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Remarkable average thermoelectric performance of the highly oriented Bi(Te,Se)-based thin films and devices

Journal of Materiomics 2024年第2期10卷 366-376页

作者： Zhiliang Li Xiaoqi Yang Zhi Gao Jingxuan Wang Yuli Xue Jianglong Wang Qian Cao Zhihai Ding Shufang Wang Hebei Key Lab of Optic-Electronic Information and Materials Key Laboratory of High-Precision Computation and Application of Quantum Field Theory of Hebei ProvinceCollege of Physics Science and TechnologyHebei UniversityBaoding071002China Huabei Cooling Device Co. LtdXianghe065400China

Bi(Te,Se)-based compounds have attracted lots of attention for nearly two centuries as one of the most successful commercial thermoelectric(TE)materials due to their high performance at near room *** with 3D bulks,2D thin films are more compatible with modern semiconductor technology and have unique advantages in the construction of micro-and *** device applications,high average TE performance over the entire operating temperature range is ***,highly c-axis-oriented N-type Bi(Te,Se)epitaxial thin films have been successfully prepared using the pulsed laser deposition technology by adjusting the deposition *** film deposited at~260℃demonstrate a remarkable average power factor(PFave)of~24.4 mW·cm^(-1)·K^(-2)over the tem-perature range of 305e470 K,higher than most of the state-of-the-art Bi(Te,Se)-based ***,the estimated average zT value of the film is as high as~*** then constructed thin-film TE devices by using the above oriented Bi(Te,Se)films,and the maximum output power density of the device can reach up to~30.1 W/m^(2)under the temperature difference of 40 ***,the outstanding average TE performance of the highly oriented Bi(Te,Se)thin films will have an excellent panorama of applications in semiconductor cooling and power generation.

关键词： Bismuth telluride Oriented thin film Thermoelectric device Average power factor Output power density

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Using multi-scale interaction mechanisms in yolk-shell structured C/Co composite materials for electromagnetic wave absorption

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材料科学技术（英文版） 2025年第12期215卷 36-44页

作者： Jintang Zhou Kexin Zou Jiaqi Tao Jun Liu Yijie Liu Lvtong Duan Zhenyu Cheng Borui Zha Zhengjun Yao Guiyu Peng Xuewei Tao Hexia Huang Yao Ma Peijiang Liu Key Laboratory of Material Preparation and Protection for Harsh Environment Ministry of Industry and Information TechnologyCollege of Materials Science and TechnologyNanjing University of Aeronautics and AstronauticsNanjing211100China Yuxi Research Institute Yuxi Industries GroupChina North Industries CroupNanyang473000China School of Materials Science and Engineering Nanjing Institute of TechnologyNanjing211167China Key Laboratory of Material Preparation and Protection for Harsh Environment Ministry of Industry and Information TechnologyCollege of Materials Science and TechnologyNanjing University of Aeronautics and AstronauticsNanjing211100China College of Energy and Power Engineering Nanjing University of Aeronautics and AstronauticsNanjing210016China National Key Laboratory on Electromagnetic Environmental Effects and Electro-optical Engineering Army Engineering UniversityNanjing210007China Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory the 5th Electronics Research Institute of the Ministry of Industry and Information TechnologyGuangzhou511370China

Advanced chemical engineering for simultaneous modulation of nanomaterial morphology,defects,inter-faces,and structure to enhance electromagnetic and microwave absorption(MA)***,accurately distinguishing the MA contributions of different scale factors and tuning the optimal com-bined effects remains a formidable *** study employs a synergistic approach combining tem-plate protection etching and vacuum annealing to construct a controlled system of micrometer-sized cav-ities and amorphous carbon matrices in metal-organic framework(MOF)*** results demon-strate that the spatial effects introduced by the hollow structure enhance dielectric loss but significantly weaken impedance *** increasing the proportion of amorphous carbon,the balance between electromagnetic loss and impedance matching can be effectively ***,in a suitable graphitization environment,the presence of oxygen vacancies in amorphous carbon can induce signif-icant polarization to compensate for the reduced conductivity loss due to the absence of sp2 *** the synergistic effects of morphology and composition,the samples exhibit a broader absorp-tion bandwidth(6.28 GHz)and stronger reflection loss(-61.64 dB)compared to the original *** conclusion,this study aims to elucidate the multiscale impacts of macroscopic micro-nano structure and microscopic defect engineering,providing valuable insights for future research in this field.

关键词： MOFs Multi-scale regulation Yolk-shell structure Amorphous carbon Oxygen vacancy Microwave absorption

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Degradation Analysis of Double Trench-Gate SiC MOSFETs Under Single Surge Current Stress

Degradation Analysis of Double Trench-Gate SiC MOSFETs Under...

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International Conference on (ICEPT) electronic Packaging technology

作者： Mowen Zhang Qijun Wen Liang He Dezhi Ma Shuanzhu Fang Zhizheng Wang Zhiyuan He Jia-Yue Yang Yiqiang Chen Reliability Physics and Application of Electronic Component Laboratory School of Energy and Power Engineering Shandong University Science and Technology Jinan China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China School of Integrated Circuits Guangdong University of Technology Guangzhou China School of Energy and Power Engineering Shandong University Jinan China

ISBN: (数字)9798350353808

ISBN: (纸本)9798350353815

In this work, the degradation processes and mechanisms of commercial double trench gate SiC MOSFETs under single surge current (SSC) stresses are delved into. Based on comprehensive characterizations on device parameters before/after SSC stresses, we elucidate degradation behaviors exhibited by these MOSFETs. Notably, when SSC reaches the maximum value, the stability of the threshold voltage (Vth) and on-state resistance ( $R$ ds,on ) suggests that the gate oxide for these MOSFETs is not obviously influenced by SSC stresses. Additionally, scanning acoustic microscopy (SAM) analysis confirm the reliability of package. Through directly measuring the I-V characteristics of the body diode, the damage to body diode is identified as the primary cause of device failure, resulting the increase of the drain leakage current (Idss) and the loss in blocking capability. This work contributes usefully to the refinement of surge reliability assessment for SiC MOSFETs.

关键词： Degradation MOSFET Silicon carbide Current measurement Logic gates Loss measurement Threshold voltage

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Investigation of Heavy-Ion Induced Degradation and Catastrophic Burnout Mechanism in Sic Diode

SSRN

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SSRN 2024年

作者： Zhang, Hong Peng, Chao Ma, Teng Zhang, Zhan-Gang He, Yu-Juan Li, Bin Lei, Zhi-Feng Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou510610 China School of Microelectronics South China University of Technology Guangzhou510610 China

Irradiation experiment and simulation of 205-MeV Ge ion and 283-MeV I ion were used to analyze the single event leakage current (SELC) and the single event burnout (SEB) mechanism of SiC diode. Under two selected heavy ion irradiations, the ampere-magnitude pulse current were generated along with the occurrence of SEB. The SEB area was found to cover the anode metal, epitaxial layer and substrate in microscopic analysis, which resulted in damage to the forward and reverse characteristics of device. Devices were irradiated by 205-MeV Ge ion with a fluence of 5×106 n·cm-2, under 200 V and 300 V reverse bias voltages, the breakdown voltage were degraded by 70% and 82% respectively. The anode contacts of SELC devices had local fractures and displacements, which led to the degradation of breakdown characteristics. Combined Monte Carlo simulation and TCAD simulation, the SEB critical temperature appeared near the anode contact firstly when the two selected heavy ions were incident. When the two selected heavy ions were incident from Schottky and Ohmic contacts at a bias voltage of 200 V, excessive temperature in local areas and temperature differences between different anode materials caused the fractures and displacements of anode contact. © 2024, The Authors. All rights reserved.

关键词： Heavy ions

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Degradation Evaluation of Neutron Irradiation Effect on AlGaN/GaN Metal-Insulator- Semiconductor High Electron Mobility Transistors

Degradation Evaluation of Neutron Irradiation Effect on AlGa...

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International Conference on (ICEPT) electronic Packaging technology

作者： Xiaoyue Duan Pinbo Li Liang He Yijun Shi Xinghuan Chen Yiqiang Ni Jun Liu Zhiyuan He Yiqiang Chen Physics and Application of Electronic Component Laboratory School of Electrical Engineering University of South China Science and Technology on Reliability Hengyang China Physics and Application of Electronic Component Laboratory Science and Technology on Reliability Guangzhou China School of Electrical Engineering University of South China Hengyang China School of Integrated Circuits Guangdong University of Technology Guangzhou China

ISBN: (数字)9798350353808

ISBN: (纸本)9798350353815

We investigate the degradation effects of neutron irradiation on AIGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) in this work. The performance of the devices is characterized through relevant electrical current-voltage (I-V) test and capacitance- voltage (C-V) test. The result indicates that the electrical parameter of the device degrades after neutron irradiation, such as positive shift of threshold voltage, reduction in output drain current, and the increase of the on-resistance. Additionally, combining with the frequency-dependent conductance method, it displays that shallow energy level- interface states at the AIGaN/GaN heterojunction increase, along with slightly shifting to deeper energy level after neutron irradiation. Neutron irradiation introduces more interface states and increase the scattering which degrading the carrier concentration and mobility, causing related degradation on electrical performances. This study provides useful reference value for the application of GaN-based devices in the aerospace.

关键词： Degradation Performance evaluation Radiation effects Electron traps Neutrons Energy states Threshold voltage

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A Wideband Low-Noise Amplifier for 5G and Satellite Communication

A Wideband Low-Noise Amplifier for 5G and Satellite Communic...

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International Conference on Microwave and Millimeter Wave technology Proceedings

作者： Feng-Yuan Mao Zhi-Jian Chen Bin Li Zhao-hui Wu Quansheng Guan Shaowei Liao Xiaoling Lin School of Microelectronics South China University of Technology Guangzhou Guangdong China Application of Electronic Component Laboratory The Science and Technology on Reliability Physics China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou Guangdong China

ISBN: (数字)9798350389968

ISBN: (纸本)9798350389975

This paper presents an 18.5-32.5 GHz low-noise amplifier (LNA) in 0.1-μm Gallium Nitride (GaN) process for 5G base station applications. Transmission lines are introduced between decoupling capacitors to increase the isolation of RF choke. A parallel RC network is used in the last stage to improve wideband output return loss. The proposed LNA shows a peak gain of 23.2 dB with a 3-dB bandwidth from 18.5 to 32.5 GHz. The in-band noise figure (NF) is 0.65-0.9 dB. The input return loss and output return loss are both better than 10 dB. The LNA consumes 290mW and occupies a compact chip area of 2.2 ×1.3 mm 2 .

关键词： Radio frequency Low-noise amplifiers Noise figure Power transmission lines 5G mobile communication Gallium nitride Inductors

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A Fault Diagnosis Method for Power electronic Circuits Based on GADF Coding and Channel Split Residual Network

A Fault Diagnosis Method for Power Electronic Circuits Based...

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International Conference on Sensing, Diagnostics, Prognostics, and Control (SDPC)

作者： Linghui Meng Jinyang Xie Zhenwei Zhou Yiqiang Chen Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China School of Electrical Engineering Beijing Jiaotong University Beijing China

ISBN: (数字)9798350388855

ISBN: (纸本)9798350388862

With the objective to achieve an accurate diagnosis of commonly encountered fault problems in power electronic circuits and to prevent the occurrence of catastrophic failures, a soft fault diagnosis model for dc-dc converter based on the gram angle difference filed (GADF) and the channel split residual network (CSRN) is proposed. Firstly, the original fault data is coded by GADF to generate the fault data set. Secondly, channel split preprocessing (CSP) and Darwinian selection mechanism (DSM) are introduced to enhance the residual network and further construct the CSRN. CSP emphasizes the important channel features in the fault feature images by achieving a brute-force enhancement of the channel information and highlighting subtle features. DSM retains the key features and removes the secondary features during network training. The GADF-CSRN diagnosis model proposed in this paper is verified by the fault data collected from a dc-dc converter. The result showed that a diagnosis accuracy of 97.92% is achieved, surpassing the accuracy of conventional method by at least 1.85%, while exhibiting better noise resistance.

关键词： Fault diagnosis Training Resistance Accuracy DC-DC power converters Power electronics Sensors Circuit faults Integrated circuit modeling Residual neural networks

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Large spatial shifts of reflected light beam off biaxial hyperbolic materials

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Chinese physics B 2023年第11期32卷 465-471页

作者：沈加国哈思内恩宋浩元周胜付淑芳王选章王暄张强 Key Laboratory for Photonic and Electronic Bandgap Materials Chinese Ministry of Educationand School of Physics and Electronic EngineeringHarbin Normal UniversityHarbin 150025China School of Integrated Circuits Engineering Research Center for Functional CeramicsWuhan National Laboratory for OptoelectronicsHuazhong University of Science and TechnologyWuhan 430030China Key Laboratory of Engineering Dielectrics and Its Application Ministry of EducationHarbin University of Science and TechnologyHarbin 150080China

Many optical systems that deal with polarization rely on the adaptability of controlling light reflection in the lithography-free nanostructure. In this study, we explore the Goos–H?nchen(GH) shift and Imbert–Fedorov(IF) shift in a biaxial hyperbolic film on a uniaxial hyperbolic substrate. This research statistically calculates and analyzes the GH shift and IF shift for the natural biaxial hyperbolic material(NBHM). We select the surface with the strongest anisotropy within the NBHM and obtain the complex beam-shift spectrum. By incorporating the NBHM film, the GH shift caused by a transversely magnetic incident-beam on the surface increases significantly compared with that on the uniaxial hyperbolic material. The maximum of GH shift can reach 86 λ0at about 841 cm-1when the thickness of NBHM is 90 nm, and the IF shift can approach 2.7 λ0for a circularly-polarized beam incident on a 1700-nm-thick NBHM. It is found that the spatialshift increases when a highly anisotropic hyperbolic polariton is excited in hyperbolic material, where the shift spectrum exhibits an oscillating behaviour accompanied with sharp shift peak(steep slope). This large spatial shift may provide an alternative strategy to develop novel sub-micrometric optical devices and biosensors.

关键词： Goos-Hanchen shift Imbert-Fedorov shift α-MoO_(3)

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A New Resonant Composite Probe for Near-field Scanning

A New Resonant Composite Probe for Near-field Scanning

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International Conference on Microwave and Millimeter Wave technology Proceedings

作者： Duan Nie Rui-Qi Wang Lei Wang School of Electronic Information and Artificial Intelligence Shaanxi University of Science and Technology Xi’an China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory CEPREI Guangzhou

In this article, a new wideband resonant probe with two orthogonal magnetic-field measurement features is proposed. The resonant magnetic-field probe consists of two orthogonal shorted sensing loops, two transmission lines with two outputs, a pair of LC resonant circuits, a shorted via, a connected via, and two rows of coaxial via fences. The LC resonant circuits including a pair of shorted stubs as additional inductor and open stubs as additional capacitor are used to excite resonant mode. The connected and shorted vias are used to form the orthogonal sensing loops. In order to verify the design rationality, the proposed probe is optimized, manufactured, and measured. The simulated results reveal the proposed probe could simultaneously test two orthogonal magnetic-field components at 1.575 GHz.

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Effect of Residual Stress After Reflow Soldering of Ball Grid Array Mixed Solder Joint on Thermal Cycling reliability

Effect of Residual Stress After Reflow Soldering of Ball Gri...

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International Conference on reliability, Maintainability and Safety,ICRMS

作者： Fangzhou Chen Jiahao Liu Jianyu Wu Hao Zhao Hui Xiao Tao Lu Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Guangzhou China Reliability Research and Analysis Center Ceprei Laboratory China Electronic Product Reliability and Environmental Testing Guangzhou China

ISBN: (数字)9798350329988

ISBN: (纸本)9798350329995

This study investigates the influence of residual stress after reflow soldering on the thermal cycling of a ball grid array (BGA). The devices were analyzed after thermal cycling using methods such as macroscopic morphology observation and microscopic structure evolution. The residual stress and strain of an Sn63Pb37/Sn3.0Ag0.5Cu mixed BGA structure were obtained by applying the reflow soldering temperature profile through finite element simulation. Subsequently, temperature cycling loads were applied to the BGA package model after reflow soldering. The thermal fatigue life of the BGA solder joints was predicted using the Darveaux fatigue model based on the strain energy damage. The results showed that considering the residual stress after reflow soldering in the simulation, the equivalent plastic strain was relatively large. The maximum stress was located at the corners where the solder joints contacted the PCB and chip. Microscopic cracks were formed on the interface at the chip-end in critical solder joints. The life prediction indicated that the relatively high residual stress generated during the reflow soldering process had negligible effect on the thermal fatigue performance of the hybrid BGA solder joints.

关键词： Semiconductor device modeling Fatigue Residual stresses Finite element analysis Thermal analysis reliability Plastics Thermal stresses Reflow soldering Strain

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