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IEEE Conference on Electron Devices and Solid-State Circuits

作者： Li Shu Wu Yan Zhao Gui Xiong Shi Wei Cheng Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China

The present work describes the study and improvement of heterogeneous integration based on epitaxial layer transfer technique, which is used to separate III/V device from their substrate and transfer to the other substrate. Our work aims in the development of a new process for integration of GaAs device with Silicon substrate. It is based on low temperature bonding of the epitaxial layer transfer technology with bisbenzocyclobutene (BCB). Using this method, we demonstrate that GaAs pseudomorphic high electron mobility transistor (pHEMT) device on a 3 inch-diameter GaAs wafer is transferred to a Silicon substrate, and evaluate the different thickness of BCB that affect the performance of GaAs pHEMT device.

关键词： Conferences Electron devices Solid state circuits

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AlGaN/GaN HEMTs on 4-Inch Silicon Substrates in the Presence of 2.7-μm -Thick Epilayers with the Maximum Off-State Breakdown Voltage of 500 V

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Chinese Physics Letters 2014年第3期31卷 129-132页

作者： YU Xin-Xin NI Jin-Yu LI Zhong-Hui KONG Cen ZHOU Jian-Jun DONG Xun PAN Lei KONG Yue-Chan CHEN Tang-Sheng Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing 210016

We report on the high breakdown performance of AlGaN/GaN high electron mobility transistors （HEMTs） grown on 4-inch silicon substrates. The HEMT structure including three Al-content step-graded AlGaN transition layers has a total thickness of 2.7 μm. The HEMT with a gate width WG of 300 μm acquires a maximum off-state breakdown voltage （BV） of 550 V and a maximum drain current of 527 mA/mm at a gate voltage of 2 V. It is found that BV is improved with the increase of gate-drain distance LGD until it exceeds 8 μm and then BV is tended to saturation. While the maximum drain current drops continuously with the increase of LGD. The HEMT with a WG of 3 mm and a LGD of 8 μm obtains an off-state BV of 500 V. Its maximum leakage current is just 13 μA when the drain voltage is below 400 V. The device exhibits a maximum output current of 1 A with a maximum transconductance of 242 mS.

关键词： HIGH electron mobility transistors RESEARCH SILICON -- Research GALLIUM nitride SEMICONDUCTOR doping PHYSICS research

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Development of 10 kV 4H-SiC JBS diode with FGR termination

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Journal of Semiconductors 2014年第7期35卷 56-59页

作者：黄润华陶永洪曹鹏飞汪玲陈刚柏松栗瑞李赟赵志飞 Nanjing Electronic Devices Institute Science and Technology on Monolithic Integrated Circuits and Modules Laboratory

The design, fabrication, and electrical characteristics of the 4H-SiC JBS diode with a breakdown voltage higher than 10 kV are presented. 60 floating guard rings have been used in the fabrication. Numerical simulations have been performed to select the doping level and thickness of the drift layer and the effectiveness of the edge termination technique. The n-type epilayer is 100 μm in thickness with a doping of 6 × 10^14 cm^-3. The on-state voltage was 2.7 V at JF = 13 A/cm^2.

关键词： 4It-SiC JBS diodes edge termination floating guard rings

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An InP DHBT 140 GHz-165 GHz Amplifier

An InP DHBT 140 GHz-165 GHz Amplifier

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IEEE International Conference on Communication Problem-Solving

作者： Sun Yan Cheng Wei Li Ou Peng Lu Hai Yan Li Xiao Wang Yuan Niu Bin Scienceand Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Fundamental Science on EHF Laboratory University of Electronic Science and Technology of China

ISBN: (纸本)9781467365451

We present a compact, 3-stage millimeter-wave monolithic integrated circuit (MMIC) amplifier with an operating frequency of 140-165 GHz, formed by common-emitter configured 0.5 μm InP DHBTs and a multilayer thin-film microstrip (TFM) wiring environment. The amplifier smallsignal gain exhibits >5 dB from 140 GHz-165 GHz. The peak gain is 11 dB at 140 GHz. This is the first time reported InP DHBT MMIC amplifier operating in D-band employing TFM in china. The total size of this 3-stage amplifier is only 1.04 mm×0.88 mm.

关键词： Indium phosphide (InP) Heterojunction bipolar transistors (HBTs) Millimeter-wave monolithic integrated circuit (MMIC) Amplifier D-band Thin-film microstrip (TFM)

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An InP DHBT 140 GHz-165 GHz Amplifier

An InP DHBT 140 GHz-165 GHz Amplifier

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2015 International Conference on Communication Problem-Solving(ICCP)

We present a compact, 3-stage millimeter-wave monolithic integrated circuit(MMIC) amplifier with an operating frequency of 140-165 GHz, formed by common-emitter configured 0.5 um In P DHBTs and a multilayer thin-film microstrip(TFM) wiring environment. The amplifier smallsignal gain exhibits >5 dB from 140 GHz-165 GHz. The peak gain is 11 dB at 140 GHz. This is the first time reported In P DHBT MMIC amplifier operating in D-band employing TFM in china. The total size of this 3-stage amplifier is only 1.04 mm ×0.88 mm.

关键词： Indium phosphide(InP) Heterojunction bipolar transistors(HBTs) Millimeter-wave monolithic integrated circuit(MMIC) Amplifier D-band thin-film microstrip(TFM)

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A 140-190 GHz Amplifier Based on 0.5-um InP DHBT Transistor

A 140-190 GHz Amplifier Based on 0.5-um InP DHBT Transistor

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2015 International Conference on Communication Problem-Solving(ICCP)

作者： Xiao Li Oupeng Li Yan Sun Wei Cheng Lei Wang Ruimin Xu Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute School of Electronic Engineering University of Electronic Science and Technology of China

A four-stage amplifier MMIC operating at G-Band（140-220GHz） is demonstrated in this letter. The amplifier utilizes a 0.5-um single emitter InP DHBT technology. The transistor exhibits collector current density of 2 mA/um, f of 250 GHz and f of 320 GHz at I=12mA and V=1.5V. The chip size is 1mm×1.1mm. Measurements show that the small signal gain is above 3 dB over 149-180 GHz frequency band, and return loss is lower than-10 dB from 140 GHz to 153 GHz.

关键词： InP heterojunction bipolar transistor ampli-fier millimeterwave G-band monolithic microwave integrated circuit(MMIC)

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A 140-190 GHz Amplifier Based on 0.5-um InP DHBT Transistor

A 140-190 GHz Amplifier Based on 0.5-um InP DHBT Transistor

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IEEE International Conference on Communication Problem-Solving

ISBN: (纸本)9781467365451

A four-stage amplifier MMIC operating at G-Band (140-220GHz) is demonstrated in this letter. The amplifier utilizes a 0.5-um single emitter InP DHBT technology. The transistor exhibits collector current density of 2 mA/um~2, f_T of 250 GHz and f_(max) of 320 GHz at I_c = 12mA and V_(CE) = 1.5V. The chip size is 1mm×1.1mm. Measurements show that the small signal gain is above 3 dB over 149-180 GHz frequency band, and return loss is lower than -10 dB from 140 GHz to 153 GHz.

关键词： InP heterojunction bipolar transistor Amplifier Millimeterwave G-band monolithic microwave integrated circuit (MMIC)

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220GHz on-wafer measurement based on TRL calibration method

220GHz on-wafer measurement based on TRL calibration method

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2015 IEEE 12th International Conference on Electronic Measurement & Instruments

作者： Lu Haiyan Cheng Wei Zhou Zhijiang Zhou Jianjun Wang Yuan Kong Yuechan Chen Tangshen Science and Technology on Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute Hangzhou Dianzi University

This paper introduced a thru-reflect-line（TRL） calibration standard design for on-wafer measurement. The calibration kits were simulated and fabricated on Indium Phosphide（ In P） substrate. The calibration kits covered a range of frequencies from 70 to 220 GHz. On-wafer calibration performed with the microstrip transmission line style contacts was described in this work. The calibration is sufficient to extract reliable device data from measurements. This paper also decribed a thru de-embedding method. This method show reasonable performance up to 60 GHz. Thru de-embedding method and TRL calibration are compared with the simulated transmission lines up to 220 GHz. The measurement result with TRL calibration method shows good agreement with the simulation result.

关键词： DE-EMBEDDING TRL Terahertz（THz） measurement

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100GHz Static Frequency Divider Based on 0.5μm InP/InGaAs DHBT

100GHz Static Frequency Divider Based on 0.5μm InP/InGaAs D...

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IEEE International Conference on Communication Problem-Solving

作者： Bin Niu Wei Cheng You-Tao Zhang Yuan Wang Hai-Yan Lu Long Chang Jun-Ling Xie Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

A static divide-by-2 frequency divider based on InP/InGaAs DHBT technology is presented. On chip thin film resistor and capacitor were integrated. Two levels of interconnect were developed. Composite collector design ... 详细信息

ISBN: (纸本)9781467365451

关键词： frequency dividers Static frequency divider Double heterojunction bipolar transistors Capacitors FILM RESISTORS THIN FILM RESISTORS

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High-Performance Monolayer WS2 Field-effect Transistors on High-κ Dielectrics

High-Performance Monolayer WS2 Field-effect Transistors on H...

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The 6th International Conference on Nanoscience & technology, China 2015

作者： Yang Cui Run Xin Zhihao Yu Yiming Pan Zhun-Yong Ong Xiaoxu Wei Junzhuan Wang Yun Wu Tangsheng Chen Yi Shi Baigeng Wang Yong-Wei Zhang Gang Zhang Xinran Wang National Laboratory of Solid State Microstructures School of Electronic Science and Engineeringand Collaborative Innovation Center of Advanced MicrostructuresNanjing University School of Physics Nanjing University Institute of High Performance Computing Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Device Institute

WS2 is an attractive two-dimensional semiconductor material for electronic and optoelectronic device applications due to its high phonon limited mobility compared to other transition metal dichalcogenides. The measured field-effect mobility thus far, however, is much smaller than theoretical predictions, dominated by extrinsic factors including charge traps and impurities. Here, we report that the combination of high-quality Al2O3 dielectric substrate and thiol chemistry passivation could effectively reduce the interface traps and Coulomb impurities, leading to a significant improvement of device performances. Especially, metallic transport is observed at higher carrier density and low temperature. Moreover, through repairing sulfur vacancies, record high mobility is reached at room temperature(83 cm2V-1s-1) and low temperature(337 cm2V-1s-1). Furthermore, we develop a theoretical model for explaining charge transport in the monolayer WS2. Our work provides a viable route towards studying intrinsic charge transport in monolayer WS2 devices.

关键词： tungsten disulfide(WS2),transition metal dichalcogenides(TMDs),mobility,interface

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