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Common base four-finger InGaAs/InP DHBT with 535 GHz fmax

Common base four-finger InGaAs/InP DHBT with 535 GHz fmax

IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IEEE MTT-S IMWS-AMP 2015

作者： Bin, Niu Wei, Cheng Yuan, Wang Zi-Li, Xie Jun-Ling, Xie Hai-Yan, Lu Yan, Sun Tang-Sheng, Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China Key Laboratory of Advanced Photonic and Electronic Materials Department of Physics Nanjing University Nanjing210093 China

ISBN: (纸本)9781479964505

A common base four-finger InGaAs/InP DHBT with 535 GHz fmax using 0.5μm emitter technology is fabricated. Multi-finger design was used to increase input current. Common base configuration was compared with common emitter configuration, and demonstrated a smaller K factor at high frequency span, indicating a larger MSG/MAG breakpoint frequency and thus a higher gain when frequency reaches MAG region of common emitter devices. © 2015 IEEE.

关键词： Indium phosphide

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Transient simulation for the thermal design optimization of pulse operated AlGaN/GaN HEMTs

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Micromachines 2020年第1期11卷 76-76页

作者： Guo, Huaixin Chen, Tangsheng Shi, Shang Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China

The thermal management and channel temperature evaluation of GaN power amplifiers are indispensable issues in engineering field. The transient thermal characteristics of pulse operated AlGaN/GaN high electron mobility transistors (HEMT) used in high power amplifiers are systematically investigated by using three-dimensional simulation with the finite element method. To improve the calculation accuracy, the nonlinear thermal conductivities and near-junction region of GaN chip are considered and treated appropriately in our numerical analysis. The periodic transient pulses temperature and temperature distribution are analyzed to estimate thermal response when GaN amplifiers are operating in pulsed mode with kilowatt-level power, and the relationships between channel temperatures and pulse width, gate structures, and power density of GaN device are analyzed. Results indicate that the maximal channel temperature and thermal impedance of device are considerably influenced by pulse width and power density effects, but the changes of gate fingers and gate width have no effect on channel temperature when the total gate width and active area are kept constant. Finally, the transient thermal response of GaN amplifier is measured using IR thermal photogrammetry, and the correctness and validation of the simulation model is verified. The study of transient simulation is demonstrated necessary for optimal designs of pulse-operated AlGaN/GaN HEMTs. © 2020 by the authors.

关键词： Gallium nitride

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Study on 2000V SiC JBS Diodes

Study on 2000V SiC JBS Diodes

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2013 3rd International Conference on Electric and Electronics(EEIC 2013)

作者： Gang Chen Lin Wang Runhua Huang Song Bai Yun Li Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

High voltage 4H-SiC Ti schottky junction barrier schottky（JBS） diode with breakdown voltage of 2000 V and forward current of 2A has been fabricated. A low reverse leakage current below 1.9×10A/cm at the bias voltage of-2kV has been obtained. The forward on-state current was 2A at V = 1.9V and 5A at VF = 3V. The chip is 2.3mm×2.3mm. The turn-on voltage is about 1.0V. The on-state resistance is 19.3m?·cm. The doping and thickness of the N-type drift layer and the device structure have been performed by numerical simulations. The SiC JBS devices have been fabricated and the processes were in detail. The die was packaged with SMB mode. The thickness of the Nepilayer is 17μm, and the doping concentration is 4.6×10cm. A floating guard rings edge termination have been used to improve the effectiveness of the edge termination technique. By using Ti/Ni/Ag multilayer metal structure, the double side Ag process of 4H-SiC JBS diode is formed. We use the PECVD SiN/SiO as the passivation dielectric and a non photosensitive polyamide as the passivation in the end.

关键词： 4H-SiC JBS Floating guard rings

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Novel extraction method for small-signal equivalent circuit model of HEMTs based on vector fitting

Novel extraction method for small-signal equivalent circuit ...

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2014 IEEE International Conference on Communication Problem-Solving, ICCP 2014

作者： Wu, Yongzhi Ren, Kun Liu, Jun Wei, Cheng Haiyan, Lu Key Laboratory for RF Circuits and Systems of Ministry of Education Hangzhou Dianzi University Hangzhou310037 China Science and Technology on Monolithic Integrated Circuit and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China

ISBN: (纸本)9781479942466

A novel model method for III-V HEMTs small-signal model parameter extraction is presented in this work. All the model elements are directly derived from hot S-parameters, rather than cold S-parameters, by using vector fitting (VF) method The model renders excellent agreement with the measured and simulated data over 1 to 100 GHz, for a 2×150μm GaAs HEMT device manufactured in CETC-55 150nm GaAs pHEMT technology. © 2014 IEEE.

关键词： III-V semiconductors

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Growth of compressively-strained GaN films on Si(111) substrates with thick AlGaN transition and AlGaN superlattice buffer layers

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Physica Status Solidi (C) Current Topics in Solid State Physics 2016年第5-6期13卷 181-185页

作者： Pan, Lei Dong, Xun Ni, Jinyu Li, Zhonghui Yang, Qiankun Peng, Daqing Li, Chuanhao Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China

In this paper, crack-free GaN films with step-graded AlGaN transition layer and AlGaN superlattice layer as buffer layers were grown on Si(111) substrate by metal-organic chemical vapor deposition(MOCVD). The combination of both buffers effectively improves the properties of GaN layer. With the optimization of the buffer structures, high quality compressively-strained GaN layers with thickness up to 3.6 μm have been obtained on Si(111) substrates. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

关键词： Substrates

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Spin Transport under In-plane Electric Fields with Different Orientations in Undoped InGaAs/AlGaAs Multiple Quantum Wells

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Chinese Physics Letters 2019年第7期36卷 82-85页

作者： Xiao-di Xue Yu Liu Lai-pan Zhu Wei Huang Yang Zhang Xiao-lin Zeng Jing Wu Bo Xu Zhan-guo Wang Yong-hai Chen Wei-feng Zhang Henan Key Laboratory of Photovoltaic Materials Henan University Kaifeng 475004 Key Laboratory of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices Beijing 100083 Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 Beijing Institute of Nanoenergy and Nanosystems Chinese Academy of Sciences Beijing 100083 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing 210016

The spin-polarized photocurrent is used to study the in-plane electric field dependent spin transport in undoped InGaAs/AlGaAs multiple quantum wells. In the temperature range of 77–297 K, the spin-polarized photocurrent shows an anisotropic spin transport under different oriented in-plane electric fields. We ascribe this characteristic to two dominant mechanisms: the hot phonon effect and the Rashba spin-orbit effect which is influenced by the in-plane electric fields with different orientations. The formulas are proposed to fit our experiments, suggesting a guide of potential applications and devices.

关键词： The spin-polarized photocurrent dependent spin transport applications and devices

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Efficient immersion cooling for electronic devices based on multi-physics field coupling

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International Journal of Thermal sciences 2025年 215卷

作者： Fan, Chengcheng Yang, Ruixue Guo, Huaixin Jiang, Haitao Zhang, Chengbin Chen, Yongping Key Laboratory of Efficient Low-carbon Energy Conversion and Utilization of Jiangsu Provincial Higher Education Institutions Suzhou University of Science and Technology Jiangsu Suzhou215009 China School of Energy and Environment Southeast University Jiangsu Nanjing210096 China Advanced Ocean Institute of Southeast University Jiangsu Nantong226019 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Jiangsu Nanjing210096 China China Electronics Technology Group Corporation 38th Research Institute Anhui Hefei230031 China

Efficient cooling of high heat-flux electronic devices involving multi-physics field coupling has become a key challenge. To address these challenges, this paper establishes a multi-physics field coupling heat-transfer model for electronic devices using immersion cooling and serpentine channel cooling. The multi-physics field coupling analysis of electronic devices with different cooling methods is carried out, focusing on the influences of input voltage, inlet coolant mass flow rate, and coolant type. The results indicate that multi-physics field coupling effects in electronic devices lead to a temperature increase of 1.8 %∼17.8 %, a rise in current density of 235 %∼245 %, and a maximum displacement increase of 0.12 μm. Moreover, the temperature, output current, and strain energy density of electronic devices increase with higher input voltage but decrease with higher inlet mass flow rate. Coolant type significantly influences the thermal and mechanical performance of electronic devices but has relatively minor effect on their electrical characteristics. Compared to serpentine channel cooling, immersion cooling reduces discrepancies in temperature, current density, and strain energy density by 23.4 %, 10.8 %, and 70 %, respectively, with and without multi-physics field coupling, effectively mitigating the multi-physics field coupling effect. Under multi-physics field coupling conditions, the thermal management advantages of immersion cooling become increasingly apparent compared to serpentine channel cooling with increasing electric potential, while differences in electrical performance remain minimal. © 2025

关键词： Electronic cooling

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100GHz Static Frequency Divider Based On 0.5μm InP/InGaAs DHBT

100GHz Static Frequency Divider Based On 0.5μm InP/InGaAs D...

引用

2015 International Conference on Communication Problem-Solving(ICCP)

作者： Bin Niu Wei Cheng You-Tao Zhang Yuan Wang Hai-Yan Lu Long Chang Jun-Ling Xie Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

A static divide-by-2 frequency divider based on InP/InGaAs DHBT technology is *** chip thin film resistor and capacitor were *** levels of interconnect were *** collector design and 0.5μm emitter width enable the sta... 详细信息

关键词： m InP/InGaAs DHBT InGaAs InP Static Frequency Divider Based On 0.5

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107W CW SiC MESFET with 48.1% PAE

107W CW SiC MESFET with 48.1% PAE

引用

2013 IEEE 5th International Symposium on Microwave,Antenna,Propagation and EMC Technologies for Wireless Communications

作者： Yonghong Tao Song Bai Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

ISBN: (纸本)9781467360760

In the paper,30mm high-power SiC MESFETs have been *** load-pull testing at 1.5 GHz and 48V drain to source voltage,packaged 2 ×30mm SiC MESFET transistors were demonstrated with output power higher than 107W with 48.1% PAE,and the gain was 10.3 dB under continuous wave RF *** gate periphery divices of 1mm SiC MESFET exhibited 35 dBm output power with more than 55% PAE,and the gain was 12.3 dB under continuous wave RF operation at 1.5 GHz and 48V drain to source voltage.

关键词： SiC MESFET CW load-pull MESFETs load-pull Output power Gain

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Design of a novel S-band broadband CW self-biased GaN power amplifier for communication 2021

Design of a novel S-band broadband CW self-biased GaN power ...

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9th International Conference on Communications and Broadband Networking, ICCBN 2021

作者： Zhang, Luchuan Zhong, Shichang Chen, Yue Tang, Shijun Sun, Chunmei Southeast University Department of Electronic Science and Engineering Nanjing Electronic Devices Institute National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute China

ISBN: (纸本)9781450389174

In this paper, a S-band broadband internally matched power amplifier is designed based on GaN HEMT using internal-matching method in input and output respectively. A single-power-supplied self-biased structure is adopted to provide instantaneous protection. Test results show that the output power is more than 20W with the power gain of over 15dB and power added efficiency over 58% at the condition of Vds=32V, continuous wave from 2.2GHz to 2.6GHz. © 2021 ACM.

关键词： Power amplifiers

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