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International Conference on (ICEPT) electronic Packaging technology

作者： Zezheng Li Bin Zhou Si Chen Tong An Fei Qin Beijing University of Technology Beijing China Science and technology on reliability physics and application of electronic component laboratory Guangzhou China

ISBN: (数字)9781728150642

ISBN: (纸本)9781728150659

This paper uses the finite element method to establish a three-dimensional finite element model of a ceramic column grid array (CCGA) package flat cover and T-cover structure. The stress distribution of CCGA package sealing cover under three random vibration loads (acceleration root mean square values of 53.5 m/s 2, 92.6 m/s 2 , 119.5 m/s 2 ) is analyzed, and the flat cover and T-shaped cover are respectively determined. The dangerous position of the plate structure, the initial position of the crack and the crack propagation. The results show that the flat cover plate is prone to cracks at the four corners of the interface between sealing cover and solder, and the T-shaped cover plate is liable to cracks in the middle of the edge of the interface between sealing cover and solder.

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Magnetism in doped infinite-layer NdNiO2studied by combined density functional theory and dynamical mean-field theory

arXiv

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arXiv 2022年

作者： Chen, Dachuan Jiang, Peiheng Si, Liang Lu, Yi Zhong, Zhicheng CAS Key Laboratory of Magnetic Materials and Devices Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo315201 China College of Materials Science and Opto-Electronic Technology University of Chinese Academy of Sciences Beijing100049 China School of Physics Northwest University Xi’an710069 China Institute for Solid State Physics Vienna University of Technology Vienna1040 Austria National Laboratory of Solid State Microstructures Department of Physics Nanjing University Nanjing210093 China Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing210093 China China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing100049 China

The recent observation of superconductivity in infinite-layer nickelates has brought intense debate on the established knowledge of unconventional superconductivity based on the cuprates. Despite many similarities, the nickelates differ from the cuprates in many characteristics, the most notable one among which is the magnetism. Instead of a canonical antiferromagnetic Mott insulator as the undoped cuprates, from which the superconductivity is generally believed to arise upon doping, the undoped nickelates show no sign of magnetic ordering in experiments. Through a combined density functional theory, dynamical mean-field theory, and model study, we show that although the increased energy splitting between O-p orbital and Cu/Ni-d orbital (Δdp) results in larger magnetic moment in nickelates, it also leads to stronger antiferromagnetism/ferromagnetism competition, and weaker magnetic exchange coupling. Meanwhile, the self-doping effect caused by Nd-d orbital screens the magnetic moment of Ni. The Janus-faced effect of Δdpand self-doping effect together give a systematic understanding of magnetic behavior in nickelates and explain recent experimental observations. Copyright © 2022, The Authors. All rights reserved.

关键词： Magnetic moments

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Ab initio MCDHF calculations of the in and Tl electron affinities and their isotope shifts

arXiv

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arXiv 2021年

作者： Si, Ran Schiffmann, Sacha Wang, Kai Chen, Chong Yang Godefroid, Michel Shanghai EBIT Lab Key Laboratory of Nuclear Physics and Ion-beam Application Institute of Modern Physics Department of Nuclear Science and Technology Fudan University Shanghai200433 China Université libre de Bruxelles CP160/09 Brussels1050 Belgium Division of Mathematical Physics Department of Physics Lund University Box 118 LundSE-22100 Sweden Hebei Key Lab of Optic-electronic Information and Materials The College of Physics Science and Technology Hebei University Baoding071002 China

We report multiconfiguration Dirac-Hartree-Fock and relativistic configuration interaction calculations on the Thallium (Tl) electron affinity, as well as on the excited energy levels arising from the ground configuration of Tl−. The results are compared with the available experimental values and further validated by extending the study to its homologous, lighter element, Indium (In), belonging to Group 13 (III.A) of the periodic table. The calculated electron affinities of In and Tl, 383.4 and 322.8 meV, agree with the latest measurements by within 1%. Three bound states 3P0,1,2 are confirmed in the 5s25p2 configuration of In− while only the ground state 3P0 is bound in the 6s26p2 configuration of Tl−. The isotope shifts on the In and Tl electron affinities are also estimated. The E2/M1 intraconfiguration radiative transition rates within 5s25p2 3P0,1,2 of In− are used to calculate the radiative lifetimes of the metastable 3P1,2 levels. Copyright © 2021, The Authors. All rights reserved.

关键词： Electron affinity

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Advancements in gallium-oxide-based memristors

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Journal of Alloys and Compounds 2025年 1034卷

作者： Zhang, Shiyang Zhang, Fabi Sun, Tangyou Peng, Ying Chen, Zanhui Liu, Xingpeng Guo, Daoyou Wang, Xu Li, Haiou Guangxi Key Laboratory of Precision Navigation Technology and Application Guilin University of Electronic Technology Guilin541004 China Center for Optoelectronics Materials and Devices & Key Laboratory of Optical Field Manipulation of Zhejiang Province Department of Physics Zhejiang Sci-Tech University Hangzhou310018 China Department of Microelectronic Science and Engineering School of Physical Science and Technology Ningbo University Ningbo315211 China

The memristor, an innovative device linking flux and charge, uniquely retains its resistance state even after power is disconnected, garnering widespread interest for memory and computing applications. Among emerging ultra-wide bandgap semiconductors, gallium oxide (Ga2O3) stands out due to advancements in high-quality single-crystal substrate growth, positioning it as a promising material for next-generation power and electronic devices. This review consolidates key developments in Ga2O3-based memristor technology. Beginning with its foundational role in semiconductor evolution, we then examine the current research progress in various resistance-switching mechanisms within memristors, concluding with a comprehensive summary of Ga2O3-based memristors that highlights their applications in non-volatile memory, neuromorphic computing, optoelectronics, and beyond. This review aims to serve as a valuable resource for researchers in wide bandgap semiconductor devices and to support the continued advancement of Ga2O3-based memristor technologies. © 2025 Elsevier B.V.

关键词： Semiconducting gallium

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Degradation of current–voltage and low frequency noise characteristics under negative bias illumination stress in InZnO thin film transistors

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Chinese physics B 2018年第6期27卷 524-530页

作者： Li Wang Yuan Liu Kui-Wei Geng Ya-Yi Chen Yun-Fei En School of Electronic and Information Engineering South China University of TechnologyGuangzhou 510640China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory CEPREIGuangzhou 510610China Key Laboratory of Silicon Device Technology Chinese Academy of SciencesBeijing 100029China

The instabilities of indium–zinc oxide thin film transistors under bias and/or illumination stress are studied in this paper. Firstly, illumination experiments are performed, which indicates the variations of current–voltage characteristics and electrical parameters（such as threshold voltage and sub-threshold swing） are dominated by the stress-induced ionized oxygen vacancies and acceptor-like states. The dependence of degradation on light wavelength is also investigated. More negative shift of threshold voltage and greater sub-threshold swing are observed with the decrease of light ***, a negative bias illumination stress experiment is carried out. The degradation of the device is aggravated due to the decrease of recombination effects between ionized oxygen vacancies and free carriers. Moreover, the contributions of ionized oxygen vacancies and acceptor-like states are separated by using the mid-gap method. In addition, ionized oxygen vacancies are partially recombined at room temperature and fully recombined at high temperature. Finally, low-frequency noise is measured before and after negative bias illumination stress. Experimental results show few variations of the oxide trapped charges are generated during stress, which is consistent with the proposed mechanism.

关键词： indium-zinc oxide thin film transistor illumination low frequency noise

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Giant domain wall anomalous Hall effect in an antiferromagnet

arXiv

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arXiv 2023年

作者： Xia, Wei Bai, Bo Chen, Xuejiao Yang, Yichen Zhang, Yang Yuan, Jian Li, Qiang Yang, Kunya Liu, Xiangqi Shi, Yang Ma, Haiyang Yang, Huali He, Mingquan Li, Lei Xi, Chuanying Pi, Li Lv, Xiaodong Wang, Xia Liu, Xuerong Li, Shiyan Zhou, Xiaodong Liu, Jianpeng Chen, Yulin Shen, Jian Shen, Dawei Zhong, Zhicheng Wang, Wenbo Guo, Yanfeng School of Physical Science and Technology ShanghaiTech University Shanghai201210 China CAS Key Laboratory of Magnetic Materials Devices Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo315201 China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai200050 China State Key Laboratory of Surface Physics Department of Physics Fudan University Shanghai200433 China Low Temperature Physics Lab College of Physics Center of Quantum Materials and Devices Chongqing University Chongqing401331 China Xi’an Institute of Biomedical Materials & Engineering Northwestern Polytechnical University Xi’an710072 China Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions High Magnetic Field Laboratory of the Chinese Academy of Sciences Anhui Hefei230031 China ShanghaiTech Laboratory for Topological Physics ShanghaiTech University Shanghai201210 China College of Physics and Electronic Information Inner Mongolia Normal University 81 Zhaowuda Road Inner Mongolia Hohhot010022 China Analytical Instrumentation Center School of Physical Science and Technology ShanghaiTech University Shanghai201210 China Institute for Nanoelectronic Devices and Quantum Computing Fudan University Shanghai200433 China Clarendon Laboratory Department of Physics University of Oxford OxfordOX1 3PU United Kingdom National Synchrotron Radiation Laboratory University of Science and Technology of China 42 South Hezuohua Road Anhui Hefei230029 China

Generally, the dissipationless Hall effect in solids requires time-reversal symmetry breaking (TRSB), where TRSB induced by external magnetic field results in ordinary Hall effect, while TRSB caused by spontaneous magnetization gives rise to anomalous Hall effect (AHE) which scales with the net magnetization. The AHE is therefore not expected in antiferromagnets with vanishing small magnetization. However, large AHE was recently observed in certain antiferromagnets with noncolinear spin structure and nonvanishing Berry curvature. Here, we report another origin of AHE in a layered antiferromagnet EuAl2Si2, namely the domain wall (DW) skew scattering with Weyl points near the Fermi level, in experiments for the first time. Interestingly, the DWs form a unique periodic stripe structure with controllable periodicity by external magnetic field, which decreases nearly monotonically from 975 nm at 0 T to 232 nm at 4 T. Electrons incident on DW with topological bound states experience strong asymmetric scattering, leading to a giant AHE, with the DW Hall conductivity (DWHC) at 2 K and 1.2 T reaching a record value of ∼1.51×104 S cm-1 among bulk systems and being two orders of magnitude larger than the intrinsic anomalous Hall conductivity. The observation not only sets a new paradigm for exploration of large anomalous Hall effect, but also provides potential applications in spintronic devices. © 2023, CC BY.

关键词： Hall effect

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Gamma ray spectrum inversion based on master-secondary encoder-decoder network

引用

Computer physics Communications 2025年 315卷

作者： Hu, Rundu Liu, Jian Zhou, Ruijie Hu, Liqun Department of Plasma Physics and Fusion Engineering University of Science and Technology of China HeFei230026 China Weihai Institute for Interdisciplinary Research Shandong University WeiHai264209 China Shandong Key Laboratory of Intelligent Electronic Packaging Testing and Application WeiHai264209 China Institute of Plasma Physics Chinese Academy of Sciences HeFei230031 China

Gamma-ray diagnosis can detect the energy and spatial distribution of fast ions, as well as identify disruption signs. The detector's response to the gamma-ray spectrum involves complex mappings, requiring a fast and accurate spectrum reconstruction method. The challenge lies in the ill-conditioned nature of spectrum inversion, where errors in measurement can significantly amplify the uncertainties of the inversion results. To solve this, additional information is needed, introducing non-linearity into the problem. Traditional approaches typically rely on iterative algorithms, such as linear regularization, maximum likelihood estimation method (ML-EM), and Gold deconvolution (Gold). Recently, neural networks have gained traction due to their strong capability in handling non-linear and highly ill-posed problems. In this paper, we present a method leveraging a master-secondary network structure that splits the spectrum inversion into two simpler sub-problems, improving outcomes beyond those of a single network. This network structure is verified suitable for solving highly ill-posed inversion problems and applying to gamma-ray spectrum reconstruction. Our method's accuracy is compared to ML-EM and Gold, demonstrating superior stability and effectiveness, particularly under high noise conditions, achieving a level suitable for practical applications. This method has been successfully applied to gamma-ray spectrum detection in the EAST tokamak facility. © 2025 Elsevier B.V.

关键词： Maximum likelihood estimation

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Study of Fields Above Differential Microstrip lines for Probe Characterization application

Study of Fields Above Differential Microstrip lines for Prob...

引用

Workshop on Electromagnetic Compatibility of Integrated Circuits (EMC Compo)

作者： Xinxin Tian Zeyi Li Rongquan Chen Meizhen Xiao Weiheng Shao Wenxiao Fang Duolong Wu Lei Wang Hengzhou Liu Yulong Wang Xuecheng Xu Zhiyuan He Heng Zhang School of Physics and Optoelectronic Engineering Guangdong University of Technology Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute (CEPREI) Guangzhou China

The spatial resolution of probe is defined for a 6-dB level drop point from the peak point close to the edge of the microstrip line. However, this definition is not clear for strongly coupled traces. If the spacing between adjacent traces is small enough, the probe may not detect multiple sources. In this paper, near fields above differential microstrip lines are investigated numerically and theoretically for probe characterization of spatial resolution. Results show several limiting cases for the probe to discriminate two RF sources in close proximity. It is discovered that two traces can be easily distinguished with differential mode excitation, while the detection for the common mode excitation cases is affected by probe height and trace spacing.

关键词： Probes Magnetic field measurement Electromagnetic compatibility Spatial resolution Microstrip components Magnetic fields

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Comparison of Time Series Forecasting Based on Statistical ARIMA Model and LSTM with Attention Mechanism

Comparison of Time Series Forecasting Based on Statistical A...

引用

作者： Kun Zhou Wen Yong Wang Teng Hu Chen Huang Wu School of Computer Science and Engineering University of Electronic Science and Technology of China Institute of Computer Application China Academy of Engineering Physics School of Mathematics and Finance Putian University

Time series Forecasting(TSF) has been a research hotspot and widely applied in many areas such as financial, bioinformatics, social sciences and engineering. This article aimed at comparing the forecasting performances using the traditional Auto-Regressive Integrated Moving Average(ARIMA) model with the deep neural network model of Long Short Term Memory(LSTM) with attention mechanism which achieved great success in sequence modelling. We first briefly introduced the basics of ARIMA and LSTM with attention models, summarized the general steps of constructing the ARIMA model for the TSF task. We obtained the dataset from Kaggle competition web traffic and modelled them as TSF problem. Then the LSTM with attention mechanism model was proposed to the TSF. Finally forecasting performance comparisons were conducted using the same dataset under different evaluation metrics. Both models achieved comparable results with the up-to-date methods and LSTM slightly outperformed the classical counterpart in TSF task.

关键词： Comparison of Time Series Forecasting Based on Statistical ARIMA Model and LSTM with Attention Mechanism Model

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Free Energy Regulation and Domain Engineering of Batio3-Nanbo3 Ceramics for Superior Dielectric Energy Storage Performance

SSRN

引用

SSRN 2022年

作者： Xiao, Wenrong Liu, Zhen Zhang, Chao Dou, Zhanming Fan, Baoyan Shen, Meng Yang, Ying Luo, Wei Li, Kanghua Fu, Qiuyun Jiang, Shenglin Wang, Yaojin Zhang, Guangzu School of Optical and Electronic Information Engineering Research Center for Functional Ceramics MOE Wuhan National Laboratory for Optoelectronics Huazhong University of Science and Technology Hubei430074 China School of Materials Science and Engineering Nanjing University of Science and Technology Jiangsu Nanjing210094 China Chongqing Key Laboratory of Nano/Micro Composites and Devices College of Metallurgy and Materials Engineering Chongqing University of Science and Technology Chongqing401331 China Hubei Key Laboratory of Ferro & Piezoelectric Materials and Devices Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials Key Laboratory of Green Preparation and Application for Functional Materials Ministry of Education School of Physics and Electronic Science Hubei University Hubei430062 China China Zhenhua Group Yunke Electmnics Co. Ltd. Guizhou550018 China

Ferroelectrics with high electric polarization are preferred materials for dielectric energy storage capacitors, as they outperform their linear counterparts in energy density determining the miniaturization and lightweight progress of the electric power systems. However, it is very challenging to balance the performance between the energy density and other indispensable features including energy efficiency, temperature and frequency stabilities, and cycling fatigue resistance in ferroelectrics, all of which play a decisive role in practical applications. In this work, to suppress the dielectric loss for ideal energy efficiency while maintaining the high energy density, we proposed a domain engineering that smashed the domains of the materials into polar nano regions. Meanwhile, as guided by thermodynamics, we make the potential well of the free energy independent of temperature for the exceptionally high stability of the energy storage performance. Our concept was demonstrated in the typical BaTiO3-NaNbO3 (BN) lead-free solid-solution system. With the incorporation of Bi(Zn0.5Zr0.5)O3 (BZZ), the BN-BZZ shows an extremely slim hysteresis loop and yields a stunning energy density energy efficiency of 91.4% without compromise of energy storage density (10.2 J cm-3), the highest value in lead-free ferroelectric ceramics with efficiency exceeding 90%. Furthermore, the high energy density and efficiency at 500 kV cm-1 vary only ±5% and ±3%, respectively, in the wide temperature and frequency ranges (-55 oC-250 oC, 1 Hz-1000 Hz, far exceeding the requirement of X9R standard), and minute decay was observed with a long-term fatigue measurement. Our strategy would be available for designing ferroelectrics with various material systems for high energy storage properties. © 2022, The Authors. All rights reserved.

关键词： Free energy

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