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Energy, Electrical and Power Engineering (CEEPE), International Conference on

作者： Qiushuang Li Xiangdong Li Zhizhe Wang Jun Luo Rui Deng Kaibin Chen Yongle Zhong Guangzhou Wide Bandgap Semiconductor Innovation Center Guangzhou Institute of Technology Xidian University Guangzhou China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China School of Materials Science and Engineering South China University of Technology

ISBN: (数字)9798350375794

ISBN: (纸本)9798350375800

Despite the extensive literatures on Silicon carbide (SiC) diodes, there was relatively little research dedicated to reliability. Therefore, the latest studies, focusing on the reliability test results and their failure mechanisms of SiC diode devices have been reviewed in this paper, including major tests closely related to practical operational conditions, such as the HTRB(High Temperature Reverse Bias), the PC(Power Cycling), the H 3 TRB(High Temperature and High Humidity Reverse Bias), the HV-H 3 TRB(High Voltage - High Temperature and High Humidity Reverse Bias) and so on. This paper provides a comprehensive summary, offering the guidance for future research and development for the continued improvement of diode performance.

关键词： Silicon carbide Thermal resistance Wires Failure analysis Humidity Voltage reliability engineering

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Research on simulation of Cu/SiO2 hybrid bonding process and interface failure mechanism by Finite Element Analysis

Research on simulation of Cu/SiO2 hybrid bonding process and...

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International Conference on (ICEPT) electronic Packaging technology

作者： Haozhong Wang Hongtao Chen Junshan Xiang Xiaofeng Yang Sauvage Laboratory for Smart Materials Harbin Institute of Technology (Shenzhen) Shenzhen China The Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China

Cu/SiO 2 hybrid bonding technology is proposed as a solution for the increasing demand of 3D packaging for higher I/O density and higher bandwidth applications. In this paper, a numerical approach to investigate the stress distribution of fine-pitch die-to-die hybrid bonding (D2D-HB) is proposed. The Finite Element Analysis (FEA) tool is used to build the model of the bonding process of D2D-HB. The influence of design parameters and conditions on the evolution of the stress on the Cu-Cu bonding interface and the dielectric layer interface during the bonding process is investigated. The results show that, the peak pressure on the Cu-Cu interface and the peak tensile force on the SiO 2 -SiO 2 interface can reach up to 85.26 MPa and 183.37 MPa during heating stage, respectively. During cooling stage, the pressure on the Cu-Cu interface changes into tensile force, and the tensile force on the SiO 2 -SiO 2 interface changes into pressure. In addition, the simulation results of the Cu-Cu bonding area are also displayed and discussed. For all the D2D-HB design studied in this research, up to 97.5% of Cu bonding area could be obtained. The simulation results will provide not only theoretical support for hybrid bonding technology.

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Superconducting and structural properties of the phosphorus-rich Nb_(2)P_(5) superconductor under high pressure

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Tungsten 2023年第3期5卷 364-369页

作者： Lei-Ming Chen Fang-Huang Wei Yan-Hong Chen Hang-Qi Liu Yang Xu Bo-Yu Chen Can-Li Dai Yu-Bo Zhang Zhen-Hai Yu School of Materials Science and Engineering Henan Key Laboratory of Aeronautic Materials and Application TechnologyZhengzhou University of AeronauticsZhengzhou 450046China Henan Key Laboratory of Aeronautical Material and Application Technology Zhengzhou University of AeronauticsZhengzhou 450046China Yongcheng City Vocational Education Center Shangqiu 476600China Kaixue Cold Chain Logistics Co. LtdZhengzhou 451450China Minjiang Collaborative Center for Theoretical Physics College of Physics and Electronic Information EngineeringMinjiang UniversityFuzhou 350108China School of Physical Science and Technology ShanghaiTech UniversityShanghai 201210China

Nb_(2)P_(5) is a recently discovered Bardeen,Cooper,Schrieffer theory s-wave superconductor hosting nontrivial topological nodal-line structure,which could serve as an excellent platform for studying the interplay between the superconductivity and nontrivial topological *** report herein the superconducting and structural properties of Nb2P5studied by measuring the electrical resistivity and structure under high pressure up to ~28 GPa and performing first principles *** superconducting transition temperature TCdecreases with applied pressure,and reaches a minimum of 1.9 K at ~20.0 GPa,followed by a continuous enhancement up to 50.0 GPa without ***,at pressures above ~8.2 GPa,it is likely that a second superconducting transition appears and coexists with the initial one even up to~28 *** calculations rule out the correlation between the second superconducting-like transition and ***,the Nb2P5showed remarkable axial anisotropic compressibility,in which the b-axis is more compressible than the a-and *** variation of TCis discussed via considering the evolution of density of states around the Fermi level and the phonon spectrum.

关键词： Phosphorus-rich superconductor Superconducting transition temperature High-pressure measurement First principles calculations

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reliability study of Through Glass Vias under high current density

Reliability study of Through Glass Vias under high current d...

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International Conference on (ICEPT) electronic Packaging technology

作者： Junshan Xiang Hongtao Chen Haozhong Wang Xiaofeng Yang Sauvage Laboratory for Smart Materials Harbin Institute of Technology (Shenzhen) Shenzhen China The Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China

Through glass vias (TGVs) interconnection technology based on glass interposer shows a great application prospect in RF devices, MEMS packaging and other fields due to its excellent high-frequency electrical characteristics, outstanding mechanical stability, and lower cost. Electromigration is one of the common failure modes in electronic components, so it is important to study the reliability of TGV interconnection structures under high current density. In this paper, the electromigration of an RDL-TGV has been investigated by finite element simulation and experiment. Simulation results show that RDL-TGV junction is the most vulnerable area for failure. The experimental results show that the electromigration voids are concentrated on the RDL side near the TGV-RDL junction. The growth mechanism of the electromigration voids in the RDL-TGV structure is summarized. The results of simulation and experiment can provide guidance for the study of electromigration reliability of TGV interconnection.

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A Comparative Study between Negative & Positive Bias Temperature Instability of Commercial nano-MOSFETs Using Voltage Step Stress Technique 5

A Comparative Study between Negative & Positive Bias Tempera...

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2022 5th International Conference on Power electronics and Control Engineering, ICPECE 2022

作者： Li, Zhigang Wei, Qinru Gao, Rui Lin, Xiaoling Huang, Yun School of Electronic Engineering and Automation Hefei University of Technology China Natl. Key Lab. of Sci. and Technology on Reliability Physics and Application of Electronic Component The Fifth Electronics Research Institute of the Ministry of Industry and Information Technology China

Bias temperature instability (BTI) has been one of the most common and also severe aging mechanisms in MOSFETs. In this work, a comparative study between NBTI and PBTI of commercial nano-MOSFETs has been conducted using the voltage step stress (VSS) technique, which is implemented by applying multiple constant voltage stress (CVS) continuously on a single device. Aging parameters are extracted for both NBTI and PBTI from a single device using the VSS technique, and the lifetime under room temperature is predicted. This work is of potential use for BTI investigation of commercial nano-MOSFETs in terms of both test efficiency and affordability. © Published under licence by IOP Publishing Ltd.

关键词： Negative bias temperature instability

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Sub-Safety Recognition and reliability Evaluation for Motor Drive System in High Speed Trains 31st

Sub-Safety Recognition and Reliability Evaluation for Motor ...

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31st European Safety and reliability Conference, ESREL 2021

作者： Meng, Linghui Zhou, Zhenwei He, Shilie China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou Guangdong511370 China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou Guangdong511370 China

ISBN: (纸本)9789811820168

The concept of sub-safety for high-speed trains is put forward for the first time. As trains run for a long time, train systems constantly age and degrade and enter a state of sub-safety. It is important to recognize the sub-safety state in a timely manner in order to implement safety control measures to prevent the system from entering a faulty state. Firstly, this paper analyzed the main faults of the devices in a high-speed train’s motor-drive system and their failure mechanisms. Secondly, a sub-health state was proposed for the main devices of the system. Then a degradation and state transition model for the devices was established based on the Markov theory. Finally, using the reliability model for the system, the reliability was evaluated and the sub-safety state was determined. © ESREL 2021. Published by Research Publishing, Singapore.

关键词： Railroads

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reliability analysis of k-out-of-n system with load-sharing and failure propagation effect

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Journal of Systems Engineering and electronics 2021年第5期32卷 1221-1231页

作者： CHEN Ying MA Qichao WANG Ze LI Yingyi Science and Technology on Reliability and Environmental Engineering Laboratory Beihang UniversityBeijing 100191China Institute of Electronic Engineering China Academy of Engineering PhysicsMianyang 621999China

In complex systems,functional dependency and physical dependency may have a coupling *** this paper,the reliability of a k-out-of-n system is analyzed considering load-sharing effect and failure mechanism(FM)*** types of FMs are considered and an accumulative damage model is proposed to illustrate the system behavior of the k-out-of-n system and the coupling effect between load-sharing effect and FM propagation effect.A combinational algorithm based on Binary decision diagram(BDD)and Monte-Carlo simulation is presented to evaluate the complex system behavior and reliability of the k-out-of-n system.A current stabilizing system that consists of a 3-out-of-6 subsystem with FM propagation effect is presented as a case to illustrate the complex behavior and to verify the applicability of the proposed *** to the coupling effect change,the main mechanism and failure mode will be changed,and the system lifetime is *** are analyzed and results show that different sensitivity factors of three different FMs lead to the change of the development rate,thus changing the failure *** the coupling effect may lead to an incomplete and ineffective measuring and monitoring *** strategies must be adopted to make the FM propagation insensitive to load-sharing effect.

关键词： k-out-of-n system load-sharing effect failure mechanism propagation damage factor model combinational algorithm

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An Efficient Aged Timing Analysis Method for Digital Integrated Circuit Under NBTI Effect

An Efficient Aged Timing Analysis Method for Digital Integra...

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electronics Design Automation (ISEDA), International Symposium of

作者： Yang Zhang Zhengguang Tang Yawei Jin Hong Zhang Yongsheng Sun Chen Chen Xiaoling Lin Cong Li Hailong You School of Microelectronic Xidian University Xi'an China HiSilicon Technologies Co. Ltd Shenzhen China The Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou Guangdong Province China

ISBN: (数字)9798350352030

ISBN: (纸本)9798350352047

With the continuous development of semiconductor technology, the performance and integration of integrated circuits (ICs) have been continuously improved[1]. However, below the 65nm technology node, one of the aging effects of chips, the Negative Bias Temperature Instability (NBTI) effect, has become an important factor affecting the performance and reliability of digital integrated circuits[2]. This paper proposes an efficient aged timing analysis method for digital integrated circuit under NBTI effect. The method characterizes standard-cell aged library under a small number of typical input signal probability. Based on the established standard-cell aged library, timing model for perceiving NBTI aging is constructed through machine learning regression. The timing model established in this paper includes the mapping relationship between aged-related parameters and corresponding aged timing, with the input signal probability, input signal transition time, and output load capacitance of the cell as inputs, and the delay or output transition time of the cell as output. Based on the established timing model for perceiving NBTI effect, timing analysis of each cell in digital integrated circuits can be performed after degradation. Experimental results indicate that compared to existing methods, the approach presented in this paper reduces aged library usage by approximately 70% while only introducing small timing analysis error.

关键词： Negative bias temperature instability Thermal variables control Digital integrated circuits Machine learning Aging Predictive models Libraries

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Templated synthesis of patterned gold nanoparticle assemblies for highly sensitive and reliable SERS substrates

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Nano Research 2023年第4期16卷 5056-5064页

作者： Jianping Peng Peijiang Liu Yutong Chen Zi-Hao Guo Yanhui Liu Kan Yue South China Advanced Institute for Soft Matter Science and Technology School of Emergent Soft MatterSouth China University of TechnologyGuangzhou 510640China National Key Laboratory for Reliability Physics and Its Application Technology of Electrical Component the 5th Electronics Research Institute of the Ministry of Information IndustryGuangzhou 510610China College of Textiles&Clothing Laboratory of New Fiber Materials and Modern TextileState Key laboratory of Bio-Fibers and Eco-TextilesQingdao UniversityQingdao 266000China

Formation of plasmonic structure in closely packed assemblies of metallic nanoparticles(NPs)is essential for various applications in sensing,renewable energy,authentication,catalysis,and ***,a surface-enhanced Raman scattering(SERS)substrate is fabricated for trace detection with ultrahigh sensitivity and *** SERS substrate is constructed from a simple yet robust strategy through in situ growth patterned assemblies of Au NPs based on a polymer brush templated synthesis *** from the dense and uniform distribution of Au NPs,the resulting Au plasmonic nanostructure demonstrates a very strong SERS effect,while the outer polymer brush could restrict the excessive growth of Au NPs and the patterned design could achieve uniform distribution of Au *** results,an ultra-low limit of detection(LOD)of 10^(−15)M,which has never been successfully detected in other work,is determined for 4-acetamidothiophenol(4-AMTP)molecules and the Raman signals in the random region show good signal homogeneity with a low relative standard deviation(RSD)of 7.2%,indicating great sensitivity and reliability as a SERS *** LOD values of such Au plasmonic nanostructures for methylene blue,thiram,and R6G molecules can also reach as low as 10^(−10)M,further indicating that the substrate has a wide range of applicability for SERS *** the help of finite difference time domain simulations(FDTD)calculation,the electric field distribution of the Au plasmonic nanostructures is simulated,which quantitatively matches the experimental ***,the Au plasmonic nanostructures show good shelf stability for at least 10 months of storage in an ambient environment,indicating potentials for practical applications.

关键词： templated synthesis patterned Au nanostructures surface-enhanced Raman scattering polymer brush plasmonic nanostructures

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On Latent Defect Acceleration

On Latent Defect Acceleration

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electronics Design Automation (ISEDA), International Symposium of

作者： Yawei Jin Yang Zhang Hong Zhang Chen Chen Xiaoling Lin Yongsheng Sun Yu Huang Cong Li Hailong You School of Microelectronic Xidian University Xi'an China HiSilicon Technologies Co. Ltd Shenzhen China The Science and Technology on Reliability Physics and Application of Electronic Component Laborator China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou Guangdong Province China

ISBN: (数字)9798350352030

ISBN: (纸本)9798350352047

With the widespread application of chips in mission-critical and safety-critical fields, ensuring that chips do not fail during operation has become crucial. However, the increasing number of hard-to-detect latent defects within chips is one of the main factors affecting the quality and reliability of the chip. In this paper, we propose a method to generate latent defect acceleration patterns based on path critical defect locations. When the latent defect appears in different defect locations of the path, the delay of the path will be affected differently. In the proposed method, defect criticality is used to measure the impact of latent defects at different locations on path delay. Critical latent defect locations of the path are selected based on the value of defect criticality. Then the user-defined-faultmodel (UDFM) is used to generate the latent defect acceleration pattern with the goal of maximizing the electrical activity of the critical latent defect location in the path. Experimental results show that the patterns generated using our method achieves an average of 34.9% increase in current through path critical latent defect locations compared to transition patterns.

关键词： Semiconductor device measurement Design automation Mission critical systems reliability engineering Silicon Delays

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