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International Symposium on Antennas and Propagation (ISAP)

作者： Liwei Yan Shuang Peng Kai Zhang Ziqiang Wang Chenxi Liu Fei Yang State Key Laboratory of Millimeter Wves Southeast University Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China

In this paper, an ultra-wideband 6-bit digitally controlled attenuator MMIC for the active phased array that integrates positive voltage digital driving circuits was developed, utilizing GaAs enhanced and depletion mode p-HEMT process. The attenuator design operates in an ultra-wide bandwidth of 2-18 GHz, with a dynamic attenuation range of 0.5-31.5 dB and an attenuation accuracy of less than 0.9 dB over the entire frequency band. The integrated DCFL (direct coupling field effect transistor logic) inverter circuit on the chip enables direct control of the attenuator with a positive voltage while occupying a chip area of only 2.7 mm 2 .

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Modeling Techniques for MHEMT Devices up to 110GHz 13

Modeling Techniques for MHEMT Devices up to 110GHz

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13th International Conference on Microwave and Millimeter Wave technology, ICMMT 2021

作者： Lu, Haiyan Wu, Shaobin Chen, Jixin Chen, Tangsheng Science And Technology On Monolithic Integrated Circuits And Modules Laboratory Nanjing China Southeast University China Nanjing Electronic Devices Institute China

ISBN: (纸本)9781665434379

This paper mainly introduces a method to build a nonlinear model of MHEMT, mainly to solve the problem of short channel effect of MHEMT. In order to accurately characterize the active devices below 110GHz, a LRRM calibration kit was designed to be implemented on the same substrate as the devices. According to the improved Angelov model method, the equivalent circuit of MHEMT device is extracted. Excellent agreements between measured and simulated data are obtained in the frequency up to 110 GHz. © 2021 IEEE.

关键词： Equivalent circuits

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A High-Speed Level Shifter with dVs/dt Noise Immunity Enhancement Structure for 200V monolithic GaN Power IC 35

A High-Speed Level Shifter with dVs/dt Noise Immunity Enhanc...

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35th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2023

作者： Zheng, Yifei Yuan, Qing Song, Deyuan Ying, Yutao Zhu, Jing Sun, Weifeng Zhang, Long Li, Sheng Wang, Denggui Zhou, Jianjun Zhang, Sen He, Nailong National Asic System Engineering Research Center Southeast University Nanjing210096 China Nanjing Electronic Devices Institute Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing210016 China Wuxi Chipown Micro-electronics Limited Wuxi China Csmc Technologies Corporation Technology Development Department Wuxi China

ISBN: (纸本)9798350396829

monolithic integration has been demonstrated to be an ideal solution to minimize the parasitics in GaN power IC. Nonetheless, the current commercially GaN process for power IC is far less mature and only n-type HEMTs are available. Therefore, it is difficult for high voltage level shifters to achieve high speed. This work implements a level shifter for GaN IC to achieve both small response time and high d VSdt noise immunity without complicated signal processing circuits, thus delay and conduction loss will be minimized. The proposed circuit was fabricated in a $1μm GaN-on-Silicon process and measured results were performed to verify the characteristics. © 2023 IEEE.

关键词： Gallium nitride

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An Aging Small-signal Modeling Method of Microwave Transistors Using GA-ELM Neural Network

An Aging Small-signal Modeling Method of Microwave Transisto...

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Electronics Design Automation (ISEDA), International Symposium of

作者： Lin Cheng Hongliang Lu Xiuxiu Guo Silu Yan Wei Cheng Yuming Zhang School of Microelectronics Xidian University Xi'an China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China

In this paper, an aging small-signal S-parameters modeling method for microwave transistors is explored using a genetic algorithm (GA) to optimize the Extreme Learning Machine (ELM) neural network. A dual GA-ELM neural network architecture was used to simulate the fresh S-parameters of InP heterojunction bipolar transistor (HBT) devices and the degradation of S-parameters after accelerated aging, respectively. Good agreement was achieved between measured and predicted results of the fresh and aging S-parameters within a frequency range of 0.1 to 40 GHz.

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A Heterogeneous Integration of GaAs Schottky Barrier Diode to Quartz Substrate Using Micro Transfer-Printing

A Heterogeneous Integration of GaAs Schottky Barrier Diode t...

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Asia Communications and Photonics Conference and Exhibition (ACP)

作者： Yuxuan Wang Kunpeng Dai Bin Niu Yuechan Kong Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing Electronic Devices Institute Nanjing China

Gallium Arsenide Schottky barrier diodes (GaAs SBDs) are widely used in terahertz (THz) applications. Quartz substrate has recently emerged as a promising platform for GaAs SBDs due to its intrinsically low permittivity under THz. Here, we demonstrate transferring of GaAs SBD active layers with electrodes to a quartz wafer using micro-transfer printing method. This allows as a versatile approach for future THz mixers and multipliers.

关键词： Printing Fabrication Electrodes Schottky diodes Gallium arsenide Schottky barriers Multichip modules

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A 52.5GHz-66GHz High Conversion Gain Frequency Tripler using $.13\mu \text{m SiGe}$ HBT process

A 52.5GHz-66GHz High Conversion Gain Frequency Tripler using...

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IEEE International Wireless Symposium (IWS)

作者： Lu Yuxiang Li Zekun Yu Jiayang Li Huanbo Zhou Peigen Lu Haiyan Chen Jixin State Key Laboratory of Millimeter Wave Southeast University Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory

ISBN: (数字)9781665481977

ISBN: (纸本)9781665485838

A 52.5GHz-66GHz frequency tripler using $0.13\mu\mathrm{m}$ SiGe HBT process is presented, which adopts a single balanced structure, with a high conversion gain up to 14.3dB. A maximum saturated output power $(\mathrm{P}_{\text{sat}})$ up to 12.3dBm@57GHz is measured, with a 3-dB bandwidth of 13.5GHz (22.7 % relative bandwidth). A folded marchand balun is applied to transform single-end signals into differential ones, with an amplitude difference less than 0.5dB and a phase difference within $180\pm 6$ degrees. A gain enhancing technique is also adopted. The chip size is $620\mu\mathrm{m}\times 200\mu\mathrm{m}$ without pads and $880\mu\mathrm{m}\times520\mu\mathrm{m}$ altogether.

关键词： Harmonics suppression Power measurement Baluns Power amplifiers Bandwidth Frequency conversion Heterojunction bipolar transistors

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Design of a 340 GHz GaN-Based Frequency Doubler with High Output Power

Design of a 340 GHz GaN-Based Frequency Doubler with High Ou...

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IEEE Asia-Pacific Conference on Antennas and Propagation (APCAP)

作者： Yiyuan Zheng Kai Zhang Kunpeng Dai Yuechan Kong Gang Lin Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing Electronic Devices Institute Nanjing China

This paper presents a high-power 340 GHz frequency doubler based on GaN Schottky barrier diode (SBD) technology. The proposed frequency doubler consists of a pair of GaN SBDs chips, a quartz circuit, as well as the transition waveguides. To improve the power handling capabilities, a pair of GaN SBDs chips with six anodes in total is flip-chip mounted on the quartz circuit. The suspended microstrip line is employed in the circuit on quartz due to its low-attenuation characteristics at terahertz frequencies. To enhance the electrical performance of frequency doubler, low-loss transition structures are designed. The proposed frequency doubler shows a simulated output power of 300 mW with a conversion efficiency of 20% at 340 GHz.

关键词： Waveguide transitions Schottky diodes Filtering Schottky barriers Frequency conversion Scattering parameters Microstrip

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Suppression of Short Channel Effects in Hydrogen- Terminated Diamond MISFETs Using an Al2 O3 / HfO2 Stacked Passivation Layer

Suppression of Short Channel Effects in Hydrogen- Terminated...

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Asia-Pacific Conference on Microwave

作者： Zhihao Chen Xinxin Yu Shuman Mao Yu Fu Jianjun Zhou Yuechan Kong Tangsheng Chen Ruimin Xu Bo Yan Yuehang Xu School of Electronic Science and Engineering University of Electronic Science and Technology of China Chengdu China Research Center of Integrated Circuits and Systems Yangtze Delta Region Institute (Huzhou) University of Electronic Science and Technology of China Huzhou China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing China

The short channel effects (SCEs) are mainly caused by the generated insufficient depletion region under the gate, which can severely reduce the reliability of devices. In this paper, the effects are analyzed by the proposed metal-insulator-semiconductor (MIS) capacitance model and can be suppressed by the applied high-k upper passivation layer (UPL). To verify the proposed model, the hydrogen-terminated diamond MIS field-effect transistors (C-H diamond MISFETs) with a 40-/100-$\mathrm{nm} \,\mathrm{Al}_{2} \mathrm{O}_{3} / \mathrm{HfO}_{2}$ stacked passivation layer were fabricated. Benefiting from the 100 -nm-thick HfO 2 UPL, the SCEs are suppressed and a high on/off ratio of $\sim 1 \times 10^{9}$ is achieved in the C-H diamond MISFET even a low aspect ratio of 7.5 for the first time. A cut-off frequency (${f}_{\mathrm{T}})$ of 6.1GHz and maximum oscillation frequency $\left(f_{\max }\right.$) of 11.1GHz were also obtained. The above results indicate that C-H diamond MISFETs with a high-k UPL in this work are promising in the high reliability and high frequency applications.

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A 100MS/s Pipeline ADC Without Calibration in 0.18μm CMOS technology 14

A 100MS/s Pipeline ADC Without Calibration in 0.18μm CMOS T...

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14th International Conference on Microwave and Millimeter Wave technology, ICMMT 2022

作者： Zhang, Yi Liu, Yaqin Xia, Hongliang Yang, Lei Wang, Yang Zhang, Youtao Guo, Yufeng College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing China State Key Laboratory of Millimeter Waves Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing GuoBo Electronics Co. Ltd Nanjing China Nanjing Vocational University of Industry Technology Nanjing China

ISBN: (纸本)9781665467520

Based on SMIC 180nm CMOS process and 1.8/3.3V power supply voltage, a high-speed pipeline ADC is designed in this paper. After a comprehensive consideration of conversion rate and accuracy, the pipelined architecture is finally determined to be 3.5b3+5b. The redundant calibration technology is adopted between each stage to reduce the influence of comparator offset on ADC accuracy. To reduce power consumption and area, SHA-less sampling is adopted. The traditional bootstrap switch is improved to dynamically change the substrate potential so as to reduce the influence of leakage in SHA-less sampling circuit. The post-simulation results shows that the high-speed pipeline ADC designed in this paper can reach 9.97-bit ENOB and 67.76 dB SFDR under the sampling frequency of 100MS/s and input signal frequency of Nyquist, the overall power consumption is about 390mW, and the overall area of the layout is 4.56mm2. © 2022 IEEE.

关键词： Electric power utilization

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Nondestructive visualization of graphene on Pt with methylene blue surface modification

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science China Materials 2022年第10期65卷 2763-2770页

作者： He Kang Yanhui Zhang Yun Wu Shike Hu Jing Li Zhiying Chen Yanping Sui Shuang Wang Sunwen Zhao Runhan Xiao Guanghui Yu Songang Peng Zhi Jin Xinyu Liu State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Device InstituteNanjing 210016China Microwave Devices and Integrated Circuits Department Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China

Efficient large-scale nondestructive quality assessment of graphene on Pt is essential to the in-depth growth research and practical applications of ***,we present a very simple method for directly observing the domains and defects in graphene on Pt using an ordinary optical *** was achieved by modifying graphene on Pt using methylene blue(MB).Because the chemical activities of graphene and Pt surface differ significantly,the adsorption and reaction of MB on graphene and platinum surface *** can determine the distribution of graphene crystal domains and defects by comparing the colors in the optical *** addition,this characterization method causes no obvious damage to the Pt substrate and ***,it does not affect the recycling of the substrate or the subsequent characterization or application of *** study provides a nondestructive method for measuring the quality of graphene on Pt on a large scale,as well as a reference for the characterization and doping of other two-dimensional materials.

关键词： graphene Pt nondestructive visualization surface modification methylene blue

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