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International Conference on (ICEPT) electronic Packaging technology

作者： Jide Zhang Wenyuan Liao Shaohua Yang Guoguang Lu Xiaohua Wang Zhipeng Wei College of Physics Changchun University of Science and Technology Changchun China College of Physics & Electronic Information Baicheng Normal University Baicheng China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory The Fifth Electronic Research Institute of the Ministry of Industry and Information Technology Guangzhou China Zhongshan Institute Changchun University of Science and Technology Zhongshan China

With the development of nuclear engineering and aerospace industry, the requirement for reliability of optical communication systems under a radiation environment is more and more strict. To explore the reliability of vertical-cavity surface-emitting lasers (VCSELs) in radiation environment, the photoelectric performances and lifetime of 850 nm high-speed VCSELs under X-rays irradiation are investigated. The results show that the gradual degradation of the photoelectric properties of VCSEL is caused by ionization damage. The performances of VCSEL are slightly improved under a certain dose, and the phenomenon can be explained as the radiation-induced ordering effect in crystals. Deposited energy can promote the ordering of crystals near the quantum well interface so as to compensate or even overcome the influence of ionization damage. The results of a high current accelerated life test show that the lifetime of VCSELs at the operating current is shortened with the increase in the total irradiation dose. These results provide support for the application of VCSEL and the data communication and instrument system containing VCSEL in harsh space radiation environments.

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Modeling and Backstepping Control for Inductance-Capacitance Second-Order Low-Pass Filtering

Modeling and Backstepping Control for Inductance-Capacitance...

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International Conference on Sensing, Diagnostics, Prognostics, and Control (SDPC)

作者： Hanguang Jia Yaqiong Ding National Key Laboratory of Science and Technology on Reliability Physics and Application of Electronic Component The Fifth Electronics Research Institute of the Ministry of Industry and Information Technology) South China University of Technology Guangzhou China School of Information Science and Technology Sun Yat Sen university Guangzhou China

ISBN: (数字)9798350388855

ISBN: (纸本)9798350388862

In signal processing, the choice of circuit parameters determines the correctness and quality of signal processing, so it is of great importance to model the signal. Firstly, the relationship between input and output signals of inductance-capacitance second-order low-pass filtering system is modeled. Then, the strict-feedback form of inductance-capacitance(LC) second-order low-pass filtering system signal is obtained. Based on the strict-feedback form of a second-order low-pass filtering system with inductance-capacitance, the backstepping method is employed to design both the virtual controller and the actual controller. Moreover, analyses of the convergence property are implemented. Subsequently, simulative tests are carried out on two different scenarios to validate the effectiveness of the backstepping controller. These simulation results effectively demonstrate the feasibility and effectiveness of the designed controllers.

关键词： Backstepping Filtering Simulation Signal processing Control systems Sensors Integrated circuit modeling Voltage control Convergence

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Proton Irradiation Induced Single-Event Burnout Effect in P-Gan Power Devices

SSRN

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SSRN 2024年

作者： Bai, Ru Xue Guo, Hong Xia Zhang, Hong Zhang, Feng Qi Ma, Wu Ying Ouyang, Xiao Ping Zhong, Xiang Li The School of Materials Science and Engineering Xiangtan University Xiangtan411105 China Northwest Institute of Nuclear Technology Xi’an710024 China The Science and Technology on Reliability Physics and Application of Electronic Component Laboratory CEPREI Guangzhou510610 China Zhejiang University China

The microphysical mechanism of proton-induced single-event burnout (SEB) effect in P-GaN power devices was investigated by experiments and simulations. The experiment results show that when the proton energy is 100 MeV, the proton flence reaches 1.38×1011 p·cm-2, and the bias voltage is 600 V, the device will burnout. The transport and deposition processes of particles in the failure event were simulated by Monte Carlo and TACD methods. The simulation results show that the nuclear reaction of protons with the material of the device leads to the generation of many electron-hole pairs. Under the action of the electric field, electrons are rapidly collected at the drain electrode, and holes accumulate under the gate. The accumulation of charge under the gate lowers the potential barrier, producing the bipolar effect and the back-channel effect. These two effects drive more electrons toward the drain, which leads to a large current breakdown in the drain. Notably, the additional electric field significantly impacts the SEB generation. © 2024, The Authors. All rights reserved.

关键词： Monte Carlo methods

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Enhanced Inverter Hybrid Fault Diagnosis Through RAM and CNN Integration

Enhanced Inverter Hybrid Fault Diagnosis Through RAM and CNN...

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International Conference on reliability, Maintainability and Safety,ICRMS

作者： Linghui Meng Lin Li Yuanyuan Jiang Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou Guangdong China Anhui University of Science and Technology School of Institute of Artificial Intelligence Huainan Anhui China Anhui University of Science and Technology School of electrical and Information Engineering Huainan Anhui China

ISBN: (数字)9798350329988

ISBN: (纸本)9798350329995

Deep learning has been widely used in inverter open-circuit fault diagnosis; however, traditional neural networks only extract signal features of inverter faults without distinguishing between significant and minor features. To address this limitation, this paper proposes a diagnostic method for inverter hybrid faults that combine reverse attention mechanism (RAM) and convolutional neural networks. The proposed method highlights important features by utilizing RAM to reverse the attention and prune the minor features. In addition, long short-term memory is used to learn temporal information between the features. Finally, fault classification is performed using fully connected layers. Simulation experiments indicate that the proposed diagnostic method significantly improves fault diagnosis accuracy. Compared to traditional neural network fault diagnosis methods, our proposed method achieves up to 8.07% higher diagnosis accuracy, thereby validating its effectiveness.

关键词： Fault diagnosis Deep learning Accuracy Neural networks Random access memory Feature extraction Inverters Safety Convolutional neural networks Long short term memory

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Analysis of Power Cycle Aging Test for SiC MOSFET

Analysis of Power Cycle Aging Test for SiC MOSFET

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Prognostics and System Health Management Conference (PHM-Qingdao)

作者： Zhouyou Zheng Linghui Meng Xin Li Bin Ruan Haotian Cui School of Electrical and Information Engineering Anhui University of Science and Technology Huainan Anhui China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guang zhou Guang dong China School of Information Engineering Southwest University of Science and Technology Mianyang China

Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) are gradually replacing silicon (Si)-based devices as the core devices for power conversion in high-temperature, high-pressure, and high-frequency applications due to their superior material properties. The long-term reliability of SiC MOSFETs has become a research focus. Power cycling tests, an important aging test for evaluating device reliability, can reflect the reliability under real working conditions to some extent. The test is conducted using a constant on/off time mode, and the on-state resistance and body diode voltage drop of the devices are measured online during the aging test. The experimental results show that an increase in on-state resistance during power cycling tests causes an increase in junction temperature, which leads to wire bond aging and eventually results in SiC MOSFET failure.

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Design, Fabrication and Experimental Study Lab on a Chip by Screen Printing for Depressive Substance Analysis 4

Design, Fabrication and Experimental Study Lab on a Chip by ...

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4th Research, Invention, and Innovation Congress: Innovative Electricals and electronics, RI2C 2023

作者： Boonsiri, Warisara Ugsornrat, Kessararat Kamsong, Wichayaporn Pasakon, Patiya Karuwan, Chanpen Tuantranont, Adisorn Department of Industrial Physics and Medical Instrumentation King Mongkut’s university of Technology North Bangkok Bangkok Thailand Graphene and Printed Electronic for Dual-use Application Research Division National Science and Technology Development Agency Pathumtani Thailand

ISBN: (纸本)9798350330618

In this research study about lab on a chip with single plate plastic substrate for depressive substance analysis. The lab on chip was designed into two parts which are T-junction electrowetting on dielectric (EWOD) and electrochemical sensor. Both parts were fabricated with screen printing methods. EWOD device was designed to transport very small amounts of analyte droplets. For fabrication, T-junction EWOD was coated using screen printed silver as electrode and spin coated polydimethylsiloxane (PDMS) as dielectric layer in a T-junction layout. The electrochemical sensor was fabricated at the end of T-junction for analysis. Three detectors consist of a screen-printing electrode which are carbon working and counter electrodes, and a silver/silver chloride reference electrode. For analysis, lab on a chip tested performance of electrochemical sensor with cyclic voltammetry for serotonin and norepinephrine. The results revealed that possibility of the microchip can be used to analyze substances related to depression. ©2023 IEEE.

关键词： Chlorine compounds

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Fault Injection of Strong Magnetic Pulse in Digital Integrated Circuit 3

Fault Injection of Strong Magnetic Pulse in Digital Integrat...

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3rd IEEE International Conference on Communications, Information System and Computer Engineering, CISCE 2021

作者： Liu, Xiaodong Liu, Yi Weng, Xiaodong Lin, Xiaoling Yang, Yintang School of Microelectronics Xidian University Xi'an China Key Laboratory of Reliability Physics and Application Technology for Electronic Components Guangzhou China

ISBN: (纸本)9780738112152

As the electromagnetic environment of electronic equipment becomes more complex and the chip area increases, the research of integrated circuit electromagnetic compatibility (EMC) technology is taken seriously. The development of new technologies represented by electromagnetic pulse weapons, electromagnetic artillery, and high-power wireless charging technologies for mobile phones has made the integrated circuit as the control core face the challenge of complex and harsh electromagnetic interference (EMI). Based on the strong magnetic pulse (SMP) environment generated by the electromagnetic artillery, this paper analyzes the interference mechanism of the SMP to the digital integrated circuit, and conducts the simulation experiment of the SMP fault injection in the SPICE simulation software. © 2021 IEEE.

关键词： Timing circuits

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Metal-Organic Frameworks Offering Tunable Binary Active Sites toward HighlyEfficient Urea Oxidation Electrolysis

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Research 2022年第4期2022卷 309-320页

作者： Xuefei Xu Qingming Deng Hsiao-Chien Chen Muhammad Humayun Delong Duan Xia Zhang Huachuan Sun Xiang Ao Xinying Xue Anton Nikiforov Kaifu Huo Chundong Wang Yujie Xiong School of Optical and Electronic Information Wuhan National Laboratory for OptoelectronicsOptics Valley LaboratoryHuazhong University of Science and TechnologyWuhan 430074China Physics Department and Jiangsu Key Laboratory for Chemistry of Low-Dimensional Materials Huaiyin Normal UniversityHuaian 223300China Center for Reliability Science and Technologies Chang Gung UniversityTaoyuan33302 TaiwanChina School of Chemistry and Materials Science University of Science and Technology of ChinaHefei230026 AnhuiChina Department of Physics College of ScienceShihezi UniversityXinjang 832003China Department of Applied Physics Ghent UniversityGent 9000Belgium

Electrocatalytic urea oxidation reaction(UOR)is regarded as an effective yet challenging approach for the degradation of urea in wastewater into harmless N2 and CO_(2).To overcome the sluggish kinetics,catalytically active sites should be rationally designed to maneuver the multiple key steps of intermediate adsorption and ***,we demonstrate that metal-organic frameworks(MOFs)can provide an ideal platform for tailoring binary active sites to facilitate the rate-determining steps,achieving remarkable electrocatalytic activity toward ***,the MOF(namely,NiMn_(0.14)-BDC)based on Ni/Mn sites and terephthalic acid(BDC)ligands exhibits a low voltage of 1.317 V to deliver a current density of 10 mA cm^(-2).As a result,a high turnover frequency(TOF)of 0.15 s^(-1) is achieved at a voltage of 1.4 V,which enables a urea degradation rate of 81.87%in 0.33 M urea *** combination of experimental characterization with theoretical calculation reveals that the Ni and Mn sites play synergistic roles in maneuvering the evolution of urea molecules and key reaction intermediates during the UOR,while the binary Ni/Mn sites in MOF offer the tunability for electronic structure and d-band center impacting on the intermediate *** work provides important insights into active site design by leveraging MOF platform and represents a solid step toward highly efficient UOR with MOF-based electrocatalysts.

关键词： solution steps Highly

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Effect mechanism analysis of low-temperature on short-circuit robustness of SiC MOSFETs

Effect mechanism analysis of low-temperature on short-circui...

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IEEE Conference on Industrial electronics and applications (ICIEA)

作者： Pengkai Wang Yuan Chen Xinyu Zhu Hu He Junhui Li State Key Laboratory of Precision Manufacturing for Extreme Service Performance School of Mechanical and Electrical Engineering Central South University Changsha China National Key Laboratory of Science and Technology on Reliability Physics and Application of Electronic Component The China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China

ISBN: (数字)9798350360868

ISBN: (纸本)9798350360875

The performance of SiC MOSFETs in practical operational environments is challenged by multifaceted stress scenarios, encompassing thermal, mechanical, and electrical stress, which significantly influence their reliability and operational longevity. Consequently, a comprehensive exploration of aging precursors and failure mechanisms becomes imperative for the SiC MOSFETs under diverse stress interactions. This study focused on the impact of low- temperature storage (LTS) on short-circuit (SC) ruggedness through direct current characteristic tests (DC test), low- frequency noise tests (LFN), and failure analysis (FA) for 1.2 kV SiC MOSFETs. The outcomes revealed that LTS stress adversely affected short-circuit withstand time (SCWT). These findings provide insights into the reliability and operational lifespan of SiC MOSFETs under real-world operating conditions.

关键词： MOSFET Electron traps Temperature Silicon carbide Noise Failure analysis Logic gates

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MEMS Sensitive Structure Sand and Dust Pollution Test and Its Degradation Characteristics

MEMS Sensitive Structure Sand and Dust Pollution Test and It...

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International Conference on reliability, Maintainability and Safety,ICRMS

作者： Bin Ruan Chunlong Zhu Tingting Liu Chunhua He Ruiwen Liu Qinwen Huang School of Information Engineering Southwest University of Science and Technology Mianyang China Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China School of Computer Guangdong University of Technology Guangzhou China Institute of Microelectronics Chinese Academy of Science Beijing China

ISBN: (数字)9798350329988

ISBN: (纸本)9798350329995

The sensitive structures of certain devices containing micro-electromechanical system (MEMS) must be directly exposed to the working environment, making them vulnerable to contamination by dust and other pollutants in that environment. Consequently, this contamination degrades the performance of the device, impacting both its working life and stability. Existing test methods, such as GB/T 4208–2017 and GB/T 2423.37-2006, are not entirely suitable for evaluating the sand and dust contamination test of these MEMS devices. To address these issues, a thermistor-based test structure was designed and processed to develop an evaluation method suitable for testing the sand and dust contamination sensitive MEMS structures. The test results indicate that, unlike other hermetically sealed electronic devices, the imposition of electrical stress and cycling of the operating voltage “on-off” during the test does not increase dust accumulation. Furthermore, due to sand and dust contamination, the thermistor value of the device drifts during operation. This drift primarily arises from increased thermal resistance between the heating element of the device and the surrounding environment, resulting from the accumulation of sand and dust, which results in the increase of temperature of the heating element and ultimately results in an elevated thermistor value. This study can provide support for the structural design and package design of MEMS sensitive structures, and provide a basis for the identification and inspection of related products and the development of detailed specifications.

关键词： Micromechanical devices Temperature sensors Thermal resistance Thermistors Voltage Contamination Thermal stability Stress Resistance heating Testing

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