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Synergically improved energy storage performance and stability in sol–gel processed BaTiO_(3)/(Pb,La,Ca)TiO_(3)/BaTiO_(3) tri-layer films with a crystalline engineered sandwich structure

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Journal of Advanced Ceramics 2023年第12期12卷 2300-2314页

作者： Jinpeng Liu Ying Wang Hanfei Zhu Hongyu Luo Xiao Zhai Yu Huan Jing Yan Kun Wang Chao Liu Hongbo Cheng Jun Ouyang School of Chemistry and Chemical Engineering Qilu University of Technology(Shandong Academy of Sciences)Jinan 250353China School of Physics Shandong UniversityJinan 250100China School of Material Science and Engineering University of JinanJinan 250022China College of Physics and Electronic Engineering Qilu Normal UniversityJinan 250200China China Tobacco Shandong Industrial Co. Ltd.Jinan 250014China Key Laboratory of Key Film Materials&Application for Equipments(Hunan Province) Hunan Provincial Key Laboratory of Thin Film Materials and DevicesSchool of Material Sciences and EngineeringXiangtan UniversityXiangtan 411105China

Achieving an excellent energy storage performance,together with high cycling reliability,is desirable for expanding technological applications of ferroelectric ***,in well-crystallized ferroelectric materials,the concomitant high polarizability and low polarization saturation field have led to a square-shaped polarization–electric field loop,fatally impairing both recoverable energy density(W_(rec))and efficiency(η).Nanocrystalline ferroelectric films with a macroscopically amorphous structure have shown an improved W_(rec) andη,but their much lower polarizability demands an extremely high electric field to achieve such performances,which is undesirable from an economic ***,we propose a strategy to boost the energy storage performances and stability of ferroelectric capacitors simultaneously by constructing a tri-layer film in which a well-crystallized ferroelectric layer was sandwiched by two pseudo-linear dielectric layers with a dominant amorphous *** sol–gel-derived BaTiO_(3)/(Pb,La,Ca)TiO_(3)/BaTiO_(3)(BTO/PLCT/BTO)tri-layer films,we show that the above design is realized via rapid thermal annealing which fully crystallized the middle PLCT layer while left the top/bottom BTO cap layers in a poor crystallization *** sandwiched structure is endowed with an enhanced maximum polarization while a small remnant one and a much-delayed polarization saturation,which corresponds to large W_(rec)≈80 J/cm^(3) and highη≈86%.Furthermore,the film showed an outstanding cycling stability:its W_(rec) andηremain essentially unchanged after 10^(9) electric cycles(DW/W<4%,Dη/η<2%).These good energy storage characteristics have proved the effectiveness of our proposed strategy,paving a way for the utilization of sandwiched films in applications of electric power systems and advanced pulsed-discharge devices.

关键词： energy storage sandwich film amorphous structure nanocrystal cluster stability

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Helium incorporation induced direct-gap silicides

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npj Computational Materials 2021年第1期7卷 809-816页

作者： Shicong Ding Jingming Shi Jiahao Xie Wenwen Cui Pan Zhang Kang Yang Jian Hao Lijun Zhang Yinwei Li Laboratory of Quantum Functional Materials Design and Application School of Physics and Electronic EngineeringJiangsu Normal UniversityXuzhouChina State Key Laboratory of Superhard Materials Key Laboratory of Automobile Materials of MOEand College of Materials Science and EngineeringJilin UniversityChangchunChina Shandong Key Laboratory of Optical Communication Science and Technology School of Physical Science and Information Technology of Liaocheng UniversityLiaochengChina

The search of direct-gap Si-based semiconductors is of great interest due to the potential application in many technologically relevant *** work examines the incorporation of He as a possible route to form a direct band gap in *** predictions and first-principles calculations show that He and Si,at high pressure,form four dynamically stable phases of Si_(2)He(oP36-Si_(2)He,tP9-Si_(2)He,mC18-Si_(2)He,and mC12-Si_(2)He).All phases adopt host–guest structures consisting of a channel-like Si host framework filled with He guest *** Si frameworks in oP36-Si2He,tP9-Si2He,and mC12-Si_(2)He could be retained to ambient pressure after removal of He,forming three pure Si *** them,oP36-Si_(2)He and mC12-Si_(2)He exhibit direct band gaps of 1.24 and 1.34 eV,respectively,close to the optimal value(~1.3 eV)for solar cell *** shows that mC12-Si_(2)He with an electric dipole transition allowed band gap possesses higher absorption capacity than cubic diamond Si,which makes it to be a promising candidate material for thin-film solar cell.

关键词： allowed filled ambient

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Evaluation of stress voltage on off-state time-dependent breakdown for GaN MIS-HEMT with SiNx gate dielectric

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Chinese physics B 2020年第10期29卷 444-450页

作者： Tao-Tao Que Ya-Wen Zhao Qiu-Ling Qiu Liu-An Li Liang He Jin-Wei Zhang Chen-Liang Feng Zhen-Xing Liu Qian-Shu Wu Jia Chen Cheng-Lang Li Qi Zhang Yun-Liang Rao Zhi-Yuan He Yang Liu School of Electronics and Information Technology Sun Yat-Sen UniversityGuangzhou 510275China School of Materials Science and Engineering.Sun Yat-Sen University Guangzhou 510275China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory No.5 Electronics Research Institute of the Ministry of Industry and Information TechnologyGuangzhou 510610China

Stress voltages on time-dependent breakdown characteristics of GaN MIS-HEMTs during negative gate bias stress (with VGS 0, VS = 0) are investigated. For negative bias stress, the breakdown time distribution (β) decr... 详细信息

Stress voltages on time-dependent breakdown characteristics of GaN MIS-HEMTs during negative gate bias stress (with VGS < 0, VD = VS = 0) and off-state stress (VG < VTh, VDS > 0, VS = 0) are investigated. For negative bias stress, the breakdown time distribution (β) decreases with the increasing negative gate voltage, while β is larger for higher drain voltage at off-state stress. Two humps in the time-dependent gate leakage occurred under both breakdown conditions, which can be ascribed to the dielectric breakdown triggered earlier and followed by the GaN layer breakdown. Combining the electric distribution from simulation and long-term monitoring of electric parameter, the peak electric fields under the gate edges at source and drain sides are confirmed as the main formation locations for per-location paths during negative gate voltage stress and off-state stress, respectively.

关键词： gallium nitride LPCVD-SiNx MIS-HEMT time-dependent breakdown negative gate bias offstate stress

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Ultrafast Nonlinear Optical Response of Two-dimensional MoS_(2)/Bi_(2)Te_(3) Heterostructure

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Chinese Journal of Structural Chemistry 2021年第11期40卷 1496-1504,1408页

作者： DONG Jun-Hao PAN Jia YE Chen-Yu WANG Ru HUANG Yong-Feng ZHENG Jing-Ying ZHAN Hong-Bing WANG Qian-Ting School of Materials Science and Engineering Fujian University of TechnologyFuzhou 350118China Fujian Provincial Key Laboratory of Advanced Materials Processing and Application Fuzhou 350108China School of Electronic Electrical Engineering and PhysicsFujian University of TechnologyFuzhou 350118China College of Materials Science and Engineering Fuzhou UniversityFuzhou 350118China

Controlled stacking of different two-dimensional(2D)atomic layers hold great promise for significantly optimizing the optical properties of 2D materials and broadening their ***,vertical 2DMoS_(2)/Bi_(2)Te_(3) heterostructures with high crystallinity and optical quality have been successfully constructed,through drop-casting 2D Bi_(2)Te_(3) flakes on chemical vapor deposition(CVD)-grown MoS_(2) *** on our homebuilt micro Z-scan and pump-probe measurement,we precisely investigated and compared the nonlinear optical(NLO)performance of an individual micro-sized MoS_(2) flake before and after stacking 2D Bi_(2)Te_(3) ***,layer-dependent ultrafast carrier dynamics of CVD-grown MoS_(2) flakes were also *** to the efficient charge transfer from the monolayer(1 L)MoS_(2) to 2D Bi_(2)Te_(3),the 1L MoS_(2)/Bi_(2)Te_(3) heterostructure demonstrated excellent NLO performance with superior nonlinear saturable absorption coefficient and ultrashort carrier *** work greatly enriches our understanding of 2D heterostructure and paves the way for designing new type of tunable 2D photonics materials by combining the optical advantages of different 2D materials.

关键词： two-dimensional materials nonlinear optics ultrafast response

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reliability evaluation of supercapacitors based on pseudo-failure calendar lifetime distribution

Reliability evaluation of supercapacitors based on pseudo-fa...

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12th International Conference on Quality, reliability, Risk, Maintenance, and Safety Engineering (QR2MSE 2022)

作者： P. Yu G. Wang Y. Huang C. Huang G. Lu School of Electric Power Engineering South China University of Technology Guangzhou People's Republic of China Laboratory of Science and Technology on Reliability Physics and Application of Electronic Component China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou People's Republic of China Technology and Planning Office China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou People's Republic of China

Supercapacitors are new types of electrical energy storage components with an electric double layer. Ageing characteristics, lifetime and reliability evaluation are of great significance for quality evaluation and rational use. This paper focused on the pseudo-failure calendar lifetime distribution and reliability evaluation of supercapacitors. High-temperature accelerated calendar ageing test of supercapacitors is carried out, and equivalent series resistance and capacitance were tested. Pseudo-lifetime is calculated and distribution is fitted. Fitting results showed that the pseudo-lifetime of supercapacitors is more in line with Weibull distribution. Finally, the reliability curve and its bounds with 95% confidence are made, as a result of the reliability evaluation of supercapacitors.

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Enhanced pyrocatalysis of the pyroelectric BiFeO_(3)/g-C_(3)N_(4) heterostructure for dye decomposition driven by cold–hot temperature alternation

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Journal of Advanced Ceramics 2021年第2期10卷 338-346页

作者： Mingzi Chen Yanmin Jia Huamei Li Zheng Wu Tianyin Huang Hongfang Zhang College of Physics and Electronic Information Engineering Zhejiang Normal UniversityJinhua321004China School of Science Xi’an University of Posts and TelecommunicationsXi’an710121China College of Environmental and Chemical Engineering Xi’an Polytechnic UniversityXi’an710048China Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application School of Physical Science and Technology and School of Environmental Science and EngineeringSuzhou University of Science and TechnologySuzhou215009China

The BiFeO_(3)/g-C_(3)N_(4) heterostructure,which is fabricated via a simple mixing–calcining method,benefits the significant enhancement of the pyrocatalytic *** the growth of g-C_(3)N_(4) content in the heterostructure pyrocatalysts from 0 to 25%,the decomposition ratio of Rhodamine B(RhB)dye after 18 cold-hot temperature fluctuation(25-65℃)cycles increases at first and then decreases,reaching a maximum value of~94.2%at 10%while that of the pure BiFeO_(3) is~67.7%.The enhanced dye decomposition may be due to the generation of the internal electric field which strengthens the separation of the positive and negative carriers and further accelerates their *** intermediate products in the pyrocatalytic reaction also have been detected and confirmed,which proves the key role of the pyroelectric effect in realizing the dye decomposition using BiFeO_(3)/g-C_(3)N_(4) heterostructure *** pyroelectric BiFeO_(3)/g-C_(3)N_(4) heterostructure shows the potential application in pyrocatalytically degrading dye wastewater.

关键词： pyroelectric material BiFeO_(3) g-C_(3)N_(4) heterostructure pyrocatalysis

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通过激光/分散系耦合增强氧化石墨烯的还原效果:实现大规模、低缺陷的石墨烯用于无折痕散热膜在先进柔性电子器件中的应用

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science Bulletin 2024年第11期69卷 1716-1727页

作者：孙佳惟熊雨薇贾海洋韩龙祥叶雯孙立涛 College of Electronic and Information Engineering Suzhou University of Science and TechnologySuzhou 215009China SEU-FEI Nano-Pico Center Key Laboratory of MEMS of Ministry of EducationSoutheast UniversityNanjing 210096China School of Physics and New Energy Xuzhou University of TechnologyXuzhou 221018China Jiangsu Industrial Intelligent and Low-carbon Technology Engineering Center Suzhou 215000China Suzhou Key Laboratory of Intelligent Low-carbon Technology Application Suzhou 215000China College of Chemistry and Life Sciences Suzhou University of Science and TechnologySuzhou 215009China

The advancement of flexible electronics demands improved components,necessitating heat dissipation membranes(HDMs)to exhibit high thermal conductivity while maintaining structural integrity and performance stability even after extensive ***,we have devised a laser-modulated reduction technique for graphene oxide(GO),enabling the fabrication of high-quality,large-scale,lowdefect graphene,which yields high-performance HDMs after orderly *** work underscores the crucial role of the laser wavelength and dispersion liquid's coupling intensity in influencing the morphology and properties of *** coupling effect and energy conversion are realized when a laser of 1064 nm wavelength irradiates a triethylene glycol(TEG)/N,N-Dimethylformamide(DMF)*** unique synergy generates high transient energy,which facilitates the deprotonation process and ensures a swift,comprehensive GO *** contrast to conventional water-based laser reduction methods,the accelerated reaction magnifies the size of the graphene sheets by mitigating the ablation *** membrane construction with an ordered structure,the corresponding membrane exhibits a high thermal conductivity of 1632 W m^(-1)K^(-1),requiring only~1/10 of the total preparation time required by other reported ***,the resulting HDM demonstrates superior resilience against creasing and folding,maintaining excellent smoothness and negligible reduction in thermal conductivity after violent *** combination of exceptional flexibility and thermal conductivity in HDMs paves the way for long-term practical use in the flexible electronics industry.

关键词： Laser-irradiation technology System coupling Graphene-based Heat dissipation membranes Crease-free

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Temperature Hysteresis Effect of Q-factor in Vacuum Packaged MEMS Device 21

Temperature Hysteresis Effect of Q-factor in Vacuum Packaged...

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21st International Conference on electronic Packaging technology, ICEPT 2020

作者： Dong, Xianshan Huang, Qinwen Lai, Ping Yang, Shaohua Su, Wei Huang, Yun No.5 Electronics Research Institute of the Ministry of Industry and Information Technology Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China

ISBN: (纸本)9781728168265

Vacuum packaging technology is commonly used in MEMS device to improve performance. Yet, the temperature influence of vacuum packaging on the MEMS device is rarely studied. In this paper, temperature hysteresis effect of Q-factor in vacuum packaged MEMS device was studied. The experimental test was carried out, and the mechanism was also investigated. Four kinds of MEMS gyroscope with different pressure were designed, and their temperature characteristic of Q-factor were measured. The results show that the packaged pressure influences the temperature hysteresis of Q-factor greatly, and lower pressure packaging would cause larger temperature hysteresis of Q-factor. This study is helpful for designer to understand the influence of vacuum packaging and improve temperature performance for vacuum packaged MEMS device. © 2020 IEEE.

关键词： Hysteresis

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Failure Analysis and Modeling of Blind Vias Crack in BGA-PCB Assemblies

Failure Analysis and Modeling of Blind Vias Crack in BGA-PCB...

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International Conference on (ICEPT) electronic Packaging technology

作者： Ying Shi Shaohua Yang Fugen Wu Huafeng Dong State Key Laboratory of Precision Electronic Manufacturing Technology and Equipment and School of Materials and Energy Guangdong University of Technology Guangzhou P.R. China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory No.5 Electronics Research Institute of Ministry of Industry and Information Technology (MIIT) Guangzhou P.R. China School of Physics and Optoelectronic Engineering Guangdong University of Technology Guangzhou P.R. China

electronic products and devices including personal computers, servers and mobile phones are moving towards high performance and high integration to meet the demands of users. As the core components in electronic products and devices, the reliability and stability of printed circuit board assemblies (PCBAs) are urgently needed to be ensured. Inspired by these requirements, printed circuit board assemblies with ball grid arrays (BGAs), which have better electrical performance, are becoming the preferred choice for many electronic products and devices. Herein, the morphology and chemical composition of blind via cracks in BGA-PCBAs were mainly investigated by scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) to determine their failure mechanism. Tthe temperature distribution, stress and strain at various power levels were analyzed by performing finite element simulations of typical BGA solder ball and blind via structures. Our findings indicated that the stresses concentrated at the connection between the blind via and the inner copper layer, which coincided with the failure site of the blind via. Meanwhile, the shear force would increase with the enhancement of chip power consumption and blind via temperature. Besides, this study provides critical insights for ensuring the reliability of BGA-PCBA, which will help manufacturers improve the fabricating methods of BGA-PCBs, thus greatly promoting the performance and stability of electronic products and devices.

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Enhanced Responsivity of Solar Blind Ultraviolet Photodetector by PEALD Deposited Zn-Doped Ga2O3Thin Films

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IEEE Transactions on Electron Devices 2024年第1期71卷 664-669页

作者： Fan, Hui-Chen Wang, Chen Ruan, Yu-Jiao Shen, Kun-Ching Wu, Wan-Yu Wuu, Dong-Sing Lai, Feng-Min Lien, Shui-Yang Zhu, Wen-Zhang Xiamen Institute of Measurement and Testing National Measurement and Testing Center for Flat Panel Display Industry Xiamen361024 China Fuzhou University College of Physics and Information Engineering Fuzhou350108 China National United University Department of Materials Science and Engineering Miaoli36063 Taiwan National Chi Nan University Department of Applied Materials and Optoelectronic Engineering Nantou54561 Taiwan Xiamen University of Technology Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology School of Opto-Electronic and Communication Engineering Xiamen361026 China Da-Yeh University Department of Biomedical Engineering Changhua51591 Taiwan

In this article, the tunable Zn-doped Ga2O3 films were obtained by introducing ZnO intercalation during the film deposition using plasma-enhanced atomic layer deposition (PEALD). The effect of the ZnO cycle ratio on the performance of solar-blind photodetectors (PDs) was first analyzed. Compared to the pure Ga2O3, an obviously enhanced performance of Zn-doped Ga2O3 films PDs was observed by the introduction of Zn dopants, especially photocurrent or responsivity, even if the light intensity is low. A high sensitivity of Zn-doped Ga2O3 PD has been achieved with superior photoelectric characteristics for an extremely low dark current of 2.22 × 10-13 A, an ultrahigh light ON/ OFF current ratio of 2.89 × 106, and a satisfactory responsivity of 104 mA/W when the ZnO cycle ratio is 5%. The above excellent results imply that the Zn-doped Ga2O3 PD can be greatly beneficial to the application in deep-ultraviolet (DUV) detection. © 1963-2012 IEEE.

关键词： II-VI semiconductors

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