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检索条件"机构=Science and Technology on Reliability Physics and Application of Electronic"

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Degradation in AlGaN/GaN HEMT under high temperature reverse bias stress

Degradation in AlGaN/GaN HEMT under high temperature reverse...

引用

International Conference on reliability, Maintainability and Safety,ICRMS

作者： Yuansheng Wang Chang Zeng Ping Lai School of Material and Energy Guangdong University of Technology Guangzhou Guangdong CN Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China

ISBN: (纸本)9781479966332

In this work, we investigate the time evolution of electrical degradation in AlGaN/GaN high electron mobility transistors after high temperature reverse bias(HTRB) stress. The threshold voltage shows a positive shift after stress, and then turns to negative shift. Comparing with the stressed and fresh devices, the fresh devices have more trap effect than the stressed which have stressed over 1000hours at high temperature. However, both devices have the same permanent degradation after stress. In fact, it is the inverse piezoelectric effect in which a defect formation could happen, due to the mechanical strain produced by electric field. Therefore, the trapping behaviors chiefly caused by negative charging in the state of surface. A lower potential of drain was applied after stressed, which in order to avoid a permanent degradation.

关键词： Degradation Stress Charge carrier processes Logic gates Gallium nitride HEMTs Aluminum gallium nitride

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Magnetic microscopy for 3D devices failure localization and analysis

Magnetic microscopy for 3D devices failure localization and ...

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IEEE Conference on Electron Devices and Solid-State Circuits

作者： Yuan Chen Na Lin Science and Technology on Reliability Physics and Application of Electronic Component Laboratory The 5th Electronic Institute of MII Guangzhou China South China University of Technology Guangzhou Guangdong CN

ISBN: (纸本)9781479923366

The magnetic microscopy was successfully applied to localize the failure site of the failed SDP memory sample before the decapsulation of the failed sample. The magnetic microscopy pointed the specific (X, Y, Z) coordinate of the failure site and the failure site was confirmed by optical microscopy and SEM analysis. The failure analysis case demonstrated in this article showed the effectiveness of the magnetic microscopy in the failure localization for 3D device.

关键词： Magnetic resonance imaging Magnetic analysis Substrates Microscopy Magnetic force microscopy Optical microscopy Optical imaging

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Effect of reflow profile parameters on shear performance of Sn3.0Ag0.5Cu/Cu solder joint

Effect of reflow profile parameters on shear performance of ...

引用

International Conference on reliability, Maintainability and Safety,ICRMS

作者： Xin Wang Xunping Li Kailin Pan Bin Zhou Tingbiao Jiang Science and Technology on Reliability Physics Application of Electronic Component Laboratory Guangzhou China School of Mechanical and Electronic Engineering Guilin University of Electronic Technology Guilin China School of Mechanical and Electronic Engineering Guilin University of Electronic Technology China

ISBN: (纸本)9781479966332

The relationship between reflow profile parameters (soak temperature and soak time, reflow temperature and reflow time, cooling rate) and shear performance of Sn3.0Ag0.5Cu/Cu solder joint was investigated. It was found that soak time, reflow temperature and cooling rate had significant influence on the shear performance of Sn3.0Ag0.5Cu/Cu. Adequately prolong soak time and increase reflow temperature would help to improve the shear force of joint. The fast cooling rate is benefit to improve the shear performance of SAC/Cu joint. However, too fast cooling rate may result in residual stress in solder joint.

关键词： Soldering Cooling Force Joints Microstructure reliability Surface treatment

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Effect of nano-dopant on intermetallic compounds growth in Sn-3.0Ag-0.5Cu-xBi solder joints during aging process

Effect of nano-dopant on intermetallic compounds growth in S...

引用

The 15th International Conference on electronic Packaging technology (ICEPT 2014) ) (第十五届电子封装技术国际会议)

作者： Y.Tang B.Zhou Z.Z.Wu G.Y.Li J.H.Huang School of Electronic and Information Engineering South China University of TechnologyGuangzhouChin Science and Technology on Reliability Physics and Application Technology of Electronic Component Lab School of Electronic and Information Engineering South China University of TechnologyGuangzhouChin

The effect of nano-Bi particles on the growth of intermetallic compound(IMC)between Sn-3.0Ag-0.5Cu-xBi(x=0.0,0.8,1.5,2.5,3.5,and 4.5 wt.%)solder and Cu substrate during aging process at temperatures of 120,150,and 190℃ has been investigated in this *** electron microscopy(SEM)was used to observe the microstructural evolution of the solder joints and measure the thickness of IMC *** dispersive X-ray(EDX)was adopted to identify the composite of the IMC *** activation energies and growth rates of the IMC layer were *** show that adding nano-Bi into Sn-3.0Ag-0.5Cu solder can increase activation energy and thus reduce the atomic diffusion rate,so as to suppress the excessive growth of the IMC *** solder joints containing about 0.8wt.%nano-Bi has the highest activation energy and the lowest growth *** images reveal that with an increase in nano-Bi to 0.8 wt.%,the number of small particles precipitated along grain boundary reaches *** on the observation of the microstructural evolution of the solder joints,a grain boundary pinning mechanism for inhibition of the IMC grow due to nano-Bi addition is proposed.

关键词： lead-free solder nano-dopant intermetallic growth activation energy

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A reliable MEMS gyroscope with optimization design for closed loop control of the sense mode

A reliable MEMS gyroscope with optimization design for close...

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IEEE Conference on Electron Devices and Solid-State Circuits

作者： Chunhua He Qinwen Huang Yunfei En Qiancheng Zhao Zhenchuan Yang Guizhen Yan Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Electronics Research Institute of the Ministry of Industry and Information Technology Guangzhou Guangdong P. R. China

This paper presents a novel optimization design method for the closed loop control of the sense mode of a MEMS gyroscope, which aims at improving the performances and reliability of the control system.

ISBN: (纸本)9781479923366

关键词： Optimization Fabrication Micromechanical devices reliability engineering Gyroscopes Estimation

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A prognostic cell for electromigration failure of integrated circuit

A prognostic cell for electromigration failure of integrated...

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International Conference on reliability, Maintainability and Safety,ICRMS

作者： X. B. Xu Y. Q. Chen Y. D. Lu B. Wang School of Materials Science and Engineering South China University of Technology Guangzhou China Science and Technology on Reliability Physics Application of Electronic Component Laboratory Guangzhou China School of Electronic and Information Technology South China University of Technology Guangzhou China

As we know, expendable prognostic cell, such as "canary" and fuse, is a kind of method that can be applied for prognostics, and it fails earlier than the host product, which provides advance warning of failure. In this paper, a prognostic cell was proposed for electromigration (EM) failure of integrated circuit(IC), and it is composed of stress and detection module, two-stage low gain amplifier, high gain comparator, non-overlapping clock generation module, bias voltage generation module, and output module. The prognostic cell was designed to fail faster than host circuit, and was successfully simulated on the base of SMIC 0.18 urn mixed-signal CMOS process model. The output of the prognostic cell could accurately flip from low voltage to high voltage as the amount of resistance increased by more than 20% caused by EM, and the function was verified experimentally. This indicates the impending failure of host circuit, which shows that the present prognostic cell can be used to provide advance warning of EM failure. The research results are useful for the reliability insurance and failure prediction of IC.

关键词： Stress Electromigration Integrated circuits Clocks Resistance Computer architecture Voltage measurement

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Optimal Power Flow by Black Hole Optimization Algorithm

Optimal Power Flow by Black Hole Optimization Algorithm

引用

IEEE Canada Electric Power Conference, EPEC

作者： Zakareya Hasan Mo E. El-Hawary Science and Technology on Reliability Physics and Application of Electrical Component Laboratory Guangzhou R. P. China

In this paper, a black hole optimization algorithm (BH) is utilized to solve the optimal power flow problem considering the generation fuel cost, reduction of voltage deviation and improvement of voltage stability as an objective functions. The black hole algorithm simulate the black hole phenomenon which relay on tow operations, the star absorption and star sucking. The IEEE 30-Bus and IEEE 57-Bus systems are used to illustrate performance of the proposed algorithm and results are compared with those in literatures.

关键词： Fuels Optimization Linear programming Reactive power Sociology Statistics Power system stability

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Bias dependence of total dose effects in the irradiated EEPROM devices

Bias dependence of total dose effects in the irradiated EEPR...

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International Conference on reliability, Maintainability and Safety,ICRMS

作者： Yujuan He Yuan Liu Science and Technology on Reliability Physics and Application of Electrical Component Laboratory Guangzhou R. P. China

ISBN: (纸本)9781479966332

Total ionizing dose irradiation effect in EEPROM Devices with different bias was studied in this paper. Three biases, concluded with NONE bias, Zero bias and Work bias, were used in EEPROM devices with “1” state and "0" state in this paper. It was indicated that the threshold voltage shift negatively as total dose increased in EEPROM devices with "1" state and the threshold voltage shift positively as total dose increased in EEPROM devices with "0" state, and the Work bias was the worst irradiation bias regardless of "1" state or "0" state.

关键词： EPROM Radiation effects Threshold voltage Logic gates Charge carrier processes reliability Nonvolatile memory

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Location techniques of failure analysis ESD damage in electronic component

Location techniques of failure analysis ESD damage in electr...

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International Conference on reliability, Maintainability and Safety,ICRMS

作者： Ping Lai Youliang Wang Xiaosi Liang Xianjun Kuang Jinlin Zou Science and Technology on Reliability Physics Application of Electronic Component Laboratory Guangzhou P. R. China Reliability Research and Analysis Center CEPREI Guangzhou P. R. China

ESD damage is often slight and even imperceptible. It is important to locate the damage in order to make sure if the damage is caused by ESD or not, before correct improvements can be adopted. Some location techniques... 详细信息

ISBN: (纸本)9781479966332

关键词： Electrostatic discharges Failure analysis Scanning electron microscopy Optical microscopy Integrated optics Optical imaging

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Effect of gold wire configuration parameters on the reliability of the stacked die package

Effect of gold wire configuration parameters on the reliabil...

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International Conference on reliability, Maintainability and Safety,ICRMS

作者： Y. Tang P. F. Zhang B. Zhou G. Y. Li College of Automation Zhongkai University of Agriculture and Engineering Guangzhou China School of Electronic and Information Engineering South China University of Technology Guangzhou China Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory Guangzhou China

Based on the module design of DTV receiver subsystem, effect of gold wire configuration parameters on the reliability of stacked die package for CPU and DDR chips was investigated by finite element method (FEM). In order to meet the requirement of the minimized package and rapid signal transmission between chips, the BGA package suitable for minimization was selected as packaging type, the 3D stacked die package was adopted as packaging structure, and wire was used as interconnection. Results show that the wire geometric parameters affected the quality of wires. With an increase in loop height, the stress of joints decreases. However, the central portion of wire deformation increases and results in short-circuit between fine pitch wires. Hence, the loop height of 150μm was optimized for this special package. With an increase in horizontal spacing of wire, the stress of joints decreases. When the horizontal spacing of wire is greater than 7mm, serious deformation appears at the central of wire. Thus, the horizontal spacing of wire might be controlled in the range of 1-6mm. When the vertical spacing of pad ranges from 0.2mm to 1.2mm, the stress of solder joints firstly increases and then decreases, and the central portion of wire deformation increases slightly. The optimized vertical spacing of pad is 0.2mm, 0.5mm, and 0.7mm. Results of this study could be a good reference for the selection of wire configuration of the stacked die package.

关键词： Wires Stress Joints Strain Bonding Gold reliability

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