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Frequency stability of InP HBT over 0.2 to 220 GHz

Journal of Semiconductors 2015年第2期36卷 77-81页

作者：周之蒋任坤刘军程伟陆海燕孙玲玲 The Key Laboratory for RF Circuits and Systems of Ministry of Education Hangzhou Dianzi University Science and Technology on Monolithic Integrated Circuit and Modules Laboratory Nanjing Electronic Devices Institute

The frequency stabilities of lnP DHBTs in a broadband over 1 to 220 GHz are investigated. A hybrid π-topology small-signal model is used to accurately capture the parasitics of devices. The model parameters are extracted from measurements analytically. The investigation results show that the excellent agreement between the measured and simulated data is obtained in the frequency range 200 MHz to 220 GHz. The dominant parameters of the π-topology model, bias conditions and emitter area have significant effects on the stability factor K. The HBT model can be unconditionally stable by reasonable selection of the proper bias condition and the physical layout of the device.

关键词： double heterojunction bipolar transistor （DHBT） small-signal model stability factor

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Measurement and modeling techniques for InP-based HBT devices to 220GHz

Measurement and modeling techniques for InP-based HBT device...

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IEEE Conference on Electron Devices and Solid-State circuits

作者： Haiyan Lu Wei Cheng Zhijiang Zhou Oupeng Li Bin Niu Yuechan Kong Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China The Key Laboratory for RF Circuits and Systems of Ministry of Education Hangzhou Dianzi University Hangzhou China Fundamental Science on EHF Laboratory University of Electronic Science and Technology of China Chengdu China

ISBN: (纸本)9781509018314

In this paper a measurement method for InP-Based HBT devices to 220GHz is presented. S-parameters are de-embedded using TRL calibration structures (70-220GHz) fabricated on-wafer. The results shown in this paper are characterized at 75-110GHz and 140-220GHz. Good agreement between the low and high frequency measurement is achieved demonstrating the capability of TRL calibration in S-parameters extraction. Small signal equivalent circuit for InP DHBT up to 220GHz is also demonstrated. Excellent agreements between measured and simulated data are obtained in the frequency range of 0.2 to 220 GHz. A six-stage amplifier MMIC designed based on the HBT model is also presented. Measurement results show that the small signal gain of the amplifier is greater than 15 dB over 140-190 GHz.

关键词： Conferences Electron devices Solid state circuits

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A 5.4mW and 6.1% efficiency fixed-tuned 214GHz frequency doubler with Schottky barrier diodes

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High technology Letters 2015年第1期21卷 85-89页

作者：姚常飞 Zhou Ming Luo Yunsheng Kou Yanan Li Jiao Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Department of Microwave and Millimeter Wave Modules Nanjing Electronic Devices Institute

A Y-band frequency doubler is analyzed and designed with GaAs planar Schottky diode, which is flip-chip solded into a 50 μm thick quartz substrate. Diode embedding impedance is found by full- wave analysis with lumped port to model the nonlinear junction for impedance matching without the need of diode equivalent circuit model. All the matching circuit is designed ＂on-chip＂ and the mul- tiplier is self-biasing. To the doubler, a conversion efficiency of 6.1% and output power of 5.4mW are measured at 214GHz with input power of 88mW, and the typical measured efficiency is 4.5% in 200 - 225 GHz.

关键词： frequency doubler planar schottky diode quartz substrate efficiency

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On-chip integrated inductors with NiFe-SiOx magnetic thin films on GaN 4th

On-chip integrated inductors with NiFe-SiOx magnetic thin fi...

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4th International Conference on Electronics, Communications and Networks, CECNet2014

作者： Kong, Cen Zhou, Jianjun Li, Hui Lu, Haiyan Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China

ISBN: (纸本)9781138028302

Fabrication, characterization, and modeling of on-chip integrated inductors with magnetic thin film (NiFe-SiOX) on sapphire-based GaN substrate was reported. The fabrication processes were compatible with the conventional GaN-based MMIC process. On-wafer measured results showed that an additional resonant absorption happened in the inductors with magnetic films at lower frequencies. An improved equivalent circuit model that takes into account magnetic absorption was developed for characterizing the phenomenon and good fitting results were acquired up to 11.6 GHz. © 2015 Taylor & Francis Group, London.

关键词： III-V semiconductors

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AlGaN/GaN MIS-HEMT with ultrathin barrier using PECVD SiN as passivation and gate-insulating layer 4th

AlGaN/GaN MIS-HEMT with ultrathin barrier using PECVD SiN as...

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4th International Conference on Electronics, Communications and Networks, CECNet2014

作者： Wang, Zheli Zhou, Jianjun Kong, Cen Chen, Tangsheng Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing Jiangsu China

ISBN: (纸本)9781138028302

The Twodimensional Electron Gas density (2DEG) and electron mobility (μ) of Al0.3Ga0.7N/GaN heterostructures with a 5-nm-thick barrier increased after the deposition of 10-nm-thick SiN by Plasma Enhanced Chemical Vapor Deposition (PECVD). The SiN film worked as the passivation and gate-insulating layers. Al/Ni/Au ohmic was proposed for its good contact performance at a lower annealing temperature compared with Ti/Al/Ni/Au ohmic and the lowest specific contact resistance was 7.59 × 10-6 Ω∙cm2. The fabricated Metal Insulatingsemiconductor High Electron Mobility Transistors (MIS-HEMTs) with a gate length of 1 μm had a maximum drain current density of 624 mA/mm and a peak extrinsic transconductance of 110 mS/mm. © 2015 Taylor & Francis Group, London.

关键词： Plasma enhanced chemical vapor deposition

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Common Base Four-Finger InGaAs/InP Double Heterojunction Bipolar Transistor with Maximum Oscillation Frequency 535 GHz

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Chinese Physics Letters 2015年第7期32卷 175-178页

作者：牛斌王元程伟谢自力陆海燕常龙谢俊领 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing 210016 Key Laboratory of Advanced Photonic and Electronic Materials Department of Physics Nanjing University Nanjing 210093

A common base four-finger InOaAs/InP double heterojunction bipolar transistor with 535 OHz fmax by using the 0.5 μm emitter technology is fabricated. Multi-finger design is used to increase the input current. Common base configuration is compared with common emitter configuration, and shows a smaller K factor at high frequency span, indicating a larger breakpoint frequency of maximum stable gain/maximum available gain （MSG/MAG） and thus a higher gain near the cut-off frequency, which is useful in THz amplifier design.

关键词： InP InGaAs Common Base Four-Finger InGaAs/InP Double Heterojunction Bipolar Transistor with Maximum Oscillation Frequency 535 GHz

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Fabrication and application of 1.7KV SiC-Schottky diodes

Fabrication and application of 1.7KV SiC-Schottky diodes

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European Conference on Silicon Carbide and Related Materials, ECSCRM 2014

作者： Chen, G. Bai, S. Liu, A. Wang, L. Huang, R.H. Tao, Y.H. Li, Y. Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing Electronic Devices Institute Nanjing China

ISBN: (纸本)9783038354789

High voltage 4H-SiC Ni metal junction barrier schottky (JBS) diode with reverse breakdown voltage of 1700 V and forward current of 5 A has been fabricated. A low reverse leakage current below 3.8×10-5 A/cm2 at the bias voltage of -1700 V has been obtained. The forward on-state current was 5 A at VF = 1.7 V and 15.8 A at VF = 3 V. The chip is 2.52mm × 2.52 mm. The turn-on voltage is about 0.9 V. The on-state resistance is 8.7 mΩ·cm2. The optimal structure (doping and thickness of the N-type drift layer) has been determined by numerical simulations. The SiC JBS devices have been fabricated and the processes were in detail. The die was assembled in a TO-220 package. The thickness of the N- epilayer is 18.5 μm, and the doping concentration is 3.2×1015 cm−3. The number of floating guard p-rings was chosen to be 25, the distance between the rings was chosen to be 0.7 μm ~ 1.3 μm that has little effect on the reverse I-V characteristics of the JBS diodes, and the width of the p-rings is 2.5 μm. We use the PECVD SixNy/SiO2 as the passivation dielectric and a non photosensitive polyamide as the passivation in the end. The reverse current Ir was 1.26 A and the reverse recovery time Trr was 26 ns which corresponds to a maximum switching frequency of 38.46 MHz, when the diode was switched from 5 A forward current to a reverse voltage of 700V. The reverse recovery electric charge Qrr of 16 nC was obtained. © (2015) Trans Tech Publications, Switzerland.

关键词： Silicon carbide

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Development of 2500V SMB-seagull SiC JBS diodes

Development of 2500V SMB-seagull SiC JBS diodes

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International Conference on Mechatronics Engineering and Electrical Engineering, CMEEE 2014

作者： Chen, G. Zhang, Q.M. Bai, S. Liu, A. Wang, L. Huang, R.H. Li, D.H. Li, Y.N. Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing Electronic Devices Institute Nanjing China Jinan Semiconductor Institute Jinan China

ISBN: (纸本)9781138027190

High voltage 4H-SiC Ti schottky Junction Barrier Schottky (JBS) diode with breakdown voltage of 2500 V and forward current of 2 A has been fabricated. A low reverse leakage current below 1.13 × 10-4 A/cm2 at the bias voltage of -2.5 kV has been obtained. The forward on-state current was 2 A at VF = 1.8 V. The chip is 2.3 mm × 2.3 mm and the active-region is 1.5 mm × 1.5 mm. The turn-on voltage is about 0.9 V. The on-state resistance is 6.52 mΩ · cm2. The doping and thickness of the N-type drift layer and the device structure have been performed by numerical simulations. The SiC JBS devices have been fabricated and the processes were in detail. The die was packaged with SMB seagull package. The thickness of the N—epilayer is 24 µm, and the doping concentration is 4.0 × 1015 cm-3. A floating guard rings edge termination have been used to improve the effectiveness of the edge termination technique. By using Ti/Ni/Ag multilayer metal structure, the double side Ag process of 4H-SiC JBS diode is formed. We use the PECVD SizNy/SiO2 as the passivation dielectric and a non photosensitive polyamide with 390 °C cured temperature as the passivation in the end. © 2015 Taylor & Francis Group, London.

关键词： Silicon carbide

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Current Gain Increase by SiN_x Passivation in InGaAs/InP Double Heterostructure Bipolar Transistors

Current Gain Increase by SiN_x Passivation in InGaAs/InP Dou...

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IEEE International Conference on Communication Problem-Solving

作者： Junling Xie Wei Cheng Yuan Wang Bin Niu Long Chang Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

ISBN: (纸本)9781467365451

Passivation of InGaAs/InP double heterostructure bipolar transistors (DHBTs) with room temperature SiN_x deposition was investigated. Due to reduction of surface damages during SiN_x deposition, current gain improvement was observed at low bias voltage region. According to our analysis, a drastic decrease of surface recombination related current component at base-emitter junction occurred after passivation, which is crucial for improving the device reliability.

关键词： InP Heterostructure bipolar transistor Silicon nitride Passivation

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Current Gain Increase by SiNx Passivation in InGaAs/InP Double Heterostructure Bipolar Transistors

Current Gain Increase by SiNx Passivation in InGaAs/InP Doub...

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2015 International Conference on Communication Problem-Solving(ICCP)

作者： Junling Xie Wei Cheng Yuan Wang Bin Niu Long Chang Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

Passivation of InGaAs/InP double heterostructure bipolar transistors（DHBTs） with room temperature SiN deposition was investigated. Due to reduction of surface damages during SiN deposition, current gain improvement was observed at low bias voltage region. According to our analysis, a drastic decrease of surface recombination related current component at base-emitter junction occurred after passivation, which is crucial for improving the device reliability.

关键词： InP heterostructure bipolar transistor silicon nitride passivation

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