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Effect of X-ray irradiation on threshold voltage of AlGaN/GaN HEMTs with p-GaN and MIS Gates

Nanotechnology and Precision Engineering 2020年第4期3卷 241-243页

作者： Yongle Qi Denggui Wang Jianjun Zhou Kai Zhang Yuechan Kong Suzhen Wu Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices InstituteNanjing 210016China China Electronics Technology Group Corporation No.58 Research Institute Wuxi 204035China

Commercially available AlGaN/GaN high-electron-mobility transistors(HEMTs)are beginning to enter the public scene froma range of *** on previous studies,commercial GaN-based electronics are expected to be tolerant to different types of irradiation in *** test this assumption,we compared the characteristic electrical curves obtained at different X-ray irradiation doses for GaN HEMT devices manufactured by Infineon and *** p-GaN-based device was found to be more robust with a stable threshold voltage,whereas the threshold voltage of the device with ametal-insulator-semiconductor gatewas found to shift first in the negative and then the positive *** dynamic phenomenon is caused by the releasing and trapping effects of radiation-induced charges in the dielectric layer and at the interface of irradiated *** such,the p-GaNgate-based GaN HEMT provides a promising solution for use as an electric source in space.

关键词： p-GaN gate GaN HEMTs X-ray irradiation Threshold voltage

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Simulation, fabrication and characterization of 4500v 4H-SiC normallyoff VJFET

Simulation, fabrication and characterization of 4500v 4H-SiC...

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2013 International Conference on Precision Mechanical Instruments and Measurement technology, ICPMIMT 2013

作者： Huang, Run Hua Chen, Gang Bai, Song Li, Rui Li, Yun Tao, Yong Hong Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing Electronic Devices Institute Nanjing China

Simulation, Fabrication and characteristics of high voltage, normally-off JFETs in 4HSiC are presented. The devices were built on ND= 1.0×1015 cm-3 doped 50μm thick n-type epilayer grown on a n+ 4H-SiC. Parameters of edge termination have been optimized by simulations. Its blocking voltage exceeds 4500V at gate bias VG = -6V and forward drain current is in excess of 3A at gate bias VG = 3V and drain bias VD = 5V corresponding a current density of 80A/cm2. © 2013 Trans Tech Publications Ltd, Switzerland.

关键词： Silicon carbide

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Development of self-aligned process to decrease gate length in recessed SiC SIT

Development of self-aligned process to decrease gate length ...

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2014 International Conference on Manufacturing technology and Electronics Applications, ICMTEA 2014

作者： Chen, Gang Bai, Song Wang, Lin Tao, Yong Hong Liu, Haiqi Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing Electronic Devices Institute Nanjing China

ISBN: (纸本)9783038353287

Because of difficulty in deep ion implantation, the recessed gate structure has been favored in SiC SIT. In order to improve the frequency, it is a good method to decrease the gate length by eliminating the side wall ion implantation affection. We developed normally-on RF 4H-SiC SIT with high small signal gain. The effect of forming the side wall protection between the source mesa and the gate area was simulated. © (2014) Trans Tech Publications, Switzerland.

关键词： Silicon carbide

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The performance of thin barrier InAlN/AlN/GaN MIS HEMT with high dielectric insulators

The performance of thin barrier InAlN/AlN/GaN MIS HEMT with ...

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2010 International Conference on Microwave and Millimeter Wave technology, ICMMT 2010

作者： Zhou, J.J. Dong, X. Liu, H.Q. Chen, T.S. Chen, C. National Key Laboratory of Science technology on Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute Nanjing 210016 China

ISBN: (纸本)9781424457052

High quality thin barrier InAlN/AlN/GaN heterostructure was grown by metal-organic chemical vapor deposition (MOCVD). The metal-insulator- semiconductor (MIS) structure devices were fabricated with high dielectric constant material barium strontium titanate (BST). The gate leakage current is reduced more than one order of magnitude under 40 V reverse bias, by using the high dielectric constant material. High transconductance 200 mS/mm was obtained with 1um gate length. The influence of the high dielectric BST material on the performance of the MIS structure is also investigated. © 2010 IEEE.

关键词： Strontium titanates

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Fabrication and application of 1.7KV SiC-Schottky diodes

Fabrication and application of 1.7KV SiC-Schottky diodes

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European Conference on Silicon Carbide and Related Materials, ECSCRM 2014

作者： Chen, G. Bai, S. Liu, A. Wang, L. Huang, R.H. Tao, Y.H. Li, Y. Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing Electronic Devices Institute Nanjing China

ISBN: (纸本)9783038354789

High voltage 4H-SiC Ni metal junction barrier schottky (JBS) diode with reverse breakdown voltage of 1700 V and forward current of 5 A has been fabricated. A low reverse leakage current below 3.8×10-5 A/cm2 at the bias voltage of -1700 V has been obtained. The forward on-state current was 5 A at VF = 1.7 V and 15.8 A at VF = 3 V. The chip is 2.52mm × 2.52 mm. The turn-on voltage is about 0.9 V. The on-state resistance is 8.7 mΩ·cm2. The optimal structure (doping and thickness of the N-type drift layer) has been determined by numerical simulations. The SiC JBS devices have been fabricated and the processes were in detail. The die was assembled in a TO-220 package. The thickness of the N- epilayer is 18.5 μm, and the doping concentration is 3.2×1015 cm−3. The number of floating guard p-rings was chosen to be 25, the distance between the rings was chosen to be 0.7 μm ~ 1.3 μm that has little effect on the reverse I-V characteristics of the JBS diodes, and the width of the p-rings is 2.5 μm. We use the PECVD SixNy/SiO2 as the passivation dielectric and a non photosensitive polyamide as the passivation in the end. The reverse current Ir was 1.26 A and the reverse recovery time Trr was 26 ns which corresponds to a maximum switching frequency of 38.46 MHz, when the diode was switched from 5 A forward current to a reverse voltage of 700V. The reverse recovery electric charge Qrr of 16 nC was obtained. © (2015) Trans Tech Publications, Switzerland.

关键词： Silicon carbide

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W-band AlGaN/GaN MMIC PA with 3.1W output power 14

W-band AlGaN/GaN MMIC PA with 3.1W output power

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14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China, SSLChina: IFWS 2017

作者： Shaobing, Wu Fangjin, Guo Jianfeng, Gao Weibo, Wang Zhonghui, Li Nianning, Huang Tangsheng, Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute East Zhongshan Road Nanjing China

ISBN: (纸本)9781538648513

A balanced four-stage W-band GaN MMIC PA with Lange couplers and micro-strips matching elements is reported. Electron-beam lithography has been used to produce a 100 nm T-shaped gate on the AlGaN/GaN HEMT structure with ultrahigh aluminum content. The MMIC PA offers a small signal gain of greater than 18 dB and an output power of greater than 2.5W from 88GHz to 93GHz with an associated power gain of greater than 15 dB. Moreover, it achieves a peak output power of 3.1W (34.9dBm) at 91GHz in continuous-wave mode, with an associated power density of 3.23W/mm. Most notably, it is the first time that the peak output power and power density exceed 3W and 3W/mm in AlGaN/GaN HEMT at W-band simultaneously. © 2017 IEEE.

关键词： Electron beam lithography

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A 2-18 GHz 6-Bit GaAs Positive Voltage Driven Digitally Controlled Attenuator for Phased Array

A 2-18 GHz 6-Bit GaAs Positive Voltage Driven Digitally Cont...

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2023 IEEE International Symposium on Antennas and Propagation, ISAP 2023

作者： Yan, Liwei Peng, Shuang Zhang, Kai Wang, Ziqiang Liu, Chenxi Yang, Fei Wves Southeast University State Key Laboratory of Millimeter Nanjing China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China

ISBN: (纸本)9798350341140

In this paper, an ultra-wideband 6-bit digitally controlled attenuator MMIC for the active phased array that integrates positive voltage digital driving circuits was developed, utilizing GaAs enhanced and depletion mode p-HEMT process. The attenuator design operates in an ultra-wide bandwidth of 2-18 GHz, with a dynamic attenuation range of 0.5-31.5 dB and an attenuation accuracy of less than 0.9 dB over the entire frequency band. The integrated DCFL (direct coupling field effect transistor logic) inverter circuit on the chip enables direct control of the attenuator with a positive voltage while occupying a chip area of only 2.7 mm2. © 2023 IEEE.

关键词： attenuator E/D p-HEMT GaAs MMIC ultra-wideband circuit

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Fabrication of L band 4H-SiC SiT devices

Fabrication of L band 4H-SiC SiT devices

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2013 International Conference on Precision Mechanical Instruments and Measurement technology, ICPMIMT 2013

作者： Chen, Gang Jiang, Hao Zhong, Shi Chang Bai, Song Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing 210016 China Nanjing Electronic Device Institute Nanjing 210016 China

Silicon carbide (SiC) static induction transistors (SITs) were fabricated using homegrown epi structures. The gate is a recessed gate - bottom contact (RG - B). The mesa space designed is 2.5 μm and the gate channel is 1.0 μm. The developed devices adopted a p-type Al ion implanted gate and power performance was improved by decreased leakage current and enhanced break-down voltage. The lift-off with assistant dielectric, dense gate recess etching, high temperature anneals and PECVD passivation process technologies are adopted. One cell has 200 source fingers and each source finger width is 50 μm. 0.5 mm SiC SIT yield a current density of 110 mA/mm at a drain voltage of 50 V. A maximum current density of 160 mA/mm was achieved with Vd = 80V, and the maximum transconductance is 40mS/mm. The device blocking voltage with a gate bias of -12 V was 400 V. Packaged 2 × 2-cm devices were evaluated using amplifier circuits designed for class AB operations. A total power output in excess of 70 W was obtained with a power density of 17.5 W/cm and gain of 5.5 dB at L band 1 GHz under pulse 100μs and cycle ratio 1% RF operation and 80V drain to source voltage. © 2013 Trans Tech Publications Ltd, Switzerland.

关键词： Drain current

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Millimeter-wave design and fabrication of GaAs micromachined patch antenna

Millimeter-wave design and fabrication of GaAs micromachined...

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2012 IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless technology and Applications, IMWS 2012

作者： Pan, Li-Na Jia, Shi-Xing Hou, Fang Zhu, Jian Yu, Yuan-Wei Nanjing Electronic Devices Institute Nanjing 210016 China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing 210016 China

ISBN: (纸本)9781467309028

A patch antenna at Ka-band frequency based on GaAs micromachined technologies is presented in this paper. The antenna fabricated on 300μm-thick GaAs substrate with a cavity etched in it produces a low effective dielectric region around the patch leading to improvement of bandwidth and radiation. The bandwidth of 4.1%, gain of 7.27dB and radiation efficiency of 79.5% at 36.3GHz have been simulated. The experimental results show that the bandwidth is 4.4% at 36.29GHz. © 2012 IEEE.

关键词： MEMS

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Modeling Techniques for MHEMT Devices up to 110GHz 13

Modeling Techniques for MHEMT Devices up to 110GHz

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13th International Conference on Microwave and Millimeter Wave technology, ICMMT 2021

作者： Lu, Haiyan Wu, Shaobin Chen, Jixin Chen, Tangsheng Science And Technology On Monolithic Integrated Circuits And Modules Laboratory Nanjing China Southeast University China Nanjing Electronic Devices Institute China

ISBN: (纸本)9781665434379

This paper mainly introduces a method to build a nonlinear model of MHEMT, mainly to solve the problem of short channel effect of MHEMT. In order to accurately characterize the active devices below 110GHz, a LRRM calibration kit was designed to be implemented on the same substrate as the devices. According to the improved Angelov model method, the equivalent circuit of MHEMT device is extracted. Excellent agreements between measured and simulated data are obtained in the frequency up to 110 GHz. © 2021 IEEE.

关键词： Equivalent circuits

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