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Multipartite quantum correlation, spatially anisotropic coupling, and finite temperature effects in a triangular Ising system with tunable interactions

arXiv

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arXiv 2023年

作者： Ren, Jun Liu, Fang-Man Li, Yan-Chao Ren, Li-Hang Wang, Z.D. Bai, Yan-Kui College of Physics Hebei Key Laboratory of Photophysics Research and Application Hebei Normal University Hebei Shijiazhuang050024 China College of Materials Science and Opto-Electronic Technology University of Chinese Academy of Sciences Beijing100049 China Guangdong-Hong Kong Joint Laboratory of Quantum Matter Department of Physics HK Institute of Quantum Science & Technology The University of Hong Kong Pokfulam Road Hong Kong

We investigate multipartite quantum correlation (MQC), spatially anisotropic coupling, and finite temperature effects in a triangular Ising system with tunable interactions using the exact diagonalization method. We demonstrate that spatially anisotropic coupling serves as an effective means to modulate MQC in the antiferromagnetic ground state, which is achievable with current experimental technologies. Moreover, we explore the interplay between MQC and spatially anisotropic coupling in the Ising system at finite temperatures. Our findings reveal a three-way trade-off relationship among high MQC, robust thermal stability, and anisotropic strength in the triangular Ising system with antiferromagnetic interactions, though the MQC in the ferromagnetic case is quite susceptible to temperature changes. These insights contribute to our understanding of ground state properties and MQC modulation in quantum many-body systems. © 2023, CC BY.

关键词： Ground state

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Inheritance factor on the physical properties in metallic glasses

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Materials Futures 2022年第3期1卷 185-194页

作者： Weiming Yang Jiawei Li Hongyang Li Haishun Liu Jinyong Mo Si Lan Maozhi Li Xun-Li Wang Jürgen Eckert Juntao Huo School of Mechanics and Civil Engineering State Key Laboratory for Geomechanics and Deep Underground EngineeringChina University of Mining and TechnologyXuzhou 221116People’s Republic of China CAS Key Laboratory of Magnetic Materials and Devices Zhejiang Province Key Laboratory of Magnetic Materials and Application TechnologyNingbo Institute of Materials Technology and EngineeringChinese Academy of SciencesNingboZhejiang 315201People’s Republic of China School of Materials and Physics China University of Mining and TechnologyXuzhou 221116People’s Republic of China Herbert Gleiter Institute of Nanoscience Nanjing University of Science and Technology200 Xiaolingwei AvenueNanjing 210094People’s Republic of China Department of Physics City University of Hong Kong83 Tat Chee AvenueHong KongPeople’s Republic of China Department of Physics Beijing Key Laboratory of Opto-electronic Functional Materials and Micro-nano DevicesRenmin University of ChinaBeijing 100872People’s Republic of China Center for Neutron Scattering City University of Hong Kong Shenzhen Research Institute8 Yuexing 1st RoadShenzhen Hi-Tech Industrial ParkShenzhen 518057People’s Republic of China Erich Schmid Institute of Materials Science Austrian Academy of Science8700 LeobenAustria Department of Materials Science Chair of Materials PhysicsMontanuniversität Leoben8700 LeobenAustria

Material genetic engineering can significantly accelerate the development of new *** an important topic in material science and condensed matter physics,the development of metallic glasses(MGs)with specific properties has largely been the result of trial and error since their discovery in ***,property design based on the physical parameters of constituent elements of MGs remains a huge challenge owing to the lack of an understanding of the property inheritance from constitute elements to the resultant *** this work,we report the inherent relationships of the yield strengthσ_(y),Young’s modulus E,and shear Modulus G with the valence electron *** importantly,we reveal that the electronic density of states(EDOSs)at the Fermi surface(E_(F))is an inheritance factor for the physical properties of *** physical properties of MGs are inherited from the specific element with the largest coefficient of electronic specific heat(γ_(i)),which dominates the value of the EDOS at E_(F).This work not only contributes to the understanding of property inheritances but also guides the design of novel MGs with specific properties based on material genetic engineering.

关键词： metallic glasses inheritance factor mechanical properties electronic density of state

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Performance-based reliability Prediction of Power Supply Considering Degradation Uncertainties

Performance-based Reliability Prediction of Power Supply Con...

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System reliability and Safety Engineering (SRSE), International Conference on

作者： Hao Niu Shaohua Yang Wenyuan Liao Canxiong Lai Wen Sun Science and Technology on Reliability Physics and Application of Electronic Component Laboratory No.5 Electronics Research Institute of Ministry of Industry and Information Technology (MIIT) Guangzhou China Key Laboratory of Infrared Imaging Materials and Detectors Shanghai Institute of Technical Physics Shanghai China

ISBN: (纸本)9781665401616

reliability prediction is an effective approach to find weak links and evaluate whether the product satisfies its reliability requirement during the design phase. For the highly reliable product, it is far difficult to predict its reliability level according to the traditional method that largely relies on historical data from reliability handbooks. This paper proposes a performance-based reliability prediction method, which makes use of degradation to reflect product's health conditions. Additionally, a degradation model considering multivariate uncertainties such as operation conditions and parameter randomness is proposed to describe soft failures induced by degradation. A case study of power supply is illustrated to show the effectiveness and feasibility of the proposed method and degradation model for reliability prediction.

关键词： Degradation Uncertainty Power supplies Sensitivity analysis Predictive models Maintenance engineering reliability engineering

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Investigating Neutron-Induced Single Event Transient Characteristics by TCAD Simulations in 65 nm technology and below 3

Investigating Neutron-Induced Single Event Transient Charact...

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3rd International Conference on Radiation Effects of electronic Devices, ICREED 2019

作者： Peng, Chao Lei, Zhifeng Zhang, Zhangang En, Yunfei Huang, Yun China Electronic Product Reliability and Environmental Testing Research Institute Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou510610 China

ISBN: (纸本)9781728173184

The neutron-induced secondary ions can cause single event effects through direct ionization, while the LET values of the secondary ions are quite lower than heavy ions in space. Monte Carlo simulation results show that although the maximum LET of secondary ions produced by different energy neutrons incident into the circuit can reach 25.6 MeV-cm2/mg, 98% of the secondary ions have LET values below 16 MeV-cm2/mg. This may lead to different charge collection mechanisms and single event transient (SET) characteristics for neutron. In this paper, the charge collection mechanisms of neutron secondary ions in a single 65 nm planar bulk transistor are studied through 3D TCAD simulations. The neutron-induced SET characteristics in planar bulk transistor, UTBB FDSOI and bulk/SOI FinFET are also compared. Based on the simulation results, UTBB FDSOI shows the best single event effect immunity compared with planar bulk transistor, bulk FinFET and SOI FinFET under the same technology node. © 2019 IEEE.

关键词： Neutrons

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A compositional ordering-driven morphotropic phase boundary in ferroelectric solid solutions

arXiv

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arXiv 2024年

作者： Shi, Yubai Shan, Yifan Wu, Hongyu Zhong, Zhicheng He, Ri Li, Run-Wei CAS Key Laboratory of Magnetic Materials and Devices Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo315201 China College of Materials Science and Opto-Electronic Technology University of Chinese Academy of Sciences Beijing100049 China Department of Physics University of Science and Technology of China Hefei230026 China Suzhou Institute for Advanced Research University of Science and Technology of China Suzhou215123 China School of Future Technology University of Chinese Academy of Sciences Beijing100049 China

Ferroelectric solid solutions usually exhibit giant dielectric response and high piezoelectricity in the vicinity of the morphotropic phase boundary (MPB), where the structural phase transitions between the rhombohedral and the tetragonal phases as a result of the composition or strain variation. Here, we propose a compositional ordering-driven MPB in the specified compositional solid solutions. By preforming machine-learning potential based molecular dynamics simulations on lead zirconate titanate, we find a phase transition from the rhombohedral to tetragonal phase with the decrease of compositional ordering, leading to the MPB on temperature-ordering phase diagram. The compositional ordering-driven MPB can enhances the piezoelectricity with a magnitude comparable to that at the composition-driven MPB. Finally, we demonstrate that the mechanism of high piezoelectricity is polarization rotation driven by external field. This work provides an additional degree of freedom, compositional ordering, to design the high-performance piezoelectric materials. Copyright © 2024, The Authors. All rights reserved.

关键词： Piezoelectricity

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Two-Dimensional Superconductivity in Hexagonal Layered Na2b2h Structure at Ambient Pressure

SSRN

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SSRN 2024年

作者： Hao, Lingjuan Gao, Qiming Huo, Zhongtang Gu, Yungao Guo, Xiaogang Yuan, Zhikang Gao, Qi Yu, Dongli Handan key Laboratory of Intelligent Awareness and Application Handan University Hebei Province Handan056001 China Center for High Pressure Science State Key Laboratory of Metastable Materials Science and Technology Yanshan University Hebei Province Qinhuangdao066004 China College of Physics and Electronic Information Luoyang Normal University Luoyang471022 China School of Materials Engineering Shanxi College of Technology Shuozhou036000 China

Alkaline metal and alkaline earth metal borohydrides may provide ideal candidates for high-temperature superconductors. By replacing the metal element of the layered hexagonal structure Li2B2H in our earlier work, a novel energetically metastable hexagonal Na2B2H, designated as h-Na2B2H, was proposed at ambient condition. First-principle calculations indicate h-Na2B2H may be prepared from Na3B20, Na, and H2 or pure elements by utilizing high-temperature and high-pressure technology. The h-Na2B2H exhibits the largest tensile stress of 24.2 GPa at a strain of 0.245 along the [1–10] direction among the four directions [100], [001], [110], and [1–10]. electronic property calculations reveal h-Na2B2H holds two-dimensional conductivity along B atom layers. Electron–phonon coupling calculation indicates h-Na2B2H has a Tc of 42.4 K with λ = 1.73. The superconductivity in h-Na2B2H primarily depends on the Na and B atomic vibrations. Thus, h-Na2B2H can be a potential superconducting material with 2D conductivity at atmosphere pressure. © 2024, The Authors. All rights reserved.

关键词： Crystal structure

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Cryogenic Characterization of Nano-scale Bulk FinFETs 15

Cryogenic Characterization of Nano-scale Bulk FinFETs

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15th IEEE International Conference on Solid-State and Integrated Circuit technology, ICSICT 2020

作者： Fan, Lin-Jie Bi, Jin-Shun Fan, Xue Xu, Gao-Bo Xu, Yan-Nan Xi, Kai Zhang, Zhan-Gang Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China University of Chinese Academy of Sciences Beijing100049 China School of Electrical Engineering Chengdu Technological University Chengdu611730 China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou510610 China

ISBN: (纸本)9781728162355

For the state-of-Art quantum technology applications, the effective control and high-speed reading of a large number of qubits require a combination of complementary metal-oxide-semiconductor (CMOS) circuits in cryogenic temperatures environments. In this letter, the electrical responses of bulk fin field effect transistor (FinFET) devices that could be applied in quantum controllers have been investigated under cryogenic conditions. The devices under test are high-k metal gate bulk FinFETs with 35 nm channel length. The electrical properties of the FinFET device are greatly optimized at cryogenic temperatures. As the temperature decreases, the FinFET exhibits a larger saturation current, smaller subthreshold swing, larger maximum transconductance, and smaller gate-induced drain leakage current. These results provide experimental evidence for the implementation of the FinFET in control systems for quantum chips in cryogenic environments. © 2020 IEEE.

关键词： Cryogenics

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Manganese-Based Lithium-Ion Battery: Mn_(3)O_(4) Anode Versus LiNi_(0.5)Mn_(1.5)O_(4) Cathode

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Automotive Innovation 2020年第2期3卷 123-132页

作者： Wenfeng Mao Wei Yue Feng Pei Xiaochen Zhao Xiangdong Huang Guo Ai Tianjin Key Laboratory of Structure and Performance for Functional Molecules MOE Key Laboratory of Inorganic-Organic Hybrid Functional Material ChemistryCollege of ChemistryTianjin Normal UniversityTianjin 300387China Guangzhou Automobile Group Co. Ltd.Guangzhou 511434China School of Materials Science and Engineering South China University of TechnologyGuangzhou 510641China College of Physics and Materials Science Tianjin Normal UniversityTianjin 300387China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory No.5 Electronic Research Institute of the Ministry of Industry and Information TechnologyGuangzhou 510610China

Lithium-ion batteries(LIBs)are widely used in portable consumer electronics,clean energy storage,and electric vehicle ***,challenges exist for LIBs,including high costs,safety issues,limited Li resources,and manufacturingrelated *** this paper,a novel manganese-based lithium-ion battery with a LiNi_(0.5)Mn_(1.5)O_(4) ‖ Mn_(3)O_(4) structure is reported that is mainly composed of environmental friendly manganese compounds,where Mn_(3)O_(4) and LiNi_(0.5)Mn_(1.5)O_(4) (LNMO)are adopted as the anode and cathode materials,*** proposed structure improves battery safety and reduce costs compared with current battery technology,provides comparable energy density with that of traditional graphite-based ***,the characteristics and the electrochemical performances of the Mn_(3)O_(4) anode and the LNMO cathode are investigated separately against Li metal in half cell configurations,with promising performances being demonstrated by both ***,a full cell structure with Mn_(3)O_(4) against LNMO is constructed that provides an average discharge voltage of 3.5 V and an initial specific capacity of 86.2 mA;h;g−*** importantly,the electrochemical performance of the LNMO‖ Mn_(3)O_(4) full cell and its possible decay mechanisms are discussed systemically;and efficient strategies are proposed to further improve both the electrochemical performance of Mn_(3)O_(4) and the stability of LNMO.

关键词： Mn_(3)O_(4) LiNi_(0.5)Mn_(1.5)O_(4) Chemical synthesis Composite Energy storage

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Prediction of electromigration lifetime of copper pillar bumps in ceramic packaging device

Prediction of electromigration lifetime of copper pillar bum...

引用

International Conference on (ICEPT) electronic Packaging technology

作者： Fangzhou Chen Si Chen Zhiwei Fu Yun Huang Fei Qin Tong An Beijing University of Technology Beijing China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China

ISBN: (数字)9781728168265

ISBN: (纸本)9781728168272

In this study, a model for predicting the electromigration lifetime of copper pillar bumps in ceramic packaging device was established. In order to determine the relevant parameters in the Black model of electromigration lifetime prediction, three current density levels, 2.5×10 4 A/cm 2 , 3×10 4 A/cm 2 and 3.5×10 4 A/cm 2 , were selected to conduct the electromigration tests on the Cu pillar bump in ceramic package samples at ambient temperatures of 125°C and 160°C respectively. SEM was used to observe the failure mode of bumps under different temperature and current density. The experiment of on-line monitoring of the bump resistance was used to monitor the resistance information in real time, and then obtain the electromigration lifetime of the copper pillar bumps under each load condition. By determining the current influence index n and the failure activation energy Q, this paper defines the black model of the electromigration lifetime prediction of the copper pillar bumps in the ceramic package.

关键词： Copper Electromigration Resistance Current density Ceramics Couplings Monitoring

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Simulation Analysis of Mechanical Response of Wire Bonding in SiP under Thermal-mechanical-electrical Coupling Load

Simulation Analysis of Mechanical Response of Wire Bonding i...

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IEEE International Conference on Integrated Circuits, Technologies and applications (ICTA)

作者： Fangzhou Chen Si Chen Bin Zhou Yun Huang Fei Qin Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China Beijing University of Technology Beijing China

ISBN: (数字)9781728180328

ISBN: (纸本)9781728180335

The heat dissipation of chips rise the risk for reliability of the system in package (SiP). Sequential coupling FEM simulation method was adopted to evaluate the reliability of SiP. The sub-model technology was used to analyze the thermo-mechanical response of gold wire leads in the whole SiP device. Based on the simulation, the stress and temperature distribution of the lead wires are obtained. The maximum value is compared with the ultimate strength to evaluate the reliability of the product under working conditions.

关键词： Heating systems Wires Lead reliability Integrated circuit modeling Stress Load modeling

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