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2013 International Conference on Solar Energy Materials and Energy Engineering(SEMEE 2013)

作者： Gang Chen Song Bai Runhua Huang Yonghong Tao Ao Liu Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

SiC devices have excellent properties such as ultra low loss, high withstand voltage, large capacity, high frequency, and high temperature operation compared with Si devices. The SiC JFET is expected to be appropriate for the power device because a JFET has no oxide-semiconductor interface in the channel region and does not use the low mobility SiC MOSFET inversion layer as a channel. Forward I-V up to 4A for SiC VJFET, Gate voltage from 2V to 3.5V by step 0.5V. Reverse Ⅰ-Ⅴ characteristics up to 4500V(VG=-8V) for SiC VJFET, Gate voltage from -4V to -8V by step -2V. Turn-off characteristics are studied and fast turn-off time of 136 ns at room temperature under DC voltage of 600 V is successfully demonstrated.

关键词： SiC JFET Ohmic Trench

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Research and Implementation of 150W SiC Internally Match and Power Combiner at S Band

Research and Implementation of 150W SiC Internally Match and...

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2013 IEEE 5th International Symposium on Microwave,Antenna,Propagation and EMC Technologies for Wireless Communications

作者： Gang Chen Shichang Zhong Yuchao Li Song Bai Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

ISBN: (纸本)9781467360760

As one of the third generation semiconductor materials,SiC has many advantages,such as high-power,high gate-drain breakdown voltage,heat stability and anti-radiation *** it is of high value for study and application *** paper bases on 20mm SiC MESFET which is made by NEDI,through internally match circuit and power combiner technology,designs a power *** power module output power has 150W with the gain is 9dB at S-band 2.8GHz under a pulse condition of 100us pulse width and 10% duty cycle.

关键词： SiC MESFET Internally Match Circuit Power Combiner Power combiners pulse condition power module DUTY CYCLE Superhigh frequency

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Progress of High Voltage Trenched and Implanted 4H-SiC Vertical JFET

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Energy and Power Engineering 2013年第4期5卷 1284-1287页

作者： Gang Chen Song Bai Yonghong Tao Yun Li 1Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China 2Nanjing Electronic Devices Institute Nanjing China Nanjing Electronic Devices Institute Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China

A silicon carbide (SiC) vertical channel junction field effect transistor (VJFET) was fabricated based on in-house SiC epitaxial wafer with trenched and implanted method. Its forward drain current is in excess of 3.12 A (170 W/cm2) with a current gain of ID/IG = 19746 at gate bias VG = 3 V and drain bias VD = 5.5 V. The SiC VJFET device’s related specific on-resistance 54 mΩ·cm2. The BV gain is 250 V with Vg from -10 V to -4 V and is 350 V with Vg from -4 V to -2 V. Self-aligned floating guard rings provide edge termination that blocks 3180V at a gate bias of ?14 V and a drain-current density of 1.53 mA/cm2.

关键词： 4H-SiC VJFET Ohmic Trench Implant

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Application of 1200V-8A SiC JBS diodes in the motor system

Application of 1200V-8A SiC JBS diodes in the motor system

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2013 International Conference on Precision Mechanical Instruments and Measurement technology, ICPMIMT 2013

作者： Liu, Ao Chen, Gang Bai, Song Li, Rui Sun, Wei Feng Nanjing Electronic Device Institute Nanjing 210016 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing 210016 China National ASIC System Engineering Research Center Southeast University Nanjing 210096 China

1200V-8A 4H-SiC junction barrier schottky (JBS) diodes were designed and fabricated based on in-house SiC epitaxy and device technology. As a free-wheeling diode for the IGBT in inverter of motor system, the 1200V SiC JBS diode was compared to the Si ultra-fast diode from Fairchild Co. Ltd. The SiC diode achieved 88% recovery loss reduction and corresponding IGBT showed 35% lower turn-on loss. So, it will promote the application of motor system in high frequency and high efficiency. © 2013 Trans Tech Publications Ltd, Switzerland.

关键词： Silicon carbide

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Study of small signal of 4H-SIC static induction transistor

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Telkomnika - Indonesian Journal of Electrical Engineering 2013年第5期11卷 2838-2844页

作者： Chen, Gang Lu, Yang Li, Li Bai, Song Li, Yun Lu, Haiyan Science and Technology on Monolithic Integrated Circuits and Modules Laboratory China Nanjing Electronic Devices Institute Nanjing 210016 China

Silicon carbide (SiC) SITs were fabricated using home-grown epi structures. The gate is a recessed gate - bottom contact (RG - B). We designed that the mesa space 2.5 μm and the gate channel is 1.5 μm. One cell has 400 source fingers and each source finger width is 50 μm. 0.5 mm gate periphery SiC SIT yielded a maximum drain current density of 160 mA/mm at a drain voltage of 80 V and a gate voltage of 2.5 V. The device blocking voltage with a gate bias of -16 V was 400 V. Packaged 0.5-mm devices were evaluated using amplifier circuits designed for class AB operations. Small signal of SIT was studied. the maximum stable gain (MSG) were 11.2 dB at 500MHz and 7.85 dB at L band 1 GHz with Vds = 80V and Vg = 2V. ©2013 Universitas Ahmad Dahlan.

关键词： Silicon carbide

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A Substitution for the High-κ Dielectric in an AlGaN/GaN Metal-insulator-Semiconductor Heterostructure

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Chinese Physics Letters 2012年第5期29卷 225-228页

作者： KONG Yue-Chan XUE Fang-Shi ZHOU Jian-Jun LI Liang CHEN Chen JIANG Wen-Hai Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices InstituteNanjing 210016

Paraelectric state ferroelectric material is proposed as a novel substitution for the conventional high-k dielectric used in AlGaN/GaN metal-insulator-semiconductor (MIS) field-effect *** superior potential for improving device transconductance is due to its unique switchable polar *** self-consistent calculation involving the switchable polarization of the paraelectric,the 2DEG properties and C-V characteristics are investigated and compared for the novel AlGaN/GaN metal-paraelectric-semiconductor (MPS) structure and an equivalent conventional MIS *** is shown that owing to the paraelectric polarization,the gate control of the 2DEG density is remarkably enhanced in the MPS structure and the gate capacitance is significantly improved with a smaller threshold *** self-consistent polarization of the paraelectric in the MPS structure is non-linsarly dependent on the saturated polarization,which implies an optimum saturated polarization of 5-10 μC/cm^(2) for the paraelectric.

关键词： polarization insulator saturated

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High breakdown voltage InGaAs/InP double heterojunction bipolar transistors with f_(max)=256 GHz and BV_(CEO)= 8.3 V

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Journal of Semiconductors 2012年第1期33卷 56-58页

作者： Cheng Wei Zhao Yan Gao Hanchao Chen Chen Yang Naibin Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing 210016China

An InGaAs/InP DHBT with an InGaAsP composite collector is designed and fabricated using triple mesa structural and planarization technology. All processes are on 3-inch wafers. The DHBT with an emitter area of 1×15 μm2 exhibits a current cutoff frequency ft = 170 GHz and a maximum oscillation frequency fmax = 256 GHz. The breakdown voltage is 8.3 V, which is to our knowledge the highest BVcEo ever reported for InGaAs/InP DHBTs in China with comparable high frequency performances. The high speed InGaAs/InP DHBTs with high breakdown voltage are promising for voltage-controlled oscillator and mixer applications at W band or even higher frequencies.

关键词： InP double heterojunction bipolar transistor planarization

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Millimeter-wave fixed-tuned subharmonic mixers with planar Schottky diodes

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Journal of Semiconductors 2012年第11期33卷 95-99页

作者：姚常飞周明罗运生王毅刚许从海 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Department of Microwave and Millimeter Wave Modules Nanjing Electronic Devices Institute

Two different frequency bandwidth subharmonic mixers（SHM） using planar Schottky mixing diodes are discussed and ***-wave analysis is carried out to find the optimum diode embedding impedances with a lumped port for modeling the nonlinear *** SHM circuit is divided into several different parts and each part is optimized using the calculated diode *** divided parts are then combined and optimized *** exported S-parameter files of the global circuit are used for conversion loss（CL） *** the 150 GHz SHM,the lowest measured CL is 10.7 dB at 153 GHz,and typical CL is 12.5 dB in the frequency range of 135-165 *** lowest measured CL of the 180 GHz SHM is 5.8 dB at 240 GHz,and typical CL is 13.5 dB and 11.5 dB in the frequency range of 165-200 GHz and 210-240 GHz,respectively.

关键词： millimeter wave planar Schottky diodes subharmonic mixer conversion losses

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5A 1300V trenched and implanted 4H-SiC vertical JFET

5A 1300V trenched and implanted 4H-SiC vertical JFET

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4th International Conference on Mechanical and Electrical technology, ICMET 2012

作者： Chen, Gang Song, Xiaofeng Bai, Song Li, Li Li, Yun Chen, Zheng Wang, Wen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China

ISBN: (纸本)9783037855102

A silicon carbide (SiC) vertical channel junction field effect transistor (VJFET) was fabricated based on in-house SiC epitaxial wafer with lift-off trenched and implanted method. Its blocking voltage exceeds 1300V at gate bias VG = -6V and forward drain current is in excess of 5A at gate bias VG = 3V and drain bias VD = 3V. The SiC VJFET device's current density is 240A/cm2 at VG= 3V and VD = 3V, with related specific on-resistance 8.9mΩ·cm2. Further analysis reveals that the on-resistance depends greatly on ohmic contact resistance and the bonding spun gold. The specific on-resistance can be further reduced by improving the doping concentration of SiC channel epilayer and the device's ohmic contact. © (2012) Trans Tech Publications, Switzerland.

关键词： Silicon carbide

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Developing the Ka-band GaN power HEMT devices

Developing the Ka-band GaN power HEMT devices

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2012 5th Global Symposium on Millimeter-Waves, GSMM 2012

作者： Zhou, J.J. Dong, X. Kong, C. Kong, Y.C. Ren, C.J. Li, Z.H. Chen, T.S. Chen, C. Zhang, B. Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China

ISBN: (纸本)9781467313032

High quality Al0.3Ga0.7N/GaN/Al0.04Ga 0.96N double heterostructure was grown by metal-organic chemical vapor deposition (MOCVD). Two kinds of fabrication technology of Ka band GaN HEMT devices were developed. Using developed 0.25 μm self-aligned T-shaped gate technology, a 4.5 W/mm output power density and 28% PAE were obtained in continues wave (CW) mode at 34GHz. To increase the frequency performance of the GaN HEMT devices, a 0.15 μm Y-shaped gate technology was developed. By using this technology, the parasitic capacitance is effectively suppressed. The fT and fmax of the GaN HEMT device fabricated with the 0.15 μm Y-shaped gate technologies were greatly improved and reached 80GHz and 110GHz, respectively. A 3.1 W/mm output power density and 26.3% PAE were also obtained in CW mode at 34GHz. © 2012 IEEE.

关键词： III-V semiconductors

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