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Study on the Mechanism of High Power Microwave Radiation Effect of GaN LNA 10

Study on the Mechanism of High Power Microwave Radiation Eff...

10th IEEE International Symposium on Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, MAPE 2024

作者： Liu, Min Cai, Zongqi Bian, Li'an Lv, Anru Tang, Houlu Chen, Yiqiang Lu, Guoguang School of Physical and Electronic Science Changsha University of Science&Technology CEPREI Guangzhou China The Science and Technology on Reliability Physics and Application of Electronic Component Laboratory CEPREI Guangzhou China

ISBN: (纸本)9798331533922

In this paper, a high-power microwave resonant cavity is designed and used to build a high-power microwave radiation experimental system, and the high-power microwave radiation interference effect of GaN low-noise amplifier is studied. Unlike lots of previous papers whose research focuses on the high-power microwave injection damage effects of RF front-end devices, this paper proposes a simple high-power microwave radiation testing system, which can generate a high-power microwave radiation field of 100kV/m under continuous wave and pulse working conditions. The gain of GaN LNA decreases with the increase of high-power microwave radiation field strength, mainly due to the vertical high-power microwave radiation equal to the injection power to the input port of LNA, which causes saturation of the LNA, and reduces its linearity and amplification ability for weak signals. This experimental system greatly reduces the high cost, difficulty, and safety requirements of traditional high-power microwave effect systems. It has certain practical value for conducting high-power microwave radiation experiments on digital circuits such as MCU and FPGA, as well as analog circuit components such as limiters and amplifiers. © 2024 IEEE.

关键词： Low noise amplifiers

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Research on Internal Defect Detection Algorithm of Ultrasonic Image Based on Attention Mechanism 5

Research on Internal Defect Detection Algorithm of Ultrasoni...

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2023 5th International Conference on Artificial Intelligence and Computer applications, ICAICA 2023

作者： Zhao, Yue Zhang, Qiuzhen Luo, Jun China Electronic Product Reliability and Environmental Testing Research Institute Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China

ISBN: (纸本)9798350323313

Scanning Acoustic Microscope is a nondestructive and effective technology to detect the internal defects of chips, which is widely used in IC screening. However, at present, the ultrasonic defect detection mainly focuses on traditional visual inspection, which has the disadvantages of low efficiency and high false detection rate. To solve these problems, this paper proposes an ultrasonic defect YOLO detection algorithm by introducing and comparing three common attention modules (SENet, CBAM and ECANet). On the basis of YOLO-v4-tiny model, the attention module is embedded in the feature extraction backbone network to distinguish the importance of different channels in the feature map, strengthen the key features of the target area, and improve the detection accuracy of the network. The experimental results show that the algorithm based on CBAM attention module has better detection accuracy and efficiency. © 2023 IEEE.

关键词： Efficiency

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Study on Failure Mechanisms of SiC Power Devices Induced by Heavy Ion Irradiation 5

Study on Failure Mechanisms of SiC Power Devices Induced by ...

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5th International Conference on Radiation Effects of electronic Devices, ICREED 2023

作者： Peng, Chao China Electronic Product Reliability and Environmental Testing Research Institute Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China

Radiation-induced degradations of SiC power JBS diodes and MOSFETs are investigated by 181Ta ion irradiation. The failure mode characteristics and failure mechanism of SiC devices are studied through failure analysis ... 详细信息

ISBN: (纸本)9798350358872

关键词： Silicon carbide

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Fault Prediction of DC-DC Devices Based on Deep Belief Network

Fault Prediction of DC-DC Devices Based on Deep Belief Netwo...

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2024 IEEE International Conference on Sensing, Diagnostics, Prognostics, and Control, SDPC 2024

作者： Yu, Pengfei Wang, Jiao Wan, Junliang Cai, Qiang-Ming Laboratory of Science and Technology on Reliability Physics and Application of Electronic Component Guangzhou China China Electronic Products Reliability and Environmental Test Institute Guangzhou China School of Information Engineering Southwest University of Science and Technology Mianyang China

ISBN: (纸本)9798350388855

Fault prediction is an important research field for power supply status management. Choosing an appropriate algorithm has a significant impact on the effectiveness of prediction. This article uses Deep Belief Network (DBN) to predict the device efficiency degradation of an isolated flyback DC-DC converter. Deep Belief Network (DBN) can be seen as a stack of a series of Restricted Boltzmann Machines (RBMs). The final prediction error (RMSE) is 0.00039. The results indicate that DBN has a relatively small error in predicting device efficiency degradation in DC-DC devices. The advantage of DBN is that DBN can perform fault prediction on complex power systems without establishing a physical model. It is convenient to research fault prediction only based on mathematical models. © 2024 IEEE.

关键词： deep belief network degradation fault prediction

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RESEARCH ON THE reliability OF WIRE BONDING IN HUMID ENVIRONMENTS 13

RESEARCH ON THE RELIABILITY OF WIRE BONDING IN HUMID ENVIRON...

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13th International Conference on Quality, reliability, Risk, Maintenance, and Safety Engineering, QR2MSE 2023

作者： Zhang, Xiaowen Ling, Xiaolin Gao, Ru Science and Technology on Reliability Physics and Application of Electronic Component Laboratory 110 DongGuangZhuang Road Guangzhou China

ISBN: (纸本)9781839539848

In order to study the reliability of bonding wire under the condition of humidity environment, a testing structure chip was designed and three samples were subjected to humid test at 85℃/85% RH. During the experiment, all three samples showed an increase in leakage current. Through on-site observations, it was found that the leakage current occurred initially, when the experiment continued, the test structure failed due to the detachment of bonding wires from the bonding pad. The failure analysis showed that the surface of the passivation layer between adjacent aluminium pads was covered with impurities, including carbon (C), sodium (Na), aluminium (Al), tungsten (W), and chlorine (Cl) elements. The presence of these conductive elements resulted in leakage between two adjacent aluminium pads on the chip surface that had different electronic potentials. The detachment of bonding wires from the bonding pad is attributed to a chemical reaction caused by vapors. This reaction corrodes the metal aluminium on the bonding pad, leading to the formation of aluminium oxide, causing the gold wire to detach from the pad, and the lifetime of the bonding wire solder joints has been calculated. © The Institution of Engineering & technology 2023.

关键词： Aluminum oxide

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Low temperature thermal strain of the IRFPA and the creep lifetime evaluation of solder joints

Low temperature thermal strain of the IRFPA and the creep li...

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2022 Applied Optics and Photonics China: Optoelectronics and Nanophotonics, AOPC 2022

作者： Liu, Yue Bo Yan, Jia Hui Liao, Wen Yuan Niu, Hao Chen, Xi Yu Li, Shu Wang Lai, Can Xiong Yang, Shao Hua Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou511370 China

ISBN: (纸本)9781510662261

Cryogenic Infrared Rays Focal Plane Array (IRFPA) detectors have been widely used in industry, transportation, security monitoring, meteorology and medicine because of the high sensitivity and temperature resolution. For HgCdTe IRFPA detectors, the typical working temperature is about 80 K. To make the IRFPA detector works at low temperatures, the detector should be integrated on a Dewar cold platform, whose refrigeration power would be higher than the heat load of the IRFPA. In general, the IRFPA detector and the Dewar cold platform would be integrated together to form a Dewar assembly at room temperature. In addition, the materials in IRFPA have different thermal expand coefficients, it means the thermal mismatch in the IRFPA would be an unavoidable issue in work. The thermal strain has a significant effect on the solder joints in switching cycle, which could lead to the creep strain and thermal fatigue crack. With the increase of the switch cyclic number, the creep strain and thermal fatigue crack under the thermal stress would lead to the failure of solder joints. Therefore, the low temperature thermal strain in switching cycle can affect the reliability of IRFPA detectors. So, the low temperature thermal strain and the creep lifetime of solder joints has been researched. © 2023 SPIE.

关键词： Dewars

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Flexible Noninvasive Broadband Voltage Probe as an Anti-Interference Monitoring Tool

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IEEE Sensors Journal 2025年第11期25卷 20623-20634页

作者： Huang, Qifeng Chen, Yanhao Luo, Chengyang Li, Shasha Wang, Lei Cai, Zongqi Qu, Chenbing Fang, Wenxiao Fernandez-Garcia, Raul Sun Yat-sen University Department of Integrated Circuit Shenzhen518000 China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou510610 China Universitat Politècnica de Catalunya Department of Electronic Engineering Barcelona08034 Spain

Noninvasive measurement methods are gradually gaining attention as a monitoring tool for time-domain signals. In this article, a novel noninvasive flexible voltage probe with an operating frequency from 1 MHz to 1 GHz is proposed for monitoring the voltage signals at the input and output ports of a low-noise-amplifier (LNA) module. The flexible probe design and its performance are verified through simulation and experiments. The probe can be pasted to the trace surface for noninvasive voltage measurement. The probe has been verified to operate properly in a strong electromagnetic environment of 24.3 kV/m. The transmission coefficients obtained at different lengths, bending angles, bending times, and long-term bending show high consistency, with an average error of less than 5%. In addition, the reconstructed voltage time-domain curves closely match the directly measured voltages under an injected double-exponential voltage waveform, with an average error of 2.44%. In the application test, the input and output signals coupled by the probe are calculated by the time-domain reconstruction method. It is highly consistent with the theoretical gain value of the LNA. The experimental results show that the flexible probe can be used as a noninvasive time-varying voltage monitoring tool at the port of the LNA module. © 2001-2012 IEEE.

关键词： Probes Voltage measurement Monitoring Transmission line measurements Sensors Couplings Electric fields Time-domain analysis Interference Electromagnetics

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Research on IC-LOGO Extraction Algorithm Based on Deep Semantic Segmentation Network 6

Research on IC-LOGO Extraction Algorithm Based on Deep Seman...

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6th International Conference on Artificial Intelligence and Computer applications, ICAICA 2024

作者： Zhao, Yue Guan, Mingfeng Luo, Jun Zhang, Qiuzhen China Electronic Product Reliability and Environmental Testing Research Institute Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China China Electronic Product Reliability and Environmental Testing Research Institute Testing Center of Electronic Components Guangzhou China

ISBN: (纸本)9798350377255

Considering the characteristics of the logo and character areas being intertwined, along with the variability in size and irregularity in shape of logos within integrated circuit (IC) identification images, this paper propose a logo extraction algorithm based on a deep semantic segmentation network. Initially, preprocessing and data augmentation techniques are employed to facilitate the creation of an IC identification dataset, alongside the establishment of a semantic segmentation dataset specifically for the LOGO area. Subsequently, network models including DeepLabv3+, U-Net, PSPNet, and HRNet are trained and validated to identify the optimal model for IC logo extraction. The experimental results indicate that the deep semantic segmentation network demonstrates effective segmentation performance in the extraction of integrated circuit logos, with the HRNet model achieving high segmentation accuracy and an average intersection-over-union ratio of 80%. © 2024 IEEE.

关键词： Semantic Segmentation

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Degradation Evaluation of Neutron Irradiation Effect on AlGaN/GaN Metal-Insulator- Semiconductor High Electron Mobility Transistors 25

Degradation Evaluation of Neutron Irradiation Effect on AlGa...

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25th International Conference on electronic Packaging technology, ICEPT 2024

作者： Duan, Xiaoyue Li, Pinbo He, Liang Shi, Yijun Chen, Xinghuan Ni, Yiqiang Liu, Jun He, Zhiyuan Chen, Yiqiang School of Electrical Engineering University of South China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Hengyang China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China School of Electrical Engineering University of South China Hengyang China School of Integrated Circuits Guangdong University of Technology Guangzhou China

ISBN: (纸本)9798350353808

We investigate the degradation effects of neutron irradiation on AIGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) in this work. The performance of the devices is characterized through relevant electrical current-voltage (I-V) test and capacitance- voltage (C-V) test. The result indicates that the electrical parameter of the device degrades after neutron irradiation, such as positive shift of threshold voltage, reduction in output drain current, and the increase of the on-resistance. Additionally, combining with the frequency-dependent conductance method, it displays that shallow energy level- interface states at the AIGaN/GaN heterojunction increase, along with slightly shifting to deeper energy level after neutron irradiation. Neutron irradiation introduces more interface states and increase the scattering which degrading the carrier concentration and mobility, causing related degradation on electrical performances. This study provides useful reference value for the application of GaN-based devices in the aerospace. © 2024 IEEE.

关键词： Gallium nitride

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A Fault Diagnosis Method for Power electronic Circuits Based on GADF Coding and Channel Split Residual Network

A Fault Diagnosis Method for Power Electronic Circuits Based...

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2024 IEEE International Conference on Sensing, Diagnostics, Prognostics, and Control, SDPC 2024

作者： Meng, Linghui Xie, Jinyang Zhou, Zhenwei Chen, Yiqiang China Electronic Product Reliability and Environmental Testing Research Institute Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China School of Electrical Engineering Beijing Jiaotong University Beijing China

ISBN: (纸本)9798350388855

With the objective to achieve an accurate diagnosis of commonly encountered fault problems in power electronic circuits and to prevent the occurrence of catastrophic failures, a soft fault diagnosis model for dc-dc converter based on the gram angle difference filed (GADF) and the channel split residual network (CSRN) is proposed. Firstly, the original fault data is coded by GADF to generate the fault data set. Secondly, channel split preprocessing (CSP) and Darwinian selection mechanism (DSM) are introduced to enhance the residual network and further construct the CSRN. CSP emphasizes the important channel features in the fault feature images by achieving a brute-force enhancement of the channel information and highlighting subtle features. DSM retains the key features and removes the secondary features during network training. The GADF-CSRN diagnosis model proposed in this paper is verified by the fault data collected from a dc-dc converter. The result showed that a diagnosis accuracy of 97.92% is achieved, surpassing the accuracy of conventional method by at least 1.85%, while exhibiting better noise resistance. © 2024 IEEE.

关键词： DC distribution systems

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