咨询与建议

限定检索结果

文献类型

  • 135 篇 会议
  • 66 篇 期刊文献

馆藏范围

  • 201 篇 电子文献
  • 0 种 纸本馆藏

日期分布

学科分类号

  • 140 篇 工学
    • 124 篇 电子科学与技术(可...
    • 84 篇 材料科学与工程(可...
    • 49 篇 化学工程与技术
    • 34 篇 电气工程
    • 20 篇 信息与通信工程
    • 13 篇 计算机科学与技术...
    • 11 篇 光学工程
    • 9 篇 冶金工程
    • 8 篇 仪器科学与技术
    • 8 篇 动力工程及工程热...
    • 6 篇 软件工程
    • 3 篇 网络空间安全
    • 2 篇 机械工程
    • 2 篇 轻工技术与工程
    • 1 篇 控制科学与工程
    • 1 篇 航空宇航科学与技...
    • 1 篇 生物医学工程(可授...
    • 1 篇 生物工程
  • 67 篇 理学
    • 49 篇 化学
    • 39 篇 物理学
    • 6 篇 数学
    • 4 篇 地质学
    • 1 篇 生物学
    • 1 篇 统计学(可授理学、...
  • 3 篇 管理学
    • 3 篇 管理科学与工程(可...

主题

  • 24 篇 gallium nitride
  • 13 篇 hemts
  • 12 篇 silicon carbide
  • 9 篇 indium phosphide
  • 8 篇 modfets
  • 7 篇 power amplifiers
  • 7 篇 inp
  • 7 篇 silicon
  • 6 篇 logic gates
  • 6 篇 performance eval...
  • 6 篇 heterojunction b...
  • 5 篇 scattering param...
  • 5 篇 microwave integr...
  • 5 篇 integrated circu...
  • 5 篇 aluminum gallium...
  • 5 篇 radio frequency
  • 4 篇 iii-v semiconduc...
  • 4 篇 simulation
  • 4 篇 schottky barrier...
  • 4 篇 substrates

机构

  • 78 篇 science and tech...
  • 45 篇 science and tech...
  • 30 篇 nanjing electron...
  • 10 篇 nanjing guobo el...
  • 9 篇 state key labora...
  • 9 篇 college of integ...
  • 7 篇 science and tech...
  • 6 篇 science and tech...
  • 6 篇 science and tech...
  • 6 篇 national key lab...
  • 5 篇 fundamental scie...
  • 5 篇 nanjing electron...
  • 5 篇 department of mi...
  • 5 篇 nanjing electron...
  • 4 篇 fundamental scie...
  • 4 篇 science and tech...
  • 4 篇 school of electr...
  • 3 篇 national asic sy...
  • 3 篇 center of materi...
  • 3 篇 key laboratory o...

作者

  • 29 篇 tangsheng chen
  • 23 篇 wei cheng
  • 19 篇 yuechan kong
  • 17 篇 haiyan lu
  • 15 篇 jianjun zhou
  • 13 篇 chen chen
  • 12 篇 chen tangsheng
  • 11 篇 bin niu
  • 10 篇 chen gang
  • 10 篇 bai song
  • 10 篇 zhou jianjun
  • 8 篇 zhonghui li
  • 8 篇 kai zhang
  • 8 篇 cheng wei
  • 8 篇 ruimin xu
  • 8 篇 yi zhang
  • 8 篇 yuan wang
  • 7 篇 li liang
  • 7 篇 li yun
  • 7 篇 oupeng li

语言

  • 188 篇 英文
  • 11 篇 中文
  • 2 篇 其他
检索条件"机构=Science and Technology on Monolithic Integrated Circuit and Modules Laboratory"
201 条 记 录,以下是31-40 订阅
排序:
A 14-22GHz monolithic Double-Balanced Passive Mixer
A 14-22GHz Monolithic Double-Balanced Passive Mixer
收藏 引用
International Conference on Microwave and Millimeter Wave technology Proceedings
作者: Hu Zhang Lei Yang Sai sai Jing Yufeng Guo Hao Gao Yi Zhang College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China Nanjing GuoBo Electronics Co. Ltd Nanjing China Silicon Austria Labs Linz Austria Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China State Key Laboratory of Millimeter Waves Nanjing China
In this paper, a passive double-balanced mixer operating at 14-22GHz is designed based on the $0.15_{5}\mathrm{m}$ pHEMT GaAs process provided by WIN Semiconductor. The RF/LO frequency of the mixer is 14GHz-22GHz, a... 详细信息
来源: 评论
A 17–26.5 GHz 42.5 dBm broadband and highly efficient gallium nitride power amplifier design
收藏 引用
Frontiers of Information technology & Electronic Engineering 2022年 第2期23卷 346-350页
作者: Ming LI Zhiqun LI Quan ZHENG Lanfeng LIN Hongqi TAO Institute of RF-&OE-ICs Southeast UniversityNanjing 210096China Science and Technology on Monolithic Integrated and Modules Laboratory Nanjing Electronic Devices InstituteNanjing 210016China Engineering Research Center of RF-ICs and RF-Systems Ministry of EducationNanjing 210096China
A gallium nitride(GaN)power amplifier monolithic microwave integrated circuit(MMIC)with a wide band and high efficiency in the microwave frequency band is proposed in this *** power amplifier MMIC uses a 0.15^im GaN h... 详细信息
来源: 评论
A Fully integrated Front-End MMIC Based on GaN Doherty Power Amplifier for Mm-Wave 5G
A Fully Integrated Front-End MMIC Based on GaN Doherty Power...
收藏 引用
International Conference on Microwave and Millimeter Wave technology Proceedings
作者: Runnan Guo Chenrui Peng Hao Liu Yingfan Feng Zheng Yin Hongqi Tao Nanjing Electronic Devices Institute Nanjing China China Electronics Technology Group Corporation Academy of Electronics and Information Technology Beijing China Science and Technology on Monolithic Integrated and Modules Laboratory Nanjing China
A 26 GHz GaN Doherty amplifier MMIC with high 8dB back-off efficiency and simplified load modulation network, and a fully integrated RF front-end MMIC based on this Doherty PA are reported in this paper for mm-wave 5G... 详细信息
来源: 评论
Simplified Evaluation on Cooling Performance of Silicon Microfluidic Interposer
Simplified Evaluation on Cooling Performance of Silicon Micr...
收藏 引用
International Conference on (ICEPT) Electronic Packaging technology
作者: Miao Yu Min Huang Jian Zhu Nanjing University School of Electronic Science and Engineering Nanjing Electronic Devices Institute Nanjing China Nanjing Electronic Devices Institute Nanjing China Nanjing University School of Electronic Science and Engineering Nanjing Electronic Devices Institute Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China
simplified evaluation methods for the analysis on the thermal and hydraulic properties of the silicon microfluidic interposer for GaN power device cooling are proposed in this work. The microjet-microchannel hybrid st...
来源: 评论
Design of A 0.5~50GHz Differential Distributed Amplifier Based on 0.7μm InP HBT technology
Design of A 0.5~50GHz Differential Distributed Amplifier Bas...
收藏 引用
International Conference on Microwave and Millimeter Wave technology Proceedings
作者: Yuhang Zhuang Xin Yan Guanglai Wu Hao Gao Youtao Zhang Yujie Tang Yi Zhang College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China Eindhoven University of Technology Holland GuoBo Electronics Co. Ltd Nanjing China National and local joint engineering Laboratory for RF Integration and Micro assembly Technology Nanjing China Key Laboratory of Microwave millimeter Wave monolithic Integrated and Modular Circuits Nanjing China State Key Laboratory of Millimeter Wave Southeast University Nanjing
This paper presents a 0.5∽50GHz differential distributed amplifier implemented in a 0.7μm InP HBT technology. The amplifier uses a common-source common-gate structure with a source follower as the gain unit, and the... 详细信息
来源: 评论
Microfluidic Silicon Interposer for Thermal Management of Gan Device Integration
SSRN
收藏 引用
SSRN 2022年
作者: Yu, Miao Zhang, Hao Huang, Min Zhang, Hongze Zhu, Jian School of Electronic Science and Engineering Nanjing University Nanjing21002 China Nanjing Electronic Devices Institute Nanjing210016 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing210016 China
The cooling capability of the silicon interposers (SIs) with microjet and microchannel cooling for GaN device has been validated by practical implementations and characterized by numerical analysis in this work. A 5.3... 详细信息
来源: 评论
A High-Speed Level Shifter with dVs/dt Noise Immunity Enhancement Structure for 200V monolithic GaN Power IC
A High-Speed Level Shifter with dVs/dt Noise Immunity Enhanc...
收藏 引用
International Symposium on Power Semiconductor Devices and Ics (ISPSD)
作者: Yifei Zheng Qing Yuan Deyuan Song Yutao Ying Jing Zhu Weifeng Sun Long Zhang Sheng Li Denggui Wang Jianjun Zhou Sen Zhang Nailong He National ASIC System Engineering Research Center Southeast University Nanjing China Wuxi Chipown Micro-electronics limited Wuxi China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China Technology development department CSMC Technologies Corporation Wuxi China
monolithic integration has been demonstrated to be an ideal solution to minimize the parasitics in GaN power IC. Nonetheless, the current commercially GaN process for power IC is far less mature and only n-type HEMTs ...
来源: 评论
11THz GaAs Terahertz Schottky Barrier Diode with Sub 0.5 fF C mathrm{j}0}  13
11THz GaAs Terahertz Schottky Barrier Diode with Sub 0.5 fF ...
收藏 引用
13th UK-Europe-China Workshop on Millimetre-Waves and Terahertz Technologies, UCMMT 2020
作者: Niu, Bin Fan, Daoyu Lin, Gang Dai, Kunpeng Lu, Hai-Yan Chen, Tangsheng Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing Chip Valley Industrial Technology Institute Nanjing210016 China
GaAs terahertz schottky barrier diode SBD has been a major technology in terahertz wave multiplexing, mixing and direct detection for decades, due to its high mobility and low capacity. In this paper, T-Anode GaAs ter... 详细信息
来源: 评论
A 100MS/s Pipeline ADC Without Calibration In 0.18µm CMOS technology
A 100MS/s Pipeline ADC Without Calibration In 0.18µm CMOS T...
收藏 引用
International Conference on Microwave and Millimeter Wave technology Proceedings
作者: Yi Zhang Yaqin Liu Hongliang Xia Lei Yang Yang Wang Youtao Zhang Yufeng Guo College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing China State Key Laboratory of Millimeter Waves Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing GuoBo Electronics Co. Ltd Nanjing China Nanjing Vocational University of Industry Technology Nanjing China
Based on SMIC 180nm CMOS process and 1.8/3.3V power supply voltage, a high-speed pipeline ADC is designed in this paper. After a comprehensive consideration of conversion rate and accuracy, the pipelined architecture ... 详细信息
来源: 评论
Threshold Voltage Stability Enhancing technology for p-GaN HEMTs Using Hybrid Gate Structure
IEEE Electron Device Letters
收藏 引用
IEEE Electron Device Letters 2022年 1-1页
作者: Zhang, Chi Li, Mingfei Li, Sheng Liu, Siyang Wang, Denggui Lu, Weihao Ma, Yanfeng Liu, Mengli Wei, Jiaxing Zhang, Long Zhou, Jianjun Bai, Song Sun, Weifeng National ASIC System Engineering Research Centre Southeast University Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China State Key Laboratory of Wide-Bandgap Semiconductor Power Electronic Devices Nanjing Electronic Devices Institute Nanjing China
A novel hybrid gate p-GaN power high-electron mobility transistor (Hyb-HEMT) technology is proposed in this work to effectively enhance threshold voltage (Vth) stability without significant gate leakage current (Igss)... 详细信息
来源: 评论