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检索条件"机构=Science and Technology on Reliability Physics and Application of Electronic"

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4.9 GHz A1-mode Lamb Wave Resonator based on Partially Released LN Film 6

4.9 GHz A1-mode Lamb Wave Resonator based on Partially Relea...

引用

6th International Conference on electronics technology, ICET 2023

作者： Zhang, Zhuo Zhang, Ting-Yang Huang, Qin-Wen Yang, Shao-Hua Zhang, Xiao-Sheng Tu, Cheng University of Electronic Science and Technology of China School of Electronic Science and Engineering Chengdu China Sci. and Technol. on Reliability Phys. and Application Technology of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China

ISBN: (纸本)9798350337693

This work presents a 4.9 GHz A1 -mode Lamb wave resonator (LWR) based on partially released Z-cut lithium niobate (LN) thin film, which is aimed at application of 5G communication in N79 band. The designed LWR utilizes the horizontal electric field for efficient excitation of first-order antisymmetric (A1) mode in the acoustic cavity made of LN film. The fabrication process for the designed LWR is described and validated. The measured results show that the partially released devices achieve large electromechanical coupling coefficient (kt2=27%), which is comparable to that of reported fully released devices. The measured results are in good agreement with the finite element (FE) simulations. The presented partially released LWRs show prospect to improve the mechanical robustness of such devices without much sacrifice to performance. © 2023 IEEE.

关键词： Surface waves

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New Diagnostics for Inferring Multiple Fault Scenarios and Accurate Fault Localization

New Diagnostics for Inferring Multiple Fault Scenarios and A...

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2024 IEEE Global Communications Conference, GLOBECOM 2024

作者： Zhou, Huisi Hu, Wei Zhu, Dan Wang, Liwei Northwestern Polytechnical University School of Cybersecurity Xi'an710072 China Research & Development Institute Northwestern Polytechnical University Shenzhen China Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory Guangzhou430070 China

ISBN: (纸本)9798350351255

For many high-tech fields such as mobile communication systems, network management, and satellite and space applications, it is vital to discover faulty components of manufactured devices in a timely manner to ensure safety. Model-based diagnosis is a crucial element in fault diagnosis. It aims to find the possible causes of the observed unexpected behaviors of a system when assuming all of its components work correctly. In this paper, we propose two diagnostics, namely, the Improved Model-Based Diagnosis (IMBD) and the Localization-Based Diagnosis (LBD), to address the research challenge that massive candidate diagnoses are needed in the traditional model-based diagnosis approach for repairing the faulty system. Our diagnostics realizes a simulator to simulate the single-fault scenarios, through which we can reason about the scenarios where multiple faults occur and find which components are more likely to fail in the multiple-fault system. Experiments using the ISCAS-85 benchmarks indicate that LBD is superior to IMBD and SAT-based approaches for accurate fault localization. © 2024 IEEE.

关键词： Satellite communication systems

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Analysis of Power Cycle Aging Test for SiC MOSFET 14

Analysis of Power Cycle Aging Test for SiC MOSFET

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14th IEEE Global reliability and Prognostics and Health Management Conference, PHM-Hangzhou 2023

作者： Zheng, Zhouyou Meng, Linghui Li, Xin Ruan, Bin Cui, Haotian School of Electrical and Information Engineering Anhui University of Science and Technology Anhui Huainan China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guang dong Guang zhou China School of Information Engineering Southwest University of Science and Technology Mianyang China

ISBN: (纸本)9798350301359

Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) are gradually replacing silicon (Si)based devices as the core devices for power conversion in high-temperature, high-pressure, and high-frequency applications due to their superior material properties. The long-term reliability of SiC MOSFETs has become a research focus. Power cycling tests, an important aging test for evaluating device reliability, can reflect the reliability under real working conditions to some extent. The test is conducted using a constant on/off time mode, and the on-state resistance and body diode voltage drop of the devices are measured online during the aging test. The experimental results show that an increase in on-state resistance during power cycling tests causes an increase in junction temperature, which leads to wire bond aging and eventually results in SiC MOSFET failure. © 2023 IEEE.

关键词： failure mechanism junction temperature measurement power cycling test SiC MOSFET

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Non-destructive measurement of temperature in the micro-area wafer using Mueller matrix spectroscopic ellipsometry 8

Non-destructive measurement of temperature in the micro-area...

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8th International Workshop on Advanced Patterning Solutions, IWAPS 2024

作者： Sun, Qimeng Jin, Xing Ma, Bingxu Lei, Zhidan Liu, Xiaoli Peng, Jun Yang, Lin Calibration and Testing Center China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou510000 China The Test Center of Electronic Components China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou510000 China The Science and Technology on Reliability Physics Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou510000 China The Institute of Technological Sciences Wuhan University Wuhan430072 China

ISBN: (数字)9781510686335

ISBN: (纸本)9781510686328

As the number of 3D stacking layers continues to increase and the thermal design power of logic chips escalates, thermal management is confronted with unprecedented challenges. The temperature of the surface to be treated is also a parameter that is difficult to measure non-invasively. The standard technique is infrared (IR) pyrometry. However, due to the transparency of Si wafers in the IR spectrum, it cannot be used in the low-temperature regime (0℃ ~ 400℃). In this study, a new low-temperature thermal measurement method was developed, utilizing Mueller matrix spectroscopic ellipsometry (MMSE) combined with thermo-optical coefficients (TOC). Firstly, the coefficients of the Cauchy dispersion equation for Si-based SiO2 films were measured at different temperatures. The experimental results indicated that the refractive index of SiO2 films exhibits high sensitivity to temperature in the ultraviolet to visible spectra. Subsequently, MMSE was combined with deep learning to reverse characterize the temperature in the chip overlay region. The results indicated that effective Mueller matrix elements and multi-channel deep learning could accurately identify the temperature in the overlay region, with an accuracy of 99.81% and a recognition precision of 1K. The proposed method contributes to optimizing automatic process control, alleviating wafer deformation and overlay errors caused by thermal management, thereby enhancing the reliability of high-bandwidth memory. © 2024 SPIE.

关键词： Silicon wafers

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Study on total dose radiation effect of γ rays on β-Ga2O3SBD

Study on total dose radiation effect of γ rays on β-Ga2O3S...

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2023 Advanced Fiber Laser Conference, AFL 2023

作者： Fu, Weili Ma, Teng Zhong, Xiangli Lei, Zhifeng Wang, Jinbin Song, Hongjia Xiao, Tao Zhang, Hong Peng, Chao Zhang, Zhangang National-Provincial Laboratory of Special Function Thin Film Materials School of Materials Science and Engineering Xiangtan University Xiangtan Hunan411105 China Reliability Physics and Application Technology of Electronic Component Key Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou511370 China

ISBN: (纸本)9781510677661

Gallium oxide Ga2O3 has recently gained attention as a new power electronics semiconductor for aerospace applications. β-Ga2O3 has an extremely high bandgap energy of 4.8-4.9 eV and an expected high breakdown field of 8 MV/cm, which exceed those of traditional wide-bandgap semiconductor materials such as silicon carbide (SiC) and gallium nitride (GaN). These qualities make β-Ga2O3 a favorable choice for micro high-power and high-frequency devices. It is important to consider device application in a radiation environment. Due to its wide bandgap and high breakdown field, β- Ga2O3 has significant potential for use in Schottky barrier diodes (SBDs) in environments with extremely high radiation. In the radiation environment of space, it is crucial to contemplate the dependability of semiconductor devices in radiation, as alpha particles, gamma rays, heavy ions, X-rays, and other factors could induce single event effects, total ionizing dose effects, and displacement damage effects on semiconductor devices in spacecraft. Therefore, the impact of gamma-ray radiation with a total dose was analyzed on a new SBD device which can tolerate 650 V. The results indicate that radiation has a minor impact on the diode's forward performance. Conversely, the device's reverse electrical properties are significantly impacted by radiation. In addition, we examined the internal physical mechanism of diode performance deterioration triggered by gamma-ray radiation utilizing the outcomes of β-Ga2O3 Schottky diode radiation testing and analysis. To characterize the radiation tolerance of this material, studies on irradiation damage are required. © COPYRIGHT SPIE. Downloading of the abstract is permitted for personal use only.

关键词： Schottky barrier diodes

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MEMS sensitive structure sand and dust pollution test and its degradation characteristics 14

MEMS sensitive structure sand and dust pollution test and it...

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14th International Conference on reliability, Maintainability and Safety, ICRMS 2023

作者： Ruan, Bin Zhu, Chunlong Liu, Tingting He, Chunhua Liu, Ruiwen Huang, Qinwen School of Information Engineering Southwest University of Science and Technology Mianyang China Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory China Electronic Product Reliability Environmental Testing Research Institute Guangzhou China School of Computer Guangdong University of Technology Guangzhou China Institute of Microelectronics Chinese Academy of Science Beijing China

ISBN: (纸本)9798350329988

The sensitive structures of certain devices containing micro-electromechanical system (MEMS) must be directly exposed to the working environment, making them vulnerable to contamination by dust and other pollutants in that environment. Consequently, this contamination degrades the performance of the device, impacting both its working life and stability. Existing test methods, such as GB/T 4208-2017 and GB/T 2423.37-2006, are not entirely suitable for evaluating the sand and dust contamination test of these MEMS devices. To address these issues, a thermistor-based test structure was designed and processed to develop an evaluation method suitable for testing the sand and dust contamination sensitive MEMS structures. The test results indicate that, unlike other hermetically sealed electronic devices, the imposition of electrical stress and cycling of the operating voltage "on-off" during the test does not increase dust accumulation. Furthermore, due to sand and dust contamination, the thermistor value of the device drifts during operation. This drift primarily arises from increased thermal resistance between the heating element of the device and the surrounding environment, resulting from the accumulation of sand and dust, which results in the increase of temperature of the heating element and ultimately results in an elevated thermistor value. This study can provide support for the structural design and package design of MEMS sensitive structures, and provide a basis for the identification and inspection of related products and the development of detailed specifications. © 2023 IEEE.

关键词： Thermistors

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Fault Information Mining in Avionics Components Based on Unstructured Data 14

Fault Information Mining in Avionics Components Based on Uns...

引用

14th International Conference on reliability, Maintainability and Safety, ICRMS 2023

作者： Zhou, Zhenwei Liu, Junbin He, Shilie Li, He Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Institute Guangzhou511370 China Guangzhou Institute of Technology XD University Huangpu District Guangzhou510555 China

ISBN: (纸本)9798350329988

To address the requirements of unstructured fault data mining and statistical analysis of avionics systems, this study excavates implicit knowledge, investigates potential knowledge associations, and realizes a deep understanding of knowledge to better interpret data. Combined with recent progress of text data extraction technology, this paper studies the entity relationship extraction and failure time statistical method based on attention-based bidirectional long short-term memory to realize the statistical analysis of failure time law of components. In this study, 413 cases of unstructured fault data of avionics system components were collected, and the entity relationship extraction and failure statistical methods proposed in this paper were verified and analyzed. The results showed that the components would have a high probability of failure within 10,000 hours of each flight, and the number and time of multi-function control display failures were high. This paper proposes an unstructured data analysis method for avionics systems, which can provide a reference for a maintenance engineer, provide a basis for the management decision-making of avionics maintenance institutions, and improve the maintenance quality of avionics systems. © 2023 IEEE.

关键词： Decision making

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A novel learning approach to MIMO networked control systems with uncertain parameters 14

A novel learning approach to MIMO networked control systems ...

引用

14th IEEE Global reliability and Prognostics and Health Management Conference, PHM-Hangzhou 2023

作者： Jia, Hanguang School of Automation Science and Engineering South China University of Technology National Key Laboratory of Science and Technology on Reliability Physics and Application of Electronic Component The Fifth Electronics Research Institute of the Ministry of Industry and Information Technology Guangzhou China

ISBN: (纸本)9798350301359

This paper proposes a new learning approach to solve control design problems involving uncertain parameters in MEMO networked control systems. This approach combines neural network technology with control system modeling in real-time through learning and adaptation of data, thereby achieving stability and optimization of network-based control systems. The authors first establish a network-based control model and then improve it by replacing the linear parameters with nonlinear ones. To ensure real-time and stable communication between devices, this method also uses adaptive iterative learning control (AILC) technology and error feedback control technology. A network-based control system is used to verify the effectiveness of the proposed approach. The results show that this approach is effective in achieving sufficient communication between devices, adapting to uncertain parameters, and improving control performance. © 2023 IEEE.

关键词： AILC communication error feedback control MIMO networked control systems uncertain parameters

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Using Load Transient Waveform to Analyze Fault Propagation Mechanism in DC-DC Switching Power Supply

Using Load Transient Waveform to Analyze Fault Propagation M...

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2024 Photonics and Electromagnetics Research Symposium, PIERS 2024

作者： Wan, Junliang Yu, Pengfei Cai, Qiang-Ming Cao, Xin Zhou, Longjian Li, Haoran Zhu, Yuyu Fan, Jun Laboratory of Science and Technology on Reliability Physics and Application of Electronic Component Guangzhou China Southwest University of Science and Technology School of Information Engineering Mianyang China Robot Technology Used for Special Environment Key Laboratory of Sichuan Province Mianyang China Tianfu Institute of Research and Innovation China

ISBN: (纸本)9798350375909

The degradation of certain components within DC-DC power supplies can lead to abnormal performance, resulting in the occurrence of faults. The degradation of components can cause changes in output voltage and current, and the different degradation characteristics of components have different impacts on the characteristics of output parameters. Therefore, it is necessary to master this impact relationship, that is, the fault propagation mechanism can be used to effectively diagnose faults and manage health. Studying the fault propagated mechanism is an important prerequisite for fault diagnosis. Output terminals of DC-DC power supply are usually connected in parallel with electrolytic capacitors. The function of electrolytic capacitors is to filter, filtering out most of the AC part of the output voltage, and reducing the ripple of the output voltage. Electrolytic capacitors are the most vulnerable components to failure in switching power supplies, with approximate 60% of failed components being electrolytic capacitors. Therefore, the fault propagation mechanism of electrolytic capacitors is a key research topic. Most research focuses on the fault propagation mechanism based on steady-state output signals. This article studies the fault propagation mechanism based on transient output signals. Through experimental testing, the impact of parameter degradation of electrolytic capacitors on the transient waveform of output voltage and the mapping relationship between capacitor degraded parameters and transient waveform are studied. The method is to analyze the voltage waveform when the current step changes using equivalent degradated experiments of capacitors. Its advantage lies in the fact that transient waveforms are more sensitive than steady-state waveforms and require lower sampling rates, making it easier to analyze the degradated characteristics of electrolytic capacitors. For power supplies with simple structures, data is collected through simulation. For commerc

关键词： Capacitor bank

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Investigation on the Degradation Mechanism of AlGaN/GaN HEMTs under the Effect of Microwave Pulses at Different Powers 14

Investigation on the Degradation Mechanism of AlGaN/GaN HEMT...

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14th IEEE Global reliability and Prognostics and Health Management Conference, PHM-Hangzhou 2023

作者： Yang, Fanfeng Liao, Min Zeng, Binjian Yang, Peiliang Chen, Yiqiang College of Materials Science and Engineering Xiangtan University Xiangtan China The No.5 Electronics Research Institute of the Ministry of Industry and Information Technology The Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China

ISBN: (纸本)9798350301359

We have investigated the effect of microwave pulse stress of different powers on AlGaN/GaN HEMTs. The dc characteristics of the devices were first scrutinized. The results indicate that the electrical characteristics of the devices are degraded after stress. The saturation drain-source current decreases from 681.8 mA to 246.5 mA, a decrease of 63.8 %, at the power 40 dBm. And at the power 45 dBm, the saturation drain-source current drops even more, from 662.3 mA to 176.7 mA, a drop of 73.3 %. The stress results in significant positive drift of threshold voltage and decrease of gate leakage current. And the degradation is more obvious with increasing microwave pulses power. Then, the internal defects of the device are characterized by low-frequency noise method, and the mechanism of device degradation is discussed. At the power of 45 dBm, the internal defect density of the device doubles, resulting in more electrons being captured at the channel. This is useful for the reliability level of future devices and practical applications. © 2023 IEEE.

关键词： AlGaN/GaN HEMTs degradation low-frequency noise microwave pulses power

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