In this paper, an ultra-wideband 6-bit digitally controlled attenuator MMIC for the active phased array that integrates positive voltage digital driving circuits was developed, utilizing GaAs enhanced and depletion mo...
In this paper, an ultra-wideband 6-bit digitally controlled attenuator MMIC for the active phased array that integrates positive voltage digital driving circuits was developed, utilizing GaAs enhanced and depletion mode p-HEMT process. The attenuator design operates in an ultra-wide bandwidth of 2-18 GHz, with a dynamic attenuation range of 0.5-31.5 dB and an attenuation accuracy of less than 0.9 dB over the entire frequency band. The integrated DCFL (direct coupling field effect transistor logic) inverter circuit on the chip enables direct control of the attenuator with a positive voltage while occupying a chip area of only 2.7 mm 2 .
In this study, a broadband monolithic microwave integrated circuit (MMIC) double-balanced mixer designed for operation within the frequency range of 8–26 GHz is presented. The design is implemented using a 0.15 μm G...
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In this study, a broadband monolithic microwave integrated circuit (MMIC) double-balanced mixer designed for operation within the frequency range of 8–26 GHz is presented. The design is implemented using a 0.15 μm GaAs process. Traditional Marchand baluns, when applied to wideband mixers, face challenges in simultaneously achieving broad bandwidth and good port matching characteristics. To address this issue, we employ a spiral Marchand balun with a compensation capacitor. This innovative approach not only maintains the mixer’s wide bandwidth but also enhances the matching between the local oscillator (LO) and radio frequency (RF) ports. Additionally, it significantly simplifies the complexity of designing the matching circuit. The optimization principle of the compensation capacitor is elaborated in detail within this paper. Experimental results demonstrate that, with an LO power of 14 dBm, the conversion loss remains below 8.5 dB, while the voltage standing wave ratio (VSWR) of the LO and IF ports is less than 2 and the VSWR of the RF port is below 2.4. In comparison with existing literature, our designed mixer exhibits a broader bandwidth and lower loss.
This paper mainly introduces a method to build a nonlinear model of MHEMT, mainly to solve the problem of short channel effect of MHEMT. In order to accurately characterize the active devices below 110GHz, a LRRM cali...
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monolithic integration has been demonstrated to be an ideal solution to minimize the parasitics in GaN power IC. Nonetheless, the current commercially GaN process for power IC is far less mature and only n-type HEMTs ...
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In this paper, an aging small-signal S-parameters modeling method for microwave transistors is explored using a genetic algorithm (GA) to optimize the Extreme Learning Machine (ELM) neural network. A dual GA-ELM neura...
In this paper, an aging small-signal S-parameters modeling method for microwave transistors is explored using a genetic algorithm (GA) to optimize the Extreme Learning Machine (ELM) neural network. A dual GA-ELM neural network architecture was used to simulate the fresh S-parameters of InP heterojunction bipolar transistor (HBT) devices and the degradation of S-parameters after accelerated aging, respectively. Good agreement was achieved between measured and predicted results of the fresh and aging S-parameters within a frequency range of 0.1 to 40 GHz.
Gallium Arsenide Schottky barrier diodes (GaAs SBDs) are widely used in terahertz (THz) applications. Quartz substrate has recently emerged as a promising platform for GaAs SBDs due to its intrinsically low permittivi...
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Gallium Arsenide Schottky barrier diodes (GaAs SBDs) are widely used in terahertz (THz) applications. Quartz substrate has recently emerged as a promising platform for GaAs SBDs due to its intrinsically low permittivity under THz. Here, we demonstrate transferring of GaAs SBD active layers with electrodes to a quartz wafer using micro-transfer printing method. This allows as a versatile approach for future THz mixers and multipliers.
A 52.5GHz-66GHz frequency tripler using $0.13\mu\mathrm{m}$ SiGe HBT process is presented, which adopts a single balanced structure, with a high conversion gain up to 14.3dB. A maximum saturated output power $(\mat...
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ISBN:
(数字)9781665481977
ISBN:
(纸本)9781665485838
A 52.5GHz-66GHz frequency tripler using $0.13\mu\mathrm{m}$ SiGe HBT process is presented, which adopts a single balanced structure, with a high conversion gain up to 14.3dB. A maximum saturated output power $(\mathrm{P}_{\text{sat}})$ up to 12.3dBm@57GHz is measured, with a 3-dB bandwidth of 13.5GHz (22.7 % relative bandwidth). A folded marchand balun is applied to transform single-end signals into differential ones, with an amplitude difference less than 0.5dB and a phase difference within $180\pm 6$ degrees. A gain enhancing technique is also adopted. The chip size is $620\mu\mathrm{m}\times 200\mu\mathrm{m}$ without pads and $880\mu\mathrm{m}\times520\mu\mathrm{m}$ altogether.
This paper presents a high-power 340 GHz frequency doubler based on GaN Schottky barrier diode (SBD) technology. The proposed frequency doubler consists of a pair of GaN SBDs chips, a quartz circuit, as well as the tr...
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This paper presents a high-power 340 GHz frequency doubler based on GaN Schottky barrier diode (SBD) technology. The proposed frequency doubler consists of a pair of GaN SBDs chips, a quartz circuit, as well as the transition waveguides. To improve the power handling capabilities, a pair of GaN SBDs chips with six anodes in total is flip-chip mounted on the quartz circuit. The suspended microstrip line is employed in the circuit on quartz due to its low-attenuation characteristics at terahertz frequencies. To enhance the electrical performance of frequency doubler, low-loss transition structures are designed. The proposed frequency doubler shows a simulated output power of 300 mW with a conversion efficiency of 20% at 340 GHz.
The short channel effects (SCEs) are mainly caused by the generated insufficient depletion region under the gate, which can severely reduce the reliability of devices. In this paper, the effects are analyzed by the pr...
The short channel effects (SCEs) are mainly caused by the generated insufficient depletion region under the gate, which can severely reduce the reliability of devices. In this paper, the effects are analyzed by the proposed metal-insulator-semiconductor (MIS) capacitance model and can be suppressed by the applied high-k upper passivation layer (UPL). To verify the proposed model, the hydrogen-terminated diamond MIS field-effect transistors (C-H diamond MISFETs) with a 40-/100-$\mathrm{nm} \,\mathrm{Al}_{2} \mathrm{O}_{3} / \mathrm{HfO}_{2}$ stacked passivation layer were fabricated. Benefiting from the 100 -nm-thick HfO 2 UPL, the SCEs are suppressed and a high on/off ratio of $\sim 1 \times 10^{9}$ is achieved in the C-H diamond MISFET even a low aspect ratio of 7.5 for the first time. A cut-off frequency (${f}_{\mathrm{T}})$ of 6.1GHz and maximum oscillation frequency $\left(f_{\max }\right.$) of 11.1GHz were also obtained. The above results indicate that C-H diamond MISFETs with a high-k UPL in this work are promising in the high reliability and high frequency applications.
Based on SMIC 180nm CMOS process and 1.8/3.3V power supply voltage, a high-speed pipeline ADC is designed in this paper. After a comprehensive consideration of conversion rate and accuracy, the pipelined architecture ...
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