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Workshop on Wide Bandgap Power Devices and applications in Asia (WiPDA Asia)

作者： YuHan Xie RongSheng Chen Chang Liu YiQiang Chen Yan Ren The School of Electronic and Information Engineering South China University of Technology Guangzhou China The Science and Technology on Reliability Physics and Application of Electronic Component Laboratory The No.5 Electronics Research Institute of the Ministry of Industry and Information Technology Guangzhou China

ISBN: (纸本)9781665448178

This work concentrated at the degradation characteristics of GaN HEMT devices when exposed to RF overdrive stress. According to results of the experiment, the drain current of GaN HEMT decreases by 35.6% from 877 mA to 564mA after RF overstress. Moreover, after the experiment, the threshold voltage has a 0.26-V positive shift, and the maximum transconductance decreases. The gate leakage current increases by three times more than that of original ones. The gate-lag characteristics also deteriorates with the increase of experimental time. After measuring the high frequency performance, the return loss of the device degrades. Based on the measurement of leakage current, the height of Schottky barrier before and after the experiment was calculated and the captured charge density was extracted as ${1.11\,\times \,10^{14}\,cm^{2}}$ by combining with the threshold voltage drift.

关键词： Radio frequency Degradation Current measurement Schottky barriers HEMTs Threshold voltage Loss measurement

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An Efficient Machine Learning-Enhanced DTCO Framework for Low-Power and High-Performance Circuit Design

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Journal of Information and Intelligence 2025年

作者： Mingyang Liu Zhengguang Tang Hailong You Cong Li Guangxin Guo Zeyuan Wang Linying Zhang Xingming Liu Yu Wang Yong Dai Geng Bai Xiaoling Lin Institute of Microelectronics Xidian University Xi’an 710071 China SMiT Group Fuxin Technology Limited Shenzhen 518000 China The Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou Guangdong Province China

The standard Design technology Co-Optimization (DTCO) involves frequent interactions between circuit design and process manufacturing, which requires several months. To assist designers in establishing a bridge between device parameters and circuit metrics efficiently, and provide guidance for parameter optimization in the early stages of circuit design. In this paper, we propose an efficient machine learning (ML)-enhanced DTCO framework. This framework achieves the co-optimization of device parameters and circuit metrics. We select the gate metal work function (WF) as the parameter to validate the effectiveness of our framework. And the ridge regression approach is used to bypass TCAD simulation, compact model extraction and cell library characterization. We reduces time consumption by at least 92% compared to traditional DTCO framework, while ensuring that errors of delay, internal power consumption and leakage power below 4ps, 0.035mJ, and 0.4uW, respectively. By adjusting the WF, we achieved a better balance between circuit delay and power consumption. This work contributes to designers exploring a broader design space and achieving a efficient DTCO flow.

关键词： Machine learning DTCO Cell library Work function Parameter extraction

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Wave soldering structure optimization simulation of multilayer ceramic capacitors

Wave soldering structure optimization simulation of multilay...

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2020 International Conference on Applied physics and Computing, ICAPC 2020

作者： Su, Wei Luo, Wenhao Li, Junkui Liu, Renhuai MOE Key lab of Disaster Forecast and Control in Engineering Guangzhou510632 China Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou510610 China School of Mechanics and Construction Engineering Jinan University Guangzhou510632 China

In this paper, the thermal analysis and structural analysis of MLCC are carried out by using the commercial finite element software ANSYS. By comparing the thermal-mechanical analysis results of the structural optimization models of different schemes, the optimal optimization scheme is found. The model calculated the time required for MLCC to reach temperature stability considering thermal convection and heat conduction, and obtained the thermal deformation and thermal stress distribution of MLCC element. Based on the analysis results of MLCC original model, the thermal analysis under different wave soldering temperatures was carried out. Based on the simulated transient results, the structure and materials of MLCC key components were optimized. The results provide a basis for the optimal design of MLCC. © 2020 Institute of physics Publishing. All rights reserved.

关键词： Thermoanalysis

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Negative gate bias stress effects on conduction and low frequency noise characteristics in p-type poly-Si thin-film transistors

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Chinese physics B 2019年第8期28卷 397-402页

作者： Chao-Yang Han Yuan Liu Yu-Rong Liu Ya-Yi Chen Li Wang Rong-Sheng Chen School of Electronic and Information Engineering South China University of TechnologyGuangzhou 510640China School of Automation Guangdong University of TechnologyGuangzhou 510006China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory CEPREIGuangzhou 510610China

The instability of p-channel low-temperature polycrystalline silicon thin film transistors(poly-Si TFTs)is investigated under negative gate bias stress(NBS)in this ***,a series of negative bias stress experiments is performed,the significant degradation behaviors in current-voltage characteristics are *** the stress voltage decreases from-25 V to-37 V,the threshold voltage and the sub-threshold swing each show a continuous shift,which is induced by gate oxide trapped charges or interface ***,low frequency noise(LFN)values in poly-Si TFTs are measured before and after negative bias *** flat-band voltage spectral density is extracted,and the trap concentration located near the Si/SiO2 interface is also ***,the degradation mechanism is discussed based on the current-voltage and LFN results in poly-Si TFTs under NBS,finding out that Si-OH bonds may be broken and form Si*and negative charge OH-under negative bias stress,which is demonstrated by the proposed negative charge generation model.

关键词： polycrystalline silicon thin film transistor negative bias stress low frequency noise

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Predictability of real temporal networks

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National science Review 2020年第5期7卷 929-937页

作者： Disheng Tang Wenbo Du Louis Shekhtman Yijie Wang Shlomo Havlin Xianbin Cao Gang Yan School of Electronic and Information Engineering Beihang University Shanghai Institute of Intelligence Science and Technology Tongji University Network Science Institute Northeastern University Department of Physics Bar Ilan University CAS Center for Excellence in Brain Science and Intelligence Technology Chinese Academy of Sciences National Engineering Laboratory of Big Data Application Technologies of Comprehensive Transportation School of Physics Science and Engineering Tongji University

Links in most real networks often change over time. Such temporality of links encodes the ordering and causality of interactions between nodes and has a profound effect on network dynamics and *** evidence has shown that the temporal nature of links in many real-world networks is not ***, it is challenging to predict temporal link patterns while considering the entanglement between topological and temporal link patterns. Here, we propose an entropy-rate-based framework, based on combined topological–temporal regularities, for quantifying the predictability of any temporal network. We apply our framework on various model networks, demonstrating that it indeed captures the intrinsic topological–temporal regularities whereas previous methods considered only temporal aspects. We also apply our framework on 18 real networks of different types and determine their predictability. Interestingly,we find that, for most real temporal networks, despite the greater complexity of predictability brought by the increase in dimension, the combined topological–temporal predictability is higher than the temporal predictability. Our results demonstrate the necessity for incorporating both temporal and topological aspects of networks in order to improve predictions of dynamical processes.

关键词： temporal network predictability network entropy predictive algorithm

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Degradation mechanism of D-mode GaN HEMT based on high temperature reverse bias stress

Degradation mechanism of D-mode GaN HEMT based on high tempe...

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Workshop on Wide Bandgap Power Devices and applications in Asia (WiPDA Asia)

作者： Meng Lu Yiqiang Chen Min Liao Chang Liu Shuaizhi Zheng Kexin Gao Xiangtan University Xiangtan China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory The No.5 Electronics Research Institute of the Ministry of Industry and Information Technology Guangzhou Guangzhou China

ISBN: (纸本)9781665448178

This paper systematically discusses the degradation of reliability of depleted gallium nitride devices under short to long-term high temperature reverse bias (HTRB) stress. The electrical parameters of the device during the whole process were obtained by the stress-measure-stress alternation experimental scheme. We believe that the Schottky barrier decreases and the channel conduction resistance increases in the process of high temperature and high field stress. This conclusion can be verified by the gate-lag characteristics. It is a new phenomenon that capacitor degradation can be divided into three stages in the experiment. Further analysis shows that the device has three processes: dielectric layer consumption-AlGaNlGaN layer interface donor state increase-AlGaN barrier layer degradation FN emission and trap-assisted tunneling. There is also a positive correlation between capacitance and gate leakage. When the channel is rapidly depleted, the capacitance decreases gradually and the leakage reaches saturation. Current saturation is mainly because the external voltage has little effect on the longitudinal electric field between Schottky electrode and Ohm electrode, but has a great effect on the transverse electric field. The conclusion of this paper will be of reference significance to the manufacturing process and the life of the device under normal operation.

关键词： Degradation Electrodes Temperature Asia HEMTs Capacitance reliability

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Ultimate strength analysis of three-way pipe considering plastic reinforcement effect

Ultimate strength analysis of three-way pipe considering pla...

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2020 International Conference on Applied physics and Computing, ICAPC 2020

作者： Su, Wei Luo, Wenhao Dong, Xianshan Liu, Renhuai MOE Key lab of Disaster Forecast and Control in Engineering Guangzhou 510632 China Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory China Electronic Product Reliability Environmental Testing Research Institute Guangzhou510610 China School of Mechanics and Construction Engineering Jinan University Guangzhou510632 China

Considering the plastic reinforcement effect in materials, the plastic limit load of the three-way structure is analyzed. ANSYS commercial finite element software is used for numerical simulation. According to the results, the paper discusses the influence of the plastic reinforcement effect on the pipe's plastic ultimate load and failure mode. And the structure is further analyzed to verify the theory and design ideas in actual engineering. For improving the design and safety assessment of the three-way structure, the results provide a theoretical basis and a numerical reference, and the finite element method is economical than the experimental method. At last, it satisfies the accuracy requirements of engineering. © 2020 Institute of physics Publishing. All rights reserved.

关键词： Finite element method

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Ultimate strength analysis of local thinning tee pipe considering plastic strengthening effect

Ultimate strength analysis of local thinning tee pipe consid...

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2020 International Conference on Applied physics and Computing, ICAPC 2020

In this paper, the locally thinned three-way structure under internal pressure is analyzed based on the theory of plastic strengthening effect and limit analysis. A finite element model is presented through ANSYS commercial software to simulate the mechanical properties of orthogonal and oblique three-way structures. This paper systematically analyses how the shape and size of the thinning effect the plastic limit load of the pipe and what is the typical failure mode of plastic failure. Some valuable conclusions are drawn, which provide a useful reference for the design and production of the tee pipe. © 2020 Institute of physics Publishing. All rights reserved.

关键词： Finite element method

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Head injury of CHARM-70 FE model and a comparative study with Hybrid III and GHBMC model

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International Journal of Vehicle Safety 2020年第4期11卷 370-389页

作者： Wu, Hequan Qian, Xiaoyan Ren, Qifan Zhan, Xuehui Key Laboratory of Lightweight and Reliability Technology for Engineering Vehicle Changsha University of Science and Technology Changsha Hunan410004 China Wayne State University DetroitMI48201 United States School of Physics and Electronic Science Changsha University of Science and Technology Changsha Hunan410004 China

In this paper, the Hybrid III FE head model is validated through dummy impact experiments firstly. Then, the CHARM-70 head model is developed, and the structure, head injury and dynamic mechanical response of the model are studied. Subsequently, the GHBMC head model is introduced to compare the dynamic mechanical response of the forehead to the steering wheel edge under the same speed with the Hybrid III and the CHARM-70. The result demonstrates that the CHARM-70 model has high biological fidelity. Meanwhile, due to different material properties, GHBMC model shows the best stiffness and force response, followed by CHARM-70 model, and finally Hybrid III model. Finally, the different setting of material parameters indicates a fine response to the decline rule of bone strength caused by human age, which is meaningful for the development of different age, body and other special population models in the future. © 2020 Inderscience Enterprises Ltd.

关键词： Population statistics

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Coupled-channel D*K*−Ds*ρ interactions and the origin of Tcs¯0(2900)

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Physical Review D 2023年第7期108卷 074006-074006页

作者： Man-Yu Duan Meng-Lin Du Zhi-Hui Guo En Wang Dian-Yong Chen School of Physics Southeast University Nanjing 210094 China School of Physics University of Electronic Science and Technology of China Chengdu 611731 China Department of Physics and Hebei Key Laboratory of Photophysics Research and Application Hebei Normal University Shijiazhuang 050024 China School of Physics and Microelectronics Zhengzhou University Zhengzhou Henan 450001 China Guangxi Key Laboratory of Nuclear Physics and Nuclear Technology Guangxi Normal University Guilin 541004 China Lanzhou Center for Theoretical Physics Lanzhou University Lanzhou 730000 China

Motivated by the recent observation of Tcs¯0(2900)0 and Tcs¯0(2900)++ in the Dsπ invariant mass distributions, we investigate D*K* interactions in a coupled-channel approach. Within the hidden local symmetry formalism, a sizable attraction interaction is found in the J=0 isospin triplet sector that can form a bound or a virtual state, which is consistent with the experimentally observed Tcs¯0(2900). By reproducing a Ds*ρ−D*K* bound/virtual state with the pole mass equal to that of the Tcs¯0(2900) measured by LHCb in the sector (I,J)=(1,0), we determine the unknown parameter in the loop function, and then search for possible poles in the sectors of I=1, J=1, 2 and I=0, J=0, 1, 2. The predicted resonances provide a useful reference for the future experimental studies of the (C,S)=(1,1) systems and can be also helpful to unravel the nature of the Tcs¯0(2900).

关键词： Multiquark bound states Strong interaction

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