咨询与建议

限定检索结果

文献类型

  • 135 篇 会议
  • 66 篇 期刊文献

馆藏范围

  • 201 篇 电子文献
  • 0 种 纸本馆藏

日期分布

学科分类号

  • 140 篇 工学
    • 124 篇 电子科学与技术(可...
    • 84 篇 材料科学与工程(可...
    • 49 篇 化学工程与技术
    • 34 篇 电气工程
    • 20 篇 信息与通信工程
    • 13 篇 计算机科学与技术...
    • 11 篇 光学工程
    • 9 篇 冶金工程
    • 8 篇 仪器科学与技术
    • 8 篇 动力工程及工程热...
    • 6 篇 软件工程
    • 3 篇 网络空间安全
    • 2 篇 机械工程
    • 2 篇 轻工技术与工程
    • 1 篇 控制科学与工程
    • 1 篇 航空宇航科学与技...
    • 1 篇 生物医学工程(可授...
    • 1 篇 生物工程
  • 67 篇 理学
    • 49 篇 化学
    • 39 篇 物理学
    • 6 篇 数学
    • 4 篇 地质学
    • 1 篇 生物学
    • 1 篇 统计学(可授理学、...
  • 3 篇 管理学
    • 3 篇 管理科学与工程(可...

主题

  • 24 篇 gallium nitride
  • 13 篇 hemts
  • 12 篇 silicon carbide
  • 9 篇 indium phosphide
  • 8 篇 modfets
  • 7 篇 power amplifiers
  • 7 篇 inp
  • 7 篇 silicon
  • 6 篇 logic gates
  • 6 篇 performance eval...
  • 6 篇 heterojunction b...
  • 5 篇 scattering param...
  • 5 篇 microwave integr...
  • 5 篇 integrated circu...
  • 5 篇 aluminum gallium...
  • 5 篇 radio frequency
  • 4 篇 iii-v semiconduc...
  • 4 篇 simulation
  • 4 篇 schottky barrier...
  • 4 篇 substrates

机构

  • 78 篇 science and tech...
  • 45 篇 science and tech...
  • 30 篇 nanjing electron...
  • 10 篇 nanjing guobo el...
  • 9 篇 state key labora...
  • 9 篇 college of integ...
  • 7 篇 science and tech...
  • 6 篇 science and tech...
  • 6 篇 science and tech...
  • 6 篇 national key lab...
  • 5 篇 fundamental scie...
  • 5 篇 nanjing electron...
  • 5 篇 department of mi...
  • 5 篇 nanjing electron...
  • 4 篇 fundamental scie...
  • 4 篇 science and tech...
  • 4 篇 school of electr...
  • 3 篇 national asic sy...
  • 3 篇 center of materi...
  • 3 篇 key laboratory o...

作者

  • 29 篇 tangsheng chen
  • 23 篇 wei cheng
  • 19 篇 yuechan kong
  • 17 篇 haiyan lu
  • 15 篇 jianjun zhou
  • 13 篇 chen chen
  • 12 篇 chen tangsheng
  • 11 篇 bin niu
  • 10 篇 chen gang
  • 10 篇 bai song
  • 10 篇 zhou jianjun
  • 8 篇 zhonghui li
  • 8 篇 kai zhang
  • 8 篇 cheng wei
  • 8 篇 ruimin xu
  • 8 篇 yi zhang
  • 8 篇 yuan wang
  • 7 篇 li liang
  • 7 篇 li yun
  • 7 篇 oupeng li

语言

  • 188 篇 英文
  • 11 篇 中文
  • 2 篇 其他
检索条件"机构=Science and Technology on Monolithic Integrated Circuit and Modules Laboratory"
201 条 记 录,以下是21-30 订阅
排序:
A Heterogeneous Integration of GaAs Schottky Barrier Diode to Quartz Substrate Using Micro Transfer-Printing
A Heterogeneous Integration of GaAs Schottky Barrier Diode t...
收藏 引用
Asia Communications and Photonics Conference and Exhibition (ACP)
作者: Yuxuan Wang Kunpeng Dai Bin Niu Yuechan Kong Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing Electronic Devices Institute Nanjing China
Gallium Arsenide Schottky barrier diodes (GaAs SBDs) are widely used in terahertz (THz) applications. Quartz substrate has recently emerged as a promising platform for GaAs SBDs due to its intrinsically low permittivi... 详细信息
来源: 评论
A 52.5GHz-66GHz High Conversion Gain Frequency Tripler using $.13\mu \text{m SiGe}$ HBT process
A 52.5GHz-66GHz High Conversion Gain Frequency Tripler using...
收藏 引用
IEEE International Wireless Symposium (IWS)
作者: Lu Yuxiang Li Zekun Yu Jiayang Li Huanbo Zhou Peigen Lu Haiyan Chen Jixin State Key Laboratory of Millimeter Wave Southeast University Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory
A 52.5GHz-66GHz frequency tripler using $0.13\mu\mathrm{m}$ SiGe HBT process is presented, which adopts a single balanced structure, with a high conversion gain up to 14.3dB. A maximum saturated output power $(\mat... 详细信息
来源: 评论
Design of a 340 GHz GaN-Based Frequency Doubler with High Output Power
Design of a 340 GHz GaN-Based Frequency Doubler with High Ou...
收藏 引用
IEEE Asia-Pacific Conference on Antennas and Propagation (APCAP)
作者: Yiyuan Zheng Kai Zhang Kunpeng Dai Yuechan Kong Gang Lin Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing Electronic Devices Institute Nanjing China
This paper presents a high-power 340 GHz frequency doubler based on GaN Schottky barrier diode (SBD) technology. The proposed frequency doubler consists of a pair of GaN SBDs chips, a quartz circuit, as well as the tr... 详细信息
来源: 评论
A Tunable Active Polyphase Filter on InP DHBT technology  13
A Tunable Active Polyphase Filter on InP DHBT technology
收藏 引用
13th International Conference on Microwave and Millimeter Wave technology, ICMMT 2021
作者: He, Qian You, Fei Qian, Ting Xiao, Zehua Guo, Runnan Tao, Hongqi Zhang, Bin Fan, Yaojia University Of Electronic Science And Technology Of China School Of Electronic Science And Engineering Chengdu611731 China Nanjing Electronic Devices Institute Nanjing210016 China Science And Technology On Monolithic Integrated And Modules Laboratory Nanjing210016 China
This paper presents a two-stage tunable active polyphase filter (PPF) to achieve quadrature signals on 0.7-m InP DHBT technology. The transconductance of transistors and junction capacitance between bases and collecto... 详细信息
来源: 评论
Suppression of Short Channel Effects in Hydrogen- Terminated Diamond MISFETs Using an Al2 O3 / HfO2 Stacked Passivation Layer
Suppression of Short Channel Effects in Hydrogen- Terminated...
收藏 引用
Asia-Pacific Conference on Microwave
作者: Zhihao Chen Xinxin Yu Shuman Mao Yu Fu Jianjun Zhou Yuechan Kong Tangsheng Chen Ruimin Xu Bo Yan Yuehang Xu School of Electronic Science and Engineering University of Electronic Science and Technology of China Chengdu China Research Center of Integrated Circuits and Systems Yangtze Delta Region Institute (Huzhou) University of Electronic Science and Technology of China Huzhou China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China
The short channel effects (SCEs) are mainly caused by the generated insufficient depletion region under the gate, which can severely reduce the reliability of devices. In this paper, the effects are analyzed by the pr...
来源: 评论
System Design of Ultra-High Speed Large-Bandwidth CT $\sum\Delta$ Modulator
System Design of Ultra-High Speed Large-Bandwidth CT $\sum\D...
收藏 引用
International Conference on Microwave and Millimeter Wave technology Proceedings
作者: Kun Liu Yaqin Liu Yuhang Zhuang Yufeng Guo Youtao Zhang Xiaopeng Li Yi Zhang College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China Nanjing GuoBo Electronics Co. Ltd Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China State Key Laboratory of Millimeter Waves Nanjing China
This paper presents system design of an ultra-high speed continuous-time (CT) Sigma-Delta $(\Sigma\Delta)$ modulator in MATLAB/SIMULINK. With the help of Toolbox, zero-pole analysis and parameter optimization were c... 详细信息
来源: 评论
Low surface roughness gaas/si thin-film deposition using three-step growth method in mbe
Low surface roughness gaas/si thin-film deposition using thr...
收藏 引用
Asia-Pacific Conference on Silicon Carbide and Related Materials, APCSCRM 2019
作者: Wei, Wang Ben, Ma Hanchao, Gao Hailong, Yu Zhonghui, Li Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China
Epitaxial GaAs-on-Si is an ideal material system for studying the physics of mismatched heteroepitaxy of a polar semiconductor layer grown on a non-polar substrate like silicon. Understanding and optimization of the i... 详细信息
来源: 评论
Nondestructive visualization of graphene on Pt with methylene blue surface modification
收藏 引用
science China Materials 2022年 第10期65卷 2763-2770页
作者: He Kang Yanhui Zhang Yun Wu Shike Hu Jing Li Zhiying Chen Yanping Sui Shuang Wang Sunwen Zhao Runhan Xiao Guanghui Yu Songang Peng Zhi Jin Xinyu Liu State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Device InstituteNanjing 210016China Microwave Devices and Integrated Circuits Department Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China
Efficient large-scale nondestructive quality assessment of graphene on Pt is essential to the in-depth growth research and practical applications of ***,we present a very simple method for directly observing the domai... 详细信息
来源: 评论
A Near-Field Focusing Circularly Polarized Radial Line Slot Array Antenna
A Near-Field Focusing Circularly Polarized Radial Line Slot ...
收藏 引用
European Conference on Antennas and Propagation, EuCAP
作者: Liyuan Zhong Shufeng Zheng Hangqi Yang Yanxiang Yi Qi Luo Chao Gu School of Electronic Engineering Xidian University Xi'an China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China School of Physics Engineering and Computer Science University of Hertfordshire Hatfield UK ECIT Institute Queen's University Belfast Belfast UK
This paper presents the implementation of a near-field focusing (NFF) antenna on basis of radial line slot array (RLSA). The proposed NFF-RLSA antenna is derived from the conventional single-layer spiral-patterned RLS...
来源: 评论
Effect of X-ray irradiation on threshold voltage of AlGaN/GaN HEMTs with p-GaN and MIS Gates
收藏 引用
Nanotechnology and Precision Engineering 2020年 第4期3卷 241-243页
作者: Yongle Qi Denggui Wang Jianjun Zhou Kai Zhang Yuechan Kong Suzhen Wu Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices InstituteNanjing 210016China China Electronics Technology Group Corporation No.58 Research Institute Wuxi 204035China
Commercially available AlGaN/GaN high-electron-mobility transistors(HEMTs)are beginning to enter the public scene froma range of *** on previous studies,commercial GaN-based electronics are expected to be tolerant to ... 详细信息
来源: 评论