In this paper, a passive double-balanced mixer operating at 14-22GHz is designed based on the $0.15_{5}\mathrm{m}$ pHEMT GaAs process provided by WIN Semiconductor. The RF/LO frequency of the mixer is 14GHz-22GHz, a...
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ISBN:
(纸本)9781665482271
In this paper, a passive double-balanced mixer operating at 14-22GHz is designed based on the $0.15_{5}\mathrm{m}$ pHEMT GaAs process provided by WIN Semiconductor. The RF/LO frequency of the mixer is 14GHz-22GHz, and the IF frequency range is DC-4GHz. The ring-shaped mixing ring is composed of four MOS transistors connected with drain and source, and the RF and LO ports are spiral Marchand balun. The simulation results show that when the LO power is 13dBm, the frequency conversion loss is about 10dB, the isolation of LO/RF port and LO/IF port are both greater than 30dB, and that of RF/IF port is greater than 20dB. Chip size is $1.5 \text{mm}\times 0.9\text{mm}$ .
In this paper, we investigate the influence of deep level defects on the electrical properties of Ni/4H-SiC Schottky diodes by analyzing device current-voltage(I-V) characteristics and deep-level transient spectra(DLT...
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In this paper, we investigate the influence of deep level defects on the electrical properties of Ni/4H-SiC Schottky diodes by analyzing device current-voltage(I-V) characteristics and deep-level transient spectra(DLTS). Two Schottky barrier heights(SBHs) with different temperature dependences are found in Ni/4 H-SiC Schottky diode above room temperature. DLTS measurements further reveal that two kinds of defects Z_(1/2) and Ti(c)~a are located near the interface between Ni and SiC with the energy levels of E_C-0.67 eV and E_C-0.16 eV respectively. The latter one as the ionized titanium acceptor residing at cubic Si lattice site is thought to be responsible for the low SBH in the localized region of the diode, and therefore inducing the high reverse leakage current of the diode. The experimental results indicate that the Ti(c)~a defect has a strong influence on the electrical and thermal properties of the 4 H-SiC Schottky diode.
The thermal management and channel temperature evaluation of GaN power amplifiers are indispensable issues in engineering field. The transient thermal characteristics of pulse operated AlGaN/GaN high electron mobility...
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The resolution enhancement lithography assisted by chemical shrink (RELACS) is presented to increase the resolution of the i-line lithography. We have succeeded in developing an advanced i-line lithography process bas...
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Based on SMIC 180nm CMOS process and 1.8/3.3V power supply voltage, a high-speed pipeline ADC is designed in this paper. After a comprehensive consideration of conversion rate and accuracy, the pipelined architecture ...
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ISBN:
(纸本)9781665482271
Based on SMIC 180nm CMOS process and 1.8/3.3V power supply voltage, a high-speed pipeline ADC is designed in this paper. After a comprehensive consideration of conversion rate and accuracy, the pipelined architecture is finally determined to be $\boldsymbol{3.5}\mathbf{b}\boldsymbol{\times 3+5}\mathbf{b.}$ The redundant calibration technology is adopted between each stage to reduce the influence of comparator offset on ADC accuracy. To reduce power consumption and area, SHA-less sampling is adopted. The traditional bootstrap switch is improved to dynamically change the substrate potential so as to reduce the influence of leakage in SHA-less sampling circuit. The post-simulation results shows that the high-speed pipeline ADC designed in this paper can reach 9.97-bit ENOB and 67.76 dB SFDR under the sampling frequency of 100MS/s and input signal frequency of Nyquist, the overall power consumption is about 390mW, and the overall area of the layout is 4.56mm 2 .
Single photons and photon pairs are typically generated by spontaneous parametric down conversion or quantum dots;however,spontaneous four-wave mixing(SFWM)in silicon microring resonators[1]is also an appealing source...
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Single photons and photon pairs are typically generated by spontaneous parametric down conversion or quantum dots;however,spontaneous four-wave mixing(SFWM)in silicon microring resonators[1]is also an appealing source of entangled photons,offering a strong cavity-enhanced nonlinear interactions while maintaining features,such as compact,simple to fabricate,and allowing for thermal ***,silicon ring-resonators usually suffer from a trade-off between providing a high pair generation rate(PGR)and high extraction *** achieve high PGR,devices are generally operated with the signal and idler photons in the undercoupling regime and pump photons at the critical coupling point,while high extraction rates require the converted photons to be ***,the optimal conditions for achieving maximal output photon pair flux are critical coupling for the pump photons and overcoupling for the converted photons[2,3].
W-band power amplifiers (PAs) play an important role in Gb/s-data-rate wireless communication, imaging, and radar applications. Traditionally, multiple transistors are connected in parallel to maximize the output powe...
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ISBN:
(数字)9781728132051
ISBN:
(纸本)9781728132068
W-band power amplifiers (PAs) play an important role in Gb/s-data-rate wireless communication, imaging, and radar applications. Traditionally, multiple transistors are connected in parallel to maximize the output power. Though the active area, including gate width and number of fingers, can be scaled up to generate large transistors, the metallic inter-connection is not suitable for scaling due to random shape and magnetic coupling. Thus, an accurate device model should be investigated by separating the scalable and the non-scalable parts. In additional, the maximum output power of the PA is known to be limited by intrinsic characteristics of power transistor, such as maximum current density, breakdown voltage, and parasitic element. Compared to silicon-based technology, GaN PAs are able to operate at higher voltages and frequencies, thereby reducing loss and improving power density (W/mm 2 ) [1].
The resolution enhancement lithography assisted by chemical shrink(RELACS)is presented to increase the resolution of the i-line *** have succeeded in developing an advanced i-line lithography process based on i-line s...
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ISBN:
(数字)9780738111889
ISBN:
(纸本)9781665419642
The resolution enhancement lithography assisted by chemical shrink(RELACS)is presented to increase the resolution of the i-line *** have succeeded in developing an advanced i-line lithography process based on i-line stepper lithography and second-RELACS ***,the limit resolution of i-line lithography can be increased from 0.35 μm to 0.1 μm at the first time,and the wafer yield of GaN high electron mobility transistor(HEMT)with 3.1 mm gate width which has an Lg = 0.147 μm is 87.4%.Besides,the second-RELACS process is applied to X-band GaN monolithic microwave integrated circuit power amplifier(MMIC PA),the resist width and gate length are about 0.15 μm and 0.2 μ*** is confirmed that the wafer yield of T gate with 6.8 mm gate width can be as high as 70.2%.Comparing with the results of deep ultra-violet(DUV)lithography,the electrical and radio frequency(RF)characteristics of the GaN HEMTs fabricated with the second-RELACS process are stable.
This paper presents a 0.5∽50GHz differential distributed amplifier implemented in a 0.7μm InP HBT technology. The amplifier uses a common-source common-gate structure with a source follower as the gain unit, and the...
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ISBN:
(数字)9798350389968
ISBN:
(纸本)9798350389975
This paper presents a 0.5∽50GHz differential distributed amplifier implemented in a 0.7μm InP HBT technology. The amplifier uses a common-source common-gate structure with a source follower as the gain unit, and the transmission line selects the grounded coplanar waveguide. At the same time, a transmission is introduced to peak the high-frequency gain and expand the bandwidth. The simulation results show that the differential-mode gain of the amplifier is typically 12 dB in the frequency range of 0.5 to 50 GHz, with a flatness of ±1.5 dB. The input and output return losses are both less than -10 dB, and the output 1dB compression point > 10dBm.
The morphology of the in-situ etching process on Si-face and C-face 4H-SiC, by annealing in a hydrogen environment, is studied by atomic force microscopy (AFM). The uniform step-terrace morphology of both the Si-face ...
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