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检索条件"机构=Science and Technology on Reliability Physics and Application of Electronic"

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Total dose dependence of hot carrier injection effect in the NMOS devices

Total dose dependence of hot carrier injection effect in the...

引用

IEEE Conference on Electron Devices and Solid-State Circuits

作者： Yujuan He Xiaowen Zhang Science and Technology on Reliability Physics and Application of Electrical Component Laboratory Guangzhou China

The total dose dependence of hot carrier injection (HCI) effect in the 0.35μm NMOS Devices was studied in this paper. It was indicated that the threshold voltage shift of NMOS devices with HCI test after 100krad (Si) total dose radiation was more than the devices without radiation. It was related to irradiation annealing effect and hot electrons being trapped by irradiation interface traps.

关键词： MOS devices MOSFET circuits Facsimile Annealing Silicon

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The reliability study of 0.13μm CMOS process

The reliability study of 0.13μm CMOS process

引用

International Conference on reliability, Maintainability and Safety,ICRMS

作者： Xiaowen Zhang Yunfei En Science and Technology on Reliability Physics and Application of Electronic Component Laboratory CEPREI Tianhe District Guangzhou P.R. China

When the Minimum channel length shrink to 0.13μιη, As the device geometry size scaling down while the operation voltage of the device decreased, but the electric field increase. The current density is still high in interconnect line, various failure mechanisms still exist in the process generation of copper interconnect/low k dielectric integrated, the reliability is still a very important problem. By using accelerated test, the reliability of the main failure mechanisms have been evaluated, the results showed that the lifetimes of main failure mechanism can achieve the requirements of more than 10 years lifetime. In the same time, NBTI effect will become the main failure mechanism in ultra deep sub-micron CMOS process when Minimum channel length becomes less than 0.13 μιη.

关键词： reliability Failure analysis Logic gates Human computer interaction Dielectrics Stress Copper

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Effective methods for evaluation of high power laser diode quality and reliability

Effective methods for evaluation of high power laser diode q...

引用

International Conference on reliability, Maintainability and Safety,ICRMS

作者： Guoguang Lu Shaofeng Xie Yun Huang Junsheng Cao Science and Technology on Reliability Physics and Application of Electronic Component Laboratory CEPREI Guangzhou China State Key Laboratory of Luminescence and Application Fine Mechanics and Physics Chinese Academy of Science Changchun China

ISBN: (纸本)9781479966332

In this paper, a high power laser diode electrical derivative parameters test instrument is developed, the wavelength range of this instrument is between 400nm to 1300nm, the power range of this instrument is between 1W to 15W. The relationships between the device reliability and the electrical derivative parameters are discussed. Then the measurements of 20 high power 808nm AlGaAs/GaAs laser diodes by using this instrument combined with the aging test results demonstrate that the electrical derivative parameters can use to evaluate the laser diode reliability and quality effectively.

关键词： Diode lasers reliability Junctions Instruments Aging Semiconductor lasers Resistance

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Optimal design of PBGA mixed solder joints under random vibration

Optimal design of PBGA mixed solder joints under random vibr...

引用

International Conference on reliability, Maintainability and Safety,ICRMS

作者： Tao Lu Bin Zhou Kailin Pan Yubin Gong Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China School of Mechanical and Electrical Engineering Guilin University of Electronic Technology Guilin China

ISBN: (纸本)9781479966332

This article provides a method to perform finite element analysis (FEA) and theoretical analysis on stress and strain characteristics of plastic ball grid array (PBGA) assembly under the random vibration environment. For the mixed solder joints, ball diameter, ball pitch and ball array were selected as three critical parameters. By using a L 9 (3 4 ) orthogonal matrix, the mixed solder joints of PBGA components which have nine different technology parameter combinations were designed. In order to investigate the distribution of stress and strain of mixed solder joints, random vibration simulation for the PBGA assembles was simulated. Based on the stress value, range analysis was researched. The results indicate that the maximum stress of PBGA occurs at the outside corner of solder joints matrix and concentrates on the interface between the solder ball and pad near the PCB. In this study, the stress of mixed solder joints is affected by solder ball array, ball pitch, ball diameter in a descending order, and the maximum stress of the mixed solder joints is inversely proportional to all of them. The results lay a basis for high reliability design of PBGA assembly for engineering application.

关键词： Soldering Stress Vibrations reliability Strain Arrays

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Electromagnetic interference effects in the bipolar voltage comparators

Electromagnetic interference effects in the bipolar voltage ...

引用

International Conference on reliability, Maintainability and Safety,ICRMS

作者： Chengjin Li Yuan Liu Jianbo Liu Aixiang Wei Yunfei En School of Material and Energy Guangdong University of Technology Guangzhou China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China

ISBN: (纸本)9781479966332

Electromagnetic interference effects in the bipolar voltage comparator was investigated in this paper. By using of bulk current injection (BCI), the coupling current stimulated by high power electromagnetic pulse was simulated. The experimental results shown that the aberrations such as pulse deriving and pulse width altering will come into being in the output waveforms of LM139 after current injection respectively. Furthermore, the coupling effect of pulse deriving and pulse width broadening were observed simultaneously in the higher level current injections.

关键词： EMP radiation effects Transient analysis Monitoring Laser beams Power lasers Semiconductor lasers

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Simulations of single event transient effects in the LM139 voltage comparator

Simulations of single event transient effects in the LM139 v...

引用

International Conference on reliability, Maintainability and Safety,ICRMS

作者： Jianbo Liu Yuan Liu Jinli Cheng Yunfei En Ting Zhang Yujuan He School of Material and Energy Guangdong University of Technology Guangzhou China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China

ISBN: (纸本)9781479966332

Single event transient effect in the linear voltage comparator is investigated in this paper. The circuit level simulation is performed to analyze the output response of LM139 voltage comparators with single event transients (SETs). Simulation results show that input stage and two current sources are the most sensitive parts to the single event transient effects. The output responses were shown as transient pulses with different width. Based on the simulation results, the susceptive parts of a LM139 voltage comparator are acquired. Furthermore, the results above can also be helpful to further harden designs of linear ICs.

关键词： Transistors Transient analysis Integrated circuit modeling Single event transients Simulation Analytical models Ion beams

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Variation of offset voltage in the irradiated bipolar voltage comparators

Variation of offset voltage in the irradiated bipolar voltag...

引用

International Conference on reliability, Maintainability and Safety,ICRMS

作者： Jianbo Liu Yuan Liu Jinli Cheng Yunfei En Ting Zhang Yujuan He School of Material and Energy Guangdong University of Technology Guangzhou China Science and Technology on Reliability Physics Application of Electronic Component Laboratory Guangzhou China

ISBN: (纸本)9781479966332

Total ionizing dose (TID) radiation effects in the bipolar voltage comparator with different biases and dose rates were investigated in this paper. The experimental results show that offset voltages shift after irradiation. Dominated by the current gain degradation of differential PNP transistors, the shifts of offset voltage and output characteristics were significantly affected by biases at high dose rate. Dominated by the current gain degradation of NPN transistors, the shifts of offset voltage and output characteristics were similar in all biases at low dose rate.

关键词： Degradation Junctions Radiation effects Bipolar transistors Interface states Computational modeling

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A grid intensity map-based source model for monte carlo modeling of imrt field irradiation 18

A grid intensity map-based source model for monte carlo mode...

引用

18th Topical Meeting of the Radiation Protection and Shielding Division of ANS, RPSD 2014

作者： Hui, Lin Jingfeng, Cai Yumei, Dai Xi, Pei Ruifen, Cao Zhi, Chen School of Electronic Science and Application Physics Hefei University of Technology Hefei China FDS Team of Institute of Nuclear Energy Safety Technology Chinese Academy of Sciences Hefei China School of Nuclear Science and Technology University of Science and Technology of China Hefei China

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Evaluation of PCB constraint on hermeticity reliability of DC/DC power module by FEA method

Evaluation of PCB constraint on hermeticity reliability of D...

引用

International Conference on reliability, Maintainability and Safety,ICRMS

作者： Ling Zeng Xunping Li Xiaoqi He Guoyuan Li Hengwei Bao Zhangchao Wang Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China East China Research Institute of Microelectronic Hefei China

ISBN: (纸本)9781479966332

The effects of PCB parameters and boundary constraint condition on stress distribution of glass insulator in DC/DC power module are investigated by using finite element analysis. Results show that the constraint condition and thickness of printed circuit board (PCB) have significant effect on the stress of glass insulator compared with the size of PCB. The value of maximum equivalent stress in glass insulator decrease when PCB boundary is constrained. Suitable thickness of PCB would be benefit to alleviate the maximum equivalent stress of glass insulator.

关键词： Glass Insulators Multichip modules reliability Tensile stress Solid modeling

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Key factors on the accuracy of measurement temperature by using infrared thermometer

Key factors on the accuracy of measurement temperature by us...

引用

International Conference on reliability, Maintainability and Safety,ICRMS

作者： Ling Zeng Xunping Li Xiaoqi He Guoyuan Li Zhangchao Wang Hengwei Bao Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China East China Research Institute of Microelectronic Hefei China

ISBN: (纸本)9781479966332

The key factors on measurement accuracy of infrared thermometer are investigated by experimental analysis. In this study, the temperature of a certain DC/DC power module is measured under various kinds of condition by using infrared thermometer(FEI, MWIR-512). It is found that the electric parameters, magnification of objective lens and measurement environment condition have significant effect on the temperature measurement accuracy.

关键词： Temperature measurement Multichip modules Accuracy Lenses Temperature Transforms Power measurement

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