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Impact of incident direction on neutron-induced single-bit and multiple-cell upsets in 14 nm FinFET and 65 nm planar SRAMs

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Chinese physics B 2022年第12期31卷 375-381页

作者： Shao-Hua Yang Zhan-Gang Zhang Zhi-Feng Lei Yun Huang Kai Xi Song-Lin Wang Tian-Jiao Liang Teng Tong Xiao-Hui Li Chao Peng Fu-Gen Wu Bin Li School of Physics and Optoeletronic Engineering Guangdong University of TechnologyGuangzhou 510006China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research InstituteGuangzhou 510370China Institute of Microelectronics of Chinese Academy of Sciences Beijing 100029China Institute of High Energy Physics Chinese Academy of SciencesBeijing 100049China Spallation Neutron Source Science Center Dongguan 523803China School of Microelectronics South China University of TechnologyGuangzhou 510640China

Based on the BL09 terminal of China Spallation Neutron Source(CSNS),single event upset(SEU)cross sections of14 nm fin field-effect transistor(FinFET)and 65 nm quad data rate(QDR)static random-access memories(SRAMs)are obtained under different incident directions of neutrons:front,back and *** is found that,for both technology nodes,the“worst direction”corresponds to the case that neutrons traverse package and metallization before reaching the sensitive *** SEU cross section under the worst direction is 1.7-4.7 times higher than those under other incident *** for multiple-cell upset(MCU)sensitivity,side incidence is the worst direction,with the highest MCU *** largest MCU for the 14 nm FinFET SRAM involves 8 ***-Carlo simulations are further performed to reveal the characteristics of neutron induced secondary ions and understand the inner mechanisms.

关键词： neutron fin field-effect transistor(FinFET) single event upset(SEU) Monte-Carlo simulation

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Evaluation of p-GaN HEMTs degradation under high temperatures forward and reverse gate bias stress 2

Evaluation of p-GaN HEMTs degradation under high temperature...

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2023 2nd International Symposium on Semiconductor and electronic technology

作者： Jiang, Kun Deng, Jing Ni, Yiqiang Liu, Jun Liu, Xin He, Zhiyuan He, Liang School of Electrical Engineering University of South China Hunan Province Hengyang421001 China Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangdong Province Guangzhou510610 China

In this study, the degradation behavior and physical mechanism of the p-GaN HEMT devices under high-temperature gate bias (HTGB) with +5 V and -5 V were investigated. The DC characteristics show that the device after forward HTGB stress exhibits an obvious negative threshold voltage (Vth) shift, while the device after reverse HTGB exhibits a negligible shift. The following explanations could be given for the deterioration mechanism: a portion of the two-dimensional hole gas (2DHG) accumulated in the p-GaN layer at the p-GaN/AlGaN interface under long-term forward bias may fill the trap in the AlGaN layer through the tunneling effect. In addition, the drain-source on-resistance of the device had increased after +5 V HTGB stress, and a distinct decrease of accumulated capacitance was observed in the Cg-Vg curve. It indicates a degradation of the gate quality of the device after applying a forward-biased HTGB stress. © 2023 Institute of physics Publishing. All rights reserved.

关键词： Aluminum gallium nitride

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A New Five-layer Differential Magnetic-Field Probe With High Sensitivity

A New Five-layer Differential Magnetic-Field Probe With High...

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IEEE International Wireless Symposium (IWS)

作者： Yuan Chi Lei Wang Guoguang Lu Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute GuangZhou China

ISBN: (数字)9798350389999

ISBN: (纸本)9798350390001

This work introduces a novel differential magnetic-field probe that incorporates parasitic elements. The probe features a pair of shorted differential loops as the parasitic components, which significantly boost detection sensitivity due to the expanded detection area. The construction of the proposed probe includes a U-shaped loop with dual outputs serving as the primary element, supplemented by a pair of shorted differential loops acting as parasitic elements, a set of shorted vias, a set of connected vias, and numerous shielded vias. First, the usual single-loop probe is applied to measure the electric and magnetic field components at the same time. Subsequently, a pair of shorted loops are integrated into the differential single-loop probe to function as parasitic elements, thereby increasing the reception of magnetic flux. To demonstrate the design rationality, the correspondingly simulated results are given in this work. Ultimately, the probe with integrated parasitic elements is crafted, printed, and assessed. The simulation results indicate that the developed probe exhibits high detection sensitivity.

关键词： Wireless communication Magnetic flux Wireless sensor networks Sensitivity Simulation Magnetic noise Feature extraction Magnetic fields Probes Magnetic shielding

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Logo Detection of Integrated Circuit Based on CycleGAN Method and Improved YOLO-v4-tiny Model

Logo Detection of Integrated Circuit Based on CycleGAN Metho...

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International Conference on (ICEPT) electronic Packaging technology

作者： Yue Zhao Zhizhe Wang Jun Luo Qiuzhen Zhang Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China

ISBN: (数字)9798350353808

ISBN: (纸本)9798350353815

Focusing on the application requirements for precise detection of Integrated Circuit (IC) logos, and aiming at the problems of difficulty in obtaining database samples, uneven sample sizes, and low detection accuracy, a logo detection of IC Based on cycle-GAN method and improved YOLO-v4-tiny model is proposed. This article uses the cycle-GAN method to amplify small sample images in the IC logo image dataset. Next, the Coordinate Attention (CA) attention mechanism is embedded in the YOLO-v4-tiny model to improve the accuracy of feature representation in lightweight networks, thereby improving detection accuracy. The experimental results show that the cycle-GAN data augmentation method can effectively expand the dataset, and it has been validated on commonly used networks that the enhanced dataset can effectively improve the accuracy of integrated circuit logo detection. In addition, the improved YOLO-v4-tiny model achieved a mAP index of 98.17% on the augmented dataset, which can meet the accuracy index of the integrated circuit logo detection system and reduce the computational resources required for deployment.

关键词： Accuracy Attention mechanisms Databases Computational modeling Focusing Object detection Data augmentation

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IC-LOGO: A Custom Dataset and Benchmark for Integrated Circuit Logo Detection Task

IC-LOGO: A Custom Dataset and Benchmark for Integrated Circu...

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IEEE International Conference on Artificial Intelligence and Computer applications (ICAICA)

作者： Yue Zhao Jun Luo Zhizhe Wang Qiuzhen Zhang Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China

ISBN: (数字)9798350377255

ISBN: (纸本)9798350377262

In order to enable computers to automatically detect the logo information of Integrated Circuit (IC) images and assist users in searching for the required IC manufacturer information based on the logo images, this article conducted research and analysis on the existing public datasets in the field of logo detection, and found that the existing public datasets cannot meet the specific research and application needs of this article. Therefore, the Integrated Circuit Logo (IC-LOGO) image dataset is presented in this article. The dataset contains 971 internal logo images from 17 manufacturers and 2091 external logo images from 30 manufacturers. Furthermore, the logo images were precisely positioned and annotated. Finally, a benchmark containing 8 different object detection networks was used to test the IC-LOGO dataset. The results show that all detectors trained on the dataset could detect the region and category of LOGO precisely and robustly.

关键词： Training Surveys Image recognition Computational modeling Object detection Benchmark testing Data models Software Robustness Integrated circuit modeling

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Determination of blind elements of InGaAs short-wave infrared focal plane detector with high effective pixel rate for low-orbit satellite communication based on dark signal voltage change rate and sliding window detection

Determination of blind elements of InGaAs short-wave infrare...

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2023 Advanced Fiber Laser Conference, AFL 2023

作者： Liu, Yuebo Wang, Meng Luo, Xi Wang, Hongyue Lai, Canxiong Yang, Shaohua Lu, Guoguang Ma, Teng Reliability Physics and Application Technology of Electronic Component Key Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou511370 China Guangzhou Wide Bandgap Semiconductor Innovation Center Guangzhou Institute of Technology Xidian University Guangzhou510555 China State Key Laboratory of High-Power Semiconductor Lasers Changchun University of Science and Technology Changchun130022 China

ISBN: (纸本)9781510677661

The effective pixel rate is a key performance parameter of infrared focal plane detectors and is also a key parameter for assessing the reliability degradation trend of the device. The application scenario of InGaAs short wavelength infrared focal plane detectors for interstellar alignment is different from that of conventional imaging detectors, where the signal values of each pixel of the focal plane are mainly used to determine the position of the laser bright spot, rather than the gray values used to generate the image. From the point of view of blind element evaluation, for the low-orbit satellite communications application scenario, the rate of change of the response values of the image elements in each local region of the InGaAs short-wave infrared focal plane detector for interplanetary alignment with optical flux has a greater impact on the performance of the device than the absolute response values of the image elements. In order to adapt to this evaluation requirement, this work designs a sliding window blind element determination method based on the rate of change of the dark signal voltage for the intrinsic characteristics of the detector, which utilizes the principle of equivalence of the effects of luminous flux and integration time on the detector signal voltage value, which is more adaptable to the practical application scenarios of interstellar-aligned shortwave infrared focal plane detectors, and the entire focal plane is divided into a number of localized regions, and the sliding detection window is used for blind element determination, which avoids the fully aligned shortwave infrared focal plane detector. Blind meta-judgment, which avoids the phenomenon of misjudgment that often occurs in global judgment. This blind judgment method is also of great importance for the reliability evaluation of InGaAs shortwave infrared focal plane detectors with high effective pixel rate for interstellar alignment. © COPYRIGHT SPIE. Downloading of the abstract i

关键词： Orbits

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Structure evolution andτ_(f)influence mechanism of Bi_(1-x)Ho_(x)VO_(4)microwave dielectric ceramics for LTCC applications

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Journal of Materials science & technology 2024年第30期197卷 1-8页

作者： Huaicheng Xiang Yuheng Zhang Junqi Chen Yang Zhou Ying Tang Jinwu Chen Liang Fang Key Laboratory of Low-Dimensional Structural Physics and Application Education Department of Guangxi Zhuang Autonomous RegionCollege of Physics and Electronic Information EngineeringGuilin University of TechnologyGuilin541004China Guangxi Universities Key Laboratory of Non-Ferrous Metal Oxide Electronic Functional Materials and Devices Guangxi Key Laboratory of Optical and Electronic Materials and DevicesCollege of Materials Science and EngineeringGuilin University of TechnologyGuilin541004China School of Mechanical Engineering Guilin University of Aerospace TechnologyGuilin541004China

Bi_(1-x)Ho_(x)VO_(4)(0.1≤x≤0.9)ceramics were prepared via a solid-state reaction method,and all the ceram-ics could be well densified in the 920–980℃*** ceramics with 0.1≤x<0.4 were composed of both monoclinic scheelite(M)and tetragonal zircon(T)phases,and a single M phase could be obtained in the range of x≥*** measuredε_(r) decreased from 58.9(x=0.1)to 14.7(x=0.9),so do the calcu-lated values(ε_(r)(C−M)=34.3–12.1),and the main reason forε_(r)>ε_(r)(C−M)was the rattling of Ho^(3+)in the *** points with zeroτf appeared in Bi1–x Hox VO4(0≤x≤1)ceramics,and the best mi-crowave dielectric properties withε_(r)=16.6,Q×f=18,400 GHz(f=10.69 GHz),andτf=+3.29 ppm/℃were obtained in the Bi_(0.2)Ho_(0.8)VO_(4)*** change in temperature coefficient of ionic polarizability(τ_(αm))caused by the rattling effect of cations is the physical essence that affectsτ***,the rattling effect can be used as an effective mechanism to regulateτf in low-ε_(r) ***,there was no chemical reaction between Bi_(1-x)Ho_(x)VO_(4) and Ag electrode,which indicates potential applications in low-temperature co-fired ceramic(LTCC)technology.

关键词： Bi_(1–x)Ho_(x)VO_(4) Near-zeroτ_(f) Bond valence Rattling effect LTCC

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Degradation mechanism of 1310nm vertical cavity surface emission laser

Degradation mechanism of 1310nm vertical cavity surface emis...

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2023 Applied Optics and Photonics China: AI in Optics and Photonics, AOPC 2023

作者： Liao, Wenyuan Zhang, Jide Liu, Yuebo Li, Shuwang Yang, Shaohua Lai, Canxiong Lu, Guoguang Science and Technology on Reliability Physics and Application of Electronic Component Laboratory The Fifth Electronic Research Institute of the Ministry of Industry and Information Technology Guangzhou511370 China State Key Laboratory of High Power Semiconductor Laser Changchun University of Science and Technology Jilin Province Changchun130013 China

ISBN: (纸本)9781510672383

1310nm long-wavelength vertical-cavity surface-emitting lasers (VCSELs) have a wide application prospect in optical data transmission over long distances, in particular for hybrid integration with silicon photonics. With the wide application of 1310nm VCSEL, the reliability requirement is becoming more and more high. In this paper, the degradation mechanism of 1310nm VCSEL is studied by accelerated stress aging experiment. The device accelerates aging for 4000 hours at 8 mA, the maximum output power decreases by 0.04 mW, and the power saturation current and V-I curve remain basically unchanged. Leakage current of the device increases and reverse bias breakdown voltage decreases. Current noise power spectral density of the device is an order of magnitude higher than before aging. In addition, the device with degraded performance is characterized by optical emission microscopy. When the device is forward biased, dark spot defect is found on the edge of the light-emitting hole of the device after burnin. The internal topography of the device is characterized by FIB-SEM, and the oxide layer warpage is found. This is due to the increase of heat inside the device and the increase of stress in oxide layer, resulting in degradation of device's performance. © COPYRIGHT SPIE. Downloading of the abstract is permitted for personal use only.

关键词： Surface emitting lasers

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Vias electromigration lifetime reliability evaluation by using focus ion beam method 24

Vias electromigration lifetime reliability evaluation by usi...

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24th electronics Packaging technology Conference, EPTC 2022

作者： Wen, Zhang Xiao Ling, Lin Xiao Dai, Zongbei Rui, Gao Science and Technology on Reliability Physics and Application of Electronic Component Laboratory 78 west of ZhuCun Avenue ZengCheng district Guangzhou511370 China

ISBN: (纸本)9798350398854

The FIB (Focus Ion Beam) Construction analysis is widely used in FA field, such as evaluating process limitations, debugging, and root cause demonstration. In this paper, we describe the reliability check method of the via by using FIB. Based on the electromigration (EM) test of the vias, the reliability check method of the vias is studied through the influence of void area ratio in the via on the EM lifetime of the via. The results showed that under different operating conditions, the same void area ratio has almost the same influence on the EM lifetime, and with the increase of void area ratio in the via, the EM lifetime of the via decreases, when the lifetime decreases by 20%, the corresponding void area ratio is about 12%, which can be used as the check criteria of the via. © 2022 IEEE.

关键词： Electromigration

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A Single-Loop Narrow-Band Force Rebalance Control Method with Temperature Self-Compensation for a MEMS Gyroscope 38

A Single-Loop Narrow-Band Force Rebalance Control Method wit...

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38th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2025

作者： He, Chunhua Xu, Yingyu Wu, Heng Huang, Qinwen Zhao, Qiancheng Yan, Guizhen Guangdong University of Technology School of Computer China Ceprei Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory China Guangdong University of Technology School of Automation China Peking University School of Integrated Circuits Beijing China National Key Lab of Micro/Nano Fabrication Technology Beijing China

ISBN: (纸本)9798331508890

This paper presents a novel single-loop narrow-band force rebalance control method with temperature self-compensation for a MEMS gyroscope. The narrow-bandwidth force rebalance control for the sense mode is achieved using a simple bandpass filter (BPF) and without modulation or demodulation. The center frequency of the BPF is adjusted automatically to match the resonant frequency of the sense mode. Meanwhile, its gain is tuned based on the real-time quality factor of the sense mode. Experimental results demonstrate that the bias drift of the gyroscope with self-compensation is reduced from 1320 deg/h to 16 deg/h, while the scale factor drift is reduced from 0.616 mV/deg/s to 0.075 mV/deg/s. © 2025 IEEE.

关键词： Gyroscopes

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