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International Conference on reliability, Maintainability and Safety,ICRMS

作者： Ziyang Li Kun Zhang Gang Zhu Hao Zhao Yingjie Zhang Lixian Sun Reliability Research and Analysis Center China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China Guangxi Key Laboratory of Information Materials Guilin University of Electronic Technology Guilin China

ISBN: (数字)9798350329988

ISBN: (纸本)9798350329995

Beryllium bronze conductive elastic materials are widely used in aerospace electronics, and the reliability of this material is critical for aircraft equipment. A batch of conductive springs suffered from fracture failure during assembly. The fractography, chemical composition, microstructure, and microhardness of the spring were investigated, and the causes of fracture and improvement measures were discussed. The fractographs of the spring show an intergranular fracture accompanied with a dimple fracture. The chemical composition of the raw material conforms to the technical requirements. The sizes of the precipitates in the failed spring were primarily 1–2 μm, while the size of the precipitates in the un-failed spring were less than 0.5 μm. The grain boundary of the failed spring was wider, with larger particle phases distributed at the grain boundaries. Additionally, the average hardness of the fracture spring was 394.4 HV, which exceeds the technical requirements. The hardness of the un-failed spring met the requirements. According to the results of microstructure and hardness, improper aging treatment led to material embrittlement, and the spring suffered an intergranular fracture during assembly.

关键词： Grain boundaries Technical requirements Temperature Beryllium Aging Aerospace electronics Microstructure Springs Chemicals Assembly

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Modulating perovskite crystallization and band alignment using coplanar molecules for high-performance indoor photovoltaics

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Journal of Energy Chemistry 2024年第11期98卷 383-390页

作者： Qu Yang Shuhan Fan Haozhe Zhang Zhenhuang Su Xingyu Gao Hui Shen Mingkui Wang Xiu Gong College of Physics &Guizhou Province Key Laboratory for Photoelectrics Technology and ApplicationGuizhou UniversityGuiyang 550025GuizhouChina State Key Laboratory of Public Big Data Guizhou UniversityGuiyang 550025GuizhouChina Shanghai Synchrotron Radiation Facility(SSRF) Shanghai Advanced Research InstituteChinese Academy of SciencesShanghai 201204China Wuhan National Laboratory for Optoelectronics School of Optical and Electronic InformationHuazhong University of Science and TechnologyWuhan 430074HubeiChina

The proper bandgap and exceptional photostability enable CsPbI_(3) as a potential candidate for indoor photovoltaics(IPVs),but indoor power conversion efficiency(PCE) is impeded by serious nonradiative recombination stemming from challenges in incomplete DMAPbI_(3) conversion and lattice structure ***,the coplanar symmetric structu re of hexyl sulfide(HS) is employed to functionalize the CsPbI_(3) layer for fabricating highly efficient *** hydrogen bond between HS and DMAI promotes the conversion of DMAPbI_(3) to CsPbI_(3),while the copianar symmetric structure enhances crystalline ***,surface sulfidation during HS-induced growth results in the in situ formation of PbS,spontaneously creating a CsPbI_(3) N-P homojunction to enhance band alignment and carrier *** a result,the CsPbI_(3)&HS devices achieve an impressive indoor PCE of 39.90%(P_(in):334.6 μW cm^(-2),P_(out):133.5 μW cm^(-2)) under LED@2968 K,1062 lux,and maintain over 90% initial PCE for 800 h at ^(3)0% air ambient humidity.

关键词： Perovskite indoor photovoltaics CsPbI_(3) Coplanar symmetric structure molecules Crystallization kinetics Hydrogen bond N-P homojunction

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electronic structure of cuprate-nickelate infinite-layer heterostructure

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Chinese physics B 2023年第8期32卷 391-396页

作者：陈大川 Paul Worm 司良张春小邓凤麟蒋沛恒钟志诚 CAS Key Laboratory of Magnetic Materials and Devices&Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology Ningbo Institute of Materials Technology and EngineeringChinese Academy of SciencesNingbo 315201China College of Materials Science and Opto-Electronic Technology University of Chinese Academy of SciencesBeijing 100049China Institut für Festkörperphysik TU WienVienna 1040Austria School of Physics Northwest UniversityXi'an 710127China School of Physics and Optoelectronic Engineering Shandong University of TechnologyShandong 250049China

The discovery of superconductivity in Sr/Ca-doped infinite-layer nickelates Nd(La)NiO_(2)thin films inspired extensive experimental and theoretical ***,research on the possibilities of enhanced critical temperature by interface heterostructure is still *** to the similarities of the crystal structure and band structure of infinite-layer nickelate La NiO_(2)and cuprate CaCuO_(2),we investigate the crystal,electronic and magnetic properties of La NiO_(2):CaCuO_(2)heterostructure using density functional theory and dynamical mean-field *** theoretical results demonstrate that,even a very weak inter-layer z-direction bond is formed,an intrinsic charge transfer between Cu-3d_(x^(2)-y^(2))and Ni-3d_((x^(2)-y^(2)))orbitals is *** weak interlayer hopping between Cu and Ni leaves a parallel band contributed by Ni/Cu-3d_((x^(2)-y^(2)))orbitals near the Fermi *** an infinite-layer heterostructure with negligible interlayer interaction and robust charge transfer opens a new way for interface engineering and nickelate superconductors.

关键词： nickelate superconductor infinite-layer oxide perovskite heterostructure

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New Diagnostics for Inferring Multiple Fault Scenarios and Accurate Fault Localization

New Diagnostics for Inferring Multiple Fault Scenarios and A...

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IEEE Conference on Global Communications (GLOBECOM)

作者： Huisi Zhou Wei Hu Dan Zhu Liwei Wang School of Cybersecurity Northwestern Polytechnical University Xi’an China Research & Development Institute of Northwestern Polytechnical University in Shenzhen China Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory Guangzhou China

ISBN: (数字)9798350351255

ISBN: (纸本)9798350351262

For many high-tech fields such as mobile communication systems, network management, and satellite and space applications, it is vital to discover faulty components of manufactured devices in a timely manner to ensure safety. Model-based diagnosis is a crucial element in fault diagnosis. It aims to find the possible causes of the observed unexpected behaviors of a system when assuming all of its components work correctly. In this paper, we propose two diagnostics, namely, the Improved Model-Based Diagnosis (IMBD) and the Localization-Based Diagnosis (LBD), to address the research challenge that massive candidate diagnoses are needed in the traditional model-based diagnosis approach for repairing the faulty system. Our diagnostics realizes a simulator to simulate the single-fault scenarios, through which we can reason about the scenarios where multiple faults occur and find which components are more likely to fail in the multiple-fault system. Experiments using the ISCAS-85 benchmarks indicate that LBD is superior to IMBD and SAT-based approaches for accurate fault localization.

关键词： Fault diagnosis Location awareness Accuracy Satellites Benchmark testing Cognition Safety Global communication

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The Effect of Pore Defects on the Interfacial Thermal Resistance of GaN-Diamond Heterostructure

The Effect of Pore Defects on the Interfacial Thermal Resist...

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International Conference on (ICEPT) electronic Packaging technology

作者： Chao Yang Pengfei Zhao Jian Wang Dezhi Ma Zhiyuan He Zhiwei Fu Jia-Yue Yang School of Energy and Power Engineering Shandong University Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Jinan China School of Microelectronics Faculty of Electronic and Information Engineering Xi'an Jiaotong University Xi'an China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China School of Energy and Power Engineering Shandong University Science and Technology on Reliability Physics and Application of Electronic Component Laboratory CEPREI Guangzhou China School of Energy and Power Engineering Shandong University Optics & Thermal Radiation Research Center Institute of Frontier and Interdisciplinary Science Shandong University Jinan China

Heat transfer across the GaN-diamond interface is very important in the thermal management of GaN electronics on diamond substrates. The influence of various defects caused by manufacturing processes on the thermal resistance of the GaN-diamond interface is still unclear. In this work, we use non-equilibrium molecular dynamics simulations to investigate the effect of possible pore defects on GaN-diamond interfacial heat transport. Square pores of different sizes are introduced at the GaN-diamond interface. By changing the pore cross-sectional area, we found that the introduction of pore defects will significantly increase the interfacial thermal resistance compared with the case without defects. Pores can also cause more significant stress and strain on the edge atoms at the interface and may hinder the normal transmission of phonons. At the same time, we calculated the phonon density of states (PDOS) corresponding to different pore sizes to analyze the reason for the change in interfacial thermal resistance. PDOS calculation results show that the higher porosity leads to the enhancement of phonon scattering at the interface. The low-frequency phonons that are more easily transmitted through the interface are scattered into high-frequency phonons, increasing the thermal resistance of the interface.

关键词：

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A novel thermal interface materials based on porous metal copper filled tin for die attachment in power device packaging

A novel thermal interface materials based on porous metal co...

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International Conference on (ICEPT) electronic Packaging technology

作者： Jiahao Liu Lu Han Xiangxiang Zhong He Diao Fengyi Wang Fangzhou Chen Zhaoning Sun Hongtao Chen Hao Zhao Science and Technology on Reliability Physics and Application of Electronic Component Laborator China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China Materials and Component R&D Center Chongqing CEPREI Industrial China Electronic Product Reliability Technology Research Institute Co. Ltd Chongqing China Department of integrated circuitr Harbin Institute of TechnologyShenzhen Shenzhen China

ISBN: (数字)9798350353808

ISBN: (纸本)9798350353815

As electronic devices continue to develop towards higher integration and miniaturization, the power density also increases, which in turn leads to a significant rise in the amount of heat generated by the devices. Therefore, efficiently dissipating more heat and maintaining the system at lower temperature levels has become a bottleneck issue for power devices. Porous copper, with its advantages of high thermal conductivity, high specific heat capacity, and low manufacturing costs, has a wide range of potential applications for power device packaging. Nevertheless, existing reports have primarily concentrated on the preparation of porous metal copper materials, lacking research on their interconnection techniques and long-term reliability. This paper used orthogonal experiments to study the effect of metal porous copper filled tin. Under the optimal process parameters (250 °C, 8 MPa, 10 min), the shear strength of the interconnection structure is 36.3 MPa. After 500 h of high-temperature storage, the shear strength of the interconnect structure reached 44.3 MPa, whichwas 122 % of the initial shear strength. In addition, the thermal conductivity of the interconnect structure after 500 hours of high-temperature storage was 206.7 W·m −1 K −1 , which was 71.3% of the initial thermal conductivity. In other words, during long-term service, the mechanical and thermal properties of porous copper were excellent, making it suitable for interconnects in power devices.

关键词： Heating systems Temperature Conductivity Packaging Tin electronic packaging thermal management Thermal conductivity

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Delay-Beat Differential Phase Demodulation for Laser Phase Noise Immunity in Phase-Sensitive OTDR

Delay-Beat Differential Phase Demodulation for Laser Phase N...

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2023 Asia Communications and Photonics Conference/2023 International Photonics and Optoelectronics Meetings, ACP/POEM 2023

作者： Qian, Heng Li, Chuan Li, Chengli Kunming University of Science and Technology Yunnan Key Laboratory of Computer Technologies Application Faculty of Information Engineering and Automation Kunming China School of Physics and Electronic Information Yunnan Normal University Yunnan Key Laboratory of Opo-electronic Information Technology Kunming China

ISBN: (纸本)9798350312614

A phase demodulation method immune to laser phase noise based on time-delay beat-frequency coherent Φ-OTDR is proposed. In this method, the two Rayleigh backscattered light beams with time delay are beat with local light beams respectively, and the phase difference of the two beat signals is used instead of the traditional distance-difference phase to obtain the local disturbance information. In this way, the impact of laser phase noise introduce by the distance-difference phase is avoid, and the constraint of laser linewidth on phase demodulation performance is weakened. In the experiment, a demodulation accuracy of -63.5dB rad2/Hz is achieved under the condition of a laser with a linewidth of 100kHz, which is improve by 11dB compared to traditional phase demodulation method. © 2023 IEEE.

关键词： distributed optical fiber sensing laser phase noise phase demodulation phase-sensitive optical time-domain reflectometry

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Enhanced Piezoelectric and Pyroelectric Response in P(Vdf-Trfe) Based Sensor Via X-Ray Irradiation

SSRN

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SSRN 2023年

作者： Yang, Bin Zhang, Hong Wang, Qianjin Li, Bo Liu, Weishu College of Physics and Electronic Information Yunnan Normal University Yunnan Kunming650500 China Department of Materials Science and Engineering Southern University of Science and Technology Guangdong Shenzhen518055 China The Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou510610 China

Given the inherent limitations of sensing technologies, this study aimed to investigate the transformative effect of high-energy X-rays on the enhancement of piezoelectric and pyroelectric properties of poly(vinylidene fluoride-co-trifluoroethylene) (P(VDF-TrFE), 70/30%) films. Our investigation showed a remarkable improvement in the pyroelectric and piezoelectric responses in the P(VDF-TrFE) films after irradiation. When irradiated with 1 Mrad X-rays, the P(VDF-TrFE) films exhibit a pyroelectric coefficient of 252 μC m-2 K-1, which is three times higher than that of non-irradiated films, and the piezoelectric coefficient increased to 33 pC N-1. The sensitivity to temperature changes was measured to be 15.66 V K-1 from 0.05 K to 5 K, respectively. In addition, the pressure sensitivity in the range from 0.025 to 10 kPa and 10 to 50 kPa were determined to be 3.62 V kPa-1 and 0.63 V kPa-1. This considerable increase in performance is primarily due to a significant improvement in crystallinity, which increased from 45% to 80%. Consequently, our results strongly suggest that the application of X-rays to P(VDF-TrFE) films is a reliable and effective method to improve both pyroelectric and piezoelectric responses. © 2023, The Authors. All rights reserved.

关键词： Irradiation

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Review of HTRB and HTGB reliability of SiC MOSFETs

Review of HTRB and HTGB Reliability of SiC MOSFETs

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Energy, Electrical and Power Engineering (CEEPE), International Conference on

作者： Yongle Zhong Xinhua He Zhizhe Wang Jun Luo Bin Wang Qiushuang Li School of Materials Science and Engineering South China University of Technology Guangzhou China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China Electronic Component Inspection and Testing Center China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China Guangzhou Wide Bandgap Semiconductor Innovation Center Guangzhou Institute of Technology Xidian University Guangzhou China

ISBN: (数字)9798350375794

ISBN: (纸本)9798350375800

A comprehensive review of High-Temperature Gate Bias (HTGB) and High-Temperature Reverse Bias (HTRB) reliability in Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistors (SiC MOSFETs) was made in this paper. Despite the considerable potential of high power, high voltage, high frequency, and radiation resistance for SiC MOSFETs, the challenge in long-term reliability has limited the application in high-frequency and high-temperature fields. As an effective method to assess long-term reliability of SiC MOSFETs, HTGB and HTRB testing have been widely applied for commercial SiC MOSFETs. The research on the reliability of SiC MOSFETs under HTGB and HTRB has been comprehensively reviewed in this paper, with a focus on the test conditions, deterioration laws of key parameters, and failure mechanisms. This review may serve as a valuable reference for subsequent research on SiC MOSFETs.

关键词： Resistance MOSFET Silicon carbide Reviews Failure analysis High-voltage techniques Logic gates

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Comparative analysis of Degradation of SiC MOSFET Power Module with Different Proportions of Al/Cu Buffer under Power Cycling

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IEEE Transactions on Components, Packaging and Manufacturing technology 2025年

作者： Mei, Yunhui Zhang, Songmao Chen, Yuan Li, Longnv Li, Daohang Pei, Yongqi Wang, Lu Tiangong University School of Electrical Engineering Tianjin Key Laboratory of Intelligent Control of Electrical Equipment Tianjin300387 China China Electronic Product Reliability and Environmental Testing Research Institute National Key Laboratory of Science and Technology on Reliability Physics and Application of Electronic Component Guangzhou511370 China Tiangong University School of Electrical Engineering Tianjin300387 China

Due to the mismatch in thermal expansion coefficient (CTE) between the SiC chip and the bonding wire, there is a sever thermal-mechanical stress at the bonding interface, causing a significant reduction in the reliability of the bonding wire. By using sintered silver to connect an Al/Cu buffer layer at the top of the chip, the mismatch in CTE between the bonding wire and the chip can be improved, greatly enhancing the reliability of the bonding wire. The integration of the buffer layer with Ag sintering technology significantly improves the reliability of power modules and enhances power density. Furthermore, the buffer layer increases the thermal capacity, thereby reducing the operating temperature of the semiconductor device. In this study, the effects of different Al/Cu stress buffer layers with different proportions on the reliability of the single-sided molded SiC power module with Al bonding wire were investigated through sub-second power cycling tests, and the failure modes of the bonding wire were characterized. The results show that the failure point of the bonding wire in the module with an Al/Cu stress buffer layer is located at the cracking of the bonding wire heel. Among the 10μm-Al/40μm-Cu buffer layers with good electrical conductivity, the module with this buffer layer has a longer lifetime. © 2025 IEEE. All rights reserved.

关键词： Sintering

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