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International Conference on reliability, Maintainability and Safety,ICRMS

作者： Yao Li Xuan He Liang He Zhiyuan He Yiqiang Ni Xiaobiao Han Jun Liu School of Electrical Engineering University of South China Hengyang China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China Industry-Education-Research Institute of Advanced Materials and Technology for Integrated Circuits School of Electronics and Information Engineering Anhui University Hefei China

ISBN: (数字)9798350329988

ISBN: (纸本)9798350329995

The dynamic on-resistance degradation and switching performance of a commercial 650 V cascode GaN power device are evaluated. A double-pulse test platform is used to investigate the dynamic on-resistance behaviors with various off-state drain bias voltages, drain currents, and off-state stress times under hard-switching conditions. To evaluate switching performance, an Si-based metal-oxide-semiconductor field-effect transistor (MOSFET) is used as a reference for comparing dynamic on-resistance and switching energy loss with cascode GaN high-electron-mobility transistors (HEMT). The test results indicate that higher off-state drain bias and drain current lead to more severe dynamic on-resistance degradation. Moreover, with a higher switching speed, the cascode GaN HEMT demonstrates a reduced switching energy loss compared to that of the Si-based MOSFET.

关键词： Degradation Performance evaluation MOSFET Energy loss Switches HEMTs Transistors Stress Switching circuits Testing

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Analysis of Internal Atmosphere of InGaAs Detectors with Different Degassing Conditions 3

Analysis of Internal Atmosphere of InGaAs Detectors with Dif...

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3rd International Conference on System reliability and Safety Engineering, SRSE 2021

作者： Lai, Canxiong Sun, Wen Yang, Shaohua Zhou, Bin Sci. and Technology on Reliability Physics and Application of Electronic Component Laboratory CEPREI Guangzhou China Key Laboratory of Infrared Imaging Materials and Detectors Shanghai Institute of Technical Physics Shanghai China

ISBN: (纸本)9781665401609

the internal atmosphere composition of the cavity package of InGaAs detector has an important impact on its reliability. In this paper, the internal atmosphere contents of the detectors prepared at different degassing conditions are analyzed. The results show that vacuum baking at a relatively low temperature such as 45°C can reach an acceptable internal atmosphere level. Higher baking temperature °fif ((db further reduce the moisture content to about 1000ppmv, which would make the detector more reliable for long-term operation and thus be an ideal choice for degassing. Besides vacuum baking, the degassing effectiveness of nitrogen gas washing is also confirmed to be acceptable, although the moisture and oxygen contents are higher than those of vacuum baking. © 2021 IEEE.

关键词： Semiconducting indium gallium arsenide

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Influence of the acceptor-Type trap on the characteristic of the short-channel GaN MOS-HEMT 15

Influence of the acceptor-Type trap on the characteristic of...

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15th IEEE International Conference on Solid-State and Integrated Circuit technology, ICSICT 2020

作者： Shi, Yijun Fu, Zhiwei Yao, Bin Chen, Si Chen, Yiqiang Zhou, Bin Huang, Yun Wang, Zhizhe Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou510610 China

ISBN: (纸本)9781728162355

In this work, the influences of the acceptor-Type trap (located at GaN/insulator interface and GaN buffer layer) on the threshold voltage and 2-dimension electron gas (2DEG) density are analyzed for short-channel GaN MOS-HEMT. Particularly, the influence of the acceptor-Type trap on short-channel effect in short-channel GaN MOS-HEMT is analyzed and modeled for the first time. The analyzed results have shown that the acceptor-Type trap plays an important role on the threshold voltage, 2DEG density, and short-channel effect. The calculated results are well supported by the numerical simulation and experimental measurement, which verified the correctness and accuracy of the presented model to predict the dependence of threshold voltage, 2DEG density, and short-channel effect on acceptor-Type trap. © 2020 IEEE.

关键词： Gallium nitride

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Self-catalyzed Growth and Optoelectronic Properties of High-Quality CsPbBr3and CsPbI3Nanowires Based on Chemical Vapor Deposition

Self-catalyzed Growth and Optoelectronic Properties of High-...

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2024 International Conference on Next Generation electronics and Photonics, INGEP 2024

作者： Huang, Lanqing Lu, Hanglin Liu, Xingpeng Song, Zhuo Su, Jiande Li, Zhuofeng Song, Shuxiang Liu, Linsheng Guangxi Key Laboratory of Brain-Inspired Computing and Intelligent Chips Key Laboratory of Integrated Circuits and Microsystems Education Department of Guangxi Zhuang Autonomous Region School of Electronic and Information Engineering School of Integrated Circuits Guangxi Normal University Guilin541004 China College of Physics Science and Technology Guangxi Normal University Guilin541004 China Guangxi Key Laboratory of Precision Navigation Technology and Application Guilin University of Electronic Technology Guilin541004 China

In this work, high-quality CsPbBr3 and CsPbI3 nanowires were successfully grown on Si substrates via a vapor-liquid-solid (VLS) self-catalyzed growth mechanism using chemical vapor deposition (CVD). The nanowires were characterized by various techniques, including Scanning Electron Microscopy (SEM), Photoluminescence (PL), and Raman spectroscopy. The results demonstrate that the perovskite nanowires grown under the VLS mechanism exhibit strong photoluminescence intensity and excellent crystalline quality. Based on these high-quality nanowires, we further fabricated single-nanowire photodetectors. The CsPbBr3 nanowire photodetector exhibited a high photocurrent to dark current ratio of 4.2×103 and an outstanding responsivity of 1338 A/W. Meanwhile, the CsPbI3 nanowire photodetector also showed a photocurrent to dark current ratio of 10.6 and a responsivity of 991 A/W. These results indicate that perovskite nanowires grown by the VLS growth mechanism hold great promise for applications in photodetection. © Published under licence by IOP Publishing Ltd.

关键词： Nanowires

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Elemental topological ferroelectrics and polar metals of few-layer materials

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Physical Review Research 2024年第2期6卷 023208-023208页

作者： Hu Zhang Lulu Zhao RuiFeng Zhang Chendong Jin Ruqian Lian Peng-Lai Gong RuiNing Wang JiangLong Wang Xing-Qiang Shi Key Laboratory of Optic-Electronic Information and Materials of Hebei Province Research Center for Computational Physics of Hebei Province Hebei Key Laboratory of High-precision Computation and Application of Quantum Field Theory College of Physics Science and Technology

Ferroelectricity can exist in elemental phases as a result of charge transfers between atoms occupying inequivalent Wyckoff positions. We investigate the emergence of ferroelectricity in two-dimensional elemental materials with buckled honeycomb lattices. Various multibilayer structures hosting ferroelectricity are designed by stacking engineering. Ferroelectric materials candidates formed by group IV and V elements are predicted theoretically. Ultrathin Bi films show layer-stacking-dependent physical properties of ferroelectricity, topology, and metallicity. The two-bilayer Bi film with a polar stacking sequence is found to be an elemental topological ferroelectric material. Three and four bilayers Bi films with polar structures are ferroelectriclike elemental polar metals with topological nontrivial edge states. For Ge and Sn, trivial elemental polar metals are predicted. Our work reveals the possibility of designing two-dimensional elemental topological ferroelectrics and polar metals by stacking engineering.

关键词： Ferroelectricity First-principles calculations Topological materials 2-dimensional systems Honeycomb lattice Topological insulators Density functional theory Symmetries in condensed matter

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Gallium vacancy displacement damage induced by 1 MeV neutron irradiation in β-Ga2O3 solar-blind photodetector

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The European Physical Journal Special Topics 2024年 1-9页

作者： Guo, Xi Chang, Mengmeng Wang, Jinbin Bai, Ruxue Zhong, Xiangli Zhang, Fabi Wu, Fengmin Guo, Daoyou Department of Physics Zhejiang Sci-Tech University Hangzhou China College of Materials Science and Engineering Xiangtan University Xiangtan China Guangxi Key Laboratory of Precision Navigation Technology and Application Guilin University of Electronic Technology Guilin China

Due to its ultra-wide bandgap, large density and high atomic displacement threshold energy, β-Ga2O3 demonstrates excellent radiation hardness and holds significant potential for applications in the aerospace industry. In this study, we explored the impact of neutron irradiation damage on β-Ga2O3 photodetectors with two different structures: Schottky-type and metal–semiconductor–metal (MSM) Ohmic-type. Following neutron irradiation, the dark current, photocurrent, and photoresponsivity of the photodetectors significantly decreased, and the photoresponse speed slowed down. These effects can be attributed to displacement damage, primarily caused by gallium vacancies induced by neutron irradiation, which reduces carrier mobility and lowers carrier concentration through compensation mechanisms. Under an applied bias of 5 V and illuminated by 254 nm light with an intensity of 1000 μW/cm2, the photoresponsivity of the Schottky-type β-Ga2O3 photodetector decreased from 589.73 to 573.03 A/W, with a minimal attenuation rate of 2.83% after neutron irradiation. Both X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) analysis confirmed that neutron irradiation caused the breakage of covalent bonds in β-Ga2O3 and led to an increased presence of gallium vacancy defects as a result of displacement damage. Furthermore, Hall effect measurements indicated that neutron irradiation affected carrier mobility to a greater extent than carrier concentration in the β-Ga2O3 material system. This work not only provides important insights into the effect of neutron irradiation on the photoelectric performance and material physical properties of β-Ga2O3 based solar blind photodetectors but also highlights that Schottky-type photodetector exhibit the best resistance to neutron irradiation under positive bias.

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Simulation Analysis of Mechanical Response of Wire Bonding in SiP under Thermal-mechanical-electrical Coupling Load 3

Simulation Analysis of Mechanical Response of Wire Bonding i...

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3rd IEEE International Conference on Integrated Circuits, Technologies and applications, ICTA 2020

作者： Chen, Fangzhou Chen, Si Zhou, Bin Huang, Yun Qin, Fei Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China Beijing University of Technology Beijing China

ISBN: (纸本)9781728180328

The heat dissipation of chips rise the risk for reliability of the system in package (SiP). Sequential coupling FEM simulation method was adopted to evaluate the reliability of SiP. The sub-model technology was used to analyze the thermo-mechanical response of gold wire leads in the whole SiP device. Based on the simulation, the stress and temperature distribution of the lead wires are obtained. The maximum value is compared with the ultimate strength to evaluate the reliability of the product under working conditions. © 2020 IEEE.

关键词： System-in-package

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High power semiconductor laser array with single-mode emission

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中国物理B（英文版） 2022年第5期31卷 409-412页

作者： Peng Jia Zhi-Jun Zhang Yong-Yi Chen Zai-Jin Li Li Qin Lei Liang Yu-Xin Lei Cheng Qiu Yue Song Xiao-Nan Shan Yong-Qiang Ning Yi Qu Li-Jun Wang State Key Laboratory of Luminescence and Application Changchun Institute of OpticsFine Mechanics and PhysicsChinese Academy of SciencesChangchun 130033China Liaoning Institute of Science and Technology Anshan 114051China State Key Laboratory of Luminescence and Application Changchun Institute of OpticsFine Mechanics and PhysicsChinese Academy of SciencesChangchun 130033China Jlight Semiconductor Technology Co. Ltd.Changchun 130033China Academician Team Innovation Center of Hainan Province Key Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan ProvinceSchool of Physics and Electronic EngineeringHainan Normal UniversityHaikou 571158China State Key Laboratory of Luminescence and Application Changchun Institute of OpticsFine Mechanics and PhysicsChinese Academy of SciencesChangchun 130033China Peng Cheng Laboratory No.2 Xingke 1st StreetNanshanShenzhenChina

The semiconductor laser array with single-mode emission is presented in this *** 6-μm-wide ridge waveguides(RWGs)are fabricated to select the lateral *** the fundamental mode of laser array can be obtained by the *** the maximum output power of single-mode emission can reach 36 W at an injection current of 43 A,after that,a kink will *** slow axis(SA)far-field divergence angle of the unit is 13.65°.The beam quality factor M2 of the units determined by the second-order moment(SOM)method,is *** single-mode emission laser array can be used for laser processing.

关键词： semiconductor laser arrays single-mode high power high beam quality

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Analysis of Degradation Characteristics of Hard Disk Drives in Accelerated Aging Tests and Exploration of PHM Methods 6

Analysis of Degradation Characteristics of Hard Disk Drives ...

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6th IEEE International Conference on Sensing, Diagnostics, Prognostics, and Control, SDPC 2022

作者： Meng, Linghui Zhang, Chengquan Dong, Ming Hou, Bo China Electronic Product Relibility and Environmental Testing Research Institute Natl. Key Lab. of Sci. and Technology on Reliability Physics and Application of Electronic Component Guangzhou China Testing Research Institute China Electronic Product Relibility and Environmental Guangzhou China Liaoning Hongyanhe Nuclear Power Co. Ltd System and Equipment Department Dalian China

ISBN: (数字)9781665469869

ISBN: (纸本)9781665469869

Hard disk drives are critical important to the data center and failures can cause horrible data loss and great economic loss. Traditional smart data cannot truly reflect the real health status of the HDDs. So PHM methods need to be researched in order to monitor, diagnose and predict the health condition, Firstly, FMMEA was researched and smart attributes were analyzed. Then the accelerated degradation tests were designed and performed. Smart data collection and preliminary analysis were made for the two groups of experiments. Then a PHM flowchart was proposed for the HDDs including the health assessment and RUL prediction methods. With the tests going on and the degradation data accumulating, the PHM models and algorithms will be constantly trained, tested and validated. © 2022 IEEE.

关键词： Forecasting

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Investigation of maximum proton energy for qualified ground based evaluation of single-event effects in SRAM devices

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Nuclear science and Techniques 2019年第3期30卷 97-104页

作者： Zhan-Gang Zhang Yun Huang Yun-Fei En Zhi-Feng Lei Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute

Existing standards show a clear discrepancy in the specification of the maximum proton energy for qualified ground-based evaluation of single-event effects,which can range from 180 to 500 MeV. This work finds that the threshold linear energy transfer of a tested device is a critical parameter for determining the maximum proton energy. The inner mechanisms are further revealed. Highenergy deposition events(>10 MeV) in sensitive volumes are attributed to the interaction between protons and the tungsten vias in the metallization layers.

关键词： Proton Single-event effect Threshold LET Monte Carlo simulation

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