 3990–3995]
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Optics Communications 2012年 第5期285卷 857-857页
作者: Zhihui Wang Yong Zhang Ruimin Xu Weigan Lin School of Electronic Engineering University of Electronic Science and Technology of China Chengdu 611731 China National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing 210016 China
来源: 评论
Comparison of spin photocurrent in devices based on in-plane or out-of-plane magnetized CoFeB spin detectors
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Physical Review B 2019年 第4期100卷 045417-045417页
作者: Xiaodi Xue Laipan Zhu Wei Huang Xavier Marie Pierre Renucci Yu Liu Yang Zhang Xiaolin Zeng Jing Wu Bo Xu Zhanguo Wang Yonghai Chen Weifeng Zhang Yuan Lu Key Laboratory of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices Beijing 100083 China Henan Key Laboratory of Photovoltaic Materials Laboratory of Low-Dimensional Materials ScienceSchool of Physics & Electronics Henan University Kaifeng 475004 China Beijing Institute of Nanoenergy and Nanosystems Chinese Academy of Sciences Beijing 100083 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing 210016 China Université de Toulouse INSA-CNRS-UPS LPCNO135 Avenue de Rangueil F-31077 Toulouse France Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 China Université de Lorraine Institut Jean Lamour UMR CNRS 7198 campus ARTEM 2 Allée André Guinier 54011 Nancy France
We have measured a helicity-dependent photocurrent at zero external magnetic field in a device based on a semiconductor quantum well embedded in a p-i-n junction. The device is excited under vertical incidence with ci... 详细信息
来源: 评论
低真空条件下石墨烯薄膜的制备工艺研究
低真空条件下石墨烯薄膜的制备工艺研究
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第十七届全国化合物半导体材料微波器件和光电器件学术会议
作者: Yun Li 李赟 Zhijun Yin 尹志军 Zhiming Zhu 朱志明 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanfing Electronic 微波毫米波单片集成和模块电路重点实验室 南京电子器件研究所南京 210016
本文利用水平热壁式CVD外延炉开展了SiC热分解法制备石墨烯薄膜的实验,主要研究了不同的真空热处理时间对石墨烯薄膜生长的影响。SiC衬底的氢气在线刻蚀处理和热分解在同一炉次进行,高温时反应室释放出之前吸附的氢气不能有效地被分子... 详细信息
来源: 评论
Integrating high-quality dielectrics with one-nanometer equivalent oxide thickness on two-dimensional electronic devices
arXiv
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arXiv 2019年
作者: Li, Weisheng Zhou, Jian Cai, Songhua Yu, Zhihao Zhang, Jialin Fang, Nan Li, Taotao Wu, Yun Chen, Tangsheng Xie, Xiaoyu Ma, Haibo Yan, Ke Dai, Ningxuan Wu, Xiangjin Zhao, Huijuan Wang, Zixuan He, Daowei Pan, Lijia Shi, Yi Wang, Peng Chen, Wei Nagashio, Kosuke Duan, Xiangfeng Wang, Xinran National Laboratory of Solid State Microstructures School of Electronic Science and Engineering Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing210093 China National Laboratory of Solid State Microstructures Jiangsu Key Laboratory of Artificial Functional Materials College of Engineering and Applied Sciences Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing210093 China Department of Chemistry National University of Singapore 3 Science Drive 3 117543 Singapore Department of Materials Engineering University of Tokyo Tokyo113-8656 Japan Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Device Institute Nanjing210016 China School of Chemistry and Chemical Engineering Nanjing University Nanjing210023 China Department of Chemistry and Biochemistry University of California Los AngelesCA United States
Two-dimensional (2D) semiconductors are widely recognized as attractive channel materials for low-power electronics. However, an unresolved challenge is the integration of high-quality, ultrathin high-κ dielectrics t... 详细信息
来源: 评论
高质量GaN薄膜的MOCVD同质外延生长
高质量GaN薄膜的MOCVD同质外延生长
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第十七届全国化合物半导体材料微波器件和光电器件学术会议
作者: Liang Li 李亮 Zhonghui Li 李忠辉 Weike Luo 罗伟科 Xu Dong 董逊 Daqing Peng 彭大青 Dongguo Zhang 张东国 微波毫米波单片集成和模块电路重点实验室 南京电子器件研究所南京210016 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronics Device InstituteNaning210016 China
采用金属有机化学气相沉积(MOCVD)方法,在GaN自支撑衬底上同质外延生长了GaN薄膜,得到高质量的GaN外延薄膜。X射线衍射(XRD)结果显示其(002)面摇摆曲线半高宽小于100弧秒,原子力显微镜(AFM)照片上能看到连续的二维台阶流形貌,其表面租... 详细信息
来源: 评论
低温GaN插入层对AlGaN/GaN二维电子气特性的改善
低温GaN插入层对AlGaN/GaN二维电子气特性的改善
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第十七届全国化合物半导体材料微波器件和光电器件学术会议
作者: Dongguo Zhaang 张东国 Zhonghui Li 李忠辉 Daqing Peng 彭大青 Xun Dong 董逊 Liang Li 李亮 Jinyu Ni 倪金玉 Science and Technology of Monolithic Integrated and Modules Circuits Key Laboratory Nanjing Electronic Devices Institute Nanfing 210016 China 微波毫米波单片集成和模块电路重点实验室 南京电子器件研究所南京 210016
利用低压MOCVD技术在蓝宝石衬底上生长了AlGaN/GaN二维电子气(2DEG)材料,在GaN生长中插入一层低温GaN,并研究了低温GaN插入层对二维电子气输运特性的影响。使用原子力显微镜(AFM)和非接触霍尔测试仪测量了材料的表面形貌和电学特性,发... 详细信息
来源: 评论