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SSRN 2024年

作者： Niu, Xiang Jiang, Yuleng Liang, Wei Liu, Huanwei Jian, Xiaodong Chen, Xianyi Zeng, Wenhan Xu, Mingtao Qie, Dan Zhu, Zichun Liu, Yufeng Tang, Yi Gong, Weiping Zhao, Xiaobo Yao, Yingbang Liang, Bo Tao, Tao Lu, Sheng-Guo Guangdong Provincial Research Center on Smart Materials and Energy Conversion Devices Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter School of Materials and Energy Guangdong University of Technology Guangzhou510006 China School of integrated Circuits Guangdong University of Technology Guangzhou510006 China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory The 5th Electronics Research Institute The Ministry of Industry and Information Technology Guangzhou510610 China School of Physics and Optoelectronic Engineering Guangdong University of Technology Guangzhou510006 China Department of Materials Science and Engineering National University of Singapore 9 Engineering Drive 1 Singapore117575 Singapore Guangdong Provincial Key Laboratory of Electronic Functional Materials and Devices Huizhou University Guangdong Huizhou516001 China

Developing ecologically benign lead-free dielectrics with overall outstanding energy storage properties (ESP) is a fundamentally significant demand and challenge for the applications in pulse power systems. Herein, a new type of lead-free (0.74-x)Bi0.5Na0.5TiO3-0.06BaTiO3-0.2SrTiO3-xBi(Mg0.5Zr0.5)O3 (NBT-xBMZ) relaxor ferroelectric thick film ceramics were designed and prepared via compositional and microstructural optimization. Doping Bi(Mg0.5Zr0.5)O3 (BMZ) effectively widened the bandgap, introduced polar nanoregions, enhanced the relaxor ferroelectric characteristics, improved the impedances, and ultimately improved the dielectric breakdown strength (DBS) as well as the ESP. As confirmed by both the selected area electron diffraction patterns and the Rietveld refinement of X-ray diffraction patterns, multiphase coexistence structure was successfully constructed, resulting in merged polarization and delayed polarization saturation. Multiphase coexistence structure, pinched polarization-electric field hysteresis loops and ultrahigh DBS collectively boost the ESP. Remarkably, a recoverable energy storage density of 15.79 J/cm3 and an energy storage efficiency of 92.86% were achieved in NBT-0.22BMZ thick film. Benefiting from the microstructural optimization, excellent thermal stability (20–160 °C), frequency stability (1–200 Hz), and fatigue endurance (> 104 cycles) were realized for the same composition. Additionally, the NBT-0.22BMZ thick film also exhibited a large power density of 582.47 MW/cm3 and an ultrafast discharge speed of ~44.0 ns. This work provides a novel strategy to develop next-generation dielectric capacitors with superior energy storage properties for applications in advanced pulse power systems. © 2024, The Authors. All rights reserved.

关键词： Polarization

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Highly Efficient Ld-Pumped High Power 718.5 Nm Pr3+:Ylf Laser

SSRN

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SSRN 2024年

作者： Cai, Zhiping Zhang, Zheng Yuan, Wei Fang, Run Li, Zhuang Xu, Huiying Department of Electronic Engineering Xiamen University Xiamen361005 China Fujian Key Laboratory of Ultrafast Laser Technology and Application Xiamen University Xiamen361005 China Academic Affairs Office Guizhou Normal University Guiyang550001 China School of Physics and Electronic Science Guizhou Normal University Guiyang550001 China

We reported a continuous-wave (CW) deep red laser at 718.5 nm in a Pr3+:YLF crystal pumped by an InGaN laser diode. A maximum output power of 3.95 W with an average slope efficiency of 41.3% was achieved at 718.5 nm. The full width at half maximum (FWHM) of the laser spectrum was 0.82 nm. To the best of our knowledge, the laser output power and slope efficiency were both the highest values that have been reported so far. In addition, the theoretical model was built to interpret the input-output power characteristics, and the simulated results were essentially consistent with the experimental results. © 2024, The Authors. All rights reserved.

关键词： Efficiency

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Hardware Trojan Detection Based on SRC

Hardware Trojan Detection Based on SRC

引用

Youth Academic Annual Conference of Chinese Association of Automation (YAC)

作者： Chen Sun Liye Cheng Liwei Wang Yun Huang Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China

ISBN: (数字)9781728176840

ISBN: (纸本)9781728176857

The security of integrated circuits (IC) plays a very significant role on military, economy, communication and other industries. Due to the globalization of the integrated circuit (IC) from design to manufacturing process, the IC chip is vulnerable to be implanted malicious circuit, which is known as hardware Trojan (HT). When the HT is activated, it will modify the functionality, reduce the reliability of IC, and even leak confidential information about the system and seriously threatens national security. The HT detection theory and method is hotspot in the security of integrated circuit. However, most methods are focusing on the simulated data. Moreover, the measurement data of the real circuit are greatly affected by the measurement noise and process disturbances and few methods are available with small size of the Trojan circuit. In this paper, the problem of detection was cast as signal representation among multiple linear regression and sparse representation-based classifier (SRC) were first applied for Trojan detection. We assume that the training samples from a single class do lie on a subspace, and the test samples can be represented by the single class. The proposed SRC HT detection method on real integrated circuit shows high accuracy and efficiency.

关键词： Integrated circuits Training Size measurement Hardware Trojan horses Security Noise measurement

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Stretch-Tolerant Interconnects Derived from Silanization-Assisted Capping Layer Lamination for Smart Skin-Attachable electronics

SSRN

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SSRN 2024年

作者： Zheng, Zetao Huang, Zhuobin Zhang, Nian Liu, Shiyu Zhao, Lingyu Li, Xingyi Wang, Liu Xu, Fang Shi, Jidong Shenzhen Key Laboratory of Ultraintense Laser and Advanced Material Technology Center for Intense Laser Application Technology College of Engineering Physics Shenzhen Technology University Shenzhen518118 China School of Information and Communication Engineering University of Electronic Science and Technology of China Chengdu611731 China CAS Key Laboratory of Mechanical Behavior and Design of Materials Department of Modern Mechanics University of Science and Technology of China Hefei230026 China Department of Materials Science and Engineering Southern University of Science and Technology Shenzhen518055 China

Flexible strain sensor arrays hold great promise in on-skin monitoring of human signals and activities. Despite the development of strain-sensitive materials and patterning technologies for improved performance and device integration, the metal film serving as interconnects is always vulnerable upon stretch, which hinders the operation under large strains. Herein, a novel strategy is developed for achieving stretch-tolerant interconnects within a sensor array. Through introducing a high-modulus capping layer for the deposition of Ag interconnects, followed by silanization-assisted lamination onto the stretchable substrate where strain-sensitive graphene patches are inkjet-printed, the deformation of Ag interconnects is largely suppressed upon the global strain of the device, and a high working range of 40% strain is achieved. Moreover, the chemical bonding between the capping layer and the stretchable substrate ensures a stable contact between the electrode and the sensitive layer under vigorous bending. The as-prepared sensor array demonstrates high sensitivity (gauge factor (GF) > 100) within a wide range (18%), and could reliably monitor various physiological signals and human activities. A machine learning-assisted wearable gesture recognition system is developed based on the sensor array and a convolutional neural network (CNN), which could distinguish from 10 defined gestures with 100% accuracy after 14 training processes. The facile and effective strategy could be universally applied for metal interconnects protection under stretch, and dramatically facilitate the design of smart flexible electronics. © 2024, The Authors. All rights reserved.

关键词： Substrates

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Electromagnetic Pattem Extraction and Classification of Integrated Circuit under Different Operation State 12

Electromagnetic Pattem Extraction and Classification of Inte...

引用

12th International Workshop on the Electromagnetic Compatibility of Integrated Circuits, EMC COMPO 2019

作者： Chen, Rongquan Wang, Yulong Zhang, Hang Li, Zeyi Shao, Weiheng Fang, Wenxiao Xiao, Meizhen Wang, Lei Tian, Xinxin He, Zhiyuan Liu, Hengzhou Xu, Xuecheng Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China

ISBN: (纸本)9781728142616

Extracting electromagnetic patterns by near field scanning can provide concrete information about a device under test (DUT), which benefits a lot when locating EMI sources. In this paper, we extracted the electromagnetic pattern of DUT under different operation state and classify the pattern with a machine learning algorithm for simplifying post-process procedure and better EMC engineering. The result showed different operation state lead to different electromagnetic emission. © 2019 IEEE.

关键词： Electromagnetic compatibility

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The Effect of Mn Doping on the Electrical and Magnetic Properties of Cr2te3 Thin Films

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SSRN 2024年

作者： Luo, Fu-Sheng Zhang, Jie-Rui Wang, Zhao-Cai Tang, Fang Fang, Yong Zhou, Wei-Ping School of Physics and Electronic Information Gannan Normal University Ganzhou341000 China School of Materials and Mechanic & Electrical Engineering Jiangxi Science and Technology Normal University Nanchang330038 China Jiangsu Laboratory of Advanced Functional Materials Department of Physics Changshu Institute of Technology Changshu215500 China School of Physics and Materials Science Nanchang University Nanchang330031 China Fujian Provincial Key Laboratory of Advanced Materials Processing and Application China

Mn doped Cr2-xMnxTe3 thin films were prepared by molecular beam epitaxy technology. The effect of Mn doping concentration on the structural, morphological, electrical and magnetic performance of Cr2Te3 thin films were detailed analyzed. By varying the beam current of the Mn source, it is found that Mn can be doped into the Cr2Te3 thin film when the Mn source temperature is lower than 700 ℃, while the Mn tends to bind with Te as MnTe crystals for Mn source temperature higher than 700 ℃. Cr2-xMnxTe3 films all exhibt strong ferromagnetism with a Curie temperature of around 175 K. The magnetization of the films decreases with increasing Mn doping concentration. A notable negative magnetoresistance effect is observed with the highest MR ratio about -60% in the vicinity of the Curie temperature. A clear topological Hall signal was observed in the sample with a Mn source temperature of 700 ℃ at low temperature (2 K). These results imply that the electrical and magnetic properties of Cr2Te3 materials can be effectively controlled by doping to meet the practical needs of different fields. © 2024, The Authors. All rights reserved.

关键词： Thin films

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Degradation behavior and mechanism of SiC power MOSFETs by total ionizing dose irradiation under different gate voltages

Degradation behavior and mechanism of SiC power MOSFETs by t...

引用

Workshop on Wide Bandgap Power Devices and applications in Asia (WiPDA Asia)

作者： Kexin Gao Yiqiang Chen Shuaizhi Zheng Min Liao Xinbing Xu Meng Lu Xiangtan University Hunan China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory The No.5 Electronics Research Institute of the Ministry of Industry and Information Technology Guangzhou Guangdong China

ISBN: (纸本)9781665448178

In this work, the degradation behavior of the SiC power MOSFETs under total ionizing dose (TID) irradiation at different gate voltages was investigated. To simulate the radiation environment, 60CO was used as the $\gamma$ -ray source, the dose rate was 50rad/s, and the cumulative absorbed dose was 1M Rad. The experimental results show that when a gate voltage is impressed to the test device, the threshold voltage is obviously negative shift, the output characteristic and capacitance curve also have negative shift phenomenon. Meanwhile, the device with positive gate voltage has more obvious shift than negative bias voltage. Furthermore, the blocking characteristics of the device had a noticeable change after irradiation, it means that the TID effect has an effect on the body diode. Changes in gate capacitance were also analyzed. The reason for this degradation could be that the high-energy particle radiation exciting plenty of electron-hole pairs in the oxide layer of MOSFET, the electrons flow out of the metal electrode after radiation, and the holes are captured by the oxide layer to form a new interface trap charge. This paper may have some reference value for the application of SiC power MOSFET in aerospace.

关键词： Degradation Performance evaluation MOSFET Silicon carbide Photonic band gap Asia Logic gates

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Elemental topological ferroelectrics and polar metals of few-layer materials

arXiv

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arXiv 2023年

作者： Zhang, Hu Zhao, Lulu Zhang, RuiFeng Jin, Chendong Lian, Ruqian Gong, Peng-Lai Wang, RuiNing Wang, JiangLong Shi, Xing-Qiang Key Laboratory of Optic-Electronic Information and Materials of Hebei Province Research Center for Computational Physics of Hebei Province Hebei Key Laboratory of High-precision Computation and Application of Quantum Field Theory College of Physics Science and Technology Hebei University Baoding071002 China

Ferroelectricity can exist in elemental phases as a result of charge transfers between atoms occupying inequivalent Wyckoff positions. We investigate the emergence of ferroelectricity in two-dimensional elemental materials with buckled honeycomb lattices. Various multi-bilayer structures hosting ferroelectricity are designed by stacking-engineering. Ferroelectric materials candidates formed by group IV and V elements are predicted theoretically. Ultrathin Bi films show layer-stacking-dependent physical properties of ferroelectricity, topology, and metallicity. The two-bilayer Bi film with a polar stacking sequence is found to be an elemental topological ferroelectric material. Three and four bilayers Bi films with polar structures are ferroelectric-like elemental polar metals with topological nontrivial edge states. For Ge and Sn, trivial elemental polar metals are predicted. Our work reveals the possibility of design two-dimensional elemental topological ferroelectrics and polar metals by stacking-engineering. © 2023, CC BY.

关键词： Ferroelectricity

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Analysis of GaN HEMT Degradation under RF Overdrive Stress

Analysis of GaN HEMT Degradation under RF Overdrive Stress

引用

Workshop on Wide Bandgap Power Devices and applications in Asia (WiPDA Asia)

作者： YuHan Xie RongSheng Chen Chang Liu YiQiang Chen Yan Ren The School of Electronic and Information Engineering South China University of Technology Guangzhou China The Science and Technology on Reliability Physics and Application of Electronic Component Laboratory The No.5 Electronics Research Institute of the Ministry of Industry and Information Technology Guangzhou China

ISBN: (纸本)9781665448178

This work concentrated at the degradation characteristics of GaN HEMT devices when exposed to RF overdrive stress. According to results of the experiment, the drain current of GaN HEMT decreases by 35.6% from 877 mA to 564mA after RF overstress. Moreover, after the experiment, the threshold voltage has a 0.26-V positive shift, and the maximum transconductance decreases. The gate leakage current increases by three times more than that of original ones. The gate-lag characteristics also deteriorates with the increase of experimental time. After measuring the high frequency performance, the return loss of the device degrades. Based on the measurement of leakage current, the height of Schottky barrier before and after the experiment was calculated and the captured charge density was extracted as ${1.11\,\times \,10^{14}\,cm^{2}}$ by combining with the threshold voltage drift.

关键词： Radio frequency Degradation Current measurement Schottky barriers HEMTs Threshold voltage Loss measurement

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Negative gate bias stress effects on conduction and low frequency noise characteristics in p-type poly-Si thin-film transistors

引用

Chinese physics B 2019年第8期28卷 397-402页

作者： Chao-Yang Han Yuan Liu Yu-Rong Liu Ya-Yi Chen Li Wang Rong-Sheng Chen School of Electronic and Information Engineering South China University of TechnologyGuangzhou 510640China School of Automation Guangdong University of TechnologyGuangzhou 510006China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory CEPREIGuangzhou 510610China

The instability of p-channel low-temperature polycrystalline silicon thin film transistors(poly-Si TFTs)is investigated under negative gate bias stress(NBS)in this ***,a series of negative bias stress experiments is performed,the significant degradation behaviors in current-voltage characteristics are *** the stress voltage decreases from-25 V to-37 V,the threshold voltage and the sub-threshold swing each show a continuous shift,which is induced by gate oxide trapped charges or interface ***,low frequency noise(LFN)values in poly-Si TFTs are measured before and after negative bias *** flat-band voltage spectral density is extracted,and the trap concentration located near the Si/SiO2 interface is also ***,the degradation mechanism is discussed based on the current-voltage and LFN results in poly-Si TFTs under NBS,finding out that Si-OH bonds may be broken and form Si*and negative charge OH-under negative bias stress,which is demonstrated by the proposed negative charge generation model.

关键词： polycrystalline silicon thin film transistor negative bias stress low frequency noise

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