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International Conference on reliability, Maintainability and Safety,ICRMS

作者： Long Yue Yiyong Wu Qiujiao Fu Yanqing Zhang Science and Technology on Reliability Physics Application of Electronic Component Laboratory Guangzhou China CPI JiangXi Nuclear Power Co. LTD JiuJiang China Harbin Institute of Technology Harbin China

ISBN: (纸本)9781479966332

In this paper, the degradation and annealing behavior of irradiated Ga 0.5 In 0.5 P/GaAs/Ge solar cells by 170 keV proton were investigated through light I-V and dark I-V analysis. Ga 0.5 In 0.5 P/GaAs/Ge solar cells were firstly irradiated by 170 keV proton with faience up to 1×10 12 p/cm 2 using equivalent ground simulation facility. The results indicated that 170 keV proton irradiation could introduce large amount of vacancies into base region of solar cells, and induce the degradation of light I-V properties of solar cells. The irradiated solar cells were annealed using isothermal annealing technique at 423 K It was shown that after annealing process, the open-circuit voltage (V oc ), short-circuit current (I sc ) and maximum power (P max ) of irradiated Ga 05 In 05 P/GaAs/Ge solar cells recovered with annealing time firstly, and then reach to a saturated level. Four parameter including series resistance (R s ), shunt resistance (R sh ), diffusion-junction reverse saturation current (I sl ) and recombination-junction reverse saturation current (I sc ) can be extracted from dark I-V curves of solar cells by non-linear numerical fitting. The results of evolution of light I-V and dark I-V indicated defects in the region near the junction show longer-time annealing dynamic behavior compared with defects in junction region.

关键词： Photovoltaic cells Annealing Gallium arsenide Junctions Protons Radiation effects Degradation

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Study on fatigue ductility coefficient and life prediction for mixed solder joints under thermal cycle loads

Study on fatigue ductility coefficient and life prediction f...

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International Conference on reliability, Maintainability and Safety,ICRMS

作者： Bin Zhou Tao Lu Jincheng You Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China School of Mechanical and Electrical Engineering Guilin University of Electronic Technology Guilin Guangxi CN School of Mechanical and Electrical Engineering Guilin University of Electronic Technology Guangzhou Guangdong CN

ISBN: (纸本)9781479966332

Lead-free solder ball of PBGA with SnPb solder paste in the weight ratio of 1:0.5 was mounted for mixed soldering experimental sample. Temperature cycling experiment was carried out at -55 °C ~ +125 °C conditions. The event detector was employed to monitor the solder joint failure in realtime in terms of IPC-9701 standard, and the Weibull curve of mixed solder joint failure was established. Thermal fatigue ductility coefficient of mixed solder joints was deduced based on the failure data of solder joints and IPC-SM-785 standard. Moreover, the microstructure and the failure mode of mixed solder joints were analyzed during different thermal cycles using scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS). The results showed that the thermal fatigue ductility coefficient of mixed solder joints was 0.8306, which is greater than 0.325 of Sn63Pb37 solder joints because of the larger elastic modulus of mixed solder increasing its brittleness. The mixed solder joints cracking in temperature cycling test begin from the lead-rich region in corners. Crack interface presents grain boundary slip characteristics, which suggest the grain boundary dislocations caused by shear stress is still the main reason of solder joints cracking. The growth of IMC layer in mixed solder joints is not sensitive to temperature cycling condition, and there are lead-rich phase, Cu 6 Sn 5 alloys and Ag 3 Sn alloys coexistence inside the mixed solder joints after thermal cycles. Further research for long-term reliability regular data is still needed.

关键词： Soldering Fatigue Lead reliability Microstructure Scanning electron microscopy

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Thermal coupling effects and thermal resistance matrix research of multi-heat sources MCM

Thermal coupling effects and thermal resistance matrix resea...

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International Conference on reliability, Maintainability and Safety,ICRMS

作者： Ji Cheng Xiaoqi He Xunping Li Bin Zhou Hengwei Bao Lianrong Zhou Zhangchao Wang School of Materials and Energy Guangdong University of Technology Guangzhou China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory Guangzhou China East China Research Institute of Microelectronic Hefei China

ISBN: (纸本)9781479966332

High density assembly results in evident thermal coupling effect among chips in MCM. Junction temperature is decided by self-heating effect and thermal coupling effect. It can be accurately calculated by using the thermal resistance matrix. This paper focused on thermal coupling effect and presented heat conduction routes and thermal resistance model of three different MCM (lateral-chip, stacked-chip and lateral-and-stacked chip). Based on linear superposition theory, the thermal resistance matrix was established by FEA simulation, the model of calculating junction temperature was obtained by thermal resistance matrix. The model was verified by infrared thermal imaging equipment and the relative error was less than 2%.

关键词： Thermal resistance Junctions Couplings Thermal conductivity Thermal analysis Heating

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The effect of Pb content on the solidification behavior and shear performance of Sn3.0Ag0.5Cu/Cu joint

The effect of Pb content on the solidification behavior and ...

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International Conference on reliability, Maintainability and Safety,ICRMS

作者： Xunping Li Bin Zhou Xiongfeng Wei Yunfei En Xin Wang Science and Technology on Reliability Physics and Application of Electronic Component Laboratory The 5 Electronics Research Institute of Ministry of Information Industry. Guangzhou P. R. China Guilin University of Electronic Technology Guilin Guangxi CN

ISBN: (纸本)9781479966332

The effect of Pb content in the rang of 0~37wt.% on solidification behavior and shear performance of Sn3.0Ag0.5Cu/Cu joint was investigated. It was shown that Pb contamination showed a significant influence on the solidification behavior of Sn3.0Ag0.5Cu/Cu joint. A little amount of Pb resulted in the formation of ternary eutectic Sn-Pb-Ag phase with a low melting temperature and a mushy region between primary solidification phase and Sn-Pb-Ag phase during solidification stage of mixed joint. The mushy zone decreased with the increasing of Pb content and disappeared when Pb content in solder matrix of joint exceeded 18.34wt.% The addition of Pb in Sn3.0Ag0.5Cu/Cu joint has been shown to be beneficial to improve the shear force of SAC/Cu joint by using ball shear test method and the shear force of single interface mixed solder joint was in parabolic relationship with Pb content. The formation of ternary eutectic Sn-Pb-Ag phase and mushy zone in solidification stage had no obvious influence on the shear force of mixed solder joint.

关键词： Lead Joints Soldering Microstructure Force reliability

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Supply voltage dependence of single event upset sensitivity in diverse SRAM devices

Supply voltage dependence of single event upset sensitivity ...

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International Conference on reliability, Maintainability and Safety,ICRMS

作者： Zhangang Zhang Jie Liu Youmei Sun Mingdong Hou Teng Tong Song Gu Tianqi Liu Chao Geng Kai Xi Huijun Yao Jie Luo Jinglai Duan Dan Mo Hong Su Zhifeng Lei Yunfei En Yun Huang Science and Technology on Reliability Physics Application of Electronic Component Laboratory Guangzhou China Material Research Center Chinese Academy of Sciences Lanzhou China Institute of Modern Physics Chinese Academy of Sciences Lanzhou Gansu CN

ISBN: (纸本)9781479966332

Experimental evidences are presented showing the variety of supply voltage dependence of single event upset (SEU) sensitivity in diverse SRAM devices. Devices under test (DUTs) from Alliance Memory, ISSI and IDT companies with different technologies were irradiated by several kinds of heavy ions at Heavy ion Research Facility in Lanzhou (HIRFL) cyclotrons. For the Alliance 256 kb SRAM device, SEU cross section increases by more than one order of magnitude as supply voltage decreases from 5.0 V to 3.0 V. SEU data of Alliance 64 kb SRAM also exhibits significant supply voltage dependence. The reduction of critical charge is the predominant factor worsening the device performance. While for the Alliance 8 Mb, ISSI 2 Mb and IDT 256 kb SRAM devices, no obvious trend was observed, which is attributed to the negligible net contribution of competing mechanisms. Those results suggest that the worst-case supply voltage for evaluation of SEU sensitivity depends on the test devices.

关键词： Random access memory Single event upsets Silicon MOSFET Sensitivity Transient analysis

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Thermal analysis of high power laser diodes by electro-thermal indirect coupling finite-element method

Thermal analysis of high power laser diodes by electro-therm...

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International Conference on reliability, Maintainability and Safety,ICRMS

作者： Mingming Hao Xia Liu Ligang Tan Hongbo Zhu Science and Technology on Reliability Physics Application of Electronic Component Laboratory Guangzhou China Software Quality Engnerring Research Center China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China State Key Lab on High Power Semiconductor lasers Changchun University of Science and Technology Changchun China State Key Laboratory of Luminescence and Application Chinese Academy of Sciences Changchun China

ISBN: (纸本)9781479966332

Since the invention of laser diodes, research on thermal management has become a hot topic during last decade because the problem not only restrict output power of the laser diodes but also influence the reliability of the devices. Electro-Thermal indirectly coupling method was used to calculate temperature distribution of a CW p-side-down high power diode laser, the result show that the highest temperature of p-side-down laser diode is just 34.7°C, which is lower than that of 51.1'C calculated by simply thermal method. Experiment result indicated that the junction temperature is 36.7°C which is more closer to the indirectly coupling method. Temperature of p-side-up diode laser is also studied by FEM and the result shows that the temperature is as high as 90.9 °C, therefore the p-side-down method is priority than p-side-up method. Relationship between emitter width/cavity length and junction temperature has also been investigated, the result shows that with the increasing of emitter width and cavity length the junction temperature reduce rapidly. Thermal effect of the diode laser working at QCW mode has also been studied. When the repetition rate is 1kHz and pulse width is 200μs, the temperature at end of period is equal to ambient temperature even the peak current reach to 1000A. The temperature at end of period is also equal to ambient temperature when the pulse width is at 600μs. But when the repetition rate increase to 6kHz, the temperature at end of period would be increased rapidly with the peak current is 255A.

关键词： Diode lasers Heating Temperature distribution Junctions Finite element analysis Semiconductor lasers Couplings

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Enhanced Radiation Sensitivity in Short-Channel Partially Depleted Silicon-on-Insulator n-Type Metal-Oxide-Semiconductor Field Effect Transistors

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Chinese physics Letters 2013年第9期30卷 185-189页

作者： PENG Chao ZHANG Zheng-Xuan HU Zhi-Yuan HUANG Hui-Xiang NING Bing-Xu BI Da-Wei State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050 Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory Guangzhou 510610

The total ionizing dose effects of partially depleted silicon-on-insulator(SOI)transistors in a 0.13𝜈m technology are studied by^(60)Co𝛿-ray *** enhanced drain-induced barrier lowering(DIBL)under different bias conditions is related to the parasitic bipolar in the SOI transistor and oxide trapped charge in the buried oxide,and it is experimentally observed for short channel *** enhanced DIBL effect manifests as the DIBL parameter increases with total *** doping concentration is a key factor affecting the total ionizing dose effect of the *** low body doping transistor exhibits not only significant front gate threshold voltage shift as a result of the coupling effect,but also great off-state leakage at high drain voltage due to the enhanced DIBL effect.

关键词： drain transistor bipolar

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RETRACTED ARTICLE: Measurement of ESD protection structure irradiation degradation using TLP method

RETRACTED ARTICLE: Measurement of ESD protection structure i...

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2013 International Conference on Quality, reliability, Risk, Maintenance, and Safety Engineering, QR2MSE 2013

作者： Shi, Qian Xiao, Qing-Zhong Liu, Yuan En, Yun-Fei Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Produce Reliability and Environmental Testing Research Institute Guangzhou China

ISBN: (纸本)9781479910144

Ionization radiation causes ESD protection structure of integrated circuit degradation. A new method using Transmission Line Pulse (TLP) test is introduced in this article; this method gives more detailed information of the ESD protection structure's degradation. Turn-on voltage, hold voltage, turn-on resistance of two type ESD protection structures are measured before and after TID radiation test, results are discussed. © 2013 IEEE.

关键词： Electrostatic discharge

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RETRACTED ARTICLE: The failure mode and mechanism analysis of filament in heater of traveling wave tube

RETRACTED ARTICLE: The failure mode and mechanism analysis o...

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2013 International Conference on Quality, reliability, Risk, Maintenance, and Safety Engineering, QR2MSE 2013

作者： Song, Fangfang He, Xiaoqi En, Yunfei Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou Guangdong China

ISBN: (纸本)9781479910144

Traveling wave tube (TWT) is a type of microwave vacuum electronic component. TWT often works under harsh mechanical environment stress, such as vibration, shock. The stress leads to the open circuit of filament in heater, which results in the change of inner structure and electric performances, even failure. This paper introduced a failure case of TWT in use. Failure mode and failure mechanism of filament in heater of a typical TWT was analyzed in this paper. © 2013 IEEE.

关键词： Failure (mechanical)

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Modal and harmonic response analysis of PBGA and S-N curve creation of solder joints

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Sensors and Transducers 2013年第12期161卷 311-317页

作者： Guo, Yu Pan, Kailin Wang, Xin Lu, Tao Zhou, Bin School of Mechanical and Electrical Engineering Guilin University of Electronic Technology 1 Jinji Road Guilin 541004 China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory CEPREI 110 Dongguanzhuang Road Tianhe District Guangzhou 510000 China

In recent years, with the rapid development of the microelectronics industry and the wide application of high-density packaging of electronic products, the environmental requirements for electronic products become harsh increasingly. In addition to the thermal stress, the micro-assembly device will also withstand the effects of vibration and shock with different forms, which may aggravate the elastic and plastic deformation of solder. So that increasing the accumulation of fatigue damage and even make entire electronic product failure. This paper focus on the vibration reliability of PBGA, the model test is conducted in order to ascertain the natural frequency and damping ratio, amplification coefficient, and then sine sweep test at different excitation conditions can be carried out until a solder joint become failure. The finite element model is developed by the ANSYS software. By comparing the results, the stress and strain distribution of failure joint in the first-order frequency range are attained. Finally, a numerical simulation method to obtain the curve of stress and number of the cycle to fail is developed in this paper. © 2013 IFSA.

关键词： Modal analysis

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