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International Conference on Microwave and Millimeter Wave technology Proceedings

作者： Hu Zhang Lei Yang Sai sai Jing Yufeng Guo Hao Gao Yi Zhang College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China Nanjing GuoBo Electronics Co. Ltd Nanjing China Silicon Austria Labs Linz Austria Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China State Key Laboratory of Millimeter Waves Nanjing China

ISBN: (纸本)9781665482271

In this paper, a passive double-balanced mixer operating at 14-22GHz is designed based on the $0.15_{5}\mathrm{m}$ pHEMT GaAs process provided by WIN Semiconductor. The RF/LO frequency of the mixer is 14GHz-22GHz, and the IF frequency range is DC-4GHz. The ring-shaped mixing ring is composed of four MOS transistors connected with drain and source, and the RF and LO ports are spiral Marchand balun. The simulation results show that when the LO power is 13dBm, the frequency conversion loss is about 10dB, the isolation of LO/RF port and LO/IF port are both greater than 30dB, and that of RF/IF port is greater than 20dB. Chip size is $1.5 \text{mm}\times 0.9\text{mm}$ .

关键词： Resistors Radio frequency MOSFET Spirals Baluns Simulation PHEMTs

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A 17–26.5 GHz 42.5 dBm broadband and highly efficient gallium nitride power amplifier design

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Frontiers of Information technology & Electronic Engineering 2022年第2期23卷 346-350页

作者： Ming LI Zhiqun LI Quan ZHENG Lanfeng LIN Hongqi TAO Institute of RF-&OE-ICs Southeast UniversityNanjing 210096China Science and Technology on Monolithic Integrated and Modules Laboratory Nanjing Electronic Devices InstituteNanjing 210016China Engineering Research Center of RF-ICs and RF-Systems Ministry of EducationNanjing 210096China

A gallium nitride(GaN)power amplifier monolithic microwave integrated circuit(MMIC)with a wide band and high efficiency in the microwave frequency band is proposed in this *** power amplifier MMIC uses a 0.15^im GaN high electron mo-bility transistor(HEMT)*** operating frequency band of the amplifier can cover the whole K-band,i.e.,17-26.5 GHz.

关键词： amplifier power MMIC

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A Fully integrated Front-End MMIC Based on GaN Doherty Power Amplifier for Mm-Wave 5G

A Fully Integrated Front-End MMIC Based on GaN Doherty Power...

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International Conference on Microwave and Millimeter Wave technology Proceedings

作者： Runnan Guo Chenrui Peng Hao Liu Yingfan Feng Zheng Yin Hongqi Tao Nanjing Electronic Devices Institute Nanjing China China Electronics Technology Group Corporation Academy of Electronics and Information Technology Beijing China Science and Technology on Monolithic Integrated and Modules Laboratory Nanjing China

ISBN: (纸本)9781665482271

A 26 GHz GaN Doherty amplifier MMIC with high 8dB back-off efficiency and simplified load modulation network, and a fully integrated RF front-end MMIC based on this Doherty PA are reported in this paper for mm-wave 5G application. The individual Doherty PA achieves up to 34% and 27% PAE at saturated and 8dB back-off respectively. And in the RF front-end MMIC, there are still PAE of 26%@Sat. and 24.7%@8dB-back-off PAE. The whole RF front-end MMIC could provide more than 35dBm peak output power for transmit, and 18dB linear gain, 3.6dB noise figure for receive in $24\sim 28\text{GHz}$ . The chip sizes of Doherty PA and front-end MMIC are $3.0\text{mm}\times 1.6\text{mm}$ and $3.0\text{mm} \times 2.4\text{mm}$ .

关键词： Radio frequency Noise figure Microwave integrated circuits 5G mobile communication Millimeter wave technology Power amplifiers Modulation

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Simplified Evaluation on Cooling Performance of Silicon Microfluidic Interposer

Simplified Evaluation on Cooling Performance of Silicon Micr...

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International Conference on (ICEPT) Electronic Packaging technology

作者： Miao Yu Min Huang Jian Zhu Nanjing University School of Electronic Science and Engineering Nanjing Electronic Devices Institute Nanjing China Nanjing Electronic Devices Institute Nanjing China Nanjing University School of Electronic Science and Engineering Nanjing Electronic Devices Institute Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China

simplified evaluation methods for the analysis on the thermal and hydraulic properties of the silicon microfluidic interposer for GaN power device cooling are proposed in this work. The microjet-microchannel hybrid structure and the parallel microchannel structure are analyzed and compared based on the theoretical and empirical equations. It is depicted that water realizes the best cooling performance among the common coolants driven by the identical pressure in the parallel microchannel structure. The convective heat transfer thermal resistance and heat transfer coefficient of the microjet-microchannel hybrid structure exhibit 22.4 % decrease and 2.24 times enhancement in comparison to the parallel microchannel structure on the conditions of the identical pressure and volume flow rate, respectively.

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Design of A 0.5~50GHz Differential Distributed Amplifier Based on 0.7μm InP HBT technology

Design of A 0.5~50GHz Differential Distributed Amplifier Bas...

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International Conference on Microwave and Millimeter Wave technology Proceedings

作者： Yuhang Zhuang Xin Yan Guanglai Wu Hao Gao Youtao Zhang Yujie Tang Yi Zhang College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China Eindhoven University of Technology Holland GuoBo Electronics Co. Ltd Nanjing China National and local joint engineering Laboratory for RF Integration and Micro assembly Technology Nanjing China Key Laboratory of Microwave millimeter Wave monolithic Integrated and Modular Circuits Nanjing China State Key Laboratory of Millimeter Wave Southeast University Nanjing

ISBN: (数字)9798350389968

ISBN: (纸本)9798350389975

This paper presents a 0.5∽50GHz differential distributed amplifier implemented in a 0.7μm InP HBT technology. The amplifier uses a common-source common-gate structure with a source follower as the gain unit, and the transmission line selects the grounded coplanar waveguide. At the same time, a transmission is introduced to peak the high-frequency gain and expand the bandwidth. The simulation results show that the differential-mode gain of the amplifier is typically 12 dB in the frequency range of 0.5 to 50 GHz, with a flatness of ±1.5 dB. The input and output return losses are both less than -10 dB, and the output 1dB compression point > 10dBm.

关键词： Distributed amplifiers Microwave technology Simulation Millimeter wave technology Bandwidth Heterojunction bipolar transistors Topology

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Microfluidic Silicon Interposer for Thermal Management of Gan Device Integration

SSRN

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SSRN 2022年

作者： Yu, Miao Zhang, Hao Huang, Min Zhang, Hongze Zhu, Jian School of Electronic Science and Engineering Nanjing University Nanjing21002 China Nanjing Electronic Devices Institute Nanjing210016 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing210016 China

The cooling capability of the silicon interposers (SIs) with microjet and microchannel cooling for GaN device has been validated by practical implementations and characterized by numerical analysis in this work. A 5.3 mm × 3.5 mm × 0.08 mm GaN power amplifier (PA) with heating power of ~ 100 W integrated on SI is applied to evaluate the cooling performance of both microfluidic cooling configurations. The maximum hotspot power density of the GaN chip achieves 336.0 ~ 340.5 W/mm 2 , and the average chip power density is 539.0 ~ 546.3 W/cm 2 in the experiments. The SI is integrated with the GaN chip and micro-assembled in a test cube. The surface temperature distributions of the GaN chip are measured with different flow rate at 70 ℃ ambient temperature, and the overall thermal resistance with microjet cooling has 7.11 ~ 7.72 % reduction and its heat transfer coefficient (HTC) increases 12.3 ~ 28.3 % comparing to that with microchannel cooling at the pumping power of 0.5 ~ 1.5 W. The material properties of GaN chip and SI are extracted from the measurement results and support the analysis of the thermal and hydraulic properties of both microfluidic SIs numerically. Their cooling performance and efficiency are evaluated and compared based on the performance evaluation criteria (PEC), field synergy number and entropy generation rate. According to the evaluation results, while the PEC of microjet and microchannel SIs increases with the pumping power, the microjet SI can contribute to the enhancement of the synergetic relation between the flow and temperature fields and reduction of total irreversibility in heat transfer process comparing to the microchannel SI in pursuit of low overall thermal resistance. The field synergy number can improve 90.40 % and the argument entropy generation rate can be 0.376 when the overall thermal resistance is 1.35 K/W. © 2022, The Authors. All rights reserved.

关键词： Gallium nitride

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A High-Speed Level Shifter with dVs/dt Noise Immunity Enhancement Structure for 200V monolithic GaN Power IC

A High-Speed Level Shifter with dVs/dt Noise Immunity Enhanc...

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International Symposium on Power Semiconductor Devices and Ics (ISPSD)

作者： Yifei Zheng Qing Yuan Deyuan Song Yutao Ying Jing Zhu Weifeng Sun Long Zhang Sheng Li Denggui Wang Jianjun Zhou Sen Zhang Nailong He National ASIC System Engineering Research Center Southeast University Nanjing China Wuxi Chipown Micro-electronics limited Wuxi China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China Technology development department CSMC Technologies Corporation Wuxi China

monolithic integration has been demonstrated to be an ideal solution to minimize the parasitics in GaN power IC. Nonetheless, the current commercially GaN process for power IC is far less mature and only n-type HEMTs are available. Therefore, it is difficult for high voltage level shifters to achieve high speed. This work implements a level shifter for GaN IC to achieve both small response time and high $\mathrm{d}V_{\mathrm{S}}/\text{dt}$ noise immunity without complicated signal processing circuits, thus delay and conduction loss will be minimized. The proposed circuit was fabricated in a $1\mu\mathrm{m}$ GaN-on-Silicon process and measured results were performed to verify the characteristics.

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11THz GaAs Terahertz Schottky Barrier Diode with Sub 0.5 fF C mathrm{j}0} 13

11THz GaAs Terahertz Schottky Barrier Diode with Sub 0.5 fF ...

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13th UK-Europe-China Workshop on Millimetre-Waves and Terahertz Technologies, UCMMT 2020

作者： Niu, Bin Fan, Daoyu Lin, Gang Dai, Kunpeng Lu, Hai-Yan Chen, Tangsheng Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing Chip Valley Industrial Technology Institute Nanjing210016 China

ISBN: (纸本)9781728190648

GaAs terahertz schottky barrier diode SBD has been a major technology in terahertz wave multiplexing, mixing and direct detection for decades, due to its high mobility and low capacity. In this paper, T-Anode GaAs terahertz SBD was presented with its C{\mathrm{j}0} scaled into sub-fF range. Scalling C-V measurement showed C{\mathrm{j}0} without parasitic capacity reached 0.476fF for the 0.5\mu\mathrm{m} anode diameter device. With the relative low series resistance Rs of 28.8\mathrm{\Omega}, cutoff frequency f{\mathrm{t}} reached 11.6THz. The whole process was based on 4 inch GaAs wafer, guarantee stability and conformity in terahertz GaAs SBD integrated circuits working over 1THz. © 2020 IEEE.

关键词： Schottky barrier diodes

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A 100MS/s Pipeline ADC Without Calibration In 0.18µm CMOS technology

A 100MS/s Pipeline ADC Without Calibration In 0.18µm CMOS T...

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International Conference on Microwave and Millimeter Wave technology Proceedings

作者： Yi Zhang Yaqin Liu Hongliang Xia Lei Yang Yang Wang Youtao Zhang Yufeng Guo College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing China State Key Laboratory of Millimeter Waves Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing GuoBo Electronics Co. Ltd Nanjing China Nanjing Vocational University of Industry Technology Nanjing China

ISBN: (纸本)9781665482271

Based on SMIC 180nm CMOS process and 1.8/3.3V power supply voltage, a high-speed pipeline ADC is designed in this paper. After a comprehensive consideration of conversion rate and accuracy, the pipelined architecture is finally determined to be $\boldsymbol{3.5}\mathbf{b}\boldsymbol{\times 3+5}\mathbf{b.}$ The redundant calibration technology is adopted between each stage to reduce the influence of comparator offset on ADC accuracy. To reduce power consumption and area, SHA-less sampling is adopted. The traditional bootstrap switch is improved to dynamically change the substrate potential so as to reduce the influence of leakage in SHA-less sampling circuit. The post-simulation results shows that the high-speed pipeline ADC designed in this paper can reach 9.97-bit ENOB and 67.76 dB SFDR under the sampling frequency of 100MS/s and input signal frequency of Nyquist, the overall power consumption is about 390mW, and the overall area of the layout is 4.56mm 2 .

关键词： Microwave integrated circuits Power demand Pipelines Layout Voltage Microwave circuits Calibration

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Threshold Voltage Stability Enhancing technology for p-GaN HEMTs Using Hybrid Gate Structure

IEEE Electron Device Letters

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IEEE Electron Device Letters 2022年 1-1页

作者： Zhang, Chi Li, Mingfei Li, Sheng Liu, Siyang Wang, Denggui Lu, Weihao Ma, Yanfeng Liu, Mengli Wei, Jiaxing Zhang, Long Zhou, Jianjun Bai, Song Sun, Weifeng National ASIC System Engineering Research Centre Southeast University Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China State Key Laboratory of Wide-Bandgap Semiconductor Power Electronic Devices Nanjing Electronic Devices Institute Nanjing China

A novel hybrid gate p-GaN power high-electron mobility transistor (Hyb-HEMT) technology is proposed in this work to effectively enhance threshold voltage (Vth) stability without significant gate leakage current (Igss) degradation. In this device concept, gate structure consists of spaced ohmic-type p-GaN metal dots and Schottky-type p-GaN metal. Charge storage effect can be alleviated through a free-carrier “discharge path” induced by ohmic-type p-GaN region, thus enhancing the Vth stability. The surrounding geometry distribution of Schottky-type p-GaN metal can take full advantage of depletion region, ensuring a relatively low Igss. It is experimentally demonstrated that hybrid gate structure can successfully suppress Vth shift within only 0.03V under 1200s DC drain/gate bias stress and the activation energy (EA) of proposed Hyb-HEMT is only 0.59eV, which indicates Hyb-HEMT owns shallower traps, leading to easier discharge of the induced stored charges. Meanwhile, experimental results and the mix-mode simulation prove that no carrier injection or trapping effect occurs in p-GaN layer after repetitive reverse freewheeling stress for the Hyb-HEMT device. IEEE

关键词： Threshold voltage

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