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reliability Research of Fiber-optic Hydrophone Acoustic Sensitive Component Based on Fiber Distributed Strain Testing 6

Reliability Research of Fiber-optic Hydrophone Acoustic Sens...

引用

6th International Conference on System reliability and Safety Engineering, SRSE 2024

作者： Li, Shuwang Wang, Jianfei Liu, Yuebo Chen, Mo Niu, Hao Lu, Guoguang China Electronic Product Reliability and Environmental Testing Research Institute Reliability Physics and Application of Electronic Component Laboratory Guangzhou China National University of Defense Technology College of Meteorology and Oceanology Changsha China

ISBN: (纸本)9798350356083

Acoustic sensitive component is the pivotal sensitivity core and the major weak links of fiber-optic hydrophone. In actual service environments, the fiber-optic hydrophone acoustic sensitive component needs to detect weak acoustic signals under hydrostatic pressure of tens of megapascals. Any reliability problems of the acoustic sensitive component may lead to the failure of the fiber-optic hydrophone. Thus, reliability is a critical technical specification for the fiber-optic hydrophone acoustic sensitive component. In this paper, we address the limitations of traditional overall optical path loss detection methods, which are insufficient to effectively characterize the performance changes of the fiber-optic hydrophone acoustic sensitive component under hydrostatic pressure service conditions, and propose a novel reliability research method for the fiber-optic hydrophone acoustic sensitive component based on fiber-optic distributed strain testing technology. Firstly, we analyzed the structural characteristics and reliability testing requirements of fiber-optic hydrophone acoustic sensitive component, and proposed a reliability research method based on distributed strain testing. Further, we built an experimental setup as described above and conducted mass of practical test experiments with different fiber-optic hydrophone acoustic sensitive component samples to prove the feasibility and repeatability of the new method. Finally, we used this method analyzed the reliability of acoustic sensitive component under hydrostatic pressure conditions, clarifying the location and mechanism of failure, and providing clear guidance for subsequent reliability improvement. The analysis of the experimental results shows that the nondestructive, in-situ testing method present in this paper can effectively characterize the internal strain variations of the acoustic sensitive component under hydrostatic pressure loads, thereby providing intuitive data support for reliability analysis

关键词： Hydrostatic pressure

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Effect of Integration Time on the Performance Parameters of InGaAs Detectors

Effect of Integration Time on the Performance Parameters of ...

引用

2024 Conference on Spectral technology and applications, CSTA 2024

作者： Luo, Xi Liu, Yuebo Zhang, Yichi Lu, Jianting Wei, Zhipeng Yang, Shaohua State Key Laboratory of High Power Semiconductor Lasers Changchun University of Science and Technology Changchun130022 China Reliability Physics and Application Technology of Electronic Component Key Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou511370 China

ISBN: (纸本)9781510683082

Shortwave infrared imaging has the characteristics of high recognition and all-weather adaptation. Consequently, InGaAs short-wave infrared (SWIR) detectors find extensive applications in military and civilian fields, which imposes higher performance demands on InGaAs SWIR detectors. To optimize the performance and effectiveness of InGaAs SWIR detectors, this study delves into the fluctuation patterns of detectivity, responsivity, and dynamic range concerning integration time. Furthermore, it examines the outcomes of these parameters at various integration times. It is observed that the performance of InGaAs SWIR detectors changes at different integration times, and each parameter exhibits specific variation patterns with integration time. © 2024 SPIE.

关键词： Infrared detectors

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Degradation mechanisms of total ionizing dose effect in photocouplers

Degradation mechanisms of total ionizing dose effect in phot...

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2023 Advanced Fiber Laser Conference, AFL 2023

作者： He, Yujuan Liu, Tianzi Ma, Teng Zhang, Hong Tan, Xu Lei, Zhifeng Peng, Chao Zhang, Zhangang Liu, Yuebo Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou511370 China Guangzhou Intelligent Equipment Research Institute Co. Ltd Guangzhou510535 China

ISBN: (纸本)9781510677661

This article investigates the degradation mechanisms of total ionizing dose (TID) effects in photocouplers under different bias conditions. The irradiation measurement of silicon-based photocoupler devices is carried out by using a 60Co γ-ray source under various radiation bias conditions. The results of the test indicate that the current transfer rate (CTR) of the photocoupler reduces with an increase in the total dose. In addition, the non-luminous traps produced by the TID irradiation in the diffusion region of the PN junction of the light-emitting diode within the photocoupler cause more severe total dose effects when the input current of the device is low. This could be attributed to the charges being captured more easily in such scenarios. These representative results support the reliable application of the photocoupler devices in space radiation environments. © COPYRIGHT SPIE. Downloading of the abstract is permitted for personal use only.

关键词： Irradiation

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Analytical and Measurement-Based Method for Voltage Fault Injection of CAN Chip Security 6

Analytical and Measurement-Based Method for Voltage Fault In...

引用

6th International Conference on electronics technology, ICET 2023

作者： Wang, Naiye Qu, Chenbing Hou, Bo Wang, Liwei Sun, Chen China Electronic Product Reliability and Environmental Testing Research Institute Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China Hunan Institute of Engineering School of Computational Science and Electronics Xiangtan China

ISBN: (纸本)9798350337693

The need for CAN chip dependability is growing urgent due to the widespread use of CAN bus in numerous sectors and professions. This word presents an analytical method of voltage fault injection measurement-based CAN chip security. The automatic hardware FI test method based on the prototype system is proposed to detect the fault error in abnormal environment. The signal trigger and control module is designed to test automation process. In addition, the extended parameter model is established for shortening test time and automatic statistical analysis of a number of test data. The results show that the test circuit system CAN realize the voltage random fault test and automatic analysis in the range of 1.5 ∼ 5.5V, which provides a more accurate and comprehensive basis for improving the security of CAN chip. © 2023 IEEE.

关键词： Software testing

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Investigating the possibility of multiple board parallel test of atmospheric-neutron induced soft errors

Investigating the possibility of multiple board parallel tes...

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2023 Advanced Fiber Laser Conference, AFL 2023

作者： Yu, Qirui Zhang, Zhan'Gang Li, Bin Zheng, Shunshun Lin, Jianjun Wu, Zhaohui Lei, Zhifeng Peng, Chao Ma, Teng School of Microelectronics South China University of Technology Guangzhou511442 China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou511370 China Gowin Semiconductor Corporation Guangzhou510700 China

ISBN: (纸本)9781510677661

Accelerated tests for Single Event Effect (SEE) that irradiate the target with far higher fluence beam are typically applied to investigate the device sensitivity to atmospheric neutron. Considering the neutrality and strong penetrability of neutron, devices are frequently placed in parallel to save time. For nanoscale devices, however, the results may be significantly influenced. The possibility of applying multiple-board parallel testing in accelerated experiments of atmospheric-neutron-induced soft errors was investigated using a 22-nm Static Random-Access Memory (SRAM) Field Programmable Gate Array (FPGA). To simplify the analysis, several empty Printed Circuit Boards (PCBs) were employed as the upstream boards. Both Block Random-Access Memory (BRAM) and Configuration Random-Access Memory (CRAM) were tested under the neutron beam provided by Atmospheric Neutron Irradiation Spectrometer (ANIS), showing similar results. For high-energy neutrons, device sensitivity decreases as the number of upstream PCBs increases, although the influence seems weak. The drop in cross sections from no-PCB to 20-PCBs is less than 30% for both modules. For thermal neutron testing, however, its sensitivity was greatly suppressed by PCBs. Epoxy resin contained in PCBs is considered to be the key factors for these phenomena due to its high content of hydrogen. Also, neutron can be scattered by copper to lose energy or even be absorbed by it. As a result, the actual fluence of the neutron reaching the device was reduced. Therefore, parallel testing may not be suitable if thermal neutrons need to be considered, but it is practicable for high-energy neutron testing with proper correction algorithms applied. © COPYRIGHT SPIE. Downloading of the abstract is permitted for personal use only.

关键词： Neutrons

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A New Resonant Composite Probe for Near-field Scanning 15

A New Resonant Composite Probe for Near-field Scanning

引用

15th International Conference on Microwave and Millimeter Wave technology, ICMMT 2023

作者： Nie, Duan Wang, Rui-Qi Wang, Lei Shaanxi University of Science and Technology School of Electronic Information and Artificial Intelligence Xi'an710021 China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Ceprei Guangzhou511370 China

ISBN: (纸本)9798350338874

In this article, a new wideband resonant probe with two orthogonal magnetic-field measurement features is proposed. The resonant magnetic-field probe consists of two orthogonal shorted sensing loops, two transmission lines with two outputs, a pair of LC resonant circuits, a shorted via, a connected via, and two rows of coaxial via fences. The LC resonant circuits including a pair of shorted stubs as additional inductor and open stubs as additional capacitor are used to excite resonant mode. The connected and shorted vias are used to form the orthogonal sensing loops. In order to verify the design rationality, the proposed probe is optimized, manufactured, and measured. The simulated results reveal the proposed probe could simultaneously test two orthogonal magnetic-field components at 1.575 GHz. © 2023 IEEE.

关键词： Resonant circuits

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Investigation of Off-state Stress Time-Dependent Dynamic On-resistance of Commercial High Voltage GaN HEMTs 18

Investigation of Off-state Stress Time-Dependent Dynamic On-...

引用

18th IEEE Conference on Industrial electronics and applications, ICIEA 2023

作者： Li, Yao Tang, Hui Zhang, Ke Ni, Yiqiang He, Liang He, Zhiyuan Shi, Yijun Liu, Jun University of South China School of Electrical Engineering Hengyang China Electronic Product Reliability and Environmental Testing Research Institute Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China

ISBN: (纸本)9798350312201

The effects of off-state stress time on dynamic on-resistance are investigated in a commercial 650 V GaN power device. A modified double pulse test (DPT) circuit is used to evaluate the dynamic on-resistance degradation with various stress value and time under hard-switching conditions. Our experimental results reveal partial recovery behaviors of dynamic on-resistance with stress voltage increasing. The dynamic on-resistance degradation gets more severe as stress voltage initially increases. Then the dynamic on-resistance reaches a peak value and begins to decrease as the stress voltage further increases. Furthermore, we find that the turning point of maximum dynamic on-resistance occurs at a lower stress voltage with longer stress time. It indicates that stress time is a very important factor affecting the degree of dynamic on-resistance degradation. © 2023 IEEE.

关键词： III-V semiconductors

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Synthesis and characterization of photosensitive humidity-responsive cobalt ion coordination polyurethanes

Synthesis and characterization of photosensitive humidity-re...

引用

2023 International Conference on Optoelectronic Materials and Devices, ICOMD 2023

作者： Wei, Yanhong Yun, Tian Yu, Xiaowen Zhang, Luziping Xiao, Fei Wang, Lian Chongqing CEPREI Industrial Technology Research Institute Co. Ltd Chongqing401332 China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory CEPREI Guangzhou511370 China

ISBN: (纸本)9781510674509

CoPU films with different complexing ratios were synthesized by coordination modification experiments on polyurethane using cobalt chloride as the complexing agent. In view of the phenomena that the colour of CoPU film changed from blue to pink and the transparency decreased during the process of storage in a humidity environment, the FT-IR spectra and the humidity response of the transmittance were studied. The results show that CoPU films absorb water to form a coordinated crystalline water structure in the humidity environment, and the cobalt ion configuration changes from sp3 tetrahedron state to d2sp3 octahedron state, resulting in the change of colour and transparency. This process is reversible. Meanwhile, there is a good linear relationship between the moisture absorptivity and the average transmittance of the visible light region of the low complexing ratio material films, which has application prospects of photosensitive humidity-responsive polyurethane materials. © 2024 SPIE. All rights reserved.

关键词： Polyurethanes

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Enhanced Inverter Hybrid Fault Diagnosis through RAM and CNN Integration 14

Enhanced Inverter Hybrid Fault Diagnosis through RAM and CNN...

引用

14th International Conference on reliability, Maintainability and Safety, ICRMS 2023

作者： Meng, Linghui Li, Lin Jiang, Yuanyuan Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangdong Guangzhou China Anhui University of Science and Technology School Institute of Artificial Intelligence Anhui Huainan China

ISBN: (纸本)9798350329988

Deep learning has been widely used in inverter open-circuit fault diagnosis;however, traditional neural networks only extract signal features of inverter faults without distinguishing between significant and minor features. To address this limitation, this paper proposes a diagnostic method for inverter hybrid faults that combine reverse attention mechanism (RAM) and convolutional neural networks. The proposed method highlights important features by utilizing RAM to reverse the attention and prune the minor features. In addition, long short-term memory is used to learn temporal information between the features. Finally, fault classification is performed using fully connected layers. Simulation experiments indicate that the proposed diagnostic method significantly improves fault diagnosis accuracy. Compared to traditional neural network fault diagnosis methods, our proposed method achieves up to 8.07% higher diagnosis accuracy, thereby validating its effectiveness. © 2023 IEEE.

关键词： Convolutional neural networks

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IGBT Performance Degradation Feature Construction and Real-Time Prediction Based on Machine Learning 17th

IGBT Performance Degradation Feature Construction and Real-T...

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17th Annual Conference of China Electrotechnical Society, CES 2022

作者： Wang, Xin Zhou, Zhenwei He, Shilie Jia, Hanguang Huang, Yun The Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Institute Guangzhou510610 China School of Automation and Engineering South China University of Technology Guangzhou510641 China

ISBN: (纸本)9789819903566

Insulated gate bipolar transistor (IGBT) has developed rapidly in recent years, and its performance is excellent in high voltage, high current and high frequency applications, which makes it been regarded as an ideal power module. However, due to the long-term operation in harsh conditions, the degradation of IGBT occurs from time to time, which will cause irreversible damage to electronic equipment and even affect the normal operation of the whole system. Therefore, it is necessary to establish a reliable IGBT anomaly detection system and apply the performance degradation prediction technology to the prediction of IGBT in the whole life cycle. In this paper, based on the data-driven method of degradation characteristic parameters, combined with grey correlation degree, Mahalanobis distance, Kalman filter, support vector regression and other methods, the performance degradation prediction of IGBT is completed and the above methods are verified and analyzed based on NASA public data. © 2023, Beijing Paike Culture Commu. Co., Ltd.

关键词： NASA

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