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10th International Conference on Microwave and Millimeter Wave technology, ICMMT 2018

作者： Zhang, K. Zhu, G.R. Kong, Y.C. Chen, T.S. Nanjing Electronic Devices Institute Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing210016 China

ISBN: (纸本)9781538624166

We report excellent dc and RF performance of high-linearity AIGaN/GaN FinFETs with 100 nm T-gate. Besides a high fT of 65 GHz enabled by scaled gate length, good linearity characteristics of Gm and fT/fmax are demonstrated. Loadpull measurements show that the proposed FinFETs achieve a maximum Pout of 2.98 W/mm with an associated PAE of 64% at 4 GHz and Vd=10V, At 18 GHz, Pout and PAE turn out to 2.73 W/mm and 48%, respectively. To the best of our knowledge, this is the first demonstration of high-linearity GaN FinFETs which operate at Ku-band. © 2018 IEEE.

关键词： Gallium nitride

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4.5kV SiC JBS diodes

4.5kV SiC JBS diodes

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2013 International Conference on Precision Mechanical Instruments and Measurement technology, ICPMIMT 2013

作者： Tao, Yong Hong Huang, Run Hua Chen, Gang Bai, Song Li, Yun Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing 210016 China

High voltage 4H-SiC junction barrier schottky (JBS) diode with breakdown voltage higher than 4.5 kV has been fabricated. The doping level and thickness of the N-type drift layer and the device structure have been performed by numerical simulations. The thickness of the device epilayer is 50 μm, and the doping concentration is 1.2×1015 cm-3. A floating guard rings edge termination has been used to improve the effectiveness of the edge termination technique. The diodes can block a reverse voltage of at least 4.5 kV, and the on-state current density was 80 A/cm2 at VF =4 V. © 2013 Trans Tech Publications Ltd, Switzerland.

关键词： Silicon carbide

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DC magnetic field modulated doubly balanced monolithic mixer using magnetic thin film baluns

DC magnetic field modulated doubly balanced monolithic mixer...

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2012 International Conference on Microwave and Millimeter Wave technology, ICMMT 2012

作者： Li, Hui Kong, Cen Chen, Xiaojian Wang, Weibo Zhou, Jianjun Chen, Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Device Institute Nanjing 210016 China

ISBN: (纸本)9781467321839

A novel DC Magnetic Field modulated doubly balanced monolithic mixer consisting of NiFe-SiOx magnetic thin film spiral transformer-baluns is presented first time. The -3dB bandwidth of the mixer from original L/S-band (1.3-3GHz) was modulated to L/C-band (1.4-5.5GHz) while a DC magnetic field was applied. Besides, the conversion loss of the mixer was improved by 1dB decreasion at the same time. The fabrication process of the mixer was fully compatible with standard monolithic microwave integrated circuit (MMIC) process. © 2012 IEEE.

关键词： Silicon compounds

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High breakdown voltage GaN HEMT device fabricated on self-standing GaN substrate

High breakdown voltage GaN HEMT device fabricated on self-st...

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2013 International Conference on Precision Mechanical Instruments and Measurement technology, ICPMIMT 2013

作者： Zhou, Jian Jun Li, Liang Lu, Hai Yan Kong, Ceng Kong, Yue Chan Chen, Tang Sheng Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing 210016 China

In this letter, a high breakdown voltage GaN HEMT device fabricated on semi-insulating self-standing GaN substrate is presented. High quality AlGaN/GaN epilayer was grown on self-standing GaN substrate by metal organic chemical vapor deposition. A 0.8μm gate length GaN HEMT device was fabricated with oxygen plasma treatment. By using oxygen plasma treatment, gate forward working voltage is increased, and a breakdown voltage of more than 170V is demonstrated. The measured maximum drain current of the device is larger than 700 mA/mm at 4V gate bias voltage. The maximum transconductance of the device is 162 mS/mm. In addition, high frequency performance of the GaN HEMT device is also obtained. The current gain cutoff frequency and power gain cutoff frequency are 19.7 GHz and 32.8 GHz, respectively. A high fT-LG product of 15.76 GHz&bullμm indicating that homoepitaxy technology is helpful to improve the frequency performance of the device. © 2013 Trans Tech Publications Ltd, Switzerland.

关键词： Aluminum gallium nitride

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Influence of the etching process on the surface morphology of 4H-SiC substrate used in the epitaxial graphene

Influence of the etching process on the surface morphology o...

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Asia-Pacific Conference on Silicon Carbide and Related Materials, APCSCRM 2018

作者： Zhao, Zhifei Li, Yun Wang, Yi Zhou, Ping Yun, Wu Li, Zhonghui Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China

ISBN: (纸本)9783035713855

The morphology of the in-situ etching process on Si-face and C-face 4H-SiC, by annealing in a hydrogen environment, is studied by atomic force microscopy (AFM). The uniform step-terrace morphology of both the Si-face and C-face 4H-SiC is achieved with the assistance of carbon/silicon flux. The full width at half maximum (FWHM) of Raman 2D peak for the graphene grown on the uniform step-terrace morphology of the Si-face and C-face is 36.2 cm-1 and 22 cm-1, respectively. © 2019 Trans Tech Publications Ltd, Switzerland.

关键词： Silicon carbide

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Influence of SiH4 flow rate on GaN films with in-situ SiNx mask on sapphire surface

Influence of SiH4 flow rate on GaN films with in-situ SiNx m...

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3rd International Conference on Materials science and Manufacturing, ICMSM 2014

作者： Li, Zhong Hui Peng, Da Qing Luo, Wei Ke Li, Liang Zhang, Dong Guo Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing 210016 China

ISBN: (纸本)9783038350460

Sapphire substrate was treated by SiH4 under NH3 atmosphere before GaN growth and nano-size islands SiNx mask was formed on the substrate. Properties of GaN films were investigated by high resolution X-ray diffraction, photoluminescence and transmission electron microscopy. The results indicated that the SiH4 flow rate is an important factor affecting the size and density of SiNx mask besides SiH4 treatment time. The GaN films grown on the SiNx-patterned sapphire substrate revealed an epitaxial lateral overgrowth mode, which affected 3D to 2D growth time and the microstructures of GaN films. The lowest FWHM value of (102) rocking curve was 286 arcsec. as the SiH4 flow rate of 0.5sccm, with the calcultated edge-type dislocations density of 4.28×109cm-2. © (2014) Trans Tech Publications, Switzerland.

关键词： X ray diffraction

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An 88∼100 GHz High-Robustness Low-Noise Amplifier with 3.0∼3.5 dB Noise Figure Using 0.1μm GaN-on-SiC process 9

An 88∼100 GHz High-Robustness Low-Noise Amplifier with 3.0...

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9th IEEE MTT-S International Wireless Symposium, IWS 2022

作者： Chen, Yan Wang, Weibo Chen, Zhongfei Guo, Fangjin Wang, Guangnian Nanjing Electronic Devices Institute 210016 China Science and Technology on Monolithic Integrated and Modules Laboratory Nanjing210016 China

ISBN: (数字)9781665481977

ISBN: (纸本)9781665481977

This paper demonstrates the designed process and experimental performance of a W -band low-noise amplifier (LNA) MMIC based on a 0.1 mu m gate length GaN-on-SiC process. A considerable available gain can be realized at low voltage in W-band. At the same time, the desired LNA takes into account enhanced output power, large power capacitance, high withstand voltage, anti-static electricity and improved reliability of GaN technology, which is more convenient to integrate with other GaN power amplifiers and switches. The LNA is composed of a 3-stage common-source amplifier constructed to operate over an 88100 GHz frequency band. This measured amplifier achieves gain of 20-21dB, noise figure of 3.0-3.5dB, output power of 14.5dBm at 1dB compression point (P-1), power capacitance of 4 W, withstand voltage of 45 V and anti-static electricity of 2000 V. The MMIC is 3.1 mathrm{x}1.5 text{mm}{2} in size and consumes 0.4 W of dc power from a 5 V supply. © 2022 IEEE.

关键词： Silicon carbide

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Simulation, fabrication and characterization of 6500V 4H-SiC JBS diode

Simulation, fabrication and characterization of 6500V 4H-SiC...

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2013 International Conference on Mechatronics and Semiconductor Materials, ICMSCM 2013

作者： Huang, Run Hua Tao, Yong Hong Chen, Gang Bai, Song Li, Rui Li, Yun Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing Electronic Devices Institute Nanjing China

ISBN: (纸本)9783037859391

4H-SiC JBS diode with breakdown voltage higher than 6.5 kV has been successfully fabricated on 4H-SiC wafers with epitaxial layer. In this paper, the simulation, the fabrication, and the electrical characteristics of 4H-SiC JBS diode were reported. The drift layer thickness and doping are 55 μm and 9×1014 cm-3 respectively. 60 floating guard rings edge were fabricated as termination. The on-state voltage was 4 V at JF = 7A. © (2014) Trans Tech Publicutions, Switzerland.

关键词： Silicon carbide

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Photoluminescence investigation on highly p^+ -doped GaAs_(1-y)Sb_y(y<0.3)

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science China(Technological sciences) 2012年第11期55卷 3200-3203页

作者： GAO HanChao YIN ZhiJun CHENG Wei LI ZhongHui XIE ZiLi School of Electronic Science and Engineering Key Laboratory of Advanced Photonic and Electronic MaterialsNanjing UniversityNanjing 210093China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices InstituteNanjing 210016China

Photoluminescence properties of highly p＋-doped GaASl_ySby are investigated. Band gap narrowing （BGN） effect is considered for heavily doped GaAs1_ySby epilayers. Band-gap Eg（GaAsl_ySby）=l.25y2-1.95y＋1.519 is obtained through fitting band-gap energy obtained by PL spectra from 35 to 300 K. Fermi level （El） and full width at half maximum （FWHM） of photolumines- cence increase with antimony mole fraction. The increase of Fermi level is attributed to hole mass of GaAsl_ySby decrease which is resulted from antimony composition increase. The increase of Fermi level means that more electrons participate in in- direct transition to result in FWHM increases.

关键词： molecular beam epitaxy photoluminescence semiconducting III-V materials

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Effect of X-ray irradiation on threshold voltage of AlGaN/GaN HEMTs with p-GaN and MIS Gates

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Nanotechnology and Precision Engineering 2020年第4期3卷 241-243页

作者： Yongle Qi Denggui Wang Jianjun Zhou Kai Zhang Yuechan Kong Suzhen Wu Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices InstituteNanjing 210016China China Electronics Technology Group Corporation No.58 Research Institute Wuxi 204035China

Commercially available AlGaN/GaN high-electron-mobility transistors(HEMTs)are beginning to enter the public scene froma range of *** on previous studies,commercial GaN-based electronics are expected to be tolerant to different types of irradiation in *** test this assumption,we compared the characteristic electrical curves obtained at different X-ray irradiation doses for GaN HEMT devices manufactured by Infineon and *** p-GaN-based device was found to be more robust with a stable threshold voltage,whereas the threshold voltage of the device with ametal-insulator-semiconductor gatewas found to shift first in the negative and then the positive *** dynamic phenomenon is caused by the releasing and trapping effects of radiation-induced charges in the dielectric layer and at the interface of irradiated *** such,the p-GaNgate-based GaN HEMT provides a promising solution for use as an electric source in space.

关键词： p-GaN gate GaN HEMTs X-ray irradiation Threshold voltage

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