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Enhancement-mode Al2O3/InAlGaN/GaN MOS-HEMTs with a record drain current density of 1.7 A/mm and a threshold voltage of +1.5 V

Enhancement-mode Al2O3/InAlGaN/GaN MOS-HEMTs with a record d...

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China International Forum o Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

作者： Kai Zhang Jianjun Zhou Cen Kong Yuechan Kong Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing

ISBN: (纸本)9781509046140

The paper reports high performance enhancement-mode MOS-HEMT based on quaternary InAlGaN barrier. A self-aligned gate technology is used for gate recessing, dielectric deposition and gate electrode formation processes, where improved digital recessing process as well as O2 plasma-assisted Al 2 O 3 gate dielectric is developed. Fabricated E-mode MOS-HEMT delivers a record output current density of 1.7A/mm with a threshold voltage (V TH ) of 1.5 V, and a small on-resistance (R on ) of 2.0 Q-mm. Excellent V TH hysteresis and greatly improved gate leakage characteristics are also demonstrated.

关键词： Logic gates HEMTs MODFETs Dielectrics Aluminum oxide Threshold voltage Leakage currents

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Thin-barrier enhancement-mode AlGaN/GaN MIS-HEMT using ALD Al_2O_3 as gate insulator

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Journal of Semiconductors 2015年第9期36卷 62-65页

作者：王哲力周建军孔月婵孔岑董逊杨洋陈堂胜 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

A high-performance enhancement-mode （E-mode） gallium nitride （GaN）-based metal-insulator- semiconductor high electron mobility transistor （MIS-HEMT） that employs a 5-nm-thick aluminum gallium nitride （Al0.3Ga0.7N） as a barrier layer and relies on silicon nitride （SIN） passivation to control the 2DEG density is presented. Unlike the SiN passivation, aluminum oxide （AL2O3） by atomic layer deposition （ALD） on A1GaN surface would not increase the 2DEG density in the heterointerface. ALD AL2O3 was used as gate insulator after the depletion by etching of the SiN in the gate region. The E-mode MIS-HEMT with gate length （LG） of 1 μm showed a maximum drain current density （IDs） of 657 mA/mm, a maximum extrinsic transconductance （gin） of 187 mS/ram and a threshold voltage （Vth） of 1 V. Comparing with the corresponding E-mode HEMT, the device performances had been greatly improved due to the insertion of AL2O3 gate insulator. This provided an excellent way to realize E-mode A1GaN/GaN MIS-HEMTs with both high Vth and IDS.

关键词： enhancement-mode （E-mode） AIGaN/GaN metal-insulator-semiconductor high electron mobilitytransistor （MIS-HEMT） atomic layer deposition （ALD） AL2O3

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High power performance AlGaN/GaN HEMT with 0.1 μm Y-shaped gate encapsulated with low-κ BCB

High power performance AlGaN/GaN HEMT with 0.1 μm Y-shaped ...

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IEEE Conference on Electron Devices and Solid-State Circuits

作者： Xinxin Yu Jianjun Zhou Yuechan Kong Daqing Peng Weibo Wang Fangjin Guo Haiyan Lu Wen Wang Cen Kong Zhonghui Li Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China

ISBN: (纸本)9781509018314

High power performance AlGaN/GaN HEMT devices with 0.1 μm Y-shaped gates encapsulated with low-κ BCB are reported. The maximum drain current and transconductance of the device are 1.15 A/mm and 350 mS/mm, respectively. The two-terminal breakdown voltage exceeds 30 V, which ensures a high operating voltage. Using the novel 0.1 μm low parasitic Y-shaped gate associated with AlGaN back barrier, a f T of 90 GHz and a f max of 170 GHz were obtained for the device. Through measurements of the W-band GaN MMIC PA, ability of 1.55 W/mm output power density was achieved for the device at frequency of 92 GHz. These outstanding performance indicates the devices are suitable for W-band MMIC applications.

关键词： Decision support systems Logic gates Conferences Electron devices Solid state circuits Gain

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Millimeter wave broadband high sensitivity detectors with zero-bias Schottky diodes

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Journal of Semiconductors 2015年第6期36卷 105-109页

作者：姚常飞周明罗运生许从海 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Department of Microwave and Millimeter Wave Modules Nanjing Electronic Devices Institute

Two broadband detectors at W-band and D-band are analyzed and designed with low barrier Schottky diodes. The input circuit of the detectors is realized by low and high impedance microstrip lines, and their output circuit is composed of a radio frequency （RF） bandstop filter and a tuning line for optimum reflection phase of the RF signal. S-parameters of the complete circuit are exported to a circuit simulator for voltage sensitivity analysis. For the W band detectors, the highest measured voltage sensitivity is 11800 mV/mW at 100 GHz, and the sensitivity is higher than 2000 mV/mW in 80-104 GHz. Measured tangential sensitivity （TSS） is higher than -38 dBm, and its linearity is superior than 0.99992 at 95 GHz. For the D band detector, the highest measured voltage sensitivity is 1600 mV/mW, and the typical sensitivity is 600 mV/mW in 110-170 GHz. TSS is higher than -29 dBm, and its linearity is superior than 0.99961 at 150 GHz.

关键词： millimeter wave zero bias Schottky diode detector voltage sensitivity

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High performance ultra-thin quaternary InAlGaN barrier HEMTs with fT > 260 GHz

High performance ultra-thin quaternary InAlGaN barrier HEMTs...

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China International Forum o Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

作者： Guangrun Zhu Kai Zhang Xinxin Yu Yuechan Kong Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing P. R. China

ISBN: (纸本)9781509046140

We fabricated the depletion-mode high-electron mobility transistors (HEMTs) based on a quaternary barrier InAlGaN/AlN/GaN heterostructure on SiC substrate. A 60-nm rectangular-shape gate was defined through e-beam lithography and subsequent Ni/Au (20 nm/80 nm) metal evaporation. Our device shows a high DC drain current density of 2.5 A/mm, a low on-resistance Ron of 0.94 Ω.mm in the linear region, a high peak extrinsic transconductance of 0.97 S/mm, and a high current-gain cutoff frequency of 261 GHz. Besides, a high f T . L g product of 15.7 GHz.μm was achieved. The drain-induced barrier lowering (DIBL) is calculated to be 200 mV/V at I D =1 mA/mm, implying moderate short-channel effect in our device. To our knowledge, this is among the best f T performance for GaN-based HEMTs with a gate length of around 60 nm.

关键词： HEMTs MODFETs Logic gates Gallium nitride Performance evaluation Aluminum gallium nitride Wide band gap semiconductors

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Design and fabrication of a 3.3 kV 4H-SiC MOSFET

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Journal of Semiconductors 2015年第9期36卷 54-57页

作者：黄润华陶永洪柏松陈刚汪玲刘奥卫能李赟赵志飞 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing 210016 China Nanjing Electronic Devices Institute Nanjing 210016 China

A 4H-SiC MOSFET with breakdown voltage higher than 3300 V has been successfully designed and fabricated. Numerical simulations have been performed to optimize the parameters of the drift layer and DMOSFET cell structure of active area. The n-type epilayer is 33μm thick with a doping of 2.5 × 10^15 cm-3. The devices were fabricated with a floating guard ring edge termination. The drain current 1d= 5 A at Vg = 20 V, corresponding to vd = 2.5 v.

关键词： 4H-SiC MOSFET interface state

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A 5.4mW and 6.1% efficiency fixed-tuned 214GHz frequency doubler with Schottky barrier diodes

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High technology Letters 2015年第1期21卷 85-89页

作者：姚常飞 Zhou Ming Luo Yunsheng Kou Yanan Li Jiao Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Department of Microwave and Millimeter Wave Modules Nanjing Electronic Devices Institute

A Y-band frequency doubler is analyzed and designed with GaAs planar Schottky diode, which is flip-chip solded into a 50 μm thick quartz substrate. Diode embedding impedance is found by full- wave analysis with lumped port to model the nonlinear junction for impedance matching without the need of diode equivalent circuit model. All the matching circuit is designed ＂on-chip＂ and the mul- tiplier is self-biasing. To the doubler, a conversion efficiency of 6.1% and output power of 5.4mW are measured at 214GHz with input power of 88mW, and the typical measured efficiency is 4.5% in 200 - 225 GHz.

关键词： frequency doubler planar schottky diode quartz substrate efficiency

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Frequency stability of InP HBT over 0.2 to 220 GHz

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Journal of Semiconductors 2015年第2期36卷 77-81页

作者：周之蒋任坤刘军程伟陆海燕孙玲玲 The Key Laboratory for RF Circuits and Systems of Ministry of Education Hangzhou Dianzi University Science and Technology on Monolithic Integrated Circuit and Modules Laboratory Nanjing Electronic Devices Institute

The frequency stabilities of lnP DHBTs in a broadband over 1 to 220 GHz are investigated. A hybrid π-topology small-signal model is used to accurately capture the parasitics of devices. The model parameters are extracted from measurements analytically. The investigation results show that the excellent agreement between the measured and simulated data is obtained in the frequency range 200 MHz to 220 GHz. The dominant parameters of the π-topology model, bias conditions and emitter area have significant effects on the stability factor K. The HBT model can be unconditionally stable by reasonable selection of the proper bias condition and the physical layout of the device.

关键词： double heterojunction bipolar transistor （DHBT） small-signal model stability factor

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A high linearity X-band SOI CMOS digitally-controlled phase shifter

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Journal of Semiconductors 2015年第6期36卷 115-122页

作者：陈亮陈新宇张有涛李智群杨磊 Nanjing Electronic Devices Institute Guobo Electronics Co.Ltd RF & OE IC Institute Southeast University Science and Technology on Monolithic Integrated Circuits and Modules Laboratory

This paper proposed an X-band 6-bit passive phase shifter （PS） designed in 0.18 μm silicon-on-insulator （SOI） CMOS technology, which solves the key problem of high integration degree, low power, and a small size T/R module. The switched-topology is employed to achieve broadband and fiat phase shift. The ESD circuit and driver are also integrated in the PS. It covers the frequency band from 7.5 to 10.5 GHz with an EMS phase error less than 7.5%. The input and output VSWRs are less than 2 and the insertion loss （IL） is between 8-14 dB across the 7.5 to 10.5 GHz, with a maximum IL difference of 4 dB. The input 1 dB compression point （IP1dB） is 20 dBm.

关键词： digitally-controlled phase shifter CMOS technology T/R module

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On-chip integrated inductors with NiFe-SiOx magnetic thin films on GaN 4th

On-chip integrated inductors with NiFe-SiOx magnetic thin fi...

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4th International Conference on Electronics, Communications and Networks, CECNet2014

作者： Kong, Cen Zhou, Jianjun Li, Hui Lu, Haiyan Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China

ISBN: (纸本)9781138028302

Fabrication, characterization, and modeling of on-chip integrated inductors with magnetic thin film (NiFe-SiOX) on sapphire-based GaN substrate was reported. The fabrication processes were compatible with the conventional GaN-based MMIC process. On-wafer measured results showed that an additional resonant absorption happened in the inductors with magnetic films at lower frequencies. An improved equivalent circuit model that takes into account magnetic absorption was developed for characterizing the phenomenon and good fitting results were acquired up to 11.6 GHz. © 2015 Taylor & Francis Group, London.

关键词： III-V semiconductors

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