An 850 nm monolithically integrated optical receiver front end has been developed with 0.5 μm GaAs PHEMT process, mesa process and interconnected photolithography technology between mesa and plane, which comprises a ...
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An 850 nm monolithically integrated optical receiver front end has been developed with 0.5 μm GaAs PHEMT process, mesa process and interconnected photolithography technology between mesa and plane, which comprises a metal-semiconductor-metal (MSM) photodetector and a transimpedance preamplifier. The photodetector has a photosensitive area and a capacitance of 2000 μm2 and 0.15 pF respectively, as well as a dark current of less than 14 nA under a bias of 4 V. The transimpedance preamplifier has a -3 dB bandwidth close to 10 GHz, with a transimpedance of 43 dBΩ;The front end has a relatively clear output eye diagram for the 850 nm optical signal modulated by 2.5 Gb/s NRZ pseudorandom binary sequence.
A kind of single power supply transimpedance preamplifier (TIA) for optical receiver is developed, using 0.5 μm GaAs PHEMT process. The TIA has a measured -3 dB bandwidth of 9.5 GHz, with transimpedance gain of 43.5&...
详细信息
A kind of single power supply transimpedance preamplifier (TIA) for optical receiver is developed, using 0.5 μm GaAs PHEMT process. The TIA has a measured -3 dB bandwidth of 9.5 GHz, with transimpedance gain of 43.5±1.5 dBΩ in the range of 50 MHz-7.5 GHz. The return losses of input and output ports are both less than -10 dB. The noise figure (NF) varies from 4 dB to 6.5 dB within the bandwidth, while the calculated minimal equivalent input noise current density is about 17.6 pA/√Hz. The measured output eye diagram for 12 Gb/s NRI pseudorandom binary sequence is clear and satisfying.
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