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Metal-Organic Frameworks Offering Tunable Binary Active Sites toward HighlyEfficient Urea Oxidation Electrolysis

Research 2022年第4期2022卷 309-320页

作者： Xuefei Xu Qingming Deng Hsiao-Chien Chen Muhammad Humayun Delong Duan Xia Zhang Huachuan Sun Xiang Ao Xinying Xue Anton Nikiforov Kaifu Huo Chundong Wang Yujie Xiong School of Optical and Electronic Information Wuhan National Laboratory for OptoelectronicsOptics Valley LaboratoryHuazhong University of Science and TechnologyWuhan 430074China Physics Department and Jiangsu Key Laboratory for Chemistry of Low-Dimensional Materials Huaiyin Normal UniversityHuaian 223300China Center for Reliability Science and Technologies Chang Gung UniversityTaoyuan33302 TaiwanChina School of Chemistry and Materials Science University of Science and Technology of ChinaHefei230026 AnhuiChina Department of Physics College of ScienceShihezi UniversityXinjang 832003China Department of Applied Physics Ghent UniversityGent 9000Belgium

Electrocatalytic urea oxidation reaction(UOR)is regarded as an effective yet challenging approach for the degradation of urea in wastewater into harmless N2 and CO_(2).To overcome the sluggish kinetics,catalytically active sites should be rationally designed to maneuver the multiple key steps of intermediate adsorption and ***,we demonstrate that metal-organic frameworks(MOFs)can provide an ideal platform for tailoring binary active sites to facilitate the rate-determining steps,achieving remarkable electrocatalytic activity toward ***,the MOF(namely,NiMn_(0.14)-BDC)based on Ni/Mn sites and terephthalic acid(BDC)ligands exhibits a low voltage of 1.317 V to deliver a current density of 10 mA cm^(-2).As a result,a high turnover frequency(TOF)of 0.15 s^(-1) is achieved at a voltage of 1.4 V,which enables a urea degradation rate of 81.87%in 0.33 M urea *** combination of experimental characterization with theoretical calculation reveals that the Ni and Mn sites play synergistic roles in maneuvering the evolution of urea molecules and key reaction intermediates during the UOR,while the binary Ni/Mn sites in MOF offer the tunability for electronic structure and d-band center impacting on the intermediate *** work provides important insights into active site design by leveraging MOF platform and represents a solid step toward highly efficient UOR with MOF-based electrocatalysts.

关键词： solution steps Highly

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MEMS Sensitive Structure Sand and Dust Pollution Test and Its Degradation Characteristics

MEMS Sensitive Structure Sand and Dust Pollution Test and It...

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International Conference on reliability, Maintainability and Safety,ICRMS

作者： Bin Ruan Chunlong Zhu Tingting Liu Chunhua He Ruiwen Liu Qinwen Huang School of Information Engineering Southwest University of Science and Technology Mianyang China Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China School of Computer Guangdong University of Technology Guangzhou China Institute of Microelectronics Chinese Academy of Science Beijing China

ISBN: (数字)9798350329988

ISBN: (纸本)9798350329995

The sensitive structures of certain devices containing micro-electromechanical system (MEMS) must be directly exposed to the working environment, making them vulnerable to contamination by dust and other pollutants in that environment. Consequently, this contamination degrades the performance of the device, impacting both its working life and stability. Existing test methods, such as GB/T 4208–2017 and GB/T 2423.37-2006, are not entirely suitable for evaluating the sand and dust contamination test of these MEMS devices. To address these issues, a thermistor-based test structure was designed and processed to develop an evaluation method suitable for testing the sand and dust contamination sensitive MEMS structures. The test results indicate that, unlike other hermetically sealed electronic devices, the imposition of electrical stress and cycling of the operating voltage “on-off” during the test does not increase dust accumulation. Furthermore, due to sand and dust contamination, the thermistor value of the device drifts during operation. This drift primarily arises from increased thermal resistance between the heating element of the device and the surrounding environment, resulting from the accumulation of sand and dust, which results in the increase of temperature of the heating element and ultimately results in an elevated thermistor value. This study can provide support for the structural design and package design of MEMS sensitive structures, and provide a basis for the identification and inspection of related products and the development of detailed specifications.

关键词： Micromechanical devices Temperature sensors Thermal resistance Thermistors Voltage Contamination Thermal stability Stress Resistance heating Testing

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Research on mechanism of improving the cut-off frequency of terahertz Schottky diodes in air-bridge structures by structure optimization

Research on mechanism of improving the cut-off frequency of ...

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International Conference on (ICEPT) electronic Packaging technology

作者： Yuebo Liu Ke Zhang QiuLing Qiu Xi Luo Xiaoting Chen Ruihan Liu Honghui Liu Reliability Physics and Application Technology of Electronic Component Key Laboratory China Electronic Product Reliability and Environmental Testing Research Institute (CEPREI) Guangzhou China Reliability Research and Analysis Centre China Electronic Product Reliability and Environmental Testing Research Institute (CEPREI) Guangzhou China Components and materials sector data center China Electronic Product Reliability and Environmental Testing Research Institute (CEPREI) Guangzhou China State Key Laboratory of High Power Semiconductor Lasers Changchun University of Science and Technology Changchun China School of Materials Science and Engineering Xiamen University of Technology Xiamen China School of Optical and Electronic Information Huazhong University of Science and Technology Wuhan China Testing technology Research Center China Electronic Product Reliability and Environmental Testing Research Institute (CEPREI) Guangzhou China

ISBN: (数字)9798350353808

ISBN: (纸本)9798350353815

In the realm of air bridge structures for Schottky barrier diodes operating in the millimetre wave or terahertz band, cut-off frequency serves as a critical metric for gauging device performance. This research holds significance in guiding device design and enhancing performance by refining the device's architecture, thereby reducing capacitance values and elevating cut-off frequency without adding complexity to the manufacturing process. In this study, we investigate how the shape and spacing of mesas or pads impact device capacitance through electrostatic field simulations, leveraging Maxwell's capacitance matrix and mutual capacitance matrix. Simulation analysis and experimental validation reveal that devices with circular Schottky contact electrode pads and minimal pad area exhibit lower capacitance values. Furthermore, we observe that the capacitance of the device initially decreases and then increases with the length of the air bridge. An optimal air bridge length exists that minimizes the capacitance of the device. This research offers valuable insights for refining these devices.

关键词： Electrodes Performance evaluation Schottky diodes Shape Atmospheric modeling Cutoff frequency Schottky barriers

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The Study of Activation Energy of Electromigration at Different Temperature

The Study of Activation Energy of Electromigration at Differ...

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System reliability and Safety Engineering (SRSE), International Conference on

作者： Ning Li Zhijian Chen Xiaowen Zhang South China University of Technology Guangzhou China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou Guangzhou China

In this paper, electromigration (EM) activation energy versus temperature in advanced damascene copper lines has been studied. EM experiments have been carried out on fully back-end processed samples under the condition of different temperatures and current densities. The metal line test structures used have the four-terminal Kelvin configuration and the lines length is 800µm with the minimum design rule width. The specific location of failure was observed by scanning electron microscope (SEM) and the failure mechanism was analyzed. The mechanical stress of the test structure was measured by Raman spectroscopy and the effect of mechanical stress on the reliability of metal electromigration was studied. It is found that the activation energy decreases slowly with the decrease of the test temperature. When the activation energy acquired under high temperature environment was extrapolated to operation condition by quadratic polynomial fitting, the activation energy under the environment temperature of 300°C is different from the value under the operation condition. Meanwhile, when predicting the EM lifetime, the results is that the EM lifetime under the operation condition decreased to 18% compared to that under the environment temperature of 300°C.

关键词： Electromigration Scanning electron microscopy Raman scattering Life estimation Safety Copper reliability

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Investigation on the Degradation Mechanism of A1GaN/GaN HEMTs Under the Effect of Microwave Pulses at Different Powers

Investigation on the Degradation Mechanism of A1GaN/GaN HEMT...

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Prognostics and System Health Management Conference (PHM-Qingdao)

作者： Fanfeng Yang Min Liao Binjian Zeng Peiliang Yang Yiqiang Chen College of Materials Science and Engineering Xiangtan University Xiangtan China The Science and Technology on Reliability Physics and Application of Electronic Component Laboratory The No.5 Electronics Research Institute of the Ministry of Industry and Information Technology Guangzhou China

We have investigated the effect of microwave pulse stress of different powers on A1GaN/GaN HEMTs. The dc characteristics of the devices were first scrutinized. The results indicate that the electrical characteristics of the devices are degraded after stress. The saturation drain-source current decreases from 681.8 mA to 246.5 mA, a decrease of 63.8 63.8%, at the power 40 dBm. And at the power 45 dBm, the saturation drain-source current drops even more, from 662.3 mA to 176.7 mA, a drop of 73.3 73.3%. The stress results in significant positive drift of threshold voltage and decrease of gate leakage current. And the degradation is more obvious with increasing microwave pulses power. Then, the internal defects of the device are characterized by low-frequency noise method, and the mechanism of device degradation is discussed. At the power of 45 dBm, the internal defect density of the device doubles, resulting in more electrons being captured at the channel. This is useful for the reliability level of future devices and practical applications.

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Flash sintering of high-purity alumina at room temperature

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Journal of Advanced Ceramics 2023年第12期12卷 2382-2388页

作者： Yueji Li Qingguo Chi Ziyang Yan Nianping Yan Jinling Liu Rongxia Huang Xilin Wang Engineering Laboratory of Power Equipment Reliability in Complicated Coastal Environments Tsinghua Shenzhen International Graduate SchoolTsinghua UniversityShenzhen 518055China Key Laboratory of Engineering Dielectrics and Its Application Ministry of EducationHarbin University of Science and TechnologySchool of Electrical and Electronic EngineeringHarbin University of Science and TechnologyHarbin 150080China State Grid Tianjin Chengxi Electric Power Supply Company Tianjin 300113China State Grade Jiangxi Electric Power Research Institute Nanchang 330096China School of Mechanics and Aerospace Engineering Southwest Jiaotong University Chengdu 611756China School of Electromechanical Engineering Guangdong University of TechnologyGuangzhou 510006China

For the first time,the flash sintering(FS)of high-purity alumina at room temperature,which was previously considered unachievable due to its low electrical conductivity,was conducted *** electrical arc originating from surface flashover was harnessed to induce FS at room temperature and low air *** successful FS of high-purity alumina was realized at 60 kPa under the arc constraint,resulting in a notable relative density of the alumina sample of 98.7%.The electric–thermal coupling between the arc and high-purity alumina sample during the arc-induced FS process was analyzed via the finite element simulation *** results revealed the thermal and electrical effects of the arc on the sample,which ultimately enhance the electrical conductivity of the alumina *** formation of a conductive channel on the sample surface,a result of increased electrical conductivity,was the pivotal factor in achieving FS in high-purity alumina at room *** arc constraint technique can be applied to numerous materials,such as ionic conductors,semiconductors,and even insulators,under room-temperature and low-air-pressure conditions.

关键词： flash sintering(FS) high-purity alumina arc constraint electric-thermal coupling simulation

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The Effects of RF Power and Cavity Structure on the Plasma Discharge Characteristics of RPS

The Effects of RF Power and Cavity Structure on the Plasma D...

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electronics and Devices, Computational science (ICEDCS), International Conference on

作者： Hai Lin Wei Su Ming Chen Renhuai Liu School of Mechanics and Construction Engineering Jinan University Guangzhou China Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China MOE Key Lab of Disaster Forecast and Control in Engineering Guangzhou China

In this paper, a two-dimensional model of plasma diffusion in remote plasma source discharge chamber is established by COMSOL plasma module. The electron density and electron temperature distributions inside the discharge cavity were obtained by adjusting the thickness of alumina coating and the magnitude of RF power parameters. Based on the results, the authors discuss the effects of different alumina coating thickness and RF power on the electron density and electron temperature inside the discharge cavity, which provide theoretical guidance for the subsequent optimization of the internal structure of the discharge cavity and the discharge parameters.

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Research on Interactive electronic Manual Based on VR technology 21st

Research on Interactive Electronic Manual Based on VR Techno...

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21st Asia Simulation Conference, AsiaSim 2022

作者： Yongqi, Ma Xun, Cheng Qiyun, He Institute of Computer Application China Academy of Engineering Physics Sichuan Mianyang62100 China University of Electronic Science and Technology of China Sichuan Chengdu610000 China

ISBN: (纸本)9789811991943

Based on traditional IETM and VR technology, the concept of "VR + Manual" is proposed, and the main function design and four-layer architecture design of "VR + Manual" are given. The digital mapping data model is established between the IETM technical data and the digital prototype through the ontology data modeling method, and the seamless connection between the data model and the "digital prototype modeling and simulation engine" is realized. By using the integrating multi-class information visualization method, the visualization of multi-dimensional equipment technical status based on the digital prototype is realized. A data-driven interactive interface generation engine is proposed, which is oriented to five types of IETM data, such as description, procedure, fault, illustrated Parts, and maintenance plan. It realizes the rapid generation of interactive interfaces and the release of the application. © 2022, The Author(s), under exclusive license to Springer Nature Singapore Pte Ltd.

关键词： Visualization

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Using Load Transient Waveform to Analyze Fault Propagation Mechanism in DC-DC Switching Power Supply

Using Load Transient Waveform to Analyze Fault Propagation M...

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Progress in Electromagnetic Research Symposium (PIERS)

作者： Junliang Wan Pengfei Yu Qiang-Ming Cai Xin Cao Longjian Zhou Haoran Li Yuyu Zhu Jun Fan School of Information Engineering Southwest University of Science and Technology Mianyang China Laboratory of Science and Technology on Reliability Physics and Application of Electronic Component Guangzhou China Robot Technology Used for Special Environment Key Laboratory of Sichuan Province Mianyang China Tianfu Institute of Research and Innovation Southwest University of Science and Technology (SWUST-TIRI) China

ISBN: (数字)9798350375909

ISBN: (纸本)9798350375916

The degradation of certain components within DC-DC power supplies can lead to abnormal performance, resulting in the occurrence of faults. The degradation of components can cause changes in output voltage and current, and the different degradation characteristics of components have different impacts on the characteristics of output parameters. Therefore, it is necessary to master this impact relationship, that is, the fault propagation mechanism can be used to effectively diagnose faults and manage health. Studying the fault propagated mechanism is an important prerequisite for fault diagnosis. Output terminals of DC-DC power supply are usually connected in parallel with electrolytic capacitors. The function of electrolytic capacitors is to filter, filtering out most of the AC part of the output voltage, and reducing the ripple of the output voltage. Electrolytic capacitors are the most vulnerable components to failure in switching power supplies, with approximate 60% of failed components being electrolytic capacitors. Therefore, the fault propagation mechanism of electrolytic capacitors is a key research topic. Most research focuses on the fault propagation mechanism based on steady-state output signals. This article studies the fault propagation mechanism based on transient output signals. Through experimental testing, the impact of parameter degradation of electrolytic capacitors on the transient waveform of output voltage and the mapping relationship between capacitor degraded parameters and transient waveform are studied. The method is to analyze the voltage waveform when the current step changes using equivalent degradated experiments of capacitors. Its advantage lies in the fact that transient waveforms are more sensitive than steady-state waveforms and require lower sampling rates, making it easier to analyze the degradated characteristics of electrolytic capacitors. For power supplies with simple structures, data is collected through simulation. For commerc

关键词： Degradation Resistance Power supplies Capacitors Voltage Switches Capacitance

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Numerical Simulation of Harmonic Response Analysis for Small Out-Line Package

Numerical Simulation of Harmonic Response Analysis for Small...

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Software Engineering, Social Network Analysis and Intelligent Computing (SSAIC), Asia-Pacific Conference on

作者： Hai Lin Xianshan Dong Wei Su Qinwen Huang Agam Tomar School of Mechanics and Construction Engineering Jinan University Guangzhou China Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China MOE Key lab of Disaster Forecast and Control in Engineering Guangzhou China Faculty of Engineering and Mathematical Sciences University of Western Australia Australia

ISBN: (数字)9798350393682

ISBN: (纸本)9798350393699

In order to discuss the influence of the number of sheets on acceleration and frequency curve of sample surface, the finite element model of clamp, SOP sample and metal sheet is firstly established with Solidworks. Different number of sheets are laid on the surface of SOP sample. Then changing the number of the paper sheets, harmonic response analysis is converted based on modal analysis. The influence of different number of sheet on acceleration and frequency curve is discussed. The results show the relation between acceleration-frequency curve of different thickness of paper, which provides reference for packaging design.

关键词： Solid modeling Social networking (online) Modal analysis Metals Packaging Harmonic analysis Numerical simulation

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