检索结果-内蒙古大学图书馆

Magnetic tuning of band topology evidenced by exotic quantum oscillations in the Dirac semimetal EuMnSb2

Physical Review B 2023年第8期107卷 L081112-L081112页

作者： Kan Zhao Xuejiao Chen Zhaosheng Wang Jinyu Liu Jiating Wu Chuanying Xi Xiaodong Lv Lei Li Zhicheng Zhong Philipp Gegenwart Experimentalphysik VI Center for Electronic Correlations and Magnetism University of Augsburg 86159 Augsburg Germany School of Physics Beihang University Beijing 100191 China CAS Key Laboratory of Magnetic Materials and Devices and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo 315201 China Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions High Magnetic Field Laboratory of the Chinese Academy of Sciences Hefei 230031 China Department of Physics and Astronomy University of California Irvine California 92697 USA Frontiers Science Center for Flexible Electronics Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials and Engineering Northwestern Polytechnical University 127 West Youyi Road Xi'an 710072 China College of Materials Science and Opto-Electronic Technology University of Chinese Academy of Sciences Beijing 100049 China

Interplay between magnetism and electronic band topology is of central current interest in topological matter research. We use quantum oscillations as a powerful tool to probe the evolution of band topology in the Dirac semimetal EuMnSb2. The Eu local 4f magnetic moments display different antiferromagnetic states below 25 K and a field-polarized phase above 16 T. Upon cooling from 65 K into the field-polarized state, an exotic temperature-dependent shift of oscillation peaks arises, accompanied by the development of nonzero Berry phase and a huge unconventional splitting of the oscillations. Band-structure calculations confirm the change from trivial to nontrivial band topology induced by the ferromagnetic Eu state, classifying EuMnSb2 as a unique magnetic topological semimetal.

关键词： Fermi surface High magnetic fields Landau levels Magnetic order Dirac semimetal Topological insulators Density functional calculations Shubnikov-de Haas effect

来源：评论

学校读者我要写书评

暂无评论

Undamped soliton-like domain wall motion in sliding ferroelectrics

arXiv

引用

arXiv 2025年

作者： Shi, Yubai Gao, Yuxiang He, Ri Wang, Hua Zhang, Binwen Zhong, Zhicheng CAS Key Laboratory of Magnetic Materials and Devices Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo315201 China College of Materials Science and Opto-Electronic Technology University of Chinese Academy of Sciences Beijing100049 China Center for Quantum Matter School of Physics Zhejiang University Hangzhou310058 China School of Artificial Intelligence and Data Science University of Science and Technology of China Hefei230026 China Suzhou Institute for Advanced Research University of Science and Technology of China Suzhou215123 China Fujian Key Laboratory of Functional Marine Sensing Materials Center for Advanced Marine Materials and Smart Sensors College of Material and Chemical Engineering Minjiang University Fuzhou350108 China

Sliding ferroelectricity, which is a unique polarity recently discovered in bilayer van der Waals materials, achieves polarization switching through in-plane interlayer sliding. The unique mechanism, combining intralayer stiffness and interlayer slipperiness, leads to wider domain walls (DWs) and faster DW motion compared to conventional ferroelectrics. Herein, using machine-learning-assisted molecular dynamics simulations and field theory analysis, we find the DW in classical sliding ferroelectric bilayer 3R-MoS2 system exhibits uniformly accelerated motion under an external field, like the Newtonian particle with undamped motion. Remarkably, DW velocity remains constant even after the external field removal, completely deviating from the velocity breakdown observed in conventional ferroelectrics. We further propose an experimental approach to validate this undamped soliton-like DW behavior in sliding ferroelectric systems. Copyright © 2025, The Authors. All rights reserved.

关键词： Van der Waals forces

来源：评论

学校读者我要写书评

暂无评论

Thermal-Electric-Mechanical coupling simulation of Cu Pillar Bumps under AC current

Thermal-Electric-Mechanical coupling simulation of Cu Pillar...

引用

International Conference on Numerical Electromagnetic Modeling and Optimization for RF, Microwave, and Terahertz applications (NEMO)

作者： Kai Li Zhiwei Fu Si Chen GuoYuan Li Jile Xu School of Micro-Electronics South China University of Technology Guangzhou China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China

ISBN: (数字)9781728169668

ISBN: (纸本)9781728169675

With the development of 3D IC, the electromigration of Cu pillar bumps under AC conditions is currently given wide attention. The thermal-electric-mechanical coupling simulation was realized by using the direct coupling element of ANSYS software. We find out that the maximum thermal gradient (TG) is located at IMC layer in the Cu pillar bumps. Due to the large CTE mismatch between the Cu trace and the Si chip, the maximum stress is occurred within the Cu trace. The maximum current density (JS) is located in the middle of the Cu trace and at the corner of the Cu pillar. In addition, during the loading of AC current, with the increase of loading time, the stress and temperature will both increase in the early stage of loading. However, with the current loading continues (t ≥ 0.625s), the temperature and stress gradually maintain at a stabilized level, but show significant fluctuation. With the increase of current frequency, the curves of fluctuation stage will be more and more smooth, and gradually fit to the curve of DC. It is also found that there is a lag between temperature/stress and AC current in the fluctuation stage.

关键词： Couplings Heating systems Fluctuations Loading Silicon Finite element analysis Stress

来源：评论

学校读者我要写书评

暂无评论

Temperature Hysteresis Effect of Q-factor in Vacuum Packaged MEMS Device

Temperature Hysteresis Effect of Q-factor in Vacuum Packaged...

引用

International Conference on (ICEPT) electronic Packaging technology

作者： Xianshan Dong Qinwen Huang Ping Lai Shaohua Yang Wei Su Yun Huang Science and Technology on Reliability Physics and Application of Electronic Component Laboratory No.5 Electronics Research institute of the Ministry of Industry and Information Technology Guangzhou China

ISBN: (数字)9781728168265

ISBN: (纸本)9781728168272

Vacuum packaging technology is commonly used in MEMS device to improve performance. Yet, the temperature influence of vacuum packaging on the MEMS device is rarely studied. In this paper, temperature hysteresis effect of Q-factor in vacuum packaged MEMS device was studied. The experimental test was carried out, and the mechanism was also investigated. Four kinds of MEMS gyroscope with different pressure were designed, and their temperature characteristic of Q-factor were measured. The results show that the packaged pressure influences the temperature hysteresis of Q-factor greatly, and lower pressure packaging would cause larger temperature hysteresis of Q-factor. This study is helpful for designer to understand the influence of vacuum packaging and improve temperature performance for vacuum packaged MEMS device.

关键词： Temperature Q-factor Hysteresis Micromechanical devices Temperature measurement Packaging Gyroscopes

来源：评论

学校读者我要写书评

暂无评论

Temperature-driven structural phase transitions in SmNiO3: insights from deep potential molecular dynamics simulations

arXiv

引用

arXiv 2025年

作者： Shi, Guoyong Deng, Fenglin He, Ri Chen, Dachuan Chen, Xuejiao Jiang, Peiheng Zhong, Zhicheng School of Physics MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter Xi’an Jiaotong University Xi’an710049 China School of Artificial Intelligence and Data Science University of Science and Technology of China Hefei230026 China Suzhou Institute for Advanced Research University of Science and Technology of China Suzhou215123 China CAS Key Laboratory of Magnetic Materials and Devices Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo315201 China College of Materials Science and Opto-Electronic Technology University of Chinese Academy of Sciences Beijing100049 China Ningbo Institute of Digital Twin Eastern Institute of Technology Ningbo315201 China School of Photoelectric Engineering Changzhou Institute of Technology Jiangsu Changzhou213002 China

The metal-insulator transition (MIT) in rare-earth nickelates exemplifies the intricate interplay between electronic correlations and lattice dynamics in quantum materials. This work focuses on SmNiO3 as a prototypical system, employing molecular dynamics simulations based on a "hidden" magnetic potential model. Our simulations reveal two key findings. First, the structural phase transition in SmNiO3 is intrinsically temperature-driven and occurs spontaneously via collective lattice distortions. Moreover, systematic high-pressure simulations demonstrate a distinct pressure dependence of the transition temperature, which decreases monotonically with increasing external hydrostatic pressure. These results provide atomistic insights into the cooperative mechanisms underlying the MIT and the interplay between structural distortions and electron correlation effects. The computational approach developed herein offers a generalizable framework for investigating complex phase transitions in correlated quantum materials. © 2025, CC BY.

关键词： Metal insulator transition

来源：评论

学校读者我要写书评

暂无评论

Degradation Studies on 8-Layer 3D Vertical Resistive Random Access Memory Under Moisture

Degradation Studies on 8-Layer 3D Vertical Resistive Random ...

引用

International Symposium on Physical & Failure Analysis of Integrated Circuits

作者： Dengyun Lei Huiwei Wu Yiqiang Chen Yun Huang Yunfei En Qiantong Guo Feng Zhang Rui Gao Science and Technology on Reliability Physics and Application of Electronic Component Laboratory The No.5 Electronics Research Institute of the Ministry of Industry and Information Technology Guangzhou China China Electronics Corporation Beijing China Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China

Resistive random-access memory (RRAM) is a promising alternative to Flash memory. For high density application, 3D vertical RRAM (VRRAM) is a cost-effective method that attracts many attentions. However, the VRRAM also has some reliability issues. In this paper, the degradation under moisture stress is studied. High resistant state(HRS) is sensitive to moisture, while the low resistant state(LRS) remains stable. So, the moisture stress decreases the memory window. This degradation is caused by the moisture invasion HfO2/TaOx interface along the side wall and reduce the barrier of the interface. Based on Poole-Frenkel emission, this paper models the degradation mechanism to illustrate the process.

关键词： Degradation Resistance Integrated circuits Three-dimensional displays Resistive RAM Moisture Hafnium compounds

来源：评论

学校读者我要写书评

暂无评论

Novel physical unclonable functions base on RRAM for hardware trojan horse defense technology

Novel physical unclonable functions base on RRAM for hardwar...

引用

International Conference on Intelligent Computing, Communication and Devices, ICCD 2017

作者： Yuan, Chi Yuan, Liu Yun-Fei, En Science and Technology on Reliability Physics and Application of Electronic Component Laboratory The Fifth Electronics Research Institute of Ministry of Industry and Information Technology Guangzhou510610 China

ISBN: (纸本)9789811089435

This study proposes a hardware Trojan horse (HTH) defense technology that uses a novel structure of physical unclonable function (PUF) which is based on resistive random access memory (RRAM). An application-specific integrated circuit (ASIC) combined with the technology can effectively prevent HTH embedded. Unlike the conventional silicon PUFs, the randomness of RRAM PUF is not based on process variation and is determined by the stochastic switching mechanism of the RRAM devices. It has some advantages over the conventional one of high security, high reliability, and low area. Experimental results show that the HfO2 RRAM devices have good performances about Hamming distance and reliability. This work demonstrates the RRAM PUF that has great potential for HTH defense. © Springer Nature Singapore Pte Ltd. 2019.

关键词： Hardware security

来源：评论

学校读者我要写书评

暂无评论

An Auxiliary Industrial Equipment Maintenance System Using Mixed Reality

An Auxiliary Industrial Equipment Maintenance System Using M...

引用

International Conference on Industrial Engineering and applications (ICIEA)

作者： Xia Su Zheng Cheng Bin Luo School of Automation Engineering University of Electronic Science and Technology of China Chengdu China Institute of Computer Application China Academy of Engineering Physics Mianyang China

ISBN: (纸本)9781665428958;9781665428965

The intellectualization of modern industrial equipment presents a great challenge to its maintenance. The traditional maintenance of equipment requires the repairer to reference related manual, resulting in low maintenance efficiency. And the attempt based on the Virtual Reality can not produce the real and operable experience. To solve the problems, we proposes an auxiliary equipment maintenance system based on Mixed Reality technology that superposes CAD model and other virtual information to the actual equipment using HoloLens. We take the maintenance of a gasoline engine as an example, mainly including troubleshooting, maintenance guidance and equipment part training, where users only need to follow the steps set by the system, and the experiment about system evaluation shows that it makes equipment maintenance work more simple, intuitive, convenient and efficient.

关键词： Training Visualization Solid modeling Mixed reality Virtual reality Manuals Maintenance engineering

来源：评论

学校读者我要写书评

暂无评论

Opt2ada: An Universal Method for Single-Image Low-Light Enhancement

SSRN

引用

SSRN 2022年

作者： Guo, Xiaoyong Zhang, Kai Peng, Jiahan Chen, Xiaoyan Guo, Guangjie College of Electronic Information and Automation Tianjin University of Science and Technology Tianjin300457 China Xingtai Key Laboratory for research and application of robot intelligent detection and sorting technology Xingtai054001 China College of Mechanical Engineering Tianjin University of Science and Technology Tianjin300457 China School of Physics and Electrical Engineering Xingtai University Xingtai054001 China

In this paper, it is proposed that the task of single-image low-light enhancement can be accomplished by a straightforward method named Opt2Ada in which a series of operations are integrated including an \textbf{opt}imized illuminance map generation, an \textbf{ada}ptive illuminance enhancement, and an \textbf{ada}ptive global scaling. A rich variety of criteria is used for the evaluation, including full-reference, no-reference, and semantic metrics. Extensive experiments on real-world low-light images clearly verify the superiority of Opt2Ada against recently proposed state-of-the-art enhancing algorithms in RGB color space including both traditional and deep learning methods. Opt2Ada neither relies on specific architecture engineering nor dataset collection and preparation. It is not data-driven and its parameters are universal resulting to a generalization capability better than that of the data-driven methods. Moreover, we deploy Opt2Ada on various mobile phones, and find that a native CPU implementation can reach 3-9 frames per second. Since our method is simple and effective, this makes it convenient to be developed by any programming language and imbedded into the pre-processing subroutines for high-level machine vision tasks. © 2022, The Authors. All rights reserved.

关键词： Image enhancement

来源：评论

学校读者我要写书评

暂无评论

Opt2ada: An Universal Method for Single-Image Low-Light Enhancement

SSRN

引用

SSRN 2022年

作者： Guo, Xiaoyong Zhang, Kai Peng, Jiahan Chen, Xiaoyan Guo, Guangjie College of Electronic Information and Automation Tianjin University of Science and Technology Tianjin300457 China Xingtai Key Laboratory for Research and Application of Robot Intelligent Detection and Sorting Technology Xingtai054001 China College of Mechanical Engineering Tianjin University of Science and Technology Tianjin300457 China School of Physics and Electrical Engineering Xingtai University Xingtai054001 China

关键词： Image enhancement

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：